From cachang at stanford.edu  Wed Dec  1 13:47:34 2010
From: cachang at stanford.edu (Chia-Ming Chang)
Date: Wed, 1 Dec 2010 13:47:34 -0800 (PST)
Subject: [Reminder] Special Seminar - Dr. Seung Rim (SunPower Corp.),
 Thursday Dec. 2,	4:15 PM, Nano 232
In-Reply-To: <1368852706.86349.1290558024724.JavaMail.root@zm06.stanford.edu>
Message-ID: <1029441233.251703.1291240054435.JavaMail.root@zm06.stanford.edu>






Special Seminar Presented by the Stanford Optical Society 

Progress in back contact crystalline silicon solar cell 

Dr. Seung Rim 

R&D Staff Engineer at SunPower Corporation 


Thursday, December 2, 4:15 PM, Nano Center 232 

Refreshments at 4PM 



SunPower Corporation designs, manufactures and delivers high-performance solar electric systems worldwide for residential, commercial and utility-scale power plant customers. SunPower high-efficiency solar cells and solar panels generate up to 50 percent more power than conventional solar technologies and have a uniquely attractive, all-black appearance. I'll briefly introduce SunPower's high efficiency products and market today . The advantages of SunPower?s back contact solar panels will be discussed including high performance ratio (kWh/kWp) and reliability. In the second part of this talk, I'll present efficiency improvement of SunPower solar cells. The Generation 1 showed efficiency 20.5% and Generation 2 did higher than 22%. The Generation 3 product has been designed to deliver both increased performance and lower manufacturing cost. The champion cell achieved 24.2% of conversion efficiency by optimizing of the diffusion recombination on production equipment using a production wafer, 155.1cm2 n-type CZ. 

About the speaker Seung Rim is a R&D staff engineer at SunPower Corporation. Prior to joining SunPower, he earned his B.S. in Electrical Engineering in Seoul National University in Republic of Korea and his Ph.D. in Electrical Engineering with Prof. Peter Peumans at Stanford University. His work currently focuses on high efficiency low cost back contact solar cell development.
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From dasgupta at stanford.edu  Wed Dec  1 17:04:15 2010
From: dasgupta at stanford.edu (Neil Dasgupta)
Date: Wed, 1 Dec 2010 17:04:15 -0800 (PST)
Subject: contact exposure of 3612 on quartz
Message-ID: <508263592.257639.1291251855703.JavaMail.root@zm03.stanford.edu>

Hi Labmembers,

I am wondering if anybody has experience with using contact mask exposure for standard 1um 3612 resist coated on quartz substrates? The resist came out very clear on the quartz, so I am assuming the exposure time may be significantly different than the standard 1.2 s that I use with EVAligner.  Any experience in this area would be appreciated.

Thank you,
Neil Dasgupta


From daibing at gmail.com  Wed Dec  1 17:23:25 2010
From: daibing at gmail.com (Bing Dai)
Date: Wed, 1 Dec 2010 17:23:25 -0800
Subject: Fwd: University PhD Dissertation Defense of Bing Dai
In-Reply-To: <p06230909c8f89d679287@171.64.84.39>
References: <p06230909c8f89d679287@171.64.84.39>
Message-ID: <AANLkTikFEDqEDLwjUromS5vW5qvyfvDnuL0tubtpr3OO@mail.gmail.com>

---------- Forwarded message ----------
From: Claire Nicholas <claireni at stanford.edu>
Date: Thu, Nov 4, 2010 at 10:29 AM
Subject: Re: University PhD Dissertation Defense of Bing Dai
To:
Cc: apgradstudents at lists.stanford.edu


 Department of Applied Physics
University PhD Dissertation Defense


Keyhole Diffraction Microscopy for Semiconductor Circuit Inspection

Bing Dai
Applied Physics PhD Candidate
Research Advisor: Professor R. Fabian Pease

December 2, 2010 @1:00 P.M.
Location: Allen Building (Formerly CIS-X), Room 101

ABSTRACT
Non-destructive inspection of integrated circuits requires a microscope that
features high resolution (<20 nm) and high penetration (>0.07mm of silicon
substrate), thus suggesting the use of x-ray microscopy. The advent of
intense coherent sources of hard (<1nm wavelength) x-rays has led to the
study of x-ray diffraction microscopy in which the image is reconstructed
from the far-field diffraction pattern. Because this pattern records only
intensity information, additional information, e.g. the phase distribution,
is needed for image reconstruction. Here this information is provided by
illuminating the sample with a collimated beam of well-defined shape and
thus is a form of 'keyhole diffraction microscopy'.  The research featured
computer simulations, scaled optical experiments, scaled soft (1.4nm) x-ray
experiments and one hard x-ray experiment. The geometry and periodicity of
the sample itself were found to affect the reconstruction. Illumination with
asymmetric shapes (such as a triangle) sharply bounded gave the best
reconstruction.  The results of scaled optical experiment conducted under
blind conditions (no* a priori* knowledge of the sample) suggest that a
resolution of 10nm should be readily achievable at an x-ray wavelength of
0.18 nm.
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From mtang at stanford.edu  Wed Dec  1 20:18:48 2010
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 01 Dec 2010 20:18:48 -0800
Subject: EE412 Final Presentations, 12/8, 4 pm, AllenX Auditorium
Message-ID: <4CF71E28.1080400@stanford.edu>

Dear Labmembers --


We'd like to invite you to come hear presentations by members of the 
EE412 Advanced Nanofab Processing class.  This is a team-project based 
course with the aim to develop, characterize, and document processes of 
value to the SNF lab community.  Processes this term include 
characterization of a broad range of films on the Savannah ALD, deep 
trench coverage by the EV Spray Coater, and etch characterization of 
STSetch2.  Progress reports have been posted on the wiki at  
https://snf.stanford.edu/SNF/processes/ee412

But for the final, stunning results, come to the presentations next 
Wednesday, Dec. 8, from 4-6 pm in the Allen X Auditorium.  Pizza beforehand.


Hope to see you there --

The EE412 Class of Fall '10

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From schwede at stanford.edu  Thu Dec  2 15:36:02 2010
From: schwede at stanford.edu (Jared Schwede)
Date: Thu, 2 Dec 2010 15:36:02 -0800 (PST)
Subject: Reminder: Nanosociety Meeting Friday TOMORROW @ 12:00 pm,
 McCullough 115:  Pore Filling & Light Trapping in Solid State
 Dye-sensitized Solar Cells
In-Reply-To: <2115705701.23884.1291158032991.JavaMail.root@zm02.stanford.edu>
Message-ID: <396051293.93697.1291332962909.JavaMail.root@zm02.stanford.edu>

Tomorrow at 12 pm, I-Kang Ding , a member of the McGehee group, will be presenting research on solid state dye-sensitized solar cells. 



As always, the meeting will be in McCullough 115, and FREE PIZZA will be served at 11:55 am. 

Want to learn more about the nanosociety? Join the mailing list: https://mailman.stanford.edu/mailman/listinfo/nanosociety 


Pore Filling & Light Trapping in Solid State Dye-sensitized Solar Cells 

I-Kang Ding 
Department of Materials Science and Engineering 
McGehee Group 



Dye-sensitized solar cells (DSCs) are among the promising PV technologies that could potentially replace the expensive silicon. Liquid electrolyte-based DSCs have the highest efficiency but they suffer from potential stability and encapsulation problems. People are actively pursuing the solid state dye-sensitized solar cells (ss-DSCs), which uses a solid-state hole-transport material to replace the liquid electrolyte. SS-DSCs can potentially achieve higher power conversion efficiencies than the liquid-electrolyte because the open-circuit voltage can be adjusted by the choice of different hole-transport materials. However, current ss-DSCs are limited by both pore filling and electron-hole recombination such that the optimal thickness is around 2 micron , far thinner than the thickness needed to achieve good optical absorption. 



Here we describe two approaches to improve the efficiency of the solar cell. The first one is to increase pore filling of hole transport material. Pore filling has important consequences in the efficiency of the device because increasing pore filling could lower the recombination loss by allowing holes to stay away from the electrons in TiO2, which in turn may increase the optimum thickness of the device. The second approach is to increase the absorption of the device through the use of plasmonic back reflectors, which consist of two-dimensional (2D) array of silver nanodomes. They are incorporated into the ss-DSCs by nanoimprint lithography, and they enhance absorption through excitation of plasmonic modes and increased light scattering. 
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From jwpchen at stanford.edu  Thu Dec  2 16:06:48 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Thu, 02 Dec 2010 16:06:48 -0800
Subject: seminar - Advances of MEMS Resonators - 12/3 11-12, Allen 101, Li-Wen
 Hung, EECS, UC Berkeley
Message-ID: <4CF83498.5040308@stanford.edu>

Friday, December 3, 2010
Allen 101
11:00 ? 12:00

Advances of MEMS Resonators
Li-Wen Hung, EECS, UC Berkeley

Abstract
MEMS resonators are a possible single-chip solution for frequency 
control in miniaturized transceivers. In particular, narrow-band filters 
capable of removing the entire out-of-channel interferences relax the 
dynamic range and power requirements for the subsequent circuits.

However, so far no MEMS resonator has achieved simultaneously high-Q and 
low-impedance, as required by narrow-band filters. Specifically, 
capacitive resonators show high Q but high impedance; piezoelectric 
resonators attain low impedance but insufficient Q.

This talk will focus on the theory and demonstration of two new 
techniques for either reducing the impedance or enhancing the Q of MEMS 
resonators:
(1) Silicide-induced gaps, as the single known method for releasing 
microstructures without any etching or bonding, form sub-50nm 
transduction gaps via only seconds of annealing, compared to hours of 
etching limited by mass transportation rate.
(2) Capacitive-piezo resonators post the highest Q ever measured for 
sputtered AlN resonators by eliminating electrode losses and, for the 
first time, confirm AlN as a high-Q material.
The talk will conclude with future research trends and new applications 
enabled by advances of MEMS resonators.


Biography
Li-Wen Hung received her B.S. degree from National Taiwan University, 
Taipei, and M.S. degree from University of Michigan, Ann Arbor, both in 
Electrical Engineering. She will shortly receive Ph.D. from UC Berkeley. 
Her current research interests include micromechanical resonators and 
circuits. From 2007 to 2010, she has proposed and demonstrated four new 
methods for enhancing resonator performance and has received several 
awards, including four Best Paper/Poster Awards from Industry Advisor 
Board (IAB) of Berkeley Sensor and Actuator Center (BSAC). Her 
innovative work on silicide-induced gaps won the Gold Prize of the 
international TSMC Outstanding Student Research Award in 2010. She has 
three patents pending.


From mtang at stanford.edu  Thu Dec  2 17:20:18 2010
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 02 Dec 2010 17:20:18 -0800
Subject: Annual Allen Building Holiday Party:  Thursday, Dec. 9 @ 2 pm
Message-ID: <4CF845D2.9080508@stanford.edu>

Hello everyone --

Please come to the annual Allen Building holiday party.  This will be 
next Thursday, at 2 pm, just outside the yellow window area of the lab.  
Enjoy snacks, traditional games (the famous "wafer toss" and guess who's 
in that bunnysuit...), create your own silicon wafer ornament, and just 
spend some time reconnecting before heading off for the holidays.  Stop 
on by for an afternoon break (generously sponsored by the CIS Affiliates.)


Your party committee




From edmyers at stanford.edu  Thu Dec  2 22:03:19 2010
From: edmyers at stanford.edu (Ed Myers)
Date: Thu, 2 Dec 2010 22:03:19 -0800 (PST)
Subject: Odor in Litho
Message-ID: <1024458978.450791.1291356199018.JavaMail.root@zm07.stanford.edu>

All,

I received a call regarding an unusual odor in Litho, somewhere around the SVG coater.  By the time I arrived the odor was pretty weak.  I searched the area for any spills but did not find any.  After an hour or so, the odor was below my detection limit.  

The Litho area is open and available for use.  If the odor reappears, please give the safety phone a call.

Regards,
SNF Staff


From mtang at stanford.edu  Fri Dec  3 14:34:20 2010
From: mtang at stanford.edu (Mary Tang)
Date: Fri, 03 Dec 2010 14:34:20 -0800
Subject: EE412 Final Process Presentations, Wed. 12/8, 4 pm, AllenX Auditorium
Message-ID: <4CF9706C.1060509@stanford.edu>

Dear Labmembers --

Please come hear presentations by members of the EE412 Advanced Nanofab 
Processing class.  This is a team-project based course with the aim to 
develop, characterize, and document processes of value to the SNF lab community.  
Here is the schedule:


4:00-4:15            Pizza

4:15-4:20            Introduction by the instructors (Profs. Howe and 
Solgaard)


4:20-4:35            STSEtch2 Profile Characterization 
<https://snf.stanford.edu/SNF/processes/ee412/STSetch2A.pdf/view>
                           Undercut and Notching Elimination for Silicon 
Etching in STSetch2
                           Lele Wang, Dong Liang and Yu-Shuen Wang

 
4:40-4:55            STSEtch2: High Aspect Ratio Silicon Etching 
<https://snf.stanford.edu/SNF/processes/ee412/STS2%20-%20high%20AR%20etching.pdf/view>
                           High Aspect Ratio Si Etching in STS2
                           Jaewoong Jeong

 
5:00-5:15            Deep Trench Spray Coating 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_Spraycoater_Vijayraghavan_v3.pdf/view>
                           Process for spray coating and ASML patterning 
in deep trenches
                           Karthik Vijayraghaven

 
5:20-5:35            ALD Nitride 
<https://snf.stanford.edu/SNF/processes/ee412/Project%20Proposal%2005.pdf/view>
                           Developing ALD Nitride on the Savannah
                           Shingo Yoneoka, Yi-Hsuan Lin, Scott Lee, 
Chu-En Chang

 
5:40-5:55            ALD Nanolaminates 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_NanolaminateGroup.pdf/view>
                           ALD Oxide Nanolaminates
                           Yi Wu, Shimeng Yu, Shuang Li

 
6:00-6:20            ALD Oxides and Germanium Passivation 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_ALD_Presentation.pdf/view>
                           High-k Film on Ge Characterization and Atomic 
Layer Removal (ALR) of Ge
                           Ze Yuan, Jason Lin, Woo Shik Jung, Ju Hyung Nam

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From yoonjin at stanford.edu  Sun Dec  5 18:58:43 2010
From: yoonjin at stanford.edu (Yoonjin Won)
Date: Sun, 5 Dec 2010 18:58:43 -0800
Subject: PhD Defense - Yoonjin Won, Monday, Dec 6, 2010, 2:30 pm
Message-ID: <0180A793-8A1E-49CF-98EE-10F4A77AF819@stanford.edu>

Stanford University Ph.D. Dissertation Defense - Yoonjin Won
Department of Mechanical Engineering

Title: "Mechanical Characterization of Aligned Carbon Nanotube Films  
using Microfabricated Resonators"
Research Adviser: Prof. Thomas Kenny, Prof. Kenneth Goodson

Date: Monday, Dec 6, 2010
Time: 2:30 pm
Location: 530-127
http://campus-map.stanford.edu/index.cfm?ID=02-530

Abstract:
Owing to their unique mechanical and thermal properties, vertically  
aligned carbon nanotube (VACNT) films are promising for use as  
advanced thermal interface materials (TIMs). While there has been much  
research on the thermal properties of aligned carbon nanotube films,  
the mechanical modulus along the in-plane direction has received very  
little attention.

This dissertation describes the design, fabrication, and testing of  
Carbon Nanotubes (CNTs) using resonators to characterize mechanical  
properties of them. Carbon nanotubes were prepared using different  
recipes, resulting in varied thicknesses of Single Wall Carbon  
Nanotubes (SWNTs) and Multi Wall Carbon Nanotubes (MWNTs). The  
resonant frequency shifts due to the presence of the CNT films were  
measured using a Laser Doppler Vibrometer (LDV) system. The extracted  
moduli of 3.23-26.64 ?m-thick SWNT films varied from 10.81 to 371.67  
MPa, and those of 0.52-250.0 ?m-thick MWNT films ranged from 0.46 to  
277.74 MPa. To show the connection between the physics between the  
Young's the modulus and thickness, an analysis for the height  
dependence of modulus is provided. After presenting an image analysis,  
a physical model based on tube properties and film morphology is  
introduced to predict mechanical properties. The results indicate that  
CNT films offer a mechanical compliance that is suitable for TIM  
applications.


Yoonjin Won
Ph.D. Candidate
Mechanical Engineering
Stanford University
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From renshen at stanford.edu  Tue Dec  7 00:12:39 2010
From: renshen at stanford.edu (Shen Ren)
Date: Tue, 7 Dec 2010 00:12:39 -0800
Subject: PhD Oral Defense:9:45am, Dec 13th
Message-ID: <AANLkTi=1=a5hyOmi=S3b_PAmcry6VhMAUu0nFKUf_=wj@mail.gmail.com>

Stanford University PhD Oral Defense ? Department of Electrical Engineering



Ph.D. Candidate: Shen Ren

Advisor: Prof. David. A. B. Miller

Date: Monday, Dec 13th, 2010

Time: 10am (Refreshments start at 9:45am)

Location: CISX Auditorium (101X)

Title: Ge/SiGe Quantum Well Waveguide Modulator for Optical Interconnect
Systems



*Abstract*

Thanks to the development of silicon VLSI technology over the past several
decades, we can now integrate far more transistors onto a single chip than
ever before. However, this also imposes more stringent requirements, in
terms of bandwidth, density, and power consumption, on the interconnect
systems that link transistors. The interconnect system is currently one of
the major hurdles for the further advancement of the electronic technology.
Optical interconnect is considered a promising solution to overcome the
interconnect bottleneck.



In this presentation, I will first briefly introduce the optical
interconnect system. Then a special type of device in the optical
interconnect system, the optical waveguide modulator that is based on
Ge/SiGe quantum well (QW) structures, will be presented. Such QW structures
can be grown monolithically on silicon substrates in a fully CMOS compatible
fashion. For the first time, we demonstrated the selective epitaxial growth
of these structures on patterned substrates. The selective epitaxy exhibits
minimal pattern sensitivity under optimized growth conditions. Compared to
its counterparts through bulk epitaxy, the p-i-n diodes from selective
epitaxy demonstrate very low reverse leakage current and high reverse
breakdown voltage. Strong quantum-confined Stark effect (QCSE) is, for the
first time, demonstrated in this material system in the telecommunication
C-band at room temperature. Then I will present our approach of integrating
the Ge/SiGe QW active optical modulators into the silicon-on-insulator (SOI)
waveguide platform through selective epitaxial growth. We proposed,
analyzed, and experimentally demonstrated a novel approach to realize the
butt coupling between SOI waveguide and Ge QW waveguide modulator using a
thin dielectric spacer. 3.2dB modulation contrast ratio is achieved with
merely 1V dynamic swing. We also show high speed modulation up to 3.5GHz,
which is currently limited by our testing capability.


-- 
Best wishes,

Shen Ren

Department of Electrical Engineering
Stanford University


The optimist thinks this is the best of all possible worlds. The pessimist
fears it is true.
- Robert Oppenheimer
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From kwankyup at stanford.edu  Tue Dec  7 03:01:09 2010
From: kwankyup at stanford.edu (Kwan Kyu Park)
Date: Tue, 7 Dec 2010 03:01:09 -0800
Subject: Ph.D. Defense - Kwan-Kyu Park, Wednesday, Dec. 8th, 2010, 2:00 pm
In-Reply-To: <0180A793-8A1E-49CF-98EE-10F4A77AF819@stanford.edu>
References: <0180A793-8A1E-49CF-98EE-10F4A77AF819@stanford.edu>
Message-ID: <B452F927-1013-4F1A-BC1A-3E58DA3F6AE6@stanford.edu>

Stanford University Ph.D. Dissertation Defense - Kwan-Kyu Park
Department of Mechanical Engineering

Title: "Capacitive Micromachined Ultrasonic Transducer (CMUT) for Chemical Detection in Air"
Research Adviser: Prof. B. T. Khuri-Yakub

Date: Wednesday, Dec. 8th, 2010 
Time: 2:00 pm 
Location: Packard 202

Abstract:

Miniaturized chemical and biological sensor systems have a wide range of emerging applications for consumer, military, and medical use. Portable sensors with high sensitivity and reliability can replace the bulky equipment, expanding the potential applications beyond the conventional use of in-laboratory detection.

This dissertation describes the resonant chemical sensor platform based on capacitive micromachined ultrasonic transducers (CMUTs). A CMUT is composed of 100s of flexural-mode resonators connected in parallel. The device is chemically activated by inkjet coating of functionalization polymer layers with a thickness of ~50 nm. Five-channel CMUT chemical sensor presents good sensitivity to commonly used solvents. Analyte identification is also successfully performed based on the multi-channel chemical sensor. 

This dissertation also presents ppt-level detection of dimethyl methylphosphonate (DMMP), a common simulant used in detector calibrations for sarin gas (GB), using an optimized CMUT design with a mass sensitivity of 4.8 ag/Hz. A low-noise oscillator using the CMUT exhibits an Allan deviation of 0.2 Hz. With a 50-nm thick proprietary polymer layer (Sandia National Laboratory), the sensor shows an excellent volume sensitivity of 21 pptv/Hz. Based on the system noise floor, a calculated mass resolution is 33 zg/um2 (3?) and a limit of detection level of DMMP is 12.6 pptv (3?). In addition, the sensor shows good selectivity to DMMP.

__________________________
Kwan-Kyu Park
Ph.D Candidate
E. L. Ginzton Laboratory, 
Center for Nanoscale Science and Engineering
345 Via Peublo
Stanford University
Stanford, CA 94305
Tel: 650-353-1376
email: kwankyup at stanford.edu




From cachang at stanford.edu  Tue Dec  7 14:39:24 2010
From: cachang at stanford.edu (Chia-Ming Chang)
Date: Tue, 7 Dec 2010 14:39:24 -0800 (PST)
Subject: Special Seminar - Prof. Ivan Kaminow (UC Berkeley), Tuesday Dec.
 14,	4:15 PM, Nano 232
In-Reply-To: <1368852706.86349.1290558024724.JavaMail.root@zm06.stanford.edu>
Message-ID: <356498290.428589.1291761564286.JavaMail.root@zm06.stanford.edu>



Special Seminar Presented by the Stanford Optical Society 

Lightwave Modulators: Early Research at Bell Labs 

Prof. Ivan P. Kaminow 

EECS, UC Berkeley 



Tuesday, December 14, 4:15 PM, Nano Center 232 

Refreshments at 4PM 



Ted Maiman?s announcement of the ruby laser in May 1960 created great excitement worldwide, and particularly at Bell Labs. I was in the Microwave Systems Research Lab, soon to become the Lightwave Systems Research Lab, in Holmdel, NJ. Many of my colleagues decided to pursue laser research. Based on my experience with microwave systems, I decided to explore broadband light modulators that would be key for any telecom system. In my talk, I plan to touch on some of the highlights of a 15-year period of research on electrooptic modulators in the Bell Labs ambience. I include a 9 GHz travelling wave modulator, studies of electrooptic materials and photonic integrated circuits. 



About the speaker 

Ivan Kaminow retired from Bell Labs in 1996 after a 42-year career (1954-1996), mostly in lightwave research. At Bell Labs, he did seminal studies on electrooptic modulators and materials, Raman scattering in ferroelectrics, integrated optics (including titanium-diffused lithium niobate modulators), semiconductor lasers (including the DBR laser, ridge waveguide InGaAsP laser and multi-frequency laser), birefringent optical fibers, and WDM lightwave networks. Later, as Head of the Photonic Networks and Components Research Department, he led research on WDM components (including the erbium-doped fiber amplifier, waveguide grating router and the fiber Fabry-Perot resonator), and on WDM local and wide area networks. Earlier (1952-1954), he did research on microwave antenna arrays at Hughes Aircraft Company. 

After retiring from Bell Labs, he served as IEEE Congressional Fellow on the staffs of the House Science Committee and the Congressional Research Service (Science Policy Research Division) in the Library of Congress. From 1997 to 1999, he returned to Lucent Bell Labs as a part-time Consultant. He also established Kaminow Lightwave Technology to provide consulting services to various technology companies, and to patent and litigation law firms. In 1999 he served as Senior Science Advisor to the Optical Society of America in Washington. He also served on a number of professional committees. He received degrees from Union College (BSEE), UCLA (MSE) and Harvard (AM, Ph.D.). He was a Hughes Fellow at UCLA and a Bell Labs Fellow at Harvard. 

He has been Visiting Professor at Princeton, Berkeley, Columbia, the University of Tokyo, and Kwangju University (Korea). Currently, he is Adjunct Professor in EECS at University of California, Berkeley, where he has been teaching since 2004 (ee290F. Advanced Topics in Photonics [spring 2004]; ee233. Lightwave Systems [spring 2006]; seminar on Plasmonics [spring, fall 2007] and seminar on Photonics and Plasmonics [spring, fall 2008; spring, fall 2009; spring, fall 2010]). 

He has published over 240 papers, received 47 patents, and has written or co-edited 5 books, the most recent being "Optical Fiber Telecommunications V A&B," co-edited with Tingye Li and Alan Willner, published in March 2008. Kaminow is a Life Fellow of IEEE, and Fellow of APS and OSA. He is the recipient of the Bell Labs Distinguished Member of Technical Staff Award, IEEE Quantum Electronics Award, OSA Charles Townes Award, IEEE/LEOS/OSA John Tyndall Award, IEEE Third Millennium Medal, Union College Alumni Gold Medal and IEEE Photonics Award. He is a member of the National Academy of Engineering, a Diplomate of the American Board of Laser Surgery, and a Fellow of the New York Academy of Medicine. 

	
		

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From mtang at stanford.edu  Wed Dec  8 14:11:36 2010
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 08 Dec 2010 14:11:36 -0800
Subject: EE412 Final Presentations - Today at 4, in the AllenX Auditorium
Message-ID: <4D000298.8020608@stanford.edu>

Dear Labmembers --

Just a reminder of the presentations by members of the EE412 Advanced Nanofab 
Processing class.  This is a team-project based course with the aim to 
develop, characterize, and document processes of value to the SNF lab community.  
Here is the schedule:


4:00-4:15            Pizza

4:15-4:20            Introduction by the instructors (Profs. Howe and 
Solgaard)


4:20-4:35            STSEtch2 Profile Characterization 
<https://snf.stanford.edu/SNF/processes/ee412/STSetch2A.pdf/view>
                           Undercut and Notching Elimination for Silicon 
Etching in STSetch2
                           Lele Wang, Dong Liang and Yu-Shuen Wang

 
4:40-4:55            STSEtch2: High Aspect Ratio Silicon Etching 
<https://snf.stanford.edu/SNF/processes/ee412/STS2%20-%20high%20AR%20etching.pdf/view>
                           High Aspect Ratio Si Etching in STS2
                           Jaewoong Jeong

 
5:00-5:15            Deep Trench Spray Coating 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_Spraycoater_Vijayraghavan_v3.pdf/view>
                           Process for spray coating and ASML patterning 
in deep trenches
                           Karthik Vijayraghaven

 
5:20-5:35            ALD Nitride 
<https://snf.stanford.edu/SNF/processes/ee412/Project%20Proposal%2005.pdf/view>
                           Developing ALD Nitride on the Savannah
                           Shingo Yoneoka, Yi-Hsuan Lin, Scott Lee, 
Chu-En Chang

 
5:40-5:55            ALD Nanolaminates 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_NanolaminateGroup.pdf/view>
                           ALD Oxide Nanolaminates
                           Yi Wu, Shimeng Yu, Shuang Li

 
6:00-6:20            ALD Oxides and Germanium Passivation 
<https://snf.stanford.edu/SNF/processes/ee412/EE412_ALD_Presentation.pdf/view>
                           High-k Film on Ge Characterization and Atomic 
Layer Removal (ALR) of Ge
                           Ze Yuan, Jason Lin, Woo Shik Jung, Ju Hyung Nam

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From mtang at stanford.edu  Thu Dec  9 13:11:38 2010
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 09 Dec 2010 13:11:38 -0800
Subject: Reminder:  Allen Building Holiday Party is Today!!!
Message-ID: <4D01460A.3030009@stanford.edu>

The annual Allen/X Building holiday party is in just one hour! 

Please come to the annual Allen Building holiday party.  This will be 
next Thursday, at 2 pm, just outside the yellow window area of the lab.  
Enjoy snacks, traditional games ("wafer toss"), create your own silicon wafer ornament, and just 
spend some time reconnecting before heading off for the holidays.  Stop 
on by for an afternoon break (generously sponsored by the CIS Affiliates.)


Your party committee



-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From caiw at stanford.edu  Fri Dec 10 14:44:37 2010
From: caiw at stanford.edu (Wenshan Cai)
Date: Fri, 10 Dec 2010 14:44:37 -0800
Subject: Spin-on glass?
Message-ID: <4D02AD55.4080107@stanford.edu>

Anyone has Honeywell 512B (or similar) spin-on glass? Only a few 
milliliters is needed.

Thanks,
Wenshan Cai, MSE, Stanford


From scho at snowboard.Stanford.EDU  Sat Dec 11 14:24:28 2010
From: scho at snowboard.Stanford.EDU (Seongjae Cho)
Date: Sat, 11 Dec 2010 14:24:28 -0800 (PST)
Subject: Asking for some information 
Message-ID: <1379.172.24.99.128.1292106268.squirrel@snow.stanford.edu>

Hello, labmembers,

This is Seongjae at Prof. Harris group.
If anyone has answers for questions below, please let me know.
Answers for multiple questions are much better of course
but even if you have an answer for one question, that will be fine too.

The intend is to use Cr as the hard mask to etch multiple layers
and remove it by CR-14 minimizing the exposure of the lower layers
to CR-14 since the layers in my concern turned out to be also etched
by CR-14 significantly by SEM inspection.

1. Cr etch rate in drytek 4 at a usual oxide etch recipe.

2. Cr etch rate in pquest at a usual GaAs etch recipe.

3. Cr etch rate by CR-14 (wet etchant for Cr) as accurately as possible.

Thank you for your help in advance.

- Sincerely, Seongjae.



From renshen at stanford.edu  Sun Dec 12 10:23:22 2010
From: renshen at stanford.edu (Shen Ren)
Date: Sun, 12 Dec 2010 10:23:22 -0800
Subject: PhD Defense: Shen Ren, Monday, Dec 13, 2010
Message-ID: <AANLkTimFghfojY4AX+HEe9SveeM8vDWLHZmCqo=yNDms@mail.gmail.com>

Stanford University PhD Oral Defense ? Department of Electrical Engineering



Ph.D. Candidate: Shen Ren

Advisor: Prof. David. A. B. Miller

Date: Monday, Dec 13th, 2010

Time: 10am (Refreshments start at 9:45am)

Location: CISX Auditorium (101X)

Title: Ge/SiGe Quantum Well Waveguide Modulator for Optical Interconnect
Systems



*Abstract*

Thanks to the development of silicon VLSI technology over the past several
decades, we can now integrate far more transistors onto a single chip than
ever before. However, this also imposes more stringent requirements, in
terms of bandwidth, density, and power consumption, on the interconnect
systems that link transistors. The interconnect system is currently one of
the major hurdles for the further advancement of the electronic technology.
Optical interconnect is considered a promising solution to overcome the
interconnect bottleneck.



In this presentation, I will first briefly introduce the optical
interconnect system. Then a special type of device in the optical
interconnect system, the optical waveguide modulator that is based on
Ge/SiGe quantum well (QW) structures, will be presented. Such QW structures
can be grown monolithically on silicon substrates in a fully CMOS compatible
fashion. For the first time, we demonstrated the selective epitaxial growth
of these structures on patterned substrates. The selective epitaxy exhibits
minimal pattern sensitivity under optimized growth conditions. Compared to
its counterparts through bulk epitaxy, the p-i-n diodes from selective
epitaxy demonstrate very low reverse leakage current and high reverse
breakdown voltage. Strong quantum-confined Stark effect (QCSE) is, for the
first time, demonstrated in this material system in the telecommunication
C-band at room temperature. Then I will present our approach of integrating
the Ge/SiGe QW active optical modulators into the silicon-on-insulator (SOI)
waveguide platform through selective epitaxial growth. We proposed,
analyzed, and experimentally demonstrated a novel approach to realize the
butt coupling between SOI waveguide and Ge QW waveguide modulator using a
thin dielectric spacer. 3.2dB modulation contrast ratio is achieved with
merely 1V dynamic swing. We also show high speed modulation up to 3.5GHz,
which is currently limited by our testing capability.


-- 
Best wishes,

Shen Ren

Department of Electrical Engineering
Stanford University


The optimist thinks this is the best of all possible worlds. The pessimist
fears it is true.
- Robert Oppenheimer
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From cachang at stanford.edu  Mon Dec 13 13:47:20 2010
From: cachang at stanford.edu (Chia-Ming Chang)
Date: Mon, 13 Dec 2010 13:47:20 -0800 (PST)
Subject: [Reminder] Special Seminar - Prof. Ivan Kaminow (UC Berkeley),
 Tuesday Dec.14,	4:15 PM, Nano 232
In-Reply-To: <356498290.428589.1291761564286.JavaMail.root@zm06.stanford.edu>
Message-ID: <474046208.554319.1292276840253.JavaMail.root@zm06.stanford.edu>






Special Seminar Presented by the Stanford Optical Society 

Lightwave Modulators: Early Research at Bell Labs 

Prof. Ivan P. Kaminow 

EECS, UC Berkeley 



Tuesday, December 14, 4:15 PM, Nano Center 232 

Refreshments at 4PM 



Ted Maiman?s announcement of the ruby laser in May 1960 created great excitement worldwide, and particularly at Bell Labs. I was in the Microwave Systems Research Lab, soon to become the Lightwave Systems Research Lab, in Holmdel, NJ. Many of my colleagues decided to pursue laser research. Based on my experience with microwave systems, I decided to explore broadband light modulators that would be key for any telecom system. In my talk, I plan to touch on some of the highlights of a 15-year period of research on electrooptic modulators in the Bell Labs ambience. I include a 9 GHz travelling wave modulator, studies of electrooptic materials and photonic integrated circuits. 



About the speaker 

Ivan Kaminow retired from Bell Labs in 1996 after a 42-year career (1954-1996), mostly in lightwave research. At Bell Labs, he did seminal studies on electrooptic modulators and materials, Raman scattering in ferroelectrics, integrated optics (including titanium-diffused lithium niobate modulators), semiconductor lasers (including the DBR laser, ridge waveguide InGaAsP laser and multi-frequency laser), birefringent optical fibers, and WDM lightwave networks. Later, as Head of the Photonic Networks and Components Research Department, he led research on WDM components (including the erbium-doped fiber amplifier, waveguide grating router and the fiber Fabry-Perot resonator), and on WDM local and wide area networks. Earlier (1952-1954), he did research on microwave antenna arrays at Hughes Aircraft Company. 

After retiring from Bell Labs, he served as IEEE Congressional Fellow on the staffs of the House Science Committee and the Congressional Research Service (Science Policy Research Division) in the Library of Congress. From 1997 to 1999, he returned to Lucent Bell Labs as a part-time Consultant. He also established Kaminow Lightwave Technology to provide consulting services to various technology companies, and to patent and litigation law firms. In 1999 he served as Senior Science Advisor to the Optical Society of America in Washington. He also served on a number of professional committees. He received degrees from Union College (BSEE), UCLA (MSE) and Harvard (AM, Ph.D.). He was a Hughes Fellow at UCLA and a Bell Labs Fellow at Harvard. 

He has been Visiting Professor at Princeton, Berkeley, Columbia, the University of Tokyo, and Kwangju University (Korea). Currently, he is Adjunct Professor in EECS at University of California, Berkeley, where he has been teaching since 2004 (ee290F. Advanced Topics in Photonics [spring 2004]; ee233. Lightwave Systems [spring 2006]; seminar on Plasmonics [spring, fall 2007] and seminar on Photonics and Plasmonics [spring, fall 2008; spring, fall 2009; spring, fall 2010]). 

He has published over 240 papers, received 47 patents, and has written or co-edited 5 books, the most recent being "Optical Fiber Telecommunications V A&B," co-edited with Tingye Li and Alan Willner, published in March 2008. Kaminow is a Life Fellow of IEEE, and Fellow of APS and OSA. He is the recipient of the Bell Labs Distinguished Member of Technical Staff Award, IEEE Quantum Electronics Award, OSA Charles Townes Award, IEEE/LEOS/OSA John Tyndall Award, IEEE Third Millennium Medal, Union College Alumni Gold Medal and IEEE Photonics Award. He is a member of the National Academy of Engineering, a Diplomate of the American Board of Laser Surgery, and a Fellow of the New York Academy of Medicine. 










Stanford Optical Society: http://photons.stanford.edu 

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From mtang at stanford.edu  Mon Dec 13 15:50:51 2010
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 13 Dec 2010 15:50:51 -0800
Subject: Last 2010 Venture Clinic, Thursday, Dec. 16, 4 pm, Allen 101
Message-ID: <4D06B15B.1010405@stanford.edu>

Dear Labmembers:

 

 

Shahin Farschi of Lux Capital will be hosting what will be the 

last Venture Clinic of the year this Thursday, Dec. 16 at 4 pm in Allen 101.

In addition, we will have a special guest, Gavin McCraley, from Wilson Sonsini 

Goodrich & Rosati in Palo Alto, a law firm specializing startups.

Learn about the current conditions in the venture world or discuss 

your startup ideas with a couple of experienced venturists.  

 

Shahin may also be contacted directly:

 

 

Shahin Farshchi, Ph.D.

Senior Associate

Lux Capital Management, LLC

C: 925.323.2784

http://www.luxcapital.com




From rissman at stanford.edu  Tue Dec 14 12:03:43 2010
From: rissman at stanford.edu (Paul Rissman)
Date: Tue, 14 Dec 2010 12:03:43 -0800
Subject: Fwd: [foundryoutreach] The Molecular Foundry Call for Proposals
Message-ID: <4D07CD9F.8070507@stanford.edu>



-------- Original Message --------
Subject: 	[foundryoutreach] The Molecular Foundry Call for Proposals
Date: 	Tue, 14 Dec 2010 10:20:02 -0800
From: 	Molecular Foundry <lmstclaire at lbl.gov>
Reply-To: 	foundry at lbl.gov
To: 	foundryoutreach at lbl.gov, mf-people at lbl.gov



*Call for User Proposals - The Molecular Foundry*

*Call for Proposals Begins - Wednesday, December 15, 2010
*

*Submission Deadline - Friday, January 14, 2011*

*Projected Award Date - Tuesday, April 4, 2011*


Dear Colleagues,

The Molecular Foundry <http://foundry.lbl.gov/> at Lawrence Berkeley 
National Laboratory (LBNL), a Department of Energy (DOE) national 
nanoscience user facility, is currently accepting requests for user 
access to its instruments, capabilities and skilled technical staff from 
scientists and engineers who are seeking to enhance their own research 
projects. Requests from potential users, in the form of web-based 
standard proposals, must be received not later than January 14, 2011 to 
be considered in our current semiannual call cycle.

The mission of the LBNL Molecular Foundry is to provide researchers from 
academic, government and industrial laboratories from around the world 
access to instruments, materials, technical expertise and training in 
nanoscience. Access to the Foundry is free of charge for research that 
is in the public domain and intended for open publication. Users wishing 
to generate as well as maintain confidential information and data will 
pay a full-cost-recovery rate, but also have greater latitude regarding 
collaboratively generated intellectual property.

The Molecular Foundry hosts six Facilities focusing on the 
multidisciplinary development and understanding of "soft" (biological 
and polymeric) and "hard" (inorganic and microfabricated) nanostructured 
building blocks and their integration into complex functional 
assemblies. These research facilities serve as a particularly valuable 
resource for users pursuing multidisciplinary research in nanoscience 
(e.g., physicists interested in learning biological techniques, 
biologists seeking nanofabrication expertise, experimentalists pursing 
theoretical studies). All projects that may benefit from Foundry 
capabilities are welcome, particularly those which relate to our four 
research themes and reflect areas of expertise of the Molecular Foundry 
staff. The Foundry strongly encourages project submissions that take 
advantage of our other LBNL user facilities, including the Advanced 
Light Source, Energy Sciences Network, Joint Genome Institute, the 
National Energy Research Scientific Center, and the National Center for 
Electron Microscopy. The Foundry also maintains agreements with 
affiliated laboratories that can be requested within your web-based 
proposal submission.

Prospective users are invited and strongly encouraged to contact 
Molecular Foundry staff in the respective theme areas to discuss 
proposal ideas and to learn more about special capabilities of 
particular interest (visit the "Our Staff" section at the Foundry web 
site). We encourage discussion of your proposal's central ideas to 
ensure the Foundry has appropriate facilities, equipment and staff to 
perform your requested research.

Decisions reached in this round of proposal submissions will be 
announced approximately ten weeks after submission deadline; for this 
call we anticipate a notification date of April 4, 2011. All approved 
projects will receive user access and work may begin as soon as 
scheduled after this notification, having a signed user agreement in 
place between institutions and completion of EH&S requirements.

For further information, please visit:

_/The Molecular Foundry Home Page/_
_http://foundry.lbl.gov_

/_The User Program Description_/
http://foundry.lbl.gov/scientific/index.html

_/The User Proposal Process/_
http://foundry.lbl.gov/scientific/Proposal_Process.html

/_Molecular Foundry Staff Scientists_/
http://foundry.lbl.gov/about/staff.html

_/LBNL User Facilities and Affiliated Laboratories/_
http://foundry.lbl.gov/six/affiliated.html

We look forward to receiving your new proposal. Should you have any 
questions regarding this process, please contact the User Program Office 
by e-mail at foundry at lbl.gov <mailto:foundry at lbl.gov> or by telephone at 
510-486-4574.


-- 

The Molecular Foundry
http://foundry.lbl.gov
foundry at lbl.gov
ph: 510.486.7493

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From mtang at stanford.edu  Wed Dec 15 06:57:27 2010
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 15 Dec 2010 06:57:27 -0800
Subject: Reminder:  Annual lab shutdown start 7 am Thursday
Message-ID: <4D08D757.4090403@stanford.edu>

Dear labmembers --

Just a reminder of the annual lab shutdown, starting Thursday, Dec. 16 
at 7 am.  Please be aware of the lab and CAD room cleanups underway. The 
lab reopens on Tuesday, Jan. 4 at 7 am.

Happy holiday!

You SNF staff


From shott at stanford.edu  Thu Dec 16 08:35:10 2010
From: shott at stanford.edu (John Shott)
Date: Thu, 16 Dec 2010 08:35:10 -0800
Subject: Toxic Gas alarm testing today and tomorrow ....
Message-ID: <4D0A3FBE.9020407@stanford.edu>

SNF Lab Members and Allen Building Occupants:

Today and tomorrow the SNF staff in conjunction with an independent 
testing company and Santa Clara county officials will be conducting 
tests of each of the toxic gas detectors in our facility.  Part of this 
testing checks to make sure that appropriate blue toxic gas alarms and 
fire alarms ring.  As a result there will likely be at least a couple 
.... and conceivably many ... times that the blue toxic gas alarms 
and/or fire alarms may ring today and tomorrow.

We know that these are loud and hard to ignore.  However, these, can be 
safely ignored ... unless you quickly hear announcements that there is a 
real emergency.  Note: if there is a real smoke alarm, fire, earthquake, 
or other emergency situation, the alarms will ring normally and the fire 
department will be called,  In that case it is important to make the SNF 
staff aware of any real alarm situations such as a fire or medical 
emergency.

While we apologize for the disruption that this testing causes, but this 
is an important element of ensuring all of our safety in terms of proper 
detection and notification of detected toxic gases during the entire year.

Thanks,

John



From mtang at stanford.edu  Thu Dec 16 15:47:14 2010
From: mtang at stanford.edu (Mary Tang)
Date: Thu, 16 Dec 2010 15:47:14 -0800
Subject: Reminder:  Last Venture Clinic, Today, Thursday, Dec. 16, 4 pm Allen
 101
Message-ID: <4D0AA502.5050507@stanford.edu>

Dear Labmembers:

 

 

Shahin Farschi of Lux Capital will be hosting what will be the 

last Venture Clinic of the year this Thursday, Dec. 16 at 4 pm in Allen 101.

In addition, we will have a special guest, Gavin McCraley, from Wilson Sonsini 

Goodrich & Rosati in Palo Alto, a law firm specializing startups.

Learn about the current conditions in the venture world or discuss 

your startup ideas with a couple of experienced venturists.  

 

Shahin may also be contacted directly:

 

 

Shahin Farshchi, Ph.D.

Senior Associate

Lux Capital Management, LLC

C: 925.323.2784

http://www.luxcapital.com

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu