Question: Need to backside etch after about 3um LPCVD LTO deposition?
kyunglok at stanford.edu
Fri Jul 23 13:57:22 PDT 2010
I had deposited 3um LPCVD LTO on the silicon wafers.
The next several steps for the wafers include ASML lithography and STS DRIE.
In this case, should I etch out the oxide on the backside of Si wafers? Or
can I use ASML and STS DRIE without backside etching on sample wafers?
-------------- next part --------------
An HTML attachment was scrubbed...
More information about the labmembers