From jwpchen at stanford.edu  Sat May  1 11:34:58 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Sat, 01 May 2010 11:34:58 -0700
Subject: Seminar - Nanogenerator for Electric Clothing, Liwei Lin, Tue 5/4
 4-5pm 101X
Message-ID: <4BDC7452.7080207@stanford.edu>

Nanogenerator for Electric Clothing
Prof. Liwei Lin

Dept. of Mechanical Engineering, UC Berkeley

Tuesday, May 4, 4:00-5:00
Allen 101X Auditorium

Abstract:
A self-powering system that harvests its operating energy directly from 
the environment/body movement is an attractive proposition for sensing, 
personal electronics and security technologies. Mechanical energy 
scavengers by orderly electrospun piezoelectric nanofibers enable energy 
generation which could eventually lead to ?electric clothing.? This talk 
will introduce recent results on the demonstration of a single 
nanogenerator made of polyvinylidene fluoride (PVDF) via the in-situ 
stretching and poling electrospinning process. Results show that energy 
conversion efficiency of nanogenerator could be 10 times higher than 
large scale structures made of the same material. The capability of 
demonstrating electrospun nanofiber as possible power generator could 
have a profound impact in various application areas, including energy 
harvesting, strain sensing, and actuation sources.
Bio:
Professor Liwei Lin received his Ph.D. degree from the University of 
California, Berkeley, in 1993 and is now Chancellor?s Professor at the 
Mechanical Engineering Department and Co-Director at Berkeley Sensor and 
Actuator Center, an NSF/Industry/University research cooperative center. 
He served as the Vice-Chair for graduate study for the Mechanical 
Engineering department from 2006~2009. His research interests are in 
design, modeling and fabrication of micro/nano structures, sensors and 
actuators as well as mechanical issues in micro/nano systems including 
heat transfer, solid/fluid mechanics and dynamics. Dr. Lin is the 
recipient of the 1998 NSF CAREER Award for research in MEMS Packaging 
and the 1999 ASME Journal of Heat Transfer best paper award for his work 
on micro scale bubble formation. He led the effort in establishing the 
MEMS sub-division in ASME and served as the founding Chair of the 
executive committee for the MEMS division in ASME. He holds 13 U.S. 
patents in the area of MEMS and NEMS.



From edmyers at stanford.edu  Mon May  3 08:30:14 2010
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 03 May 2010 08:30:14 -0700
Subject: AppNano AFM Probes Presentation Reminder
Message-ID: <6.2.5.6.2.20100503082902.028e6cf8@stanford.edu>


>From: Ed Myers <edmyers at stanford.edu>
>Subject: AppNano AFM Probes Presentation
>
>Stanford Nanofabrication Facility and AFM Lab Member Community,
>
>AppNano AFM Probes Technology will be on campus Tuesday, May 4th to 
>give a presentation on their latest probe technology.  The 
>presentation will begin at 12 noon in room Paul Allan 101.  Please 
>refer to the attached flier for complete details.  The presentation 
>will last approximately one hour and will highlight several recent 
>AFM tip technologies and developments.
>
>A free lunch will be provided to registered guests.  To reserve your 
>pizza lunch and the option of free AFM tip samples please reply to 
>info at appnano.com with your name and contact information (email and 
>phone number) and the AFM probe part number.
>
>To request sample probes please visit www.appnano.com and suggest 
>the probe part number you are most interested in obtaining.
>You may select one part number out of the following series of probes :
>ACT, ACL, FORT, SHOCON, SICON and HYDRA.
>
>For additional information on the presentation please contact:
>mhuey at appnano.com
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From smeister at stanford.edu  Mon May  3 08:29:09 2010
From: smeister at stanford.edu (Stefan Meister)
Date: Mon, 03 May 2010 08:29:09 -0700
Subject: Ph.D. Oral Examination: Stefan Meister (May 12th, 10AM)
Message-ID: <4BDEEBC5.2020508@stanford.edu>

Title:
In situ TEM study of nanoscale phase-change memory cells

Advisor: Prof. Yi Cui
Time: Wednesday, May 12th at 10 AM (refreshments served at 9:45AM)
Location: CIS-X Auditorium

Abstract:
Phase-change memory (PCM) utilizes the large difference in resistivity 
between the crystalline and amorphous phases of chalcogenide materials 
to store information. Studies have shown excellent scalability, fast 
switching speeds and high endurance making this technology a promising 
candidate for future non-volatile memory. While industry is making 
steady progress towards implementing PCM, there are still many open 
questions concerning the operation of an actual device. For example, the 
size and shape of the amorphous region in a working device is largely 
unknown. Similarly, the critical threshold electric field required to 
switch to the conductive state, is not well understood. Finally, PCM 
devices often show large variability in their electrical behavior for 
unclear reasons. To address these questions, we have developed a 
technique to switch individual PCM cells inside a transmission electron 
microscope allowing us to directly correlate electrical behavior with 
structural changes. We demonstrate reversible switching of 
Germanium-Antimony-Telluride (Ge2Sb2Te5) lateral phase-change cells and 
show various degrees of amorphization which result in changes in 
electrical behavior. Specifically, the electrical behavior is influenced 
by the purity of the amorphous domain, which can vary from completely 
amorphous to an amorphous matrix with a high density of nanocrystals 
interspersed. We find that the makeup of the amorphous domain strongly 
depends on the geometry of the bridge and the applied pulse. We measured 
a threshold field of approximately 4 V/um, which is much smaller than 
what has been reported by other experiments (30-55 V/um). These insights 
can assist in the design of better lateral phase-change cells capable of 
reproducible switching with minimal resistance fluctuation in each state.

Since it is not clear which material will ultimately show the best 
properties for use in PCM and there is a need to make phase-change 
materials in the nanoscale for fundamental investigations, we developed 
the vapor-liquid-solid growth of GeTe phase-change nanowires (NWs). The 
NWs show a large resistance contrast upon switching. With the in situ 
TEM technique we discovered that the NWs can switch via a different 
mechanism that consists of opening and closing of voids giving rise to 
large differences in resistivity.

-- 
Stefan Meister
Ph.D. Candidate, Cui Group
Materials Science and Engineering
Stanford University
McCullough Bldg., Rm 209
476 Lomita Mall
Stanford, CA 94305
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From mtang at stanford.edu  Mon May  3 09:15:40 2010
From: mtang at stanford.edu (Mary Tang)
Date: Mon, 03 May 2010 09:15:40 -0700
Subject: Process Clinic, Today - 2-3:30
Message-ID: <4BDEF6AC.8080504@stanford.edu>

Greetings labmembers --

There is a Process Clinic today (Monday) from 2-3:30 
pm in the cubicle area outside of Maureen's office.

Experienced people will be on hand to answer questions and 
brainstorm ideas to address process issues.  Bring your ideas, process 
questions, your process runsheets, SpecMat request, device layouts, and 
whatever else.

(Senior labmembers are most welcome to help advise!)


Your SNF staff

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From edmyers at stanford.edu  Tue May  4 08:50:44 2010
From: edmyers at stanford.edu (Ed Myers)
Date: Tue, 04 May 2010 08:50:44 -0700
Subject: Today's AppNano AFM Probes Presentation
Message-ID: <6.2.5.6.2.20100504084901.05953998@stanford.edu>

Stanford Nanofabrication Facility and AFM Lab Member Community,

AppNano AFM Probes Technology will be on campus Tuesday, May 4th to 
give a presentation on their latest probe technology.  The 
presentation will begin at 12 noon in room Paul Allan 101.  Please 
refer to the attached flier for complete details.  The presentation 
will last approximately one hour and will highlight several recent 
AFM tip technologies and developments.

A free lunch will be provided to registered guests.  To reserve your 
pizza lunch and the option of free AFM tip samples please reply to 
info at appnano.com with your name and contact information (email and 
phone number) and the AFM probe part number.

To request sample probes please visit www.appnano.com and suggest the 
probe part number you are most interested in obtaining.
You may select one part number out of the following series of probes :
ACT, ACL, FORT, SHOCON, SICON and HYDRA.

For additional information on the presentation please contact:
mhuey at appnano.com
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From pruitt at stanford.edu  Wed May  5 13:11:49 2010
From: pruitt at stanford.edu (Beth Pruitt)
Date: Wed, 5 May 2010 13:11:49 -0700
Subject: seminar thursday 415pm, bill king
Message-ID: <p0623092cc807813ca196@[10.32.131.169]>

seminar tomorrow:

Thursday 4:15pm, Thornton 110

Prof. William King, UIUC M.E.
Thermomechanical Probes at the Nanometer Scale

The properties of materials depend upon temperature, and the ability 
to control temperature fields at the nanometer scale enables new 
capabilities for nanomechanical characterization and 
nano-manufacturing. This talk provides a broad overview on research 
into thermal and thermomechanical processing at the nanometer scale. 
The first part of the talk describes nanoscale probe tips with 
integrated thermal elements capable of measuring 
temperature-dependent physical, electrical, and chemical properties 
on the 10 nm scale. Such measurements enable quantitative material 
identification well below the diffraction limit of conventional 
spectroscopy. The second part of the talk describes nanomanufacturing 
with these probe tips. Such tips can form three-dimensional features 
in polymers, metals, and semiconductors with 10 nm resolution and 
include both mechanical forming and thermally-activated chemical 
reactions. The properties of these nanostructures will be described, 
as will the scale-up of these manufacturing techniques to 
conventional scales.

William P. King is Associate Professor and Willett Faculty Scholar in 
the Department of Mechanical Science and Engineering an affiliate of 
the Department of Materials Science and Engineering at the University 
of Illinois Urbana-Champaign. He received the Ph.D. (2002) degrees in 
mechanical engineering from Stanford University. He was worked at the 
IBM Zurich Research Laboratory and was formerly on the Faculty at 
Georgia Tech. Dr. King is the winner of the CAREER award from the 
National Science Foundation (2003), the PECASE award from the 
Department of Energy (2005), and the Young Investigator Award from 
the Office of Naval Research (2007). He was named Young Manufacturing 
Engineer by the Society of Manufacturing Engineers (2006). In 2006, 
Technology Review Magazine named him to the TR35-one of the people 
under the age of 35 whose innovations are likely to change the world. 
In 2007 his innovations were selected for an R&D 100 Award and a 
Micro/Nano 25 Award and in 2008 he won his second R&D 100 Award. In 
2009 he won the ASME Bergles-Rohsenow Award for Young Investigator in 
Heat Transfer. He has authored over 100 journal articles, is 
co-founder of two companies, and is a member of the Defense Sciences 
Research Council.


From jypeng at stanford.edu  Thu May  6 22:36:28 2010
From: jypeng at stanford.edu (Jammie Peng)
Date: Thu, 6 May 2010 22:36:28 -0700
Subject: MRS & IEEE Alumni Careers Panel: VIEWPOINTS - Insights from different 
	career stages in MSE and EE
Message-ID: <k2qb3b0f6121005062236z6b0f6191s76e908d944a2744a@mail.gmail.com>

 Stanford MRS and Stanford IEEE
presents
Alumni Careers Panel

*VIEWPOINTS*
Insights from different career stages in MSE and EE

Thursday, May 13, 2010
In McCullough Bldg. Rm. 115
Starts at 5:30pm
*
*
*Limited Seating!  RSVP below by 5/11 for complementary dinner!*

[image: wesling.jpg] [image: florando_jeff_150x193.jpg] [image:
JB_headshot.png]
 *Paul Wesling*, Emeritus Vice President of Publications, CPMT - 1966 BS
Electrical Engr, 1968 MS Materials Sci/Engr
*Jeff Florando*, Engineer, LLNL ? 1992 BS Ceramic Engr, 2002 PhD Materials
Sci/Engr
*Josh Baylor*, Design Engineer, Intersil ? 2006 BS Electrical Engr

If you have trouble viewing or submitting this form, you can fill it out
online:
http://sites.google.com/site/stanfordmrs/events/rsvp-for-seminar


 Name *
Email *
Major/Department *
Degree Program *

   - BS
   - MS
   - PhD
   - Post-Doc
   - Other:

Year in Program *

   - 1st year
   - 2nd year
   - 3rd year
   - 4th year
   - 5th year or more

National MRS Member *

   - Yes
   - No

Stanford MRS Mailing List *

   - I am part of the mailing list.
   - Please add me to the mailing list.
   - I do not want to join the mailing list.

Dietary Restrictions

   - Vegetarian
   - Other:

Question for the speaker or topic of discussion
  Powered by Google Docs <http://docs.google.com> Report
Abuse<http://spreadsheets.google.com/reportabuse?formkey=dGh2cFBXN0pqMTRhZnFfbDZ6dUtBbkE6MA&source=http%253A%252F%252Fspreadsheets.google.com%252Fviewform%253Fformkey%253DdGh2cFBXN0pqMTRhZnFfbDZ6dUtBbkE6MA>-
Terms
of Service <http://www.google.com/accounts/TOS> - Additional
Terms<http://www.google.com/google-d-s/terms.html>


*Jammie Peng*
Alumni Relations Director and E-Commerce Officer
*Stanford Materials Research Society*
Email jypeng at stanford.edu
mrs.stanford.edu
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From jwpchen at stanford.edu  Sat May  8 03:19:04 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Sat, 08 May 2010 03:19:04 -0700
Subject: seminar - Tues 5/11, 4-5pm, Allen 101X - Michel Maharbiz - Building
 interfaces from the synthetic to the organic: cyborg beetles, antibody zippers
 and other things
Message-ID: <4BE53A98.70408@stanford.edu>

Tuesday, May 11, 4:00-5:00
Allen 101X Auditorium

Building interfaces from the synthetic to the organic:
cyborg beetles, antibody zippers and other things

Prof. Michel Maharbiz
Dept. of EECS, UC Berkeley

Abstract:
The ongoing miniaturization of computation, sensing and communication 
coupled with advances in the understanding of biological process will 
fuel a push to engineer systems at the interface of the organic and the 
solid-state. In this talk, I?ll give a brief overview of efforts in my 
group in these directions, with an intent to delve deeply into two 
topics: so-called ?cyborg insects? (or the remote radio control of 
insect flight) and antibody zippers, a nanochemomechanical device 
recently developed in my group.

Bio:
Michel M. Maharbiz is an Associate Professor with the Department of 
Electrical Engineering and Computer Science at the University of 
California, Berkeley. He received his Ph.D. from the University of 
California at Berkeley for his work on microbioreactor systems under 
Prof. Roger T. Howe (EECS) and Prof. Jay D. Keasling (ChemE). His work 
let to the foundation of Microreactor Technologies, Inc. which was 
recently acquired by Pall Corporation. Dr. Maharbiz has been a GE 
Scholar and an Intel IMAP Fellow. Professor Maharbiz?s current research 
interests include building micro/nano interfaces to cells and organisms 
and exploring bio-derived fabrication methods. His group is also known 
for developing the world?s first remotely radio-controlled cyborg 
beetles; this was named one of the top ten emerging technologies of 2009 
by MIT?s Technology Review (TR10). Michel?s long-term goal is 
understanding developmental mechanisms as a way to engineer and 
fabricate machines.


From alexneu at stanford.edu  Fri May  7 19:49:59 2010
From: alexneu at stanford.edu (Alex Neuhausen)
Date: Fri, 7 May 2010 19:49:59 -0700
Subject: looking for clean anisole
Message-ID: <q2z588d90b11005071949ub1faf0ceje3708c32c9e611e5@mail.gmail.com>

Hi all,
I want to dilute some ZEP-520A ebeam resist with anisole. Could anyone spare
a few ml of particulate-free anisole?
Thanks,
Alex

Alex Neuhausen
PhD Candidate Electrical Engineering
Goldhaber-Gordon Lab
476 Lomita Mall
Stanford, CA 94305
Office: 650-725-2047
Cell: 650-776-5672
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From ytanster at gmail.com  Sun May  9 10:55:44 2010
From: ytanster at gmail.com (Mike Tan)
Date: Sun, 9 May 2010 10:55:44 -0700
Subject: tycom is stuck
Message-ID: <o2k249e3dc71005091055r35271201m1f758276bdac0747@mail.gmail.com>

Hi,

Does anyone know what to do when Tycom, the computer for interfacing the
furnaces is stuck?  I cannot load any programs into the system.  If anyone
fixes this later, please load polypump (poly directory) into tube 9.  Thank
you.


Mike
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From toecutter4ranger at gmail.com  Sun May  9 16:36:53 2010
From: toecutter4ranger at gmail.com (ToeCutter)
Date: Sun, 9 May 2010 16:36:53 -0700
Subject: looking for clean anisole
In-Reply-To: <q2z588d90b11005071949ub1faf0ceje3708c32c9e611e5@mail.gmail.com>
References: <q2z588d90b11005071949ub1faf0ceje3708c32c9e611e5@mail.gmail.com>
Message-ID: <5D0E2304-F99E-4D95-8543-E2D9773D4063@gmail.com>

The is a bottle from microchem, ' thinner A in the left hand yellow  
cabinet top shelf right behind the Ebeam resist
JWC

On May 7, 2010, at 7:49 PM, Alex Neuhausen <alexneu at stanford.edu> wrote:

> Hi all,
> I want to dilute some ZEP-520A ebeam resist with anisole. Could  
> anyone spare a few ml of particulate-free anisole?
> Thanks,
> Alex
>
> Alex Neuhausen
> PhD Candidate Electrical Engineering
> Goldhaber-Gordon Lab
> 476 Lomita Mall
> Stanford, CA 94305
> Office: 650-725-2047
> Cell: 650-776-5672


From jwpchen at stanford.edu  Mon May 10 01:17:35 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Mon, 10 May 2010 01:17:35 -0700
Subject: missing mask - HIPPI MK2
In-Reply-To: <4BE7B682.8040309@stanford.edu>
References: <4BE7B682.8040309@stanford.edu>
Message-ID: <4BE7C11F.2030605@stanford.edu>

A Good Person has found the mask. Thank you!

-Peter

On 5/10/2010 12:32 AM, Peter Chen wrote:
> Hello Labmembers,
>
> I have an ASML mask missing. It has been sitting in a user bin since a
> week ago, but now it has disappeared. The mask title is "HIPPI MK2".
>
> If you have seen it or have grabbed it by accident, could you email me
> asap? I would be very grateful.
>
> (If you did pick up the mask but wish to remain anonymous, you can also
> put it into storage bin F33 (karthikv) near the ASML.)
>
> Sorry for the mass email,
> -Peter



From jwpchen at stanford.edu  Mon May 10 00:32:18 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Mon, 10 May 2010 00:32:18 -0700
Subject: missing mask - HIPPI MK2
Message-ID: <4BE7B682.8040309@stanford.edu>

Hello Labmembers,

I have an ASML mask missing. It has been sitting in a user bin since a 
week ago, but now it has disappeared. The mask title is "HIPPI MK2".

If you have seen it or have grabbed it by accident, could you email me 
asap? I would be very grateful.

(If you did pick up the mask but wish to remain anonymous, you can also 
put it into storage bin F33 (karthikv) near the ASML.)

Sorry for the mass email,
-Peter


From smeister at stanford.edu  Mon May 10 09:00:28 2010
From: smeister at stanford.edu (Stefan Meister)
Date: Mon, 10 May 2010 09:00:28 -0700
Subject: Reminder: Ph.D. Oral Examination: Stefan Meister (May 12th, 10AM)
In-Reply-To: <4BDEEBC5.2020508@stanford.edu>
References: <4BDEEBC5.2020508@stanford.edu>
Message-ID: <4BE82D9C.6060707@stanford.edu>

Title:
In situ TEM study of nanoscale phase-change memory cells

Advisor: Prof. Yi Cui
Time: Wednesday, May 12th at 10 AM (refreshments served at 9:45AM)
Location: CIS-X Auditorium

Abstract:
Phase-change memory (PCM) utilizes the large difference in resistivity 
between the crystalline and amorphous phases of chalcogenide materials 
to store information. Studies have shown excellent scalability, fast 
switching speeds and high endurance making this technology a promising 
candidate for future non-volatile memory. While industry is making 
steady progress towards implementing PCM, there are still many open 
questions concerning the operation of an actual device. For example, the 
size and shape of the amorphous region in a working device is largely 
unknown. Similarly, the critical threshold electric field required to 
switch to the conductive state, is not well understood. Finally, PCM 
devices often show large variability in their electrical behavior for 
unclear reasons. To address these questions, we have developed a 
technique to switch individual PCM cells inside a transmission electron 
microscope allowing us to directly correlate electrical behavior with 
structural changes. We demonstrate reversible switching of 
Germanium-Antimony-Telluride (Ge2Sb2Te5) lateral phase-change cells and 
show various degrees of amorphization which result in changes in 
electrical behavior. Specifically, the electrical behavior is influenced 
by the purity of the amorphous domain, which can vary from completely 
amorphous to an amorphous matrix with a high density of nanocrystals 
interspersed. We find that the makeup of the amorphous domain strongly 
depends on the geometry of the bridge and the applied pulse. We measured 
a threshold field of approximately 4 V/um, which is much smaller than 
what has been reported by other experiments (30-55 V/um). These insights 
can assist in the design of better lateral phase-change cells capable of 
reproducible switching with minimal resistance fluctuation in each state.

Since it is not clear which material will ultimately show the best 
properties for use in PCM and there is a need to make phase-change 
materials in the nanoscale for fundamental investigations, we developed 
the vapor-liquid-solid growth of GeTe phase-change nanowires (NWs). The 
NWs show a large resistance contrast upon switching. With the in situ 
TEM technique we discovered that the NWs can switch via a different 
mechanism that consists of opening and closing of voids giving rise to 
large differences in resistivity.



From jypeng at stanford.edu  Tue May 11 00:08:45 2010
From: jypeng at stanford.edu (Jammie Peng)
Date: Tue, 11 May 2010 00:08:45 -0700
Subject: RSVP NOW! Alumni Careers Panel featuring Paul Wesling, Jeff Florendo, 
	and Josh Baylor
Message-ID: <AANLkTinFfcT7HjfVk_pRcxeNtvaG-ADXPcIgCpagL4DV@mail.gmail.com>

 Stanford MRS and Stanford IEEE
 presents
Alumni Careers Panel

*VIEWPOINTS*
Insights from different career stages in MSE and EE

Thursday, May 13, 2010
In McCullough Bldg. Rm. 115
Starts at 5:30pm
*
*
*Limited Seating!  RSVP below by 5/11 for complementary dinner from Pluto's!
*

 [image: Wesling formal 2.jpg] [image: florando_jeff_150x193.jpg] [image:
JB_headshot.jpg]
 *Paul Wesling*, Retired - 1966 BS Electrical Engr, 1968 MS Materials
Sci/Engr
*Jeff Florando*, Engineer, LLNL ? 1992 BS Ceramic Engr, 2002 PhD Materials
Sci/Engr
*Josh Baylor*, Design Engineer, Intersil ? 2006 BS Electrical Engr

 If you have trouble viewing or submitting this form, you can fill it out
online:
http://sites.google.com/site/stanfordmrs/events/rsvp-for-seminar


 Name *
 Email *
 Major/Department *
 Degree Program *

   - BS
   - MS
   - PhD
   - Post-Doc
   - Other:

 Year in Program *

   - 1st year
   - 2nd year
   - 3rd year
   - 4th year
   - 5th year or more

 National MRS Member *

   - Yes
   - No

Stanford MRS Mailing List *

   - I am part of the mailing list.
   -  Please add me to the mailing list.
   - I do not want to join the mailing list.

Dietary Restrictions

   - Vegetarian
   - Other:

Question for the speaker or topic of discussion
  Powered by Google Docs <http://docs.google.com> Report
Abuse<http://spreadsheets.google.com/reportabuse?formkey=dGh2cFBXN0pqMTRhZnFfbDZ6dUtBbkE6MA&source=http%253A%252F%252Fspreadsheets.google.com%252Fviewform%253Fformkey%253DdGh2cFBXN0pqMTRhZnFfbDZ6dUtBbkE6MA>-
Terms
of Service <http://www.google.com/accounts/TOS> - Additional
Terms<http://www.google.com/google-d-s/terms.html>


*Jammie Peng*
Alumni Relations Director and E-Commerce Officer
*Stanford Materials Research Society*
Email jypeng at stanford.edu
mrs.stanford.edu
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From gunhan at stanford.edu  Tue May 11 10:35:03 2010
From: gunhan at stanford.edu (gunhan at stanford.edu)
Date: Tue, 11 May 2010 10:35:03 -0700 (PDT)
Subject: =?utf-8?Q?Reminder:_Ph.D._Oral_Examination:_Me?=
 =?utf-8?Q?hmet_G=C3=BCnhan_Ertosun_(May_14th,_10AM)?=
In-Reply-To: <4BE82D9C.6060707@stanford.edu>
Message-ID: <1655384937.94341.1273599303483.JavaMail.root@zm03.stanford.edu>

Title: Novel Capacitorless Single-Transistor DRAM Technologies
Research Advisor: Prof. Krishna Saraswat
Date: Friday, May 14, 2010
Time: 10:00 am
Location: CIS-X Auditorium (Allen Building)

Abstract: 
	The Dynamic random access memory (DRAM)  industry has achieved miracles packing more and more memory bits onto ever smaller silicon die. But, the scaling of the conventional 1Transistor/1Capacitor (1T/1C) DRAM is becoming increasingly difficult, in particular due to the capacitor which has become harder to scale, as device geometries shrink. 

	Recently the capacitorless single-transistor (1T) DRAMs have attracted attention, due to its ability to achieve higher memory cell density and to solve the problems associated with the scaling of the capacitor. The information is stored as different charge levels at a capacitor in conventional 1T/1C DRAM, whereas the 1T DRAM employs floating body effects within the transistor to store the information without the need of the capacitor.

	The absence of the capacitor is advantageous in terms of scalability, process and fabrication complexity, and compatibility with the logic processing steps, device density, yield and cost. Due to all these advantages of the capacitorless DRAM, and to solve the scaling problem of conventional 1T/1C DRAM, this work is focused on creating novel single transistor DRAM technologies. 

	The first device that is studied is vertical double-gate (DG) capacitorless single-transistor DRAM (1T VR DRAM). This device has advantages of being vertical with a small footprint, it can be integrated on bulk Si and being a double-gate device allows better electrostatic control of the channel and higher intrinsic device retention. 

	The second device that is investigated is a novel DRAM device: capacitorless single-transistor quantum well DRAM (1T QW DRAM), which employs energy-band engineering approach within the body of the transistor in order to create a ?hole storage pocket? and ?carrier distribution control layer? which results in superior device characteristics in terms of scalability and memory sensing window.

	The third and the final device that is studied is also a novel DRAM device: capacitorless single-transistor charge trap DRAM (1T CT DRAM). The body of this device is engineered with the intentional charge traps so as to obtain a memory effect. This novel DRAM relies on the existence and absence of electrons within its body and uses a charge-trapping mechanism in its memory operation, unlike conventional 1T DRAMs that rely on holes and employ floating-body effects in its memory operation.


From jwpchen at stanford.edu  Tue May 11 13:45:07 2010
From: jwpchen at stanford.edu (Peter Chen)
Date: Tue, 11 May 2010 13:45:07 -0700
Subject: seminar - Tues 5/11, 4-5pm, Allen 101X - Michel Maharbiz - Building
 interfaces from the synthetic to the organic: cyborg beetles, antibody zippers
 and other things
In-Reply-To: <4BE53A98.70408@stanford.edu>
References: <4BE53A98.70408@stanford.edu>
Message-ID: <4BE9C1D3.4020900@stanford.edu>

Reminder of the exciting talk this afternoon... thanks

On 5/8/2010 3:19 AM, Peter Chen wrote:
> Tuesday, May 11, 4:00-5:00
> Allen 101X Auditorium
>
> Building interfaces from the synthetic to the organic:
> cyborg beetles, antibody zippers and other things
>
> Prof. Michel Maharbiz
> Dept. of EECS, UC Berkeley
>
> Abstract:
> The ongoing miniaturization of computation, sensing and communication
> coupled with advances in the understanding of biological process will
> fuel a push to engineer systems at the interface of the organic and the
> solid-state. In this talk, I?ll give a brief overview of efforts in my
> group in these directions, with an intent to delve deeply into two
> topics: so-called ?cyborg insects? (or the remote radio control of
> insect flight) and antibody zippers, a nanochemomechanical device
> recently developed in my group.
>
> Bio:
> Michel M. Maharbiz is an Associate Professor with the Department of
> Electrical Engineering and Computer Science at the University of
> California, Berkeley. He received his Ph.D. from the University of
> California at Berkeley for his work on microbioreactor systems under
> Prof. Roger T. Howe (EECS) and Prof. Jay D. Keasling (ChemE). His work
> let to the foundation of Microreactor Technologies, Inc. which was
> recently acquired by Pall Corporation. Dr. Maharbiz has been a GE
> Scholar and an Intel IMAP Fellow. Professor Maharbiz?s current research
> interests include building micro/nano interfaces to cells and organisms
> and exploring bio-derived fabrication methods. His group is also known
> for developing the world?s first remotely radio-controlled cyborg
> beetles; this was named one of the top ten emerging technologies of 2009
> by MIT?s Technology Review (TR10). Michel?s long-term goal is
> understanding developmental mechanisms as a way to engineer and
> fabricate machines.



From xinyubao at stanford.edu  Wed May 12 14:13:28 2010
From: xinyubao at stanford.edu (Xinyu Bao)
Date: Wed, 12 May 2010 14:13:28 -0700
Subject: Seminar: Towards High Performance III-V Semiconductor Nanowire FETs and Nanolasers (May17, 2-3pm, Allen 338X)
References: <201005121153000622405@stanford.edu>
Message-ID: <201005121413280158862@stanford.edu>

Towards High Performance III-V Semiconductor Nanowire FETs and Nanolasers
 
Prof. Xiuling Li
Department of Electrical and Computer Engineering
University of Illinois, Urbana-Champaign
http://mocvd.ece.illinois.edu
 
Monday, May 17, 2:00-3:00pm
Allen (CIS) 338X

This talk focuses on two types of III-V compound semiconductor nanotechnology building blocks and their potential applications in nanoelectronics, nanophotonics, and MEMS/NEMS: III-V semiconductor nanowires (NWs) and nanotubes (SNTs). 
 
Interest in semiconductor NWs have increased exponentially over the past several years because of their unique optical and electrical properties and the capability of producing high quality heterostructures with large lattice mismatch on the nanometer scale. Integration of semiconductor nanowire based devices has been problematic and usually requires the technologically disadvantageous (111) substrate for vertical nanowire devices or ex-situ assembly techniques to align planar nanowire devices. In the first part of the talk, I will present our discovery of a type of NWs that are twin-defect free, high carrier mobility, self-aligned, and transfer-printable. The planar nanowire growth and doping mechanism by MOCVD, as well as the output and transfer characteristics of a long channel MESFET using such GaAs nanowire as the channel material will be analyzed. 
 
SNT on the other hand is an emerging field that has only caught limited attention, yet possesses the potential to provide a wide range of functionalities. It is formed by a combination of top-down and bottom-up approach through the self-rolling of strained thin films. This allows feasible large area assembly and integration with existing semiconductor technology, while maintaining the control of the tube size and heterojunction formation in the tube wall. In the 2nd part of the talk, I will discuss the formation process, large area assembly, and optical characterization of InxGa1-xAs/GaAs micro and nanotubes with active light emitting media incorporated in the tube wall. Device prospects of SNTs for nanophotonics and MEMS will be explored. 

Biography: Xiuling Li received her Ph.D. degree from the University of California at Los Angeles. She joined the faculty of the University of Illinois in 2007, after working at a startup company for six years. She is currently an assistant professor in the Department of Electrical and Computer Engineering, and an affiliate faculty member of the Department of Materials Science and Engineering and the Beckman Institute. Her current research interests are in the area of nanostructured semiconductor materials and devices. She has won the NSF CAREER award (2008) and DARPA Young Faculty Award (2009). Her group?s work on the planar nanowires has won one of the best student paper awards at the 2008 IEEE LEOS annual meeting. The micro and nanotube work has been identified as an outstanding symposium paper presented at the 2008 MRS meeting.
 
Hosted by: Prof. H.-S. Philip Wong
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From shanswam at stanford.edu  Fri May 14 00:44:11 2010
From: shanswam at stanford.edu (Shankar Swaminathan)
Date: Fri, 14 May 2010 00:44:11 -0700
Subject: PhD Oral Examination: Shankar Swaminathan (Thursday, May 27th, 
	9:30AM)
Message-ID: <AANLkTilAWXBygBnYK12gb1M5Jz_7_lHDwJftFktqmKKo@mail.gmail.com>

*
Nanoscale atomic-layer-deposited high-k gate oxides on Germanium: *

*Interface engineering for highly-scaled MOS devices
*


 Shankar Swaminathan

Department of Materials Science and Engineering


Advisor: Dr. Paul C. McIntyre

Location: Bldg. 200 Rm. 002 (History Corner 200-002)

Date: Thursday, May 27, 2010

Time: 9:30 AM (refreshments served at 9:15 AM)


Germanium (Ge) has emerged as a promising candidate for surface channels in
highly-scaled field-effect-transistors (FETs), as performance and
reliability issues are likely to limit the use of conventional Si-based
complementary-metal-oxide-semiconductor transistors. Lack of a high quality
and stable thermal oxide of germanium has prompted interest in the use of
high-*k* (high dielectric-constant) gate dielectrics on Ge channels. An
interface layer (IL) between the high-*k* film and the Ge substrate appears
to be necessary to avoid large defect densities characteristic of
atomically-abrupt high-k (ZrO2 or HfO2)/Ge interfaces. Atomic layer
deposition (ALD) is a useful high-*k *metal oxide film growth technique due
to the precise nature of thickness control and uniformity of thickness for
very thin films.  The use of ALD to synthesize deposited ILs interposed
between the Ge channel and an overlying high-*k* layer has not been studied
extensively. In this context, we present three highlights from our work:

First, we show that a pre-ALD surface functionalization by oxidant dosing
improves the electrical characteristics of Pt/4nm ALD-Al2O3/p-Ge devices, as
opposed to a conventional precursor-first ALD process. *In situ* x-ray
photoelectron spectroscopy in the ALD ambient reveals the influence of
hydroxyl (-OH) termination of the Ge surface in passivating dangling bonds
that lead to fast trapping. The evolution of Ge-O bonding states during this
pre-pulsing process is correlated with the observed improvements in
hysteresis, frequency dispersion of the gate capacitance, and the
passivation of fast (band-edge) and slow (midgap) interface states.

Second, we present findings on the effects of scaling the physical thickness
of the ALD-Al2O3 (down to 1 nm) on important electrical parameters such as
interface state density (Dit), capacitance density, fixed charge and leakage
current density. The ultrathin-ALD-Al2O3 / Ge interface shows no apparent
interfacial suboxide (GeOx) while retaining a low Dit of 2x1011 cm-2 eV-1,
indicating the potential of ALD-Al2O3 as an interface passivation layer.

Aggressive gate capacitance scaling necessitates the use of so-called
?higher-k? dielectrics such as TiO2 (k > 25). However, the conduction band
offset (CBO) of the TiO2/Ge interface is very low (~ 0.2eV), resulting in
high gate leakage. We demonstrate that ultrathin (~ 1 nm) Al2O3 ILs, owing
to their large bandgap (~ 6.2 eV), enhance the CBO at the TiO2/Ge interface,
and reduce the gate leakage by 4 to 6 orders of magnitude at flatband. The
Pt-gated bilayer devices exhibit excellent C-V characteristics down to a
capacitance-derived EOT of 1.2 nm. The permittivity of the
amorphous/nanocrystalline ALD-TiO2 films was in the range of 32-35. Forming
gas annealing is beneficial in lowering the interface state density via
formation of monolayer-thickness interfacial GeO2. Post-annealed devices
exhibited a minimum Dit ~ 3x1011 cm-2 eV-1 near midgap. Finally, we show
that thermally activated electron transport into shallow defect states in
the TiO2 (~0.25eV below the CB edge) near the TiO2/Al2O3 interface appears
to be responsible for a temperature-dependent dispersion of the accumulation
capacitance density. The passivation of these defects is important to fully
realize the potential of novel bilayer high-*k* gate stacks on germanium
channels.


-- 
Shankar Swaminathan
Stanford Graduate Fellow '05
McIntyre Research Group
203P, McCullough (G-LAM)
Stanford University, CA
Ph: 650 796 6929
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From dslin824 at stanford.edu  Sun May 16 12:24:41 2010
From: dslin824 at stanford.edu (Elvis Der-Song Lin)
Date: Sun, 16 May 2010 12:24:41 -0700
Subject: Need borrow LOR 10B for lift-off
Message-ID: <AANLkTil7Ukw0F8Bb6LEHXh-La2L5_lViCGg8tq1mtLMY@mail.gmail.com>

Dear all,
I was just wondering if anyone could kindly spare some LOR 10B.
I am also ordering a new bottle so that you could share it back if you like.
Thanks in advance,

-- 
------------------------------------------
Elvis Der-Song Lin
Stanford University
Ginzton Lab.
Khuri-Yakub's Group
Stanford CA, 94305
e-mail: elvislin at stanford.edu
------------------------------------------


From hongyuc at stanford.edu  Sun May 16 15:08:04 2010
From: hongyuc at stanford.edu (Henry Hong-Yu Chen)
Date: Sun, 16 May 2010 15:08:04 -0700
Subject: Calibration of MKS Vacuum Gauges(Model: 116A)
In-Reply-To: <AANLkTildqAh5tEhyccGNuwFb9TQcpQkubp88CUHO1y6X@mail.gmail.com>
References: <AANLkTildqAh5tEhyccGNuwFb9TQcpQkubp88CUHO1y6X@mail.gmail.com>
Message-ID: <AANLkTindw8tRWyDt2y8QpKIkmStLRJ0OXbU9rpFmPSK7@mail.gmail.com>

Hi All,

I am wondering if anyone has a user manual in your group or knows to
calibrate MKS Vacuum Gauge. The model in our lab is TYPE 116A
baratron, which is probably the first generation product of this
manufacturer, MKS. It is too old to find calibration information
online. If you happen to know how to calibrate it, please let me know.
Your help is really appreciated.

Best,
Henry


From mtang at stanford.edu  Sun May 16 16:56:48 2010
From: mtang at stanford.edu (Mary Tang)
Date: Sun, 16 May 2010 16:56:48 -0700
Subject: Process Clinic, Monday, 2-3:30
Message-ID: <4BF08640.6040408@stanford.edu>

Greetings labmembers --


Just a reminder that there is a Process Clinic today (Monday) from 2-3:30
pm in the cubicle area outside of Maureen's office.

Staff and senior labmembers will be on hand to answer questions and brainstorm ideas
to address process issues.  Bring your ideas, process questions, your
process runsheets, SpecMat request, device layouts, and whatever else.


Your SNF staff



-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From hongyuc at stanford.edu  Sun May 16 15:06:19 2010
From: hongyuc at stanford.edu (Henry Hong-Yu Chen)
Date: Sun, 16 May 2010 15:06:19 -0700
Subject: Calibration of MKS Vacuum Gauges(Model: 116A)
Message-ID: <AANLkTildqAh5tEhyccGNuwFb9TQcpQkubp88CUHO1y6X@mail.gmail.com>

Hi All,

I am wondering if anyone has a user manual in your group or knows to
calibrate MKS Vacuum Gauge. The model in our lab is TYPE 116A
baratron, which is probably the first generation product of this
manufacturer, MKS. It is too old to find calibration information
online. If you happen to know how to calibrate it, please let me know.
Your help is really appreciated.

Best,
Henry


From mbaran at stanford.edu  Mon May 17 14:49:41 2010
From: mbaran at stanford.edu (Maureen Baran)
Date: Mon, 17 May 2010 14:49:41 -0700
Subject: Found Stanford Postal Office Receipt
Message-ID: <006601caf60a$db076040$911620c0$@edu>

Dear All,

 

Did someone just drop a Stanford Postal Office Receipt?  Also found was a
United States Postal Service Delivery Confirmation ticket.  If you need
these two items please come to my cubicle #41.  I am right by the doors that
face Applied Physic Building.

 

Maureen

 

Maureen Baran

Stanford Nanofabrication Facility

Lab Services Administrator

mbaran at stanford.edu

650-725-3664

 

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From mtang at stanford.edu  Wed May 19 00:14:56 2010
From: mtang at stanford.edu (Mary Tang)
Date: Wed, 19 May 2010 00:14:56 -0700
Subject: Odor in Litho
Message-ID: <4BF38FF0.1020507@stanford.edu>

At 11:30 pm, two labmembers report a strange odor in the litho area 
described varyingly as chlorine-like and skunk-like. Please avoid or 
limit your time in the area until the odor dissipates.

Thanks,

Mary


From tberg at stanford.edu  Thu May 20 07:17:27 2010
From: tberg at stanford.edu (Ted Berg)
Date: Thu, 20 May 2010 07:17:27 -0700
Subject: RTAGAAS Going down
Message-ID: <4BF54477.6010006@stanford.edu>

Hello All,
      As part of the lab capability upgrade the remaining 210 RTA 
-RTAGAAS will be going down on Tuesday June 1 to be replaced with 2each 
AW610 rtas we are hoping downtime will be as short as possible but 1 to 
2 weeks is likely. Please plan in advance.
     During this time STSDEP will also be down for a couple of days for 
gas line tie ins . Thank you in advance for your understanding as the 
lab grows. ted


From nklejwa at stanford.edu  Fri May 21 12:32:31 2010
From: nklejwa at stanford.edu (Nathan K)
Date: Fri, 21 May 2010 12:32:31 -0700
Subject: Flapping Nano Air Vehicles - Dr. Anita Flynn - Tuesday May 25 4-5pm - 
	Allen/CIS-101X
Message-ID: <AANLkTintuwR1B8pGh1tt5EcH0DyyaRcovilTCHyYJ_2R@mail.gmail.com>

Flapping Nano Air Vehicles
Tuesday, May 25, 2010
4:00-5:00 Allen 101X

Anita Flynn
MicroPropulsion Corp.
Berkeley, California

This talk will present Team MicroPropulsion?s results and lessons learned
from the DARPA Nano Air Vehicle program, a challenge focused on designing a
complete system for delivering a 2 g drop-off payload to a 1 km
line-of-sight target (and return) by an aircraft capable of hovering for one
minute at the target while communicating to a basestation, and yet able to
fit in a 7.5 cm dia. x 7.5 cm long cylinder.

The Flapping Nano Air Vehicle final report is available freely online at:
http://www.micropropulsion.com/pubs/publications.htm

After receiving her Ph.D. in EECS from MIT in 1995, Anita Flynn spent two
years as a post-doctoral researcher and
lecturer in UC Berkeley?s EECS Department. Since then, she has variously
consulted, worked in start-ups, started
MicroPropulsion, collaborated with UC Berkeley?s Smart Dust Group, and spent
a year in UC Berkeley?s
Mechanical Engineering Department as a visiting professor teaching smart
product design. From Oct06 to Mar08,
MicroPropusion was one of four prime contractors in the DARPA Nano Air
Vehicle program.
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From grahamab at stanford.edu  Sat May 22 17:10:55 2010
From: grahamab at stanford.edu (Andrew Blake Graham)
Date: Sat, 22 May 2010 17:10:55 -0700 (PDT)
Subject: PhD Oral Examination :: Andrew Graham (Thursday, May 27th, 9:00am)
Message-ID: <1686804333.7951.1274573455837.JavaMail.root@zm06.stanford.edu>



Title: Methods for the wafer-scale encapsulation of MEMS 
Advisor: Thomas W. Kenny 
Date: Thursday, May 27th, 2010 
Time: 9:00am 
Location: Allen Building/CIS-X Auditorium 

Abstract: 


The packaging of microelectromechanical systems (MEMS) is one of the most important design considerations in taking a product from a research environment to a commercial application. ?It must not only provide a suitably clean and stable environment for the device, but it should also withstand any harsh post-processing steps (such as wafer dicing and wire bonding) needed to integrate the device into its final system. ?As a result, the cost of packaging is typically a large portion of the overall cost of any commercial MEMS product.?? 

Addressing these needs for electrostatic silicon MEMS, we have developed multiple wafer-scale encapsulation techniques that allow for a wide range of devices to be fabricated in a single fabrication process. ?Expanding on the thin film, 'epi-seal' encapsulation technique developed jointly by Stanford University and Bosch, a packaging method was developed that makes use of a thick sacrificial oxide deposition and planarization to allow for large lateral deflection structures side-by-side with proven narrow gap devices.?? 

In an effort to further increase the capabilities of wafer-scale encapsulation, a process combining fusion wafer bonding and epitaxial reactor sealing was also developed. ?Unlike many packaging techniques using wafer bonding, the overall package size is only slightly bigger than the device itself and results in a stable, clean environment for the device. ?The final encapsulated part consists of a single crystal silicon structure free of native oxide inside a single crystal silicon cap layer. ?In addition, this encapsulation can support numerous process variations, such as oxide-coated composite device structures and the first MEMS devices packaged at the wafer scale using silicon migration. ? 
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From dslin824 at stanford.edu  Sat May 22 22:14:14 2010
From: dslin824 at stanford.edu (Elvis Der-Song Lin)
Date: Sat, 22 May 2010 22:14:14 -0700
Subject: PhD Oral Defense : Der-Song (Elvis) Lin, Thursday, May 27, 2010; 1pm, 
	Packard 202
Message-ID: <AANLkTimPa7bIDYK5Q7L5FYI8ijxPgf2mfQ1tllRJBf-j@mail.gmail.com>

 Department of Mechanical Engineering
University PhD Dissertation Defense


*Interface Engineering of Capacitive Micromachined Ultrasonic Transducers
(CMUTs) for Medical Applications*

Der-Song (Elvis) Lin
Research Advisor: Professor B. T. Khuri-Yakub

27 May 2010 @1:00 p.m.
in
Packard Building, Room 202
(Refreshments at 12:45 p.m.)
*
*
Abstract

      Over the last decade, capacitive micromachined ultrasonic transducers
(CMUTs) have been widely studied in academia and industry. CMUTs provide
many benefits over traditional piezoelectric transducers including
improvement in performance through wide bandwidth, and ease of electronics
integration, with the potential to batch fabricate very large 2D arrays with
low-cost and high-yield.  Though many aspects of CMUT technology have been
studied over the years, packaging the CMUT into a fully practical system has
not been thoroughly explored.  Two important interfaces of packaging that
this defense explores are the interface between CMUTs and patients, i.e.,
device encapsulation, and the interface between CMUTs and electronics, i.e.,
full electronic integration of large scale 2D arrays.

      In the first part of the talk I investigate the requirements for the
CMUT encapsulation. For medical usage, encapsulation is needed to
electrically insulate the device, mechanically protect the device, and
maintain transducer performance, especially the access of the ultrasound
energy.  While many other MEMS devices can be protected by hermetic sealing,
CMUTs require mechanical interaction to a fluid, which makes fulfilling the
previous criteria very challenging. The proposed solution is to use a
viscoelastic material with the glass-transition-temperature lower than the
room-temperature, such as Polydimethylsiloxane (PDMS), to preserve the CMUT
static and dynamic performance. Experimental implementation of the
encapsulated imaging CMUT arrays shows the device performance was
maintained; 95 % of efficiency, 85% of the maximum output pressure, and 91%
of the fractional bandwidth (FBW) can be preserved. A viscoelastic finite
element model was also developed and shows the performance effects of the
coating can be accurately predicted. Three designs, providing lens focusing,
acoustic crosstalk suppression and flexible substrate, using PDMS layer were
also demonstrated.

      The second part of the talk presents contributions towards the
electronic integration and packaging of large-area 2-D arrays. A very large
2D array is appealing for it can enable advanced novel imaging applications,
such as a reconfigurable array, and a compression plate for breast cancer
screening. With these goals in mind, I developed the first large-scale fully
populated and integrated 2D CMUTs array with 32 by 192 elements. In this
study, I demonstrate a flexible and reliable integration approach by
successfully combining a simple UBM preparation technique and a
CMUTs-interposer-ASICs sandwich design. The results show high shear strength
of the UBM (26.5 g), 100% yield of the interconnections, and excellent CMUT
resonance uniformity (s = 0.02 MHz). As demonstrated, this allows for a
large-scale assembly of a tile-able array by using an interposer.

      Interface engineering is crucial towards the development of CMUTs into
a practical ultrasound system.  With the advances in encapsulation technique
with a viscoelastic polymer and the combination of the UBM technique to the
TSV fabrication for electronics integration, a fully integrated CMUT system
can be realized.

-- 
------------------------------------------
Elvis Der-Song Lin
Stanford University
Ginzton Lab.
Khuri-Yakub's Group
Stanford CA, 94305
e-mail: elvislin at stanford.edu
------------------------------------------
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From shanswam at stanford.edu  Mon May 24 13:14:43 2010
From: shanswam at stanford.edu (Shankar Swaminathan)
Date: Mon, 24 May 2010 13:14:43 -0700
Subject: Reminder: PhD Oral Examination: Shankar Swaminathan (Thursday, May 
	27th, 9:30AM)
Message-ID: <AANLkTilIHYoaz4_0L9mxXI9Q50DI0jW5QOcc2rMGxwKp@mail.gmail.com>

*
                                              Nanoscale
atomic-layer-deposited high-k gate oxides on Germanium:*

*Interface engineering for highly-scaled MOS devices
*


 Shankar Swaminathan

Department of Materials Science and Engineering


Advisor: Dr. Paul C. McIntyre

Location: Bldg. 200 Rm. 002 (History Corner 200-002)

Date: Thursday, May 27, 2010

Time: 9:30 AM (refreshments served at 9:15 AM)


Germanium (Ge) has emerged as a promising candidate for surface channels in
highly-scaled field-effect-transistors (FETs), as performance and
reliability issues are likely to limit the use of conventional Si-based
complementary-metal-oxide-semiconductor transistors. Lack of a high quality
and stable thermal oxide of germanium has prompted interest in the use of
high-*k* (high dielectric-constant) gate dielectrics on Ge channels. An
interface layer (IL) between the high-*k* film and the Ge substrate appears
to be necessary to avoid large defect densities characteristic of
atomically-abrupt high-k (ZrO2 or HfO2)/Ge interfaces. Atomic layer
deposition (ALD) is a useful high-*k *metal oxide film growth technique due
to the precise nature of thickness control and uniformity of thickness for
very thin films.  The use of ALD to synthesize deposited ILs interposed
between the Ge channel and an overlying high-*k* layer has not been studied
extensively. In this context, we present three highlights from our work:

First, we show that a pre-ALD surface functionalization by oxidant dosing
improves the electrical characteristics of Pt/4nm ALD-Al2O3/p-Ge devices, as
opposed to a conventional precursor-first ALD process. *In situ* x-ray
photoelectron spectroscopy in the ALD ambient reveals the influence of
hydroxyl (-OH) termination of the Ge surface in passivating dangling bonds
that lead to fast trapping. The evolution of Ge-O bonding states during this
pre-pulsing process is correlated with the observed improvements in
hysteresis, frequency dispersion of the gate capacitance, and the
passivation of fast (band-edge) and slow (midgap) interface states.

Second, we present findings on the effects of scaling the physical thickness
of the ALD-Al2O3 (down to 1 nm) on important electrical parameters such as
interface state density (Dit), capacitance density, fixed charge and leakage
current density. The ultrathin-ALD-Al2O3 / Ge interface shows no apparent
interfacial suboxide (GeOx) while retaining a low Dit of 2x1011 cm-2 eV-1,
indicating the potential of ALD-Al2O3 as an interface passivation layer.

Aggressive gate capacitance scaling necessitates the use of so-called
?higher-k? dielectrics such as TiO2 (k > 25). However, the conduction band
offset (CBO) of the TiO2/Ge interface is very low (~ 0.2eV), resulting in
high gate leakage. We demonstrate that ultrathin (~ 1 nm) Al2O3 ILs, owing
to their large bandgap (~ 6.6eV), enhance the CBO at the TiO2/Ge interface,
and reduce the gate leakage by 4 to 6 orders of magnitude at flatband. The
Pt-gated bilayer devices exhibit excellent C-V characteristics down to a
capacitance-derived EOT of 1.2 nm. The permittivity of the
amorphous/nanocrystalline ALD-TiO2 films was in the range of 32-35. Forming
gas annealing is beneficial in lowering the interface state density via
formation of monolayer-thickness interfacial GeO2. Post-annealed devices
exhibited a minimum Dit ~ 3x1011 cm-2 eV-1 near midgap. Finally, we show
that thermally activated electron transport into shallow defect states in
the TiO2 (~0.25eV below the CB edge) near the TiO2/Al2O3 interface appears
to be responsible for a temperature-dependent dispersion of the accumulation
capacitance density. The passivation of these defects is important to fully
realize the potential of novel bilayer high-*k*gate stacks on germanium
channels.
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From dsoto at stanford.edu  Mon May 24 18:03:44 2010
From: dsoto at stanford.edu (Daniel Soto)
Date: Mon, 24 May 2010 18:03:44 -0700
Subject: Daniel Soto PhD Dissertation Defense
References: <AD745E39-7A0C-4BF0-85BC-AE7C6B4BD650@stanford.edu>
Message-ID: <DE37A4AF-B147-4962-97FE-49A88454016A@stanford.edu>



Department of Applied Physics
University PhD Dissertation Defense


Force Space Studies of Elastomeric Anisotropic Fibrillar Adhesives


Daniel Ruben Soto

Research Advisor: Professor Thomas Kenny

26 May 2010 @ 3:30 P.M.

Allen Building (Formerly CIS-X), Room 101



ABSTRACT
Research into the climbing ability of the gecko lizard revealed an adhesive system fundamentally different from existing synthetic adhesives.  Instead of using a soft material, the gecko uses a complex system of hairs of beta-keratin, a material that is not tacky.  This unique architecture affords the adhesive characteristics that make it well suited for climbing.

Borrowing themes from the gecko, we developed a synthetic adhesive possessing similar properties using molded arrays of micron-scale silicone pillars.  These arrays demonstrate the gecko property of frictional adhesion where increased shear stress at the interface leads to increased normal load capacity.  To distinguish between intrinsic and emergent behavior, we also isolated single pillars to test on a dual-axis force-sensing cantilever capable of micro-Newton resolution.  We observed that gecko-like properties were observed for tapered pillars but not for pillars of uniform cross-section.

Most synthetic adhesive architectures use a uniform cross-section beam but these results suggest such a design does not capture gecko-like behavior.  These results point to ways to optimize the type of adhesion demonstrated by the synthetic dry adhesives and to create adhesives tailored for the application.


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From mtang at stanford.edu  Tue May 25 08:03:39 2010
From: mtang at stanford.edu (Mary Tang)
Date: Tue, 25 May 2010 08:03:39 -0700
Subject: Facilities work this morning
Message-ID: <4BFBE6CB.20604@stanford.edu>

Dear labmembers --

The Facilities group will be flushing the process chilled water system 
this morning.  We don't anticipate problems, but as water pressure may 
momentarily increase, there is a possibility that some equipment 
subsystems may error.  Maintenance are aware and reservations have been 
made on the sensitive equipment.  If you encounter any problems this 
morning, please let staff know.  Things should be flushed by 10 am.

Thanks for your attention --

Your SNF Staff

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From audet at stanford.edu  Tue May 25 10:08:38 2010
From: audet at stanford.edu (Ross Audet)
Date: Tue, 25 May 2010 10:08:38 -0700
Subject: Special seminar - Prof. Alan Willner, USC -- Thurs, May 27, 4:15 PM, AP200
Message-ID: <002101cafc2c$eb365ed0$c1a31c70$@stanford.edu>

 

Special Seminar

Presented by the Stanford Optical Society

 

Towards Robust and Reconfigurable Optical Communication Systems

 

Alan Willner

Professor, Ming Hsieh Dept. of Electrical Engineering,

University of Southern California

 

Thursday, May 27, 4:15 PM, Applied Physics 200

Refreshments at 4:00 PM

 

Optical communications has enjoyed dramatic growth in terms of technical
achievement as well as commercial implementation. This presentation will
highlight three main topics.  Firstly, a broad perspective will be given on
some of the technical trends in optical communication systems.  Secondly, I
will describe technical issues related to stable, robust optical networking,
including: performance monitoring to determine the cause of any data
degradations, non-static channel-degrading effects, spectrally efficient
modulation formats, targeted optical and electrical signal processing, and
photonic switching.  Finally, I will discuss adding tunability, flexibility
and reconfigurability to different aspects of the base optical technologies.

 

About the speaker:

Alan Willner received the Ph.D. from Columbia University, has worked at AT&T
Bell Labs and Bellcore, and is Professor of EE at USC. He has received the
NSF Presidential Faculty Fellows Award from the White House, Packard
Foundation Fellowship, NSF National Young Investigator Award, Fulbright
Foundation Senior Scholars Award, OSA Leadership Award, IEEE Photonics
Society Distinguished Traveling Lecturer Award, USC University-Wide Award
for Excellence in Teaching, IEEE Fellow, OSA Fellow, Eddy Paper Award from
Pennwell Publications for the Best Contributed Technical Article, and
Armstrong Foundation Award. Prof. Willner has been President of IEEE
Photonics Society, Editor-in-Chief of IEEE/OSA Journal of Lightwave
Technology, Editor-in-Chief of Optics Letters, Editor-in-Chief of IEEE
Journal of Selected Topics in Quantum Electronics, Co-Chair of OSA Science &
Engineering Council, General Co-Chair of CLEO, General Chair of LEOS Annual
Meeting, Program Co-Chair of OSA Annual Meeting, and Chair of IEEE TAB
Ethics Committee. He has 800 publications, including 25 patents and 2 books.

 

 

 

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From rthowe at stanford.edu  Tue May 25 15:52:46 2010
From: rthowe at stanford.edu (Roger T. Howe)
Date: Tue, 25 May 2010 15:52:46 -0700
Subject: Anita Flynn seminar:  flying nanorobots, 4 pm Allen 101X!!
Message-ID: <4BFC54BE.20800@stanford.edu>

All,

Neat seminar -- one of the nano air vehicles arrived via fedex this 
morning and you'll be able to see it.

Roger

Flapping Nano Air Vehicles
Anita Flynn
MicroPropulsion Corp.
Berkeley, California
Abstract

This talk will present Team MicroPropulsion?s results and lessons 
learned from the DARPA Nano Air
Vehicle program, a challenge focused on designing a complete system for 
delivering a 2 g drop-off
payload to a 1 km line-of-sight target (and return) by an aircraft 
capable of hovering for one minute at the
target while communicating to a basestation, and yet able to fit in a 
7.5 cm dia. x 7.5 cm long cylinder.
MicroPropulsion led a team of 3 universities, 7 small companies, 2 
divisions of a government laboratory
and 3 independent consultants. Our team proposed a flapping solution, 
for the purpose of natural stealth.
This talk will delve into the repurcussions of that choice, the 
scientific inquiries made in its pursuit, and
all the engineering tradeoffs involving guidance, electronics, power, 
motors and control.
The Flapping Nano Air Vehicle final report is available freely online at:
http://www.micropropulsion.com/pubs/publications.htm


From bahlg at stanford.edu  Wed May 26 09:39:20 2010
From: bahlg at stanford.edu (Gaurav Bahl)
Date: Wed, 26 May 2010 09:39:20 -0700
Subject: PhD Orals - Gaurav Bahl, Thursday, May 27, 2010; 4:30pm
Message-ID: <4BFD4EB8.8010107@stanford.edu>

Stanford University PhD Oral Examination - Gaurav Bahl
Department of Electrical Engineering

Title: Charge and Frequency Drift Control in Resonant Electrostatic MEMS

Research Advisor:  Prof. Thomas W. Kenny
Date:  Thursday, May 27, 2010
Time:  4:30 pm
Location:  CIS-X 101 (Auditorium)


Abstract :

Dielectrics play an important role as structural and electronic 
materials in many kinds of micro/nanoscale systems (such as CMOS and 
MEMS). However, it is also well known that dielectrics are susceptible 
to various charging phenomena. Charge build-up and charge motion can 
vary floating voltages, discharge electrodes, or screen electrode 
potentials, affecting the overall properties of these devices. In MEMS, 
these effects can include unpredictable actuation forces, frequency 
drifts, and deteriorated signal transduction.

In our group, recent work has shown that SiO2-coated silicon MEMS 
resonators have very desirable frequency vs. temperature 
characteristics, making them ideal as a lower cost, lower power 
replacement for quartz resonators, for the purpose of clocks and 
frequency references. However, as SiO2 is a dielectric, these resonators 
are also susceptible to adverse effects due to dielectric charge.

In this talk I will present a model describing the effects of fixed and 
mobile dielectric charge on the frequency of these resonators. Further, 
I will show how purely AC polarization of these resonators improves 
frequency stability by eliminating charge drift, and removes the first 
order dependence on fixed charge-induced offsets. Finally, I will 
discuss oscillator design with these AC polarized resonators, including 
a number of interesting implications regarding these oscillators.




From sroonter at stanford.edu  Wed May 26 11:21:41 2010
From: sroonter at stanford.edu (Saeroonter Oh)
Date: Wed, 26 May 2010 11:21:41 -0700
Subject: PhD Oral Examination - Saeroonter Oh, Friday, May 28, 2010, 10:00AM
Message-ID: <AANLkTinb_FVLzPE_xIGzUSLdBfW9eFYzIqM8r4X7tHRY@mail.gmail.com>

Stanford University EE PhD Oral Examination

* *

*Modeling of III-V FETs for Beyond-22nm Logic Circuits*



Speaker: Saeroonter Oh

Advisor: Professor H.-S. Philip Wong

* *

Department of Electrical Engineering, Stanford University

*
*

*Date:* Friday, May 28, 2010

*Time:* 10 AM (Refreshments served at 9:45AM)

*Location:* Paul Allen Auditorium (CISX-101)



*Abstract*
  For beyond-22nm CMOS technology, III-V FETs are considered a compelling
candidate for extending the device scaling limit of low-power and high-speed
operation, owing to their superb carrier transport properties and recent
experimental advancements. In this talk, device modeling and circuit
analysis are used to study the key considerations for III-V logic circuits
to be viable. One of the requirements for VLSI logic is device density. A
study on device footprint scaling and the impact of parasitic elements on
circuit performance is presented. A physics-based compact model for III-V
FETs is introduced for accurate circuit-level performance estimation and
digital circuit design. The model encompasses effects essential for logic
applications that are not generally considered in other III-V models, such
as field-dependent quasi-ballistic ratios, trapezoidal quantum-well
energies, and capacitances with 2D potential information. We apply the
compact model in various circuit environments to demonstrate the capability
of the model and also to project performance and power trends for
beyond-22nm technology. In particular, we study the circuit performance of
sub-22nm SRAM circuits using III-V MOSFETs with high-k dielectrics and
propose a minimum requirement for the III-V PMOS strength for All-III-V SRAM
to be viable.
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From grahamab at stanford.edu  Wed May 26 09:55:07 2010
From: grahamab at stanford.edu (Andrew Blake Graham)
Date: Wed, 26 May 2010 09:55:07 -0700 (PDT)
Subject: Reminder: PhD Oral Examination :: Andrew Graham (Thursday, May
 27th, 9:00am)
In-Reply-To: <1473227650.94185.1274855479320.JavaMail.root@zm06.stanford.edu>
Message-ID: <1921095223.102726.1274892907957.JavaMail.root@zm06.stanford.edu>






Title: Methods for the wafer-scale encapsulation of MEMS 

Advisor: Thomas W.?Kenny 
Date: Thursday, May 27th, 2010 

Time: 9:00am (refreshments/snacks served at 8:45am) 

Location: Allen Building/CIS-X Auditorium 

? 

Abstract: 

? 

The packaging of microelectromechanical systems (MEMS) is one of the most important design considerations in taking a product from a research environment to a?commercial application.? It must not only provide a suitably clean and stable environment for the device, but?it should also withstand any harsh post-processing steps (such as wafer dicing and wire bonding) needed to integrate the device into its final system.? As a result, the cost of packaging is typically a large portion of the overall cost of any commercial MEMS product.? 

? 

Addressing these needs for electrostatic silicon MEMS, we have developed multiple wafer-scale encapsulation techniques that allow for a wide range of devices to be fabricated in a single fabrication process.? Expanding on the thin film, 'epi-seal'?encapsulation technique developed jointly by Stanford University and Bosch,?a packaging method was developed that makes use of?a thick sacrificial oxide deposition and planarization to allow for large lateral deflection structures side-by-side with proven narrow gap devices.? 

? 

In an effort to further increase the capabilities of wafer-scale encapsulation, a process combining fusion wafer bonding and epitaxial reactor sealing?was also developed.? Unlike many packaging techniques using wafer bonding, the overall package size?is only slightly bigger than the device itself and results in a stable, clean environment for the device.? The final encapsulated part consists of a single crystal silicon structure free of native oxide inside a single crystal silicon cap layer.? In addition, this encapsulation?can support numerous process variations, such as oxide-coated composite device structures and the first MEMS devices packaged at the wafer scale using silicon migration.? 

? 

?
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From dslin824 at stanford.edu  Wed May 26 15:47:12 2010
From: dslin824 at stanford.edu (Elvis Der-Song Lin)
Date: Wed, 26 May 2010 15:47:12 -0700
Subject: Reminder: PhD Oral Defense : Der-Song (Elvis) Lin, Thursday, May 27, 
	2010; 1pm, Packard 202
Message-ID: <AANLkTil8YTbiL2Ls40bSXsN5G8CmQgepB3vmXkhcp4p5@mail.gmail.com>

>
> Department of Mechanical Engineering
> University PhD Dissertation Defense
>
>
> *Interface Engineering of Capacitive Micromachined Ultrasonic Transducers
> (CMUTs) for Medical Applications*
>
> Der-Song (Elvis) Lin
> Research Advisor: Professor B. T. Khuri-Yakub
>
> 27 May 2010 @1:00 p.m.
> in
> Packard Building, Room 202
> (Delicious food at 12:45 p.m.)
> *
> *
> Abstract
>
>       Over the last decade, capacitive micromachined ultrasonic transducers
> (CMUTs) have been widely studied in academia and industry. CMUTs provide
> many benefits over traditional piezoelectric transducers including
> improvement in performance through wide bandwidth, and ease of electronics
> integration, with the potential to batch fabricate very large 2D arrays with
> low-cost and high-yield.  Though many aspects of CMUT technology have been
> studied over the years, packaging the CMUT into a fully practical system has
> not been thoroughly explored.  Two important interfaces of packaging that
> this defense explores are the interface between CMUTs and patients, i.e.,
> device encapsulation, and the interface between CMUTs and electronics, i.e.,
> full electronic integration of large scale 2D arrays.
>
>       In the first part of the talk I investigate the requirements for the
> CMUT encapsulation. For medical usage, encapsulation is needed to
> electrically insulate the device, mechanically protect the device, and
> maintain transducer performance, especially the access of the ultrasound
> energy.  While many other MEMS devices can be protected by hermetic sealing,
> CMUTs require mechanical interaction to a fluid, which makes fulfilling the
> previous criteria very challenging. The proposed solution is to use a
> viscoelastic material with the glass-transition-temperature lower than the
> room-temperature, such as Polydimethylsiloxane (PDMS), to preserve the CMUT
> static and dynamic performance. Experimental implementation of the
> encapsulated imaging CMUT arrays shows the device performance was
> maintained; 95 % of efficiency, 85% of the maximum output pressure, and 91%
> of the fractional bandwidth (FBW) can be preserved. A viscoelastic finite
> element model was also developed and shows the performance effects of the
> coating can be accurately predicted. Three designs, providing lens focusing,
> acoustic crosstalk suppression and flexible substrate, using PDMS layer were
> also demonstrated.
>
>       The second part of the talk presents contributions towards the
> electronic integration and packaging of large-area 2-D arrays. A very large
> 2D array is appealing for it can enable advanced novel imaging applications,
> such as a reconfigurable array, and a compression plate for breast cancer
> screening. With these goals in mind, I developed the first large-scale fully
> populated and integrated 2D CMUTs array with 32 by 192 elements. In this
> study, I demonstrate a flexible and reliable integration approach by
> successfully combining a simple UBM preparation technique and a
> CMUTs-interposer-ASICs sandwich design. The results show high shear strength
> of the UBM (26.5 g), 100% yield of the interconnections, and excellent CMUT
> resonance uniformity (s = 0.02 MHz). As demonstrated, this allows for a
> large-scale assembly of a tile-able array by using an interposer.
>
>       Interface engineering is crucial towards the development of CMUTs
> into a practical ultrasound system.  With the advances in encapsulation
> technique with a viscoelastic polymer and the combination of the UBM
> technique to the TSV fabrication for electronics integration, a fully
> integrated CMUT system can be realized.
>
> --
> ------------------------------------------
> Elvis Der-Song Lin
> Stanford University
> Ginzton Lab.
> Khuri-Yakub's Group
> Stanford CA, 94305
> e-mail: elvislin at stanford.edu
> ------------------------------------------
>
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From audet at stanford.edu  Thu May 27 10:39:33 2010
From: audet at stanford.edu (Ross Audet)
Date: Thu, 27 May 2010 10:39:33 -0700
Subject: TODAY, 4:15pm: Special seminar - Prof. Alan Willner, USC
Message-ID: <000901cafdc3$91b41a30$b51c4e90$@stanford.edu>

 

Special Seminar

Presented by the Stanford Optical Society

 

Towards Robust and Reconfigurable Optical Communication Systems

 

Alan Willner

Professor, Ming Hsieh Dept. of Electrical Engineering,

University of Southern California

 

Thursday, May 27, 4:15 PM, Applied Physics 200

Refreshments at 4:00 PM

 

Optical communications has enjoyed dramatic growth in terms of technical
achievement as well as commercial implementation. This presentation will
highlight three main topics.  Firstly, a broad perspective will be given on
some of the technical trends in optical communication systems.  Secondly, I
will describe technical issues related to stable, robust optical networking,
including: performance monitoring to determine the cause of any data
degradations, non-static channel-degrading effects, spectrally efficient
modulation formats, targeted optical and electrical signal processing, and
photonic switching.  Finally, I will discuss adding tunability, flexibility
and reconfigurability to different aspects of the base optical technologies.

 

About the speaker:

Alan Willner received the Ph.D. from Columbia University, has worked at AT&T
Bell Labs and Bellcore, and is Professor of EE at USC. He has received the
NSF Presidential Faculty Fellows Award from the White House, Packard
Foundation Fellowship, NSF National Young Investigator Award, Fulbright
Foundation Senior Scholars Award, OSA Leadership Award, IEEE Photonics
Society Distinguished Traveling Lecturer Award, USC University-Wide Award
for Excellence in Teaching, IEEE Fellow, OSA Fellow, Eddy Paper Award from
Pennwell Publications for the Best Contributed Technical Article, and
Armstrong Foundation Award. Prof. Willner has been President of IEEE
Photonics Society, Editor-in-Chief of IEEE/OSA Journal of Lightwave
Technology, Editor-in-Chief of Optics Letters, Editor-in-Chief of IEEE
Journal of Selected Topics in Quantum Electronics, Co-Chair of OSA Science &
Engineering Council, General Co-Chair of CLEO, General Chair of LEOS Annual
Meeting, Program Co-Chair of OSA Annual Meeting, and Chair of IEEE TAB
Ethics Committee. He has 800 publications, including 25 patents and 2 books.

 

 

 

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From jkoma at stanford.edu  Thu May 27 14:42:24 2010
From: jkoma at stanford.edu (Jason Komadina)
Date: Thu, 27 May 2010 14:42:24 -0700
Subject: sputtering porous films
Message-ID: <4BFEE740.2050104@stanford.edu>

Does anyone know of a campus resource for sputtering porous metals? 
Metallica may be an option, but I do not have experience depositing 
porous films with it. Specifically I need porous PtRu.

Thanks!
Jason


From svo at stanford.edu  Thu May 27 18:30:48 2010
From: svo at stanford.edu (Sonny Vo)
Date: Thu, 27 May 2010 18:30:48 -0700
Subject: pdms question
Message-ID: <000001cafe05$6709af60$351d0e20$@edu>

Hello labmembers,

Does anyone have experience working with PDMS? I am trying to get a small
volume for an experiment involving liquid tension/viscosity. Thank you in
advance. 

 

Best Regards,

SonnyV

---------------

"What makes the desert beautiful," said the Little Prince ,"is that
somewhere it hides a well ."

    _.--.  _

   ;,-   `' (            ,,,

  (  E#=====#############=: ]

   :_"'  ,._(         ```

     `--'         rock on     

Sonny Vo 

Ph.d candidate

Department of Applied Physics, Stanford University

(626) 216-4597

Harris Research Group:  <http://snow.stanford.edu/index.html>
http://snow.stanford.edu/index.html

 

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From jsnapp at stanford.edu  Fri May 28 14:21:16 2010
From: jsnapp at stanford.edu (Justin Snapp)
Date: Fri, 28 May 2010 14:21:16 -0700
Subject: Flexures In MEMS seminar - Roman Gutierrez - Tuesday June 1 4-5pm Allen/CIS-101X
Message-ID: <703632B2-8569-4764-865E-F2CC4055829A@stanford.edu>

Flexures in MEMS
Tuesday, June 1, 2010   
4:00-5:00 pm Allen 101X Auditorium

Roman Gutierrez
Tessera
Arcadia, California


Abstract

Flexures are commonly used in Micro Electro Mechanical Systems (MEMS) to introduce compliance into sensors and resonators, allowing them to respond to physical excitations such as acceleration, pressure, or electrostatic force. However, MEMS flexures can be used to serve a variety of additional purposes, including motion control, thermal coefficient of expansion (TCE) compensation and alignment. In optical products, such as MEMS based cell phone cameras, flexures enable MEMS to interface seamlessly with separate components manufactured using more traditional processes, such as plastic injection molding. This talk will present some of these unique flexure systems, and describe some of the considerations in their design. As an example, the MEMS flexures used in the cell phone camera for Motorola?s Ming A1600 will be described.

Speaker Bio 

After 10 years at NASA?s Jet Propulsion Laboratory working on high precision laser metrology and MEMS based gyroscopes, Roman Gutierrez co-founded SiWave (aka Siimpel) in 2000 to develop MEMS optical switches. The company was acquired by Tessera in 2010, and Roman continues as CTO/VP Engineering for the MEMS division. Mr. Gutierrez is a pioneer in the application of MEMS and Optics to new product development and has authored 52 issued patents and over 30 patents pending. He received his BS in Applied Physics from the California Institute of Technology, and his MS in Electrical Engineering from the University of California Santa Barbara.
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From mtang at stanford.edu  Fri May 28 14:42:10 2010
From: mtang at stanford.edu (Mary Tang)
Date: Fri, 28 May 2010 14:42:10 -0700
Subject: Lab Water Shutdown Scheduled for Monday, June 7
Message-ID: <4C0038B2.3070900@stanford.edu>

Dear Labmembers --


Facilities is planning repairs which will require shutdown of the 
Process Chilled Water (PCW) system in the building.   This is currently 
scheduled for Monday, June 7, starting at around 7 am and will take 
several hours to complete.  PCW is used on many tools and subsystems.  
It is also used for the air compressors for CDA (Clean Dry Air) which is 
used to drive valves on most tools.  So we anticipate that most tools in 
the lab may be unavailable for use during this time.  Some tools will 
also require additional time to recover following PCW loss.


We want you to be aware of this so that you can plan accordingly -- and 
will inform you of any changes in plans.


Thanks for your patience --

Your SNF staff

-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From popomoo at stanford.edu  Sat May 29 08:57:44 2010
From: popomoo at stanford.edu (SangMoo Jeong)
Date: Sat, 29 May 2010 08:57:44 -0700
Subject: odor in litho area
Message-ID: <AANLkTiknKAXPlt0UquixwDJVDdiYc9zmvcQ8QvRCpViW@mail.gmail.com>

Hi, labmembers.

I smelled a strange odor in the litho area, especially near YES oven region.
I have no idea where it comes from. Please be careful.



-- 
Sangmoo Jeong

Graduate student
Department of Electrical Engineering
Stanford University
Email: popomoo at gmail.com
Phone: 650-704-3295
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From gsosa at stanford.edu  Sat May 29 15:03:57 2010
From: gsosa at stanford.edu (Gary J Sosa)
Date: Sat, 29 May 2010 15:03:57 -0700 (PDT)
Subject: odor in litho area
In-Reply-To: <AANLkTiknKAXPlt0UquixwDJVDdiYc9zmvcQ8QvRCpViW@mail.gmail.com>
Message-ID: <1336420310.944071.1275170637813.JavaMail.root@zm08.stanford.edu>

Hi Labmembers...
 
  The odor/smell is in the L100 aisle of the Litho area. Mainly in the trianle between the Yes Oven, ASML Stepper and Large Blue M oven. It does not appear to be  a solvent or resist smell. It is like a burning smell. Checked all tools. None appear to be malfunctioning. Could not find source of smell. Notified SNF after hours cell phone and Stanford work control. Work control will contact appropriate people and investigate.

   ..Gary 

----- Original Message -----
From: "SangMoo Jeong" <popomoo at stanford.edu>
To: labmembers at snf.stanford.edu
Sent: Saturday, May 29, 2010 8:57:44 AM
Subject: odor in litho area

Hi, labmembers.

I smelled a strange odor in the litho area, especially near YES oven
region. I have no idea where it comes from. Please be careful.



-- Sangmoo Jeong

Graduate student
Department of Electrical Engineering
Stanford University
Email: popomoo at gmail.com
Phone: 650-704-3295


From amroy at stanford.edu  Sat May 29 16:27:24 2010
From: amroy at stanford.edu (Arunanshu Roy)
Date: Sat, 29 May 2010 16:27:24 -0700
Subject: odor in litho area
In-Reply-To: <AANLkTiknKAXPlt0UquixwDJVDdiYc9zmvcQ8QvRCpViW@mail.gmail.com>
References: <AANLkTiknKAXPlt0UquixwDJVDdiYc9zmvcQ8QvRCpViW@mail.gmail.com>
Message-ID: <AANLkTil4AGjWRe64vL_uAxwmFH8TjXd3uOFS_wwtwuFZ@mail.gmail.com>

Does anybody know if the odour has cleared? Is the litho area safe for
working now?

On Sat, May 29, 2010 at 8:57 AM, SangMoo Jeong <popomoo at stanford.edu> wrote:

> Hi, labmembers.
>
> I smelled a strange odor in the litho area, especially near YES oven
> region.
> I have no idea where it comes from. Please be careful.
>
>
>
> --
> Sangmoo Jeong
>
> Graduate student
> Department of Electrical Engineering
> Stanford University
> Email: popomoo at gmail.com
> Phone: 650-704-3295
>
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From shott at stanford.edu  Sun May 30 08:52:46 2010
From: shott at stanford.edu (John Shott)
Date: Sun, 30 May 2010 08:52:46 -0700
Subject: Litho odor update ...
Message-ID: <4C0289CE.8010305@stanford.edu>

SNF Lab Members:

As of 8:45 Sunday morning, I can detect no odors in the lithography 
areas.  Note: as this is hay fever season, I may not be in possession of 
the most sensitive detector.  Should you detect a recurrence of that 
odor, please report it.  If it is a strong odor it is always safest to 
leave the area.

Thanks,

John



From ludwig.galambos at gmail.com  Sun May 30 13:14:50 2010
From: ludwig.galambos at gmail.com (Ludwig G.)
Date: Sun, 30 May 2010 13:14:50 -0700
Subject: odor in litho area
In-Reply-To: <AANLkTil4AGjWRe64vL_uAxwmFH8TjXd3uOFS_wwtwuFZ@mail.gmail.com>
References: <AANLkTiknKAXPlt0UquixwDJVDdiYc9zmvcQ8QvRCpViW@mail.gmail.com>
	<AANLkTil4AGjWRe64vL_uAxwmFH8TjXd3uOFS_wwtwuFZ@mail.gmail.com>
Message-ID: <AANLkTikIXGscpHnbi6z2wcZIOFJrTne4wKXdPBchKAar@mail.gmail.com>

As of Sunday 1pm, there is very little smell/odor left Litho area, mostly
around Blue M/Yes

To me it feels like the insulation of an overheard transformer

Ludwig



On Sat, May 29, 2010 at 4:27 PM, Arunanshu Roy <amroy at stanford.edu> wrote:

> Does anybody know if the odour has cleared? Is the litho area safe for
> working now?
>
>
> On Sat, May 29, 2010 at 8:57 AM, SangMoo Jeong <popomoo at stanford.edu>wrote:
>
>> Hi, labmembers.
>>
>> I smelled a strange odor in the litho area, especially near YES oven
>> region.
>> I have no idea where it comes from. Please be careful.
>>
>>
>>
>> --
>> Sangmoo Jeong
>>
>> Graduate student
>> Department of Electrical Engineering
>> Stanford University
>> Email: popomoo at gmail.com
>> Phone: 650-704-3295
>>
>
>
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