From kattsai at stanford.edu Mon Feb 1 11:27:05 2010 From: kattsai at stanford.edu (Katherine Tsai) Date: Mon, 1 Feb 2010 11:27:05 -0800 Subject: Mask aligner optical filter Message-ID: <1c62e49d1002011127m280a5a72v4c797b97af74dc96@mail.gmail.com> Hi, Does anyone have a mask aligner optical filter (e.g., Omega Optical PL-360LP) for SU-8 photolithography that I could borrow? Thanks, Katherine Tsai -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Mon Feb 1 16:04:14 2010 From: mbaran at stanford.edu (Maureen Baran) Date: Mon, 1 Feb 2010 16:04:14 -0800 Subject: Found a Black and Purple pencil/pen case on the bench out side the lab Message-ID: <008901caa39b$41100df0$c33029d0$@edu> Dear Labmembers, A black and purple canvas zippered pencil/pen case has been sitting on the bench outside the lab for a couple of days. If this is yours please come to my cubicle and pick it up. Thanks, Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwpchen at stanford.edu Tue Feb 2 01:57:33 2010 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 02 Feb 2010 01:57:33 -0800 Subject: Reminder: seminar TODAY 2/2 Allen 101X 4-5pm -- Rotary Micromotor Supported on Microball Bearings Message-ID: <4B67F70D.3070405@stanford.edu> Design, Fabrication, and Characterization of a Rotary Micromotor Supported on Microball Bearings Nima Ghalichechian, Ph.D. Senior Principal MEMS Engineer, FormFactor Inc. Tuesday, Feb 2, 2010 Allen 101X 4:00?5:00pm Abstract: The design, fabrication, and characterization of a rotary micromotor supported on microball bearings developed at the University of Maryland will be presented. This has been the first demonstration of a rotary micromachine with a robust mechanical support provided by microball-bearing technology. One key challenge in the realization of a reliable micromachine is the development of a bearing that would result in high stability, low friction, and high resistance to wear. A six-phase, rotary, bottom-drive, variable-capacitance micromotor is designed, simulated, and fabricated on silicon using benzocyclobutene low-k dielectric films. A characterization methodology is developed to measure and extract the angular displacement, velocity, acceleration, torque, mechanical power, coefficient of friction, and frictional force through non-contact techniques. A top angular velocity of 517 rpm corresponding to the linear tip velocity of 324 mm/s is measured. Measurement of the transient response of the rotor indicated that the torque is 5.62+/-0.5 micro N-m. Such a rotary micromotor can be used in developing micropumps which are highly demanded microsystems for fuel delivery, drug delivery, cooling, and vacuum applications. Examples of successful applications of this work will be presented. From sarves at stanford.edu Tue Feb 2 04:43:00 2010 From: sarves at stanford.edu (Sarves Verma) Date: Tue, 2 Feb 2010 04:43:00 -0800 (PST) Subject: Phd Orals: Sarves Verma, February 10th, 1:00 pm, CISX Auditorium In-Reply-To: <742686644.1115411265114557300.JavaMail.root@zm06.stanford.edu> Message-ID: <1472861410.1115431265114580764.JavaMail.root@zm06.stanford.edu> Tunnel Barrier Engineering for Flash Memory Technology Sarves Verma Advisor: Professor Krishna Saraswat Department of Materials Science & Engineering Department of Electrical Engineering Wednesday, February 10th, 2010, 1:00 pm CISX Auditorium (Refreshments served at 12:45pm) Abstract The conventional Flash memory faces two critical obstacles in the future: Density and Voltage scaling. Density is associated with scaling the gate length. The gate length cannot be reduced beyond a point because it requires a commensurate gate stack, specifically, tunnel oxide scaling for maintaining good gate control and short channel effects. However, the gate-tunnel oxide (GTO) reduction has a practical lower bound of ~ 7-9nm (depending upon NAND or NOR) due to leakage and data retention constraints. Below this GTO thickness, irrespective of how inter-poly dielectric (referred as ONO) is scaled, the electric field across it during charge retention increases, leading to unacceptable levels of tunneling current. The second major challenge with scaling is to reduce the programming and erase operation voltages. The usual operation voltages for these processes are much greater (15-18 Volts). With scaling, it is imperative for operating voltages to reduce. Typically, read voltages are low, while erase and program operations stress the charge pump requirements and dictate the maximum voltages. The major impediment in erase voltage scaling is, once again, the inability to scale the gate oxide. Recently, engineered tunnel barriers were proposed as solutions to scaling gate oxide. It is postulated that engineered barriers offer faster program/erase yet maintain excellent retention. However, a detailed characterization of engineered tunnel dielectrics and a deeper understanding of the erase/program mechanism are sought to establish its implementation. In the first half of the talk, we perform simulations to establish the feasibility of tunnel barriers under Flash memory device constraints. We look at different higher-K materials as a replacement for SiO2 and perform global optimization over different materials. This is first done under absence of traps in these materials. Later the assumptions are relaxed and traps are incorporated in these materials. In the second part of the talk, we implement engineered tunnel barriers based on the simulation results. However, it is observed that presence of traps in these materials degrades performance. Retention loss and endurance degradation are identified as two major problems, hindering implementation and scaling. In the third and final part, we discuss solutions to these problems. Fluorine is well known as a passivating agent for traps in high-K dielectrics. We incorporate fluorine in engineered tunnel stacks and show electrical & physical characterization results to emphasize its advantages. Finally, alternative tunnel barrier structures and materials are discussed to continue scaling of gate dielectrics. From mihuhou at stanford.edu Tue Feb 2 15:11:59 2010 From: mihuhou at stanford.edu (Ying Chen) Date: Tue, 2 Feb 2010 15:11:59 -0800 Subject: Phd Orals: Ying Chen, February 8th, 10:00 am, CISX Auditorium References: <1472861410.1115431265114580764.JavaMail.root@zm06.stanford.edu> Message-ID: <00eb01caa45d$1f9a9a60$0ff10c80@stanford.edu> ?Templated Electrochemical Deposition and Titanium Dioxide Nanoframe Dye-Sensitized Solar Cells? Stanford University PhD Dissertation Defense Ying Chen (mihuhou at stanford.edu) Research Advisor: Yoshio Nishi Department of Electrical Engineering Time: Monday, February 8th, @ 10:00 am (refreshments served at 9:45 am) Location: CISX Auditorium ABSTRACT Dye-sensitized Solar Cells (DSCs) have become a popular research topic because of their low-cost, high-efficiency solar energy conversion. While nanoparticle cell is currently the most efficient and stable DSC, nanowire cells have shown some significant advantage that would make them superior to nanoparticle cells. One such advantage is the fast and direct electron transport, which was reported to be several hundred times faster than trap-limited diffusion in nanoparticle cells, which can lower device efficiency caused by electron-hole recombination. The efficiency of current nanowire cells is primarily limited by the insufficiency of their internal surface area due to the mechanical weakness of nanowire structures. One solution to strengthen the nanowire structure is to build a framework where individual nanowires are connected and prevented from clustering, so as to increase the internal surface area and the efficiency of the solar cell. Nanoframes containing 20nm diameter TiO2 nanowire arrays were synthesized with polymer templates via cathodic Sol-Gel deposition followed by 450oC sintering. Dye-sensitized Solar Cells based on this nanoframe were fabricated and the effects of the top cover in the nanoframe, which is the only difference between nanoframe cells and nanowire cells, were investigated. The results show that the top cover does not prevent the I- and I3- ions underneath from diffusing freely in the electrolyte and causes no deterioration of the cell performance. The nanoframe cell is a promising device in which nanowire arrays are strengthened and the effective internal surface area have the potentiality to be increased without sacrificing the advantages of nanowire cell compared to nanoparticle cell. From bhardin at stanford.edu Wed Feb 3 17:19:26 2010 From: bhardin at stanford.edu (Brian E Hardin) Date: Wed, 3 Feb 2010 17:19:26 -0800 Subject: Nanosociety Meeting Friday @ 12:15pm, McCullough 115: Intercalation in polymer:fullerene organic solar cells Message-ID: <69e1b16c1002031719w4dd696fet1ddd3144c343f47e@mail.gmail.com> Nicky Cates will discuss how the intercalation of buckyballs affect the morphology and performance of organic solar cells. The talk will began at 12:15pm in McCullough 115. Pizza will be served. Intercalation in polymer:fullerene organic solar cells *Nicky Cates* Material Science and Engineering McGehee Group Polymer:fullerene bulk heterojunction (BHJ) organic solar cells have achieved power conversion efficiencies up to 7.9% and are attracting a great deal of attention as a potential low-cost alternative to traditional inorganic photovoltaics. Fullerene intercalation between the side chains of conjugated polymers has recently been demonstrated in some polymer:fullerene BHJ solar cells. We investigate intercalation in the crystalline polymer (pBTTT) and the amorphous polymer (MDMO-PPV) using a variety of techniques including X-ray diffraction (XRD), photoluminescence (PL) and current-voltage measurements. This work demonstrates that intercalation can be controlled by adjusting the fullerene size and side-chain branching, clarifies the effect of intercalation on solar-cell properties and explains why intercalation may be responsible for the significant increase in the MDMO-PPV hole mobility when it is blended with phenyl-c61-butyric acid methyl ester (PC61BM). -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwpchen at stanford.edu Thu Feb 4 03:14:36 2010 From: jwpchen at stanford.edu (Peter Chen) Date: Thu, 04 Feb 2010 03:14:36 -0800 Subject: seminar Tues 2/9 Allen 101X 4-5pm -- Piezoelectric Aluminum Nitride MEMS Resonator Technology Message-ID: <4B6AAC1C.3090704@stanford.edu> Piezoelectric Aluminum Nitride MEMS Resonator Technology Philip Stephanou, Ph.D. Co-Founder, Harmonic Devices, Inc. Tuesday, Feb 9, 2010 Allen 101X 4:00?5:00pm Abstract: Electromechanical frequency control components such as quartz crystals and surface or bulk acoustic wave (SAW or BAW) devices are ubiquitous as signal processing elements in electronic communication, computing and information technology systems. Billions of these components are manufactured annually to sate the global needs of the commercial, industrial, and defense sectors. Contemporary demands for low-cost, highly-integrated portable wireless communication solutions provide the greatest incentive in terms of potential technological, economic and social impact to continue innovating passive electro-acoustic devices such as oscillator crystals and bandpass filters. This talk will review the evolution of and current state-of-the-art in MEMS resonators and introduce Harmonic Devices Inc., a startup company founded to commercialize thin-film piezoelectric RF MEMS technology. Biography: Dr. Philip Stephanou is an expert in the area of piezoelectric MEMS design, fabrication and testing. Philip holds a Ph.D. in Mechanical Engineering from the University of California at Berkeley where, as a member of the Berkeley Sensor and Actuator Center (BSAC), he co-invented a new class of thin-film aluminum nitride (AlN) based electromechanical resonators and filters. He has developed a variety of AlN MEMS resonator topologies and received a best paper award at the 2006 IEEE Ultrasonics Symposium for developing the first thin-film, lithography-defined, fundamental mode MEMS resonators to break the GHz barrier. In 2005, Philip co-founded Harmonic Devices, Inc. (HDI) in order to commercialize multi-frequency bandpass filter solutions based on the AlN contour mode resonator technology. HDI has received funding from NASA, DARPA and NSF as well as commercial entities. Philip co-founded Verreon, Inc. in 2009. From ahazeghi at stanford.edu Thu Feb 4 12:03:38 2010 From: ahazeghi at stanford.edu (Arash Hazeghi) Date: Thu, 4 Feb 2010 12:03:38 -0800 (PST) Subject: RF attenuator Message-ID: <1226147989.4130181265313818073.JavaMail.root@zm03.stanford.edu> Hello, Does anyone have access to a RF (F<1MHZ) attenuator (100dB or more) that I can barrow for a short test. Thanks, Arash -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Thu Feb 4 13:32:42 2010 From: shott at stanford.edu (John Shott) Date: Thu, 04 Feb 2010 13:32:42 -0800 Subject: RF attenuator In-Reply-To: <1226147989.4130181265313818073.JavaMail.root@zm03.stanford.edu> References: <1226147989.4130181265313818073.JavaMail.root@zm03.stanford.edu> Message-ID: <4B6B3CFA.5060300@stanford.edu> Arash: There is a little WaveTek step attenuator in Allen 152 that would appear to go up to 81 dB of attenuation with BNC in and out connectors on each side. It's on the right end of the big rarely used rack at about knee-height. There are also, I believe, some nice Hewlett-Packard attenuators up in Tom Lee's circuit lab in Allen 219 that have the fancy little SMA (I think) connectors. It would not surprise me to find that they have both fixed and stepped attenuators. I don't know who would be best to ask about borrowing one or more for a short time. Good luck, John From yychung at stanford.edu Fri Feb 5 17:26:08 2010 From: yychung at stanford.edu (Yoonyoung Chung) Date: Fri, 5 Feb 2010 17:26:08 -0800 (PST) Subject: 300 nm SiO2 on 1-100 ohm/sq wafer Message-ID: <2044628836.4734591265419568903.JavaMail.root@zm02.stanford.edu> Dear Labmembers, I'd like to try my new process on a 300 nm SiO2 wafer (1-100 ohm/sq). If anyone plans to grow 300 nm SiO2 on 1-100 ohm/sq Si wafers (N or P type), I wonder if I could get one. Thank you. Regards, Yoonyoung From mtang at stanford.edu Sat Feb 6 07:25:32 2010 From: mtang at stanford.edu (Mary Tang) Date: Sat, 06 Feb 2010 07:25:32 -0800 Subject: Scheduled Facilities Work: Temperature loss 2/12-2/16 Message-ID: <4B6D89EC.5060106@stanford.edu> Dear labmembers -- Due to additional work required to tied the new Nano building into the campus facilities, the steam system to the area of campus including SNF will be shut down from Friday, 2/12 at 10 am to Tuesday morning, 2/16 at 6 pm (see http://bgm.stanford.edu/groups/build_maint/plannedshutdowns) Unfortunately, this means that there will be no temperature or humidity control in the lab. Although this should have no effect on the operation of most (if not all) systems in the lab, this could have a significant effect on temperature sensitive operations, namely: photolithography (resist coating, contact align exposure, develop) and wet etching (non-temperature controlled baths, such as HF and BOE.) We are working to see what might be done to minimize the impact on the lab, but please be aware of this and try to plan your critical experiments accordingly. Your SNF Staff From mihuhou at stanford.edu Sun Feb 7 10:58:39 2010 From: mihuhou at stanford.edu (Ying Chen) Date: Sun, 7 Feb 2010 10:58:39 -0800 Subject: Reminder: Phd Orals: Ying Chen, February 8th, 10:00 am, CISX Auditorium Message-ID: <00b301caa827$8f9c0c40$0bf00c80@stanford.edu> ?Templated Electrochemical Deposition and Titanium Dioxide Nanoframe Dye-Sensitized Solar Cells? Stanford University PhD Dissertation Defense Ying Chen (mihuhou at stanford.edu) Research Advisor: Yoshio Nishi Department of Electrical Engineering Time: Monday, February 8th, @ 10:00 am (refreshments served at 9:45 am) Location: CISX Auditorium ABSTRACT Dye-sensitized Solar Cells (DSCs) have become a popular research topic because of their low-cost, high-efficiency solar energy conversion. While nanoparticle cell is currently the most efficient and stable DSC, nanowire cells have shown some significant advantage that would make them superior to nanoparticle cells. One such advantage is the fast and direct electron transport, which was reported to be several hundred times faster than trap-limited diffusion in nanoparticle cells, which can lower device efficiency caused by electron-hole recombination. The efficiency of current nanowire cells is primarily limited by the insufficiency of their internal surface area due to the mechanical weakness of nanowire structures. One solution to strengthen the nanowire structure is to build a framework where individual nanowires are connected and prevented from clustering, so as to increase the internal surface area and the efficiency of the solar cell. Nanoframes containing 20nm diameter TiO2 nanowire arrays were synthesized with polymer templates via cathodic Sol-Gel deposition followed by 450oC sintering. Dye-sensitized Solar Cells based on this nanoframe were fabricated and the effects of the top cover in the nanoframe, which is the only difference between nanoframe cells and nanowire cells, were investigated. The results show that the top cover does not prevent the I- and I3- ions underneath from diffusing freely in the electrolyte and causes no deterioration of the cell performance. The nanoframe cell is a promising device in which nanowire arrays are strengthened and the effective internal surface area have the potentiality to be increased without sacrificing the advantages of nanowire cell compared to nanoparticle cell. From eperalta at snf.stanford.edu Mon Feb 8 01:06:53 2010 From: eperalta at snf.stanford.edu (Edgar Peralta) Date: Mon, 8 Feb 2010 01:06:53 -0800 Subject: bonding to quartz wafers Message-ID: <6828a441002080106i1b8fab38v70695f024a92fca9@mail.gmail.com> For those out there experienced with wafer bonding, I'd like to know what materials bond well to quartz (or where I could find such information) Thanks! From mtang at stanford.edu Mon Feb 8 08:56:48 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 08 Feb 2010 08:56:48 -0800 Subject: Process Clinic Today (Monday) 2-4 pm Message-ID: <4B704250.803@stanford.edu> Greetings labmembers -- Just a reminder that there is a Process Clinic today (Monday) from 2-4 pm in the cubicle area outside of Maureen's office. Staff and senior labmembers will be on hand to answer questions and brainstorm ideas to address process issues. Bring your ideas, process questions, your process runsheets, device layouts, and whatever else. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From trish at shasta.stanford.edu Tue Feb 9 11:20:57 2010 From: trish at shasta.stanford.edu (Patricia Halloran-Krokel) Date: Tue, 9 Feb 2010 11:20:57 -0800 (PST) Subject: Concerning flyers flyer re: donating laptops Message-ID: Hi All - the below msg has been sent by CS Dept mgr * >Date: Tue, 09 Feb 2010 10:13:07 -0800 From: Peche Turner To: faculty-plus at cs.Stanford.EDU Subject: [Fwd: flyer re: donating laptops] Hi all, Many of us received a flyer about donating old laptops this morning. The person listed is no longer affiliated with Stanford and I don't believe he has any permission to be doing this. Please do not offer him any of our laptops. Reminder: any assets purchased with Stanford funds must be disposed of via the Stanford Property Office, see your admins for assistance. Thanks, Peche -- Peche Turner Department Manager Computer Science Stanford University (650) 723-5396 From jwpchen at stanford.edu Tue Feb 9 14:12:17 2010 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 09 Feb 2010 14:12:17 -0800 Subject: Reminder: seminar TODAY Tues 2/9 Allen 101X 4-5pm -- Piezoelectric AlN MEMS Resonator Technology Message-ID: <4B71DDC1.5060401@stanford.edu> Piezoelectric Aluminum Nitride MEMS Resonator Technology Philip Stephanou, Ph.D. Co-Founder, Harmonic Devices, Inc. Tuesday, Feb 9, 2010 Allen 101X 4:00?5:00pm Abstract: Electromechanical frequency control components such as quartz crystals and surface or bulk acoustic wave (SAW or BAW) devices are ubiquitous as signal processing elements in electronic communication, computing and information technology systems. Billions of these components are manufactured annually to sate the global needs of the commercial, industrial, and defense sectors. Contemporary demands for low-cost, highly-integrated portable wireless communication solutions provide the greatest incentive in terms of potential technological, economic and social impact to continue innovating passive electro-acoustic devices such as oscillator crystals and bandpass filters. This talk will review the evolution of and current state-of-the-art in MEMS resonators and introduce Harmonic Devices Inc., a startup company founded to commercialize thin-film piezoelectric RF MEMS technology. From jwpchen at stanford.edu Tue Feb 9 15:59:44 2010 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 09 Feb 2010 15:59:44 -0800 Subject: Reminder: seminar NOW Tues 2/9 Allen 101X 4-5pm -- Piezoelectric AlN MEMS Resonator Technology In-Reply-To: <4B71DDC1.5060401@stanford.edu> References: <4B71DDC1.5060401@stanford.edu> Message-ID: <4B71F6F0.3090401@stanford.edu> Piezoelectric Aluminum Nitride MEMS Resonator Technology Philip Stephanou, Ph.D. Co-Founder, Harmonic Devices, Inc. Tuesday, Feb 9, 2010 Allen 101X 4:00?5:00pm Abstract: Electromechanical frequency control components such as quartz crystals and surface or bulk acoustic wave (SAW or BAW) devices are ubiquitous as signal processing elements in electronic communication, computing and information technology systems. Billions of these components are manufactured annually to sate the global needs of the commercial, industrial, and defense sectors. Contemporary demands for low-cost, highly-integrated portable wireless communication solutions provide the greatest incentive in terms of potential technological, economic and social impact to continue innovating passive electro-acoustic devices such as oscillator crystals and bandpass filters. This talk will review the evolution of and current state-of-the-art in MEMS resonators and introduce Harmonic Devices Inc., a startup company founded to commercialize thin-film piezoelectric RF MEMS technology. From mrlin at stanford.edu Wed Feb 10 14:03:29 2010 From: mrlin at stanford.edu (Albert Lin) Date: Wed, 10 Feb 2010 14:03:29 -0800 (PST) Subject: EE PhD Oral Examination - Albert Lin, Friday, February 12, 2010; 3:30pm Message-ID: <1541535855.1152551265839409889.JavaMail.root@zm07.stanford.edu> Carbon Nanotube Devices and Circuits Speaker: Albert Lin, Department of Electrical Engineering Advisor: Professor H.-S. Philip Wong Associate Advisor: Professor Subhasish Mitra Date: Friday, February 12, 2010 Time: 3:30PM Location: Packard 202 Abstract Carbon Nanotube Field Effect Transistor (CNFET) technology has received a lot of attention in the past few years as a promising candidate for future integrated circuits, due in part to its potential for ballistic transport and excellent intrinsic delay. However, to realize the potential of CNFETs, carbon nanotube (CNT) technologies that are scalable and robust must be developed. Such scalable carbon nanotube technologies are presented here, from carbon nanotube material synthesis to circuit fabrication. In particular, four main achievements are discussed: (1) Wafer-scale aligned CNT growth, delivering high-density, ?nearly-perfectly? straight CNTs; (2) Wafer-scale CNT Transfer, enabling independent optimization of growth and device fabrication processes; (3) VLSI- compatible device and circuit fabrication, achieving repeatable and reliable wafer-scale integration; and (4) ACCNT (pronounced as ?accent?), a VLSI-compatible metallic-CNT tolerant design methodology, achieving robust circuits despite imperfect CNT materials. Using these techniques, CNT transistors, inverters, NANDs, and other logic gates and small circuits are experimentally demonstrated. These four contributions propel carbon nanotube technology forward towards the vision of robust large-scale carbon nanotube circuits. From linyouc at stanford.edu Wed Feb 10 17:35:34 2010 From: linyouc at stanford.edu (Linyou Cao) Date: Wed, 10 Feb 2010 17:35:34 -0800 (PST) Subject: PMMA dry-etching mask on Lampoly or P5000 Message-ID: <31908582.1101101265852134559.JavaMail.root@zm06.stanford.edu> Dear All, I am thinking about using PMMA as mask for dry etching poly-Si (etching depth ~180nm). Has anyone ever tried that on either Lampoly and P5000? I was hoping to know if this way is doable or not. Many thanks, Linyou -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwpchen at stanford.edu Thu Feb 11 07:17:11 2010 From: jwpchen at stanford.edu (Peter Chen) Date: Thu, 11 Feb 2010 07:17:11 -0800 Subject: Seminar Tues 2/16 Allen 101X 4-5pm - Kurt Petersen -- MEMS Start-up Adventures: The Good, the Bad, and the Ugly Message-ID: <4B741F77.4040007@stanford.edu> Tuesday, Feb 16, 2010 Allen 101X 4:00?5:00pm MEMS Start-up Adventures: The Good, the Bad, and the Ugly Kurt Petersen President and Co-Founder, Cepheid Consulting Professor of Electrical Engineering, Stanford University Abstract: Many interesting stories happen during start-ups. Like the "outside air" guy, who was allergic to "inside air" - how did we solve this sensitive employment issue at NovaSensor? Also, what about the corporate chairman who vowed to take my house and my car and make sure that I never worked again? What about the lay-offs and the lawsuits? We will explain these and other adventures including the successes, the failures, and the strange incidents that happen in the real world of MEMS start-ups. Maybe, we will also get some insights into how some start-ups succeed and others don't. Biography: Kurt Petersen received his BS degree cum laude in EE from UC Berkeley in 1970. In 1975, he received a PhD in EE from the Massachusetts Institute of Technology. Dr. Petersen established a micromachining research group at IBM from 1975 to 1982, during which he wrote the review paper "Silicon as a Mechanical Material," published in the IEEE Proceedings (May 1982). This paper is still the most frequently referenced work in the field of micromachining and microelectromechanical systems (MEMS). Since 1982, Dr. Petersen has co-founded three successful companies in micromachining technology, Transensory Devices Inc. in 1982, NovaSensor in 1985, and Cepheid in 1996. All of these companies have become technical and commercial leaders in the field of MEMS devices and applications. Most recently, Cepheid was established with the mission of commercializing advanced MEMS techniques and other technologies for miniaturized, biomedical and microfluidic systems and instruments, particularly in the area of fast, portable, automated nucleic acid (DNA) analysis for diagnostic applications in the biomedical, environmental, and food industries as well as for bio-warfare defense. Cepheid has become a recognized industry leader in rapid DNA purification, detection, and analysis. Dr. Petersen has published over 100 papers, and has been granted over 25 patents in the field of micromachining. In 2001 he was awarded the IEEE Simon Ramo Medal for his contributions to MEMS. Dr. Petersen is a member of the National Academy of Engineering and is a Fellow of the IEEE in recognition of his contributions to "the commercialization of MEMS technology". From shott at stanford.edu Thu Feb 11 07:24:03 2010 From: shott at stanford.edu (John Shott) Date: Thu, 11 Feb 2010 07:24:03 -0800 Subject: Steam Outage this weekend ... Message-ID: <4B742113.5000008@stanford.edu> SNF Lab Members: We have learned that there will be another shutdown to the steam system that heats this building to complete the tie-in to the new Nano Center. They will plan to shutdown the system starting this Friday, February 12 at 10 p.m. They expect to have service restored by early Monday morning, February 15 ... and may get things back up late in the day on Sunday, February 14. We have met with both the Superintendent of the Nano Center construction team and with the head of the Stanford Steam Shop. They understand how critical temperature control is to our operation and have assured us that they will do everything possible to minimize the downtime and that our building will be the first to be returned to service. As many of you recall from last time, it is likely to get quite cold in the lab. Over and above our personal discomfort, we expect that the areas that are most likely to be affected will include the ebeam lithography tools, resist coat, and wet etch operations in room temperature baths (BOE and 50:1 HF, in particular). It is my understanding (subject to correction by more knowledgeable sources) that the ASML tool should not be affected as long as its environmental chamber can keep the tool at temperature. We apologize for this outage and any inconvenience that it causes. Let us know if you have any questions or concerns related to this steam outage. Thank you for your continued support, John From pruitt at stanford.edu Fri Feb 12 10:43:39 2010 From: pruitt at stanford.edu (Beth Pruitt) Date: Fri, 12 Feb 2010 10:43:39 -0800 Subject: MEMS seminar next Thursday Message-ID: Professor Ellis Meng, PhD USC Bioengineering Dept A MEMS Approach to Drug Delivery Thursday 2/18/10 4:15 pm Bldg 60 Room 120 Abstract: Novel micro- and nanotechnologies enable translational engineering solutions for next generation therapies to address vital unmet medical needs. In particular, the Biomedical Microsystems Laboratory is interested in the integration of multiple modalities (e.g. electrical, mechanical, and chemical) in miniaturized devices measuring no more than a few millimeters for use in fundamental scientific research, biomedical diagnostics, and therapy. Our approach focuses on the investigation of novel microelectromechanical systems (MEMS) fabricated from biocompatible polymers for in vitro, ex vivo, and in vivo use. This talk will describe efforts to produce polymer-based microsystems for drug delivery devices in several applications including the management of incurable ocular diseases, cancer, and small animal research. -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Feb 15 07:40:34 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 15 Feb 2010 07:40:34 -0800 Subject: Maskmaking/mask layout Clinic, Tuesday, Feb. 16, 3 pm Message-ID: <4B796AF2.5050508@stanford.edu> Greetings labmembers -- Bill Martin will be on hand Tuesday, Feb. 16, at 3 pm, to answer questions about maskmaking and mask layouts. Bill has many years of experience in making masks for industry and research and now represents Compugraphics and other suppliers specializing in University accounts. Bring your maskmaking questions and bring your CAD files to show Bill. We will meet in the cubicle area outside Maureen's office. Your SNF Staff From mtang at stanford.edu Mon Feb 15 08:10:02 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 15 Feb 2010 08:10:02 -0800 Subject: SNF Temp/Humidity Control are OK now Message-ID: <4B7971DA.8090902@stanford.edu> Dear labmembers -- As of now the lab is back to normal with respect to temperature and humidity. At SNF's request, the Steam shop worked to restart systems early. With regard to the ASML, Mark, the service engineer, will be in later this morning to check the system so please do not use until he has done so. Many thanks for your patience and apologies for the inconvenience. Your SNF staff From edmyers at stanford.edu Tue Feb 16 11:01:03 2010 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 16 Feb 2010 11:01:03 -0800 Subject: Latest Results and Applications using XeF2 etching. Message-ID: <6.2.5.6.2.20100216105745.0d765410@stanford.edu> Xactix, the manufacture of our XeF2 etch system will be on campus Wed. Feb. 24th. If you have any interest in the latest developments in XeF2 etching please join us. Latest Research Results and Applications using XeF2 etching. David Springer and Kyle Lebouitz, XACTIX, Inc. Wednesday February 24, 10:00am to 12 noon: Room: CIS101 This seminar will be divided into two parts. The first hour will be a presentation by David Springer, President of XACTIX, Inc. on the latest research results and examples of etching using XeF2 gas for multiple applications. In the second hour we will be joined by Kyle Lebouitz, XACTIX's CTO, for users to have a chance to discuss particular ideas, issues, problems with their use of the XACTIX XeF2 etcher in the fab. XeF2 etches Si, Ge, Mo and SiGe very selectively to most semiconductor materials. For example selectivities of over 1000:1 can be archived to films such as SiO2, and SiN with zero attack on almost all other materials including Al, PZT, AlN, photoresist, etc. XeF2 can also be used to etch transitional metals such as W, Ti, Ta, TiN and TaN, or conditions can be set to preserve these materials when etching silicon. Areas where XeF2 etching can show benefit include releasing MEMS, increasing die strength after dicing, removing barmier layers for metal deposition, removing silicon for failure analysis, removing silicon to expose the back of side of sensor circuits to enhance signal strength as well as other non semiconductor applications which require removing transitional metals. If you have any questions, please contact Ed Myers From whitejs at stanford.edu Tue Feb 16 10:00:48 2010 From: whitejs at stanford.edu (Justin White) Date: Tue, 16 Feb 2010 10:00:48 -0800 (PST) Subject: Today : University PhD Dissertation Defense for Justin White : 2:15pm in Packard 202 Message-ID: <1936977013.784011266343248398.JavaMail.root@zm02.stanford.edu> Department of Applied Physics University PhD Dissertation Defense Surface Plasmon Enhanced Photodetectors Justin Stewart White Research Advisor: Professor Mark Brongersma 16 February 2010 @2:15 p.m. (Refreshments at 2:00 p.m.) Location: Packard Building, Room 202 ABSTRACT Photodetectors play an increasingly vital role in information technology, forming the basis of modern fiber-optic communication systems as well as digital imaging for consumer, medical, and scientific applications. Innovation in the design and fabrication of photodetectors has been a key enabler in the drastic reduction in size of digital cameras such that a five megapixel camera can now be embedded in a cell phone, as well as the scaling of fiber-optic networks from transcontinental networks spanning hundreds of kilometers down to local networks within a server room spanning several meters. However, further scaling is inhibited by the fundamental diffraction limit of classical optics, which limits the ability to make efficient optical components at the nanoscale. In this talk I will present our work on utilizing surface plasmon polaritons, coherent electron oscillations coupled to a photon and bound to a metal-dielectric interface, to make semiconductor photodetectors with sub-wavelength active regions well below the classical diffraction limit and the optical absorption depth of the semiconductor. We theoretically investigate plasmon enhanced photodetector designs using finite-difference frequency domain (FDFD) numerical simulations of Maxwell's equations. FDFD simulations are particularly well suited to modeling plasmonic devices because they can handle dispersive materials, such as metals, without approximation and adaptive grid spacing for structures with disparate length scales. FDFD simulations are used to characterize and optimize silicon photodetectors with integrated resonant plasmonic structures. By properly optimizing the resonant structures, near-field absorption in the silicon can be enhanced up to 350%, a phenomenon known as extraordinary optical absorption (EOA). We experimentally investigate these devices by fabricating resonant plasmonic nano-structures in aluminum and gold films on bulk silicon and silicon-on-insulator devices. We find good agreement with theoretically predicted properties, and experimentally measure absorption enhancements up to 300%. Finally, we investigate silicon detector devices integrated with deep sub-wavelength plasmonic waveguides. Such devices are promising for optical interconnects directly integrated with modern microprocessors. -------------- next part -------------- An HTML attachment was scrubbed... URL: From sbasumal at stanford.edu Wed Feb 17 13:37:39 2010 From: sbasumal at stanford.edu (Shrestha Basu Mallick) Date: Wed, 17 Feb 2010 13:37:39 -0800 Subject: Missing Mask Message-ID: <353abe271002171337hb6cec99xd5991710e97271a4@mail.gmail.com> Hi, Has anyone seen a red Compugraphics mask which says ''Photonic Crystals" lying around? Or borrowed it from my bin. I really need it and can't find it. So it would be great if someone can tell me the whereabouts? Thanks -- Shrestha -------------- next part -------------- An HTML attachment was scrubbed... URL: From pruitt at stanford.edu Wed Feb 17 14:08:00 2010 From: pruitt at stanford.edu (Beth Pruitt) Date: Wed, 17 Feb 2010 14:08:00 -0800 Subject: lance kam seminar now, Micro- and Nano-scale Engineering of Cell Signaling Message-ID: Lance Kim Columbia University Clark S360 for Feb 17 (behind peet's) Micro- and Nano-scale Engineering of Cell Signaling Proper development and function of tissues relies on the ability of cells to respond to a complex and dynamic extracellular environment. We have developed new surface patterning and microfluidics techniques for controlling the presentation of multiple biomolecular cues at micro- to nano-scales, and demonstrated the impact of this biocomplexity on cellular function over a range of systems. At the largest scales of tens of micrometers, the spatial organization of proteins provides a new level of control over the layout of neuron networks. At smaller scales, we demonstrate a new aspects of spatial crosstalk between integrin and cadherin pathways in adenocarcinoma cells. At submicrometer scales, T cells are able to recognize different patterns of immune synapse signaling complexes. Together, these systems demonstrate the importance of spatially resolved cellular signaling, and provide new opportunities for incorporating diverse biophysical phenomena into current understanding of cellular physiology. -------------- next part -------------- An HTML attachment was scrubbed... URL: From elkallas at stanford.edu Wed Feb 17 18:20:58 2010 From: elkallas at stanford.edu (Pascale El Kallassi) Date: Wed, 17 Feb 2010 18:20:58 -0800 (PST) Subject: Silanisation In-Reply-To: <1327676950.1558321266459587675.JavaMail.root@zm04.stanford.edu> Message-ID: <703497465.1558601266459658876.JavaMail.root@zm04.stanford.edu> Hello, Does anyone have an experience with using silane coupling agents (e.g. OTS or APTMS or else) to render a surface hydrophobic? Thank you, Pascale El-Kallassi Postdoctoral Associate, Stanford University Electrical Engineering Dpt 330 Serra Mall, Paul G. Allen building X Palo Alto, CA 94305-4075 office (650)725-6970 fax (650)723-4659 e-mail: elkallas at stanford.edu - From mtang at stanford.edu Fri Feb 19 11:33:00 2010 From: mtang at stanford.edu (Mary Tang) Date: Fri, 19 Feb 2010 11:33:00 -0800 Subject: Power Glitch ~11 am Message-ID: <4B7EE76C.1050709@stanford.edu> Dear Labmembers -- There was a momentary power glitch around 11 am. It looks like only the furnaces were affected; Maurice, Ted, and Ray are working on them now. However, it is possible that we may have overlooked something. Please exercise a little more attention when using equipment today and report any issues on Coral. Thanks, Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From lanw at stanford.edu Sat Feb 20 09:33:13 2010 From: lanw at stanford.edu (lanw at stanford.edu) Date: Sat, 20 Feb 2010 09:33:13 -0800 Subject: PhD Oral Exam - Lan Wei, Monday, February 22, 2010; 10:00 am Message-ID: <00b101cab252$c7abade0$570309a0$@edu> Lan Wei Advisor: H.-S. Philip wong Time: 10am (Refreshment at 9:45am) Date: Feb 22 (Mon), 2010 Location: Paul Allen Building Auditorium (CIS-X Aud) Nanoelectronics: Technology Assessment and Projection at the Device, Circuit, and System Level Abstract: Nowadays, physical gate length can no longer be effectively scaled down and traditional boosters (e.g., strain, high-k/metal gate) are exhibiting diminishing returns on performance improvement. Continued progress in nanoelectronics necessitates a holistic view across the boundaries of device, circuit and system domains. The best devices are those that are optimized for the circuits and systems of the target application. Device design and engineering must aim at improvements at the circuit and system levels. At the same time, new applications in various areas, such as life-science, are enabled by emerging technology. In this talk, the design space is explored for future Si CMOS technology and for carbon nanotube field effect transistors, a promising technology in the post-Si era. Compact models for transport properties and capacitive components of different device structures have been developed to facilitate circuit-level analysis and system-level optimization. Possible ways of extending the technology roadmap are proposed. We propose scenarios of selective device structure scaling that will enable Si CMOS technology scaling for several generations beyond the currently perceived limits. Beyond Si CMOS scaling, carbon nanotube field effect transistors (CNFETs) are optimized and projected to achieve 5x chip-level speed up over PDSOI at 11 nm technology node for a high-performance four-core processor with 1.5M logic gates and 5MB SRAM per core. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- An embedded and charset-unspecified text was scrubbed... Name: ATT00046.txt URL: From mtang at stanford.edu Mon Feb 22 09:03:48 2010 From: mtang at stanford.edu (Mary Tang) Date: Mon, 22 Feb 2010 09:03:48 -0800 Subject: SNF Process Clinic today (Monday) 2-4 pm Message-ID: <4B82B8F4.8000901@stanford.edu> Greetings labmembers -- Just a reminder that there is a Process Clinic today (Monday) from 2-4 pm in the cubicle area outside of Maureen's office. Staff and senior labmembers will be on hand to answer questions and brainstorm ideas to address process issues. Bring your ideas, process questions, your process runsheets, device layouts, and whatever else. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edmyers at stanford.edu Tue Feb 23 13:30:54 2010 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 23 Feb 2010 13:30:54 -0800 Subject: Latest Results and Applications using XeF2 etching. Message-ID: <6.2.5.6.2.20100223132912.052b5ac8@stanford.edu> A reminder for tomorrow's XeF2 discussion >Xactix, the manufacture of our XeF2 etch system will be on campus >Wed. Feb. 24th. If you have any interest in the latest developments >in XeF2 etching please join us. > >Latest Research Results and Applications using XeF2 etching. >David Springer and Kyle Lebouitz, XACTIX, Inc. >Wednesday February 24, 10:00am to 12 noon: >Room: CIS101 > >This seminar will be divided into two parts. The first hour will be a >presentation by David Springer, President of XACTIX, Inc. on the latest >research results and examples of etching using XeF2 gas for multiple >applications. In the second hour we will be joined by Kyle Lebouitz, XACTIX's >CTO, for users to have a chance to discuss particular ideas, issues, problems >with their use of the XACTIX XeF2 etcher in the fab. > >XeF2 etches Si, Ge, Mo and SiGe very selectively to most semiconductor >materials. For example selectivities of over 1000:1 can be archived to films >such as SiO2, and SiN with zero attack on almost all other materials >including >Al, PZT, AlN, photoresist, etc. XeF2 can also be used to etch transitional >metals such as W, Ti, Ta, TiN and TaN, or conditions can be set to preserve >these materials when etching silicon. Areas where XeF2 etching can >show benefit >include releasing MEMS, increasing die strength after dicing, >removing barmier >layers for metal deposition, removing silicon for failure analysis, removing >silicon to expose the back of side of sensor circuits to enhance signal >strength as well as other non semiconductor applications which >require removing >transitional metals. > > >If you have any questions, please contact Ed Myers From fanpy839 at stanford.edu Tue Feb 23 18:54:02 2010 From: fanpy839 at stanford.edu (fanpy839) Date: Tue, 23 Feb 2010 18:54:02 -0800 Subject: About RT KOH etch Message-ID: <201002231854011181092@stanford.edu> Hi All, Does anybody have any experience or recipes for KOH (45%) etch of silicon at room temp (etch rate, oxide etch rate and etc.)? Or any alternative of slow silicon etching? I want to etch ~50nm of silicon. Thank you so much! Best, Pengyu 2010-02-23 fanpy839 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Wed Feb 24 10:08:01 2010 From: jwc at snf.stanford.edu (James W. Conway) Date: Wed, 24 Feb 2010 10:08:01 -0800 Subject: Announcement: Materials for UV-assisted Nanoimprint Lithography Ready for Industrial Use, Dr. Freimut Reuther, micro resist technology GmbH, 11 AM Friday 2-26-2010 ALLEN 101 Message-ID: <4B856B01.4050804@snf.stanford.edu> An HTML attachment was scrubbed... URL: From alsune at stanford.edu Wed Feb 24 21:58:34 2010 From: alsune at stanford.edu (Woo Shik Jung) Date: Wed, 24 Feb 2010 21:58:34 -0800 Subject: Question on decontamination Message-ID: <9f1fb3351002242158p42e5e468q66b99e9a5ef7adf0@mail.gmail.com> Dear labmembers, Is there a way to decontaminate a Si wafer to a 'clean' status after it has went through a semi-clean process? Of course the wafer has nothing but Si on it after the semiclean process. Thanks for all the help. Wooshik Jung -------------- next part -------------- An HTML attachment was scrubbed... URL: From saraswat at stanford.edu Thu Feb 25 15:15:58 2010 From: saraswat at stanford.edu (Krishna Saraswat) Date: Thu, 25 Feb 2010 15:15:58 -0800 Subject: EE 310 seminar - Pushkar Apte (SIA) Message-ID: <95C4EF3C-2971-4AD0-9645-DC4A1508E0F6@stanford.edu> Semiconductor Industry: Inflection and Innovation Pushkar Apte Vice President, Technology Semiconductor Industry Association Host: Prof. Krishna Saraswat Tuesday, March 2, 2010 4:15 - 5:05 pm Hewlett 102 Unprecedented global shifts in markets and technology are creating an inflection point for the semiconductor chip-driven high-tech ecosystem. Corporations in the developed economies were the leading users of high-tech products for a few decades, but the market has shifted rapidly over the last few years to the consumer and to emerging economies. These segments have a different set of needs and diverging perceptions of value, which makes the development of new products and solutions challenging. In parallel, we are reaching the limits of progression of the current workhorse technology. This has led to an escalation, at a never-before pace, in the cost for developing new products and in the number of technology options. This is true for each element of the supply-chain, including design, process technology, manufacturing, packaging, software and systems. These challenges are accentuated further by the global economic downturn. Challenge also brings opportunity, and future growth has many exciting drivers ? including nanotechnologies, new applications like energy and healthcare, and an increasing customer base in emerging economies. However, a fresh approach is needed to support the new vectors of research and innovation, together with creative networking and collaboration models to minimize cost. In this paper, we present a ?big-picture view? of the causes and development of this high-tech inflection, and outline possible actions for industry, academia and government to realize the opportunity created. Biography: Dr. Pushkar Apte is vice-president of Technology Programs, for the Semiconductor Industry Association. As such he has oversight responsibility for all of the technology activities of the SIA. This includes the SIA's International Technology Roadmap for Semiconductors. It also includes the collaborative efforts of the manufacturing and research consortia, (SEMATECH, SRC) set up by the SIA in the 1980s, and the Focus Center program set up by the SIA in 1998. His experience includes five years at Texas Instruments Incorporated, where he worked on cutting-edge research and technology development, and five years with McKinsey & Company, as their global semiconductor expert. He received his M.S. and Ph.D. degrees from Stanford University in Materials Science and Electrical Engineering, and his B.S. degree from the Indian Institute of Technology, Varanasi, India. From edmyers at stanford.edu Thu Feb 25 16:36:52 2010 From: edmyers at stanford.edu (Ed Myers) Date: Thu, 25 Feb 2010 16:36:52 -0800 Subject: Evacuation Event 2/25/10 Message-ID: <6.2.5.6.2.20100225153855.04dda948@stanford.edu> The SNF staff wants to thank everyone for their quick evacuation and their patience as the building was brought back on line. I believe all the process gases are back on line and the facility is fully functional. As with any event (or good engineering practice), monitor your process to make sure the systems are running. What happened today was a real event in a lab in the CISX building. During a major, biannual cleaning there was a flair up of the deposited material when it was exposed to the atmosphere. The flair up was small and short lived, but it produced enough smoke to trigger the smoke alarm in the room causing the building to be evacuated. Any time there is a smoke alarm the fire department is called in and they take responsibility for the subsequent chain of events. Today's evacuation was more lengthily, with many more departments responding because of health concerns raised by some of the materials used in the system. The fire department needed to make sure the room and building would be safe for our reentry. Thankfully no one was injured and ultimately the building was deemed safe. Regards, The SNF Staff on behalf of the Palo Alto Fire Department, Stanford Police Department, Stanford EH&S to name a few. From rthowe at stanford.edu Thu Feb 25 17:24:47 2010 From: rthowe at stanford.edu (Roger T. Howe) Date: Thu, 25 Feb 2010 17:24:47 -0800 Subject: SNF Director: John Shott Message-ID: <4B8722DF.6000706@stanford.edu> All -- It's my pleasure to announce that John Shott is the Director of the SNF, having been in that role since last September. The position was approved formally only a couple of days ago. Needless to say, the lab is in great hands -- I'm looking forward to working with him on the many opportunities and challenges facing us in the next few years. Roger Howe Faculty Director From audet at stanford.edu Thu Feb 25 20:35:21 2010 From: audet at stanford.edu (Ross Audet) Date: Thu, 25 Feb 2010 20:35:21 -0800 Subject: Stanford University Photonics Retreat 2010 -- register now! Message-ID: <002101cab69d$1b6a6a40$523f3ec0$@edu> SUPR 2010 is here! We've got an amazing line up of speakers and an exciting weekend planned [ Register now - Space is limited! ] ?ui=2&view=att&th=1269fd997f8d0428&attid=0.1&disp=attd&realattid=ii_1269fd99 7f8d0428&zw -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: supr2010.jpg Type: image/jpeg Size: 206837 bytes Desc: not available URL: From jwc at snf.stanford.edu Fri Feb 26 09:04:27 2010 From: jwc at snf.stanford.edu (James W. Conway) Date: Fri, 26 Feb 2010 09:04:27 -0800 Subject: Reminder: Materials for UV-assisted Nanoimprint Lithography Ready for Industrial Use, Dr. Freimut Reuther, micro resist technology GmbH, 11 AM Friday 2-26-2010 ALLEN 101 Message-ID: <4B87FF1B.1040808@snf.stanford.edu> An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Fri Feb 26 14:09:37 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 26 Feb 2010 14:09:37 -0800 Subject: spray coater Message-ID: <4B8846A1.6040900@stanford.edu> Hello all, I am happy to announce that there will be a presentation given on spray coater by Chad Brubaker, the head of process technology, from EVG. *on Wednesday in Allen 101 ( CIS 101) at 1 pm.* There will be time at the end of session for discussions and questions. cheers mahnaz From mahnaz at stanford.edu Fri Feb 26 15:51:20 2010 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Fri, 26 Feb 2010 15:51:20 -0800 Subject: spray coater In-Reply-To: <4B8846A1.6040900@stanford.edu> References: <4B8846A1.6040900@stanford.edu> Message-ID: <4B885E78.1080007@stanford.edu> The date is 3/3 mahnaz Mahnaz Mansourpour wrote: > > Hello all, > > I am happy to announce that there will be a presentation given on > spray coater by Chad Brubaker, the head of process technology, from > EVG. > > *on > Wednesday in Allen 101 ( CIS 101) at 1 pm.* > > There will be time at the end of session for discussions and questions. > > > cheers > mahnaz From koo1028 at stanford.edu Sun Feb 28 21:32:33 2010 From: koo1028 at stanford.edu (Kyung Hoae Koo) Date: Sun, 28 Feb 2010 21:32:33 -0800 (PST) Subject: Ti etching in drytek1 or 4 Message-ID: <243970671.4555631267421553300.JavaMail.root@zm08.stanford.edu> Hi labmembers Has anybody etched Ti in drytek1 or 4? In Wiki, it says drytek1 or 4 can be used for Ti etching. But it doesn't specify about gas and etch rate. My samples are gold contaminated so I can't use p5000. If there are any tool for Au contaminated Ti etching rather than drytek, please let me know. Thank you in advance. Kyunghoae