From edmyers at stanford.edu Mon Jan 3 16:48:25 2011 From: edmyers at stanford.edu (Ed Myers) Date: Mon, 03 Jan 2011 16:48:25 -0800 Subject: Metals, RTP, PECVD, Metrology, etc Status Message-ID: <6.2.5.6.2.20110103163057.05b34768@stanford.edu> Happy New Year and Welcome Back. Fab start-up has been bumpy and we don't have all the equipment in the metals-rtp-pecvd-metrology group up and running. I do want to give you a quick update on where we stand Monday evening. Innotec: In Qualification: The shielding has been changed and it is pumping down within the expected time. Jeannie will be in early Tuesday morning to run the coat with the expectation the system will be available around noon on Tuesday. Metalica: Down for most of the week: Jim fought with the lift mechanism and ultimately decided he need to have a new channel machined in to the lift tube and a new key made. The components are at the machine shop under a priority request. We don't have a commitment when the machining will be completed, but we are hoping to have the system back towards the end of the week. Gryphon: As far as I know the system is operating as it was before the shutdown. The target replacement was one of the items which did not happen over the holidays. RTP's: All four systems are back under power and should be operating as before the shutdown. STS PECVD: In qualification, with no known problems and should be available by noon on Tuesday. Woollam: Down: The computer is not communicating with the control electronics. I'm in touch with Woollam and we have found corrupted IP addresses. I am hopeful the system will be UP on Tuesday. As for the balance of the tools, I do not know of any problems and they should be available when the fab opens in the morning. These tools include the CMP, Prometrix, Nanospecs, AFM, Profilometers, ... You will also notice, Jim installed the new SRD by the nitride wet bench. Regards, From mtang at stanford.edu Tue Jan 4 08:00:28 2011 From: mtang at stanford.edu (Mary Tang) Date: Tue, 04 Jan 2011 08:00:28 -0800 Subject: SNF Lab is now open! Message-ID: <4D23441C.8040209@stanford.edu> Dear Labmembers -- Happy new year and welcome back! The lab is now officially open. It was a busy shutdown with a lot of activity: make sure to check Coral for tool status before committing your wafers. Update summaries are posted or forthcoming: Furnaces (http://snf.stanford.edu/cgi-bin/ezmlm-cgi/2130) Metals/RTP (http://snf.stanford.edu/cgi-bin/ezmlm-cgi?mss:4384:201101:ighileapbfhbpbaibjdj) Etch (http://toolstatus.blogspot.com/) Litho (http://snf.stanford.edu/cgi-bin/ezmlm-cgi/2100) Some tools still require qual testing and there are still some cleanup tasks to be finished -- your help would be appreciated! *Please be reminded of the lab and CAD room cleanups: All Items that were not labeled or properly stored in bins were removed. All these items which are not claimed by March 1 will be disposed of or recycled.* As for the shutdown, here's a summary of just some of the activities: 1. Major PM to building substations. This required shutdown of power to both Allen buildings. Breakers were cleaned and checked. We'd been running at near capacity on one unit, but are now back to running on both. Facilities and EH&S worked to decontaminate/cleanup/repair an old leak. They did a great job of coordinating with each other and our staff to minimize downtime and brought things back up hours ahead of schedule. (However... despite the maintenance staff coming in to perform power down/power up before/after the substation PM, some of the lab tools did not take to the power shutdown very well -- a reminder to check Coral for current status.) 2. Annual TGO inspection/testing. This is done under the supervision of the County -- and it would appear that this was the cleanest inspection from the County ever (congratulations to the TGO effort led by Ted & Leonard.) 3. Solvent exhaust work. Facilities replaced the fan to boost the lab solvent exhaust. Team Litho spent many days to baseline the coat tools before the exhaust upgrade and are working to bring them back to qual standards (check Coral). This, by the way, is an important project for litho because for the first time in years, the litho area is not solvent exhaust limited -- insufficient exhaust has prevented installation of the second coat track and limited performance of the EV Spraycoat and KS Coater tools. With the upgrade, Team Litho should be able to make great progress on these projects. 4. Lab equipment. The maintenance crew continued working on equipment installations, repairs, and preventive maintenance. The process group decontaminated wet benches (thanks Uli!), scrubbed work surfaces, and started in on quals. As issues on some of these tools persist, check Coral for current status. If you have any questions, contact staff. Happy processing!!! Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mahnaz at stanford.edu Tue Jan 4 08:57:53 2011 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Tue, 04 Jan 2011 08:57:53 -0800 Subject: Litho up date Message-ID: <4D235191.9080002@stanford.edu> Hello all, Happy holidays During the shut down there were some work done on the litho area fan and we have increase of static pressure in the litho area. In order to start the lab, we have put all the adjustment to where it was before the exhaust upgrade and tested most of the process during the shutdown. Yes oven is up and has been tested. Most metrology tools are up. SVGcoat recipe manager hard drive died, out for repair. down. SVGcoat 2 is up and has been tested for 3612 1um and 1.6 um. we will test the rest of the programs today. Please note that 220-3 has been moved to SVGcoat and 3617m moved back to track 2. we have upgraded all the documentation. ASML: after the annual Pm Joey and Linda are doing the metrology for Pm, XPA marks and 3D. *I will notify you on some adjustment has been done to XPA in a different note.* The system should be up Wednesday morning. Karlsuss2 goth the annual pm but did not get tested for BSA ( will do that on 1/5/11). I tested the system and for 1 um 3612 ---.9 seconds exposure resolved 1.5 um. I will test the system with 3612 1.6 um resist today. Karlsuss1, will get its annual pm on Wednesday 1/5 We have changed the lamp and I will test the system today. Ev aligner is up and ready to be tested , I will do that today. Headway is up and two new 4" chucks are purchased so enjoy them. Laurell went to vendor for pm and should be back some time today. Down SVGdev UP SVGdev2 UP The spray coater did not come up after we powered the tool up, we will follow up with EVG. The EV bonder is up and tested in manual mode but I have not ran a test yet. All the ovens have been turned back on and the temp. has been confirmed. All the hot plates will get tested some time today. we will send out more info in a day or two. Litho team -------------- next part -------------- An HTML attachment was scrubbed... URL: From mdeal at stanford.edu Tue Jan 4 09:08:49 2011 From: mdeal at stanford.edu (Michael Deal) Date: Tue, 04 Jan 2011 09:08:49 -0800 Subject: SNF REU program Message-ID: <4D235421.8090300@stanford.edu> An HTML attachment was scrubbed... URL: From rthowe at stanford.edu Tue Jan 4 09:56:00 2011 From: rthowe at stanford.edu (Roger T. Howe) Date: Tue, 04 Jan 2011 09:56:00 -0800 Subject: SNF Operations Director search: your help requested Message-ID: <4D235F30.8080601@stanford.edu> Dear Labmember community, Welcome to 2011! It's great to see the SNF coming back online -- thanks to the staff for their efforts in bringing the tools back up and in better communicating where they all stand. As many of you know, we're searching for an Operations Director for the SNF. Here's the summary from the Stanford Jobs website. If you know of a potential candidate, I'd greatly appreciate it if you could send him or her our way. Thanks, Roger ----------- The Operations Director reports directly to the SNF Faculty Director and is expected to work with significant autonomy. The Operations Director is the primary liaison between the SNF and other administrative offices within the University, including but not limited to the School of Engineering Dean?s Office Administration & Finance, the Office of Sponsored Research and Environmental Health & Safety. Primary responsibilities include the following: ? Creating a motivated work environment that organizes and allocates staff in order to achieve the SNF?s goals ? Managing proper staffing levels ? Performing feasibility studies and cost and revenue analyses and developing financial projections to ensure long-term stability of the SNF ? Ensuring that fabrication tools meet the research needs of the labmember community ? Monitoring, managing and balancing the budget ? Operating the SNF according to policies set forth by the University and applicable sponsors ? Coordinating the facility?s operations with other shared nanotechnology labs at Stanford ? Overseeing operational, facility and regulatory issues related to the handling, use and disposal of various hazardous materials Qualifications: The successful candidate is expected to have the following qualifications and will preferably have worked in an academic and/or research laboratory. ? A minimum of seven years experience designing, implementing, maintaining and measuring effective and efficient financial and administrative operations at a senior level. ? Conceptual and analytical skills, including the ability to identify problems and implement effective solutions ? Excellent interpersonal and communication skills ? Sufficient technical knowledge to both ensure effective communication with the Faculty Director and technical staff and to make a variety of decisions that affect operations of the SNF ? Experience allocating staff resources to improve existing equipment operations and provide reliable performance for the research community ? Proven skills in personnel management, supervision and policy implementation ? Familiarity with managing facilities/space and property management according to institutional and sponsor policies ? Experience monitoring compliance with health and safety policies and procedures ? Strong computer skills, including experience working in an environment with varied and complex administrative computing systems (such as Oracle Financials in the Stanford environment), as well as substantial expertise in Microsoft Office From mtang at stanford.edu Tue Jan 4 12:31:53 2011 From: mtang at stanford.edu (Mary Tang) Date: Tue, 04 Jan 2011 12:31:53 -0800 Subject: Found phone in the gowning room Message-ID: <4D2383B9.1090009@stanford.edu> Dear labmembers -- We've got a mystery phone found in the SNF gowning room. If you think it's yours, please drop by my office. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From edmyers at stanford.edu Tue Jan 4 13:44:04 2011 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 04 Jan 2011 13:44:04 -0800 Subject: EE410 is in full swing Message-ID: <6.2.5.6.2.20110104133518.053f1c48@stanford.edu> All, With the beginning of the new calendar year, so is the emergence of this years version of the EE410 class. Starting this morning and continuing for the next couple of months you will see reservations on the equipment required to complete the EE410 processing. Most of these reservations will be under my name (emyers), but will be used by the TA's for the class. Remember there is a significant amount of processing required within a condensed schedule. Please honor the intent of our reservations, as we may arrive a little late or maybe a little early. I will try and make all the reservations at least two weeks prior, so you will be able to see the tool requirements in advance. If you have any questions or concerns, please contact me. The EE410 group thanks you for your annual support. Regards, Ed Myers and the EE410 team From amet at stanford.edu Tue Jan 4 15:47:34 2011 From: amet at stanford.edu (Francois Amet) Date: Tue, 4 Jan 2011 15:47:34 -0800 Subject: etching narrow trenches in SiO2 Message-ID: <255B9FB8-45DB-4F6A-9195-88EE6297A3FC@stanford.edu> Hi all, Could anybody tell me what is the best way to etch 100nm wide x 100nm deep trenches in SiO2? Which ebeam resist and which etcher should I use? The trenches are widely spaced, the substrate is gold contaminated, the depth has to be quite precise. Thank you very much for your help. Francois From mtang at stanford.edu Tue Jan 4 22:01:56 2011 From: mtang at stanford.edu (Mary Tang) Date: Tue, 04 Jan 2011 22:01:56 -0800 Subject: Winter Course Announcement: EE412, Adv. Nanofab. Lab Message-ID: <4D240954.7000309@stanford.edu> Dear Labmembers -- Due to popular demand, EE412: Advanced Nanofabrication Laboratory, is back for Winter term. This is a team-project-based course with the aim to develop, characterize and document processes that will be of value to the SNF labmember community. The instructor this term is Prof. Beth Pruitt. Students receive not only course credit, but lab time and supplies in support of their projects -- and of course the satisfaction of contributing to the lab community knowledge base. For more information, check out the course description and reports from the Fall session on the wiki (https://snf.stanford.edu/SNF/processes/ee412 ). The first class will be Wednesday, Jan. 5, 3:15-5 pm in Allen 101 and will meet weekly at this time. Projects (and mentors, by Coral ID) collected thus far are listed below.* ALD (jprovine):*These projects will be carried out on the smaller Savannah.The more capable Fiji will be operational as soon as permitting allows, so there is some possibility one or more of these projects may transfer over. -Yt2O3/Yt-Zr-Oxide nanolaminates as thermal isolation and dielectric in battery stacks. -Al2O3 as a highly conformal etch mask for STSetch and XeF2 (for achieving extremely high aspect ratio structures). -Extreme aspect ratio coverage (perhaps in combination with Al2O3 etch masking.) -Nitride films (TiN, WN, HfN, AlN) *Poly/low temperature SiGe (maurice):*For use as mechanical isolation layer between CMOS and MEMS structures.Characterization in tylansige and/or thermcopoly2. *STSetch2 (mcvittie):* Possible projects are - -Characterization/development of standard etch recipes. -Characterization/development of through-wafer etching methods. *AW610 RTA characterization (emyers):*The new RTA's offer flexibility with respect to temperature range, materials, and substrates.But the actual temperatures the devices are subjected to are uncertain.This project would focus on characterizing the thermal offsets in the RTA's using carrier wafers or susceptor. *EVSprayCoater (mahnaz & jparker):*This tool is designed for creating resist coatings over structures with high aspect ratios that can range from conformal to planarizing.Two possible projects: -Characterization/development of ASML exposure in deep trenches (continuation from EE412 Fall.) -Characterization/development of other resist recipes. *Front-to-back alignment metrology for the ASML (vinnypici).*Mentoring by ASML engineers.ASML is extremely interested in precision metrology for 3D align and are hoping that an enterprising student might be interested in patterning optical structures on the front and back sides of quartz wafers as a means of quantifying alignment. *Negative lift-off/image reversal resist (mahnaz):*The newer negative resists can be tuned to provide a negative/retrograde profile, serving as a reverse image, lift-off alternative to the conventional LOL 2000 bilayer resist process. *Silicon-silicon wafer bonding (mtang)* If you would like to enroll, serve as a mentor, or propose a project please get in touch with one of us. And please spread the word. Thanks for your attention -- The EE412 Project Mentors -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwpchen at stanford.edu Tue Jan 4 22:20:16 2011 From: jwpchen at stanford.edu (Peter Chen) Date: Tue, 04 Jan 2011 22:20:16 -0800 Subject: EE PhD Oral Examination - Peter Chen, Friday, January 21, 2011; 2:00pm Message-ID: <4D240DA0.1060608@stanford.edu> Stanford University Ph.D. Dissertation Defense Title: ?Heterogeneous Integration by Dry Parallel Insertion? Jeng-Wen Peter Chen Department of Electrical Engineering Research Advisor: Prof. Roger Howe Date: Friday, January 21, 2011 Time: 2:00 pm (Refreshments beforehand) Location: Allen CIS 101X (Auditorium) http://campus-map.stanford.edu/index.cfm?ID=04-055 Abstract: Integration of CMOS and MEMS promises systems that are smaller, lighter, more power-efficient, and higher performance. One approach is Heterogeneous Integration, which combines MEMS and CMOS from different substrates, avoiding challenges in co-fabrication. In this talk, I will present a method for integration of silicon chiplets into target wafer pockets by a dry, two-step, backside insertion. The precise mechanical alignment is provided by wafer-embedded guide tabs, giving better than 2.5?m alignment, with zero applied insertion force. The scaling to higher precision is possible with more precise chiplets. The "reconstituted" wafer can continue batch wafer processing for further process flexibility. This process can provide dense and short interconnections between CMOS and MEMS, as well as provide a generic method for precise passive alignment of microfabricated parts. From cbeasley at stanford.edu Wed Jan 5 22:45:12 2011 From: cbeasley at stanford.edu (Cara Beasley) Date: Wed, 5 Jan 2011 22:45:12 -0800 Subject: Chemistry PhD Oral Exam - Cara Beasley, Friday, January 7th, 2011 Message-ID: Stanford University Ph.D. Dissertation Defense Title: "Chirality distributions: Effects of carbon source and growth condition changes on the single-walled carbon nanotubes grown by CVD" Cara Beasley Chemistry Department Advisors: Prof. H.-S. Philip Wong and Prof. Bruce Clemens Date: Friday, January 7th, 2011 Time: 10:15 am (Donuts provided beforehand) Location: Paul Allen Building Auditorium (CISX) 101X Abstract: Single walled carbon nanotubes (SWNTs) are an interesting material with many possible applications including nanoelectronics, flexible electronics and sensors. One of current challenges in application of SWNTs is the fact that their synthesis procedures yield SWNTs with a distribution of chiralities, radii, and properties, instead of a homogenous material. It is also not currently possible to selectively fabricate specific distributions for different applications. In an effort for understand and control SWNT growth, we explored a range of growth conditions in the chemical vapor deposition (CVD) growth of SWNTs, including the use of liquid carbon sources instead of gaseous carbon sources. Some of the condition variables explored were carbon source composition, carbon source concentration, growth temperature, and carrier gas composition. Using a combination of Raman spectroscopy and SEM imaging, we demonstrate a clear dependence of changes in the distribution of SWNTs on that growth conditions varied. Of particular interest was the ratio of semiconducting SWNTs to metallic SWNTs, which was determined by correlating Raman spectroscopy data with device measurements. Distribution changes were seen using a range of carbon source molecules and can be used to tune as required for different applications. The greatest single chirality enrichment was seen at high temperatures using 2-butanol as the carbon source, while the greatest range of chiralities was seen with ethanol as the carbon source. Correlating the SWNT distribution changes with the growth conditions varied also yields insight into the growth mechanism of CVD grown SWNTs. This insight and a better understanding of the SWNT growth mechanism will lead to a further realization of SWNT application potentials. -------------- next part -------------- An HTML attachment was scrubbed... URL: From piyushv at stanford.edu Thu Jan 6 18:44:51 2011 From: piyushv at stanford.edu (Piyush Verma) Date: Thu, 6 Jan 2011 18:44:51 -0800 Subject: Reminder: PhD defense, Tomorrow - Friday (Jan 7), 2 pm, CISX 101 Message-ID: *Nanoscale metallic electrodes for intracellular electrical measurements* Piyush Verma Stanford University PhD Oral Defense ? Department of Materials Science and Engineering Advisor: Prof. Nicholas A. Melosh *Date*: Friday, January 7th, 2011 *Time*: 2 pm (Refreshments start at 1:45pm) *Location*: CISX Auditorium (101X) http://campus-map.stanford.edu/index.cfm?ID=04-055 Interfacing living matter to electronics with the ability to monitor and deliver spatio-temporal signals to cells or cell networks is promising for various fundamental biophysical studies and also for applications such as high resolution neural prosthetics, on-chip electrically addressed artificial neuronal networks and chip based patchclamps. The main challenge in developing such interfaces is controlling the structure and properties of the junction between the device and cell membrane. Recent advances in nanoscale materials have enabled interactions at length scales natural to biology, thus providing an opportunity to control the structure of such junctions. In this presentation, the design and development of nanoscale intracellular electrodes and their application as powerful tools for the life sciences will be discussed. By utilizing the design principles of transmembrane proteins that span the cell membrane, biomimetic metallic electrodes were fabricated for intracellular electrical measurements. The stacked hydrophilic-hydrophobic-hydrophilic domain architecture of transmembrane proteins was replicated in nanoscale post electrodes by evaporating and selectively functionalizing different metal layers. These metal layers were put down using e-beam evaporation following their definition using e-beam lithography. To enhance the electrical signal from the electrode, the tip of the post was made electrochemically active by depositing a thin layer of platinum. Thorough electrical passivation of the device was achieved through oxidation, atomic layer deposition and polymer coating. The formation of a well controlled junction between the post electrode and cell membrane was demonstrated by testing the device with red blood cells. The electrical properties of the device were determined by performing cyclic voltammetry in a buffer solution with electrochemically active species. A giga-ohm seal was observed to form spontaneously as the cell was brought close to the post, confirming intracellular access. The formation of giga-ohm seal is critical for patchclamping, a technique used extensively in the pharmaceutical industry. To elucidate the molecular structure of the electrode-membrane interface, coarse grained molecular dynamics (MD) simulations were carried out. A methodology was developed to calculate the energetics of interface formation. In addition to these simulations, a physical model of cell deformation was developed to understand the mechanics of cell-post interaction. Together, MD simulations and cell deformation model provide a powerful approach to optimize the electrode design. -- Piyush Verma Geballe Laboratory for Advanced Materials McCullough Building, Rm. 203 Stanford University, Stanford, CA 94305-4045 (650) 892 4909 http://www.stanford.edu/group/melosh/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From mbaran at stanford.edu Fri Jan 7 09:20:03 2011 From: mbaran at stanford.edu (Maureen Baran) Date: Fri, 7 Jan 2011 09:20:03 -0800 Subject: Found Cell Phone in Litho Area of the Lab Message-ID: <000101cbae8f$1f925070$5eb6f150$@edu> Dear Labmembers, A concerned labmember found a Nokia cell phone in the Litho area of the lab. If this is your phone please come by my cubicle #41 and claim it. Maureen Maureen Baran Stanford Nanofabrication Facility Lab Services Administrator mbaran at stanford.edu 650-725-3664 -------------- next part -------------- An HTML attachment was scrubbed... URL: From cachang at stanford.edu Fri Jan 7 09:36:43 2011 From: cachang at stanford.edu (Chia-Ming Chang) Date: Fri, 7 Jan 2011 09:36:43 -0800 (PST) Subject: Special Seminar - Dr. Janglin Chen (ITRI Taiwan), Friday Jan.14, 4PM, CISX 101 In-Reply-To: <474046208.554319.1292276840253.JavaMail.root@zm06.stanford.edu> Message-ID: <688269430.1015877.1294421803133.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by the Stanford Optical Society e-Paper Technology and Future Development Dr. Janglin Chen Industrial Technology Research Institute (ITRI) in Taiwan Friday, January 14, 4:00 PM, CISX 101 Refreshments at 3:45PM Electronic paper (e-Paper) has drawn much attention for its promise to curb the overuse of paper, such as printed matters, and documents, etc. The one important feature of e-Paper displays is that they do not require backlight to operate, providing a paper-like, power saving, reading experience. Also, their bi-stability enables zero power consumption for still image display. e-Paper is projected, by many market research firms, to have huge potential in a variety of applications, such as e-Book, POP/e-Signage, shelf labels, and others. Among them, e-Reader, the first major e-paper product following the launch of Amazon?s Kindle in 2007, has caught most fanfare. Initial products have limited color capability, and are on rigid substrate, such as glass. Research and development, next, will aim at colorization, refresh-rate enhancement, touch function, and high flexibility, etc. To meet the future needs for digital life style and for a ?greener? display panel, ITRI has focused research topics on flexible display technologies. For digital life, flexible EPD, OLED will address the portability, while flexible touch is to enhance user-friendly interface. For ?green panel,? large-area, roll-to-roll coatable Ch-LCD will deliver power saving, material and cost advantages. Meanwhile, flexible substrate and TFT backplane are developed as the basic, enabling technologies to render today?s many rigid displays to become flexible. About the speaker Dr. Janglin (John) Chen is a Vice President of Industrial Technology Research Institute (ITRI) in Taiwan , and the General Director of ITRI?s Display Technology Center . Prior to Joining ITRI, Dr. Chen was a Research Fellow of Eastman Kodak Company in Rochester, New York, where he held many R&D managerial positions from 1982 to 2006, and is the author of sixty technical articles, and 33 issued US Patents. A native of Taiwan , Dr. Chen holds a Bachelor degree from National Tsing Hua University , Ph.D. degree from Polytechnic University in Brooklyn , New York , and is a graduate of Stanford Executive Program, Gradate School of Business, Stanford University . In ITRI, Dr. Chen and his staff focus on new display and advanced technology research, including flexible displays, substrates, inorganic and organic TFTs. Dr. Chen also holds the appointment of Adjunct Professorship with Display Institute of National Chiao-Tung University , and is the Chairman of Taiwan Display Material & Device Association (TDMDA). Stanford Optical Society: http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Seminar_Chen.pdf Type: application/pdf Size: 34859 bytes Desc: not available URL: From gsosa at stanford.edu Fri Jan 7 16:30:15 2011 From: gsosa at stanford.edu (Gary J Sosa) Date: Fri, 7 Jan 2011 16:30:15 -0800 (PST) Subject: SVG Coater #1 is Down Message-ID: <1296550156.550556.1294446615141.JavaMail.root@zm08.stanford.edu> Hello Labmembers We decide to leave the track down over the weekend so that on Monday, we can spend some more time setting up the track and doing some additional testing. The 220-3 coatings are showing an artifact pattern that may be related to exhaust. Adjusting for 220-3 may impact 220-7 and 3612 resists. We do not want to risk users having problems over the weekend and causing reworks. Sorry for the inconvenience. The Litho Team From mtang at stanford.edu Mon Jan 10 10:19:57 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 10 Jan 2011 10:19:57 -0800 Subject: Process Clinic Today (Monday) at 2 Message-ID: <4D2B4DCD.7040500@stanford.edu> Greetings labmembers! The first Process Clinic of 2011 will be today (Monday) from 2-3 pm. We meet in the cubicle area near Maureen's office. Bring your processing questions and SpecMat requests. Staff and experienced labmembers will be on hand to help brainstorm solutions and review requests. All in the lab community are welcome. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From lana.lau at gmail.com Thu Jan 13 10:16:51 2011 From: lana.lau at gmail.com (lana lau) Date: Thu, 13 Jan 2011 10:16:51 -0800 Subject: special seminar Thurs Jan 20: T.W. Clinton (Hitachi Global Storage Technologies) Message-ID: <30A137C0-46D7-44BF-9062-B2AE37BEE38D@gmail.com> Please join the Stanford Optical Society for the following seminar presented by TW Clinton of Hitachi Global Storage Technologies. Refreshments will be served at 4:00 PM outside the Nano 232 corridor. Special Seminar cosponsored by the Stanford Optical Society: A little bit is a big achievement: overcoming barriers in nano-scale magnetic recording T.W. Clinton Hitachi Global Storage Technologies, San Jose Research Center Thursday, January 20th, 4:15pm Refreshments at 4pm Nano Building 232 The $100-billion data-storage market is driven by, arguably, the fastest moving technology in high-tech industry, where the nano-scale is commonplace in products. Not only are bits measured in nanometers, but data rates (> GHz) have driven timescales sub nanosecond. Over the last decade, in particular, there has been unprecedented acceleration in the development of advanced magnetic recording technologies, from perpendicular to Heat, Microwave and Electrically assisted magnetic recording (HAMR, MAMR and EAMR). Along the way, there have been numerous physical barriers overcome, while even more daunting tasks lie ahead. For the magnetics that underpin hard disk drives, in particular, there are many physical barriers we need to overcome as we reduce bit dimensions and increase data rates with each generation of the technology. For example, smaller bits are more susceptible to thermal agitation, while data rates are limited by the relaxation rates of magnetic excitations. In this talk, I explore the physics and engineering of shrinking bits and short timescales. Speaker Biography Tom Clinton holds a doctorate in Physics from the University of Maryland, where his thesis was on magnetic properties of superconductors. He has worked in the data-storage industry since 1999, spending a decade at Seagate Technology?s research division in Pittsburgh, PA, and is currently a member of the research staff at Hitachi?s San Jose Research Center. At Hitachi, he works on advanced storage technology, FIB/SEM applications, and fabrication and characterization of magnetic and optical devices. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... 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URL: From cachang at stanford.edu Thu Jan 13 12:38:53 2011 From: cachang at stanford.edu (Chia-Ming Chang) Date: Thu, 13 Jan 2011 12:38:53 -0800 (PST) Subject: [Reminder] Special Seminar - Dr. Janglin Chen (ITRI Taiwan), Friday Jan.14, 4PM, CISX 101 In-Reply-To: <688269430.1015877.1294421803133.JavaMail.root@zm06.stanford.edu> Message-ID: <1291831191.150443.1294951133282.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by the Stanford Optical Society e-Paper Technology and Future Development Dr. Janglin Chen Industrial Technology Research Institute (ITRI) in Taiwan Friday, January 14, 4:00 PM, CISX 101 Refreshments at 3:45PM Electronic paper (e-Paper) has drawn much attention for its promise to curb the overuse of paper, such as printed matters, and documents, etc. The one important feature of e-Paper displays is that they do not require backlight to operate, providing a paper-like, power saving, reading experience. Also, their bi-stability enables zero power consumption for still image display. e-Paper is projected, by many market research firms, to have huge potential in a variety of applications, such as e-Book, POP/e-Signage, shelf labels, and others. Among them, e-Reader, the first major e-paper product following the launch of Amazon?s Kindle in 2007, has caught most fanfare. Initial products have limited color capability, and are on rigid substrate, such as glass. Research and development, next, will aim at colorization, refresh-rate enhancement, touch function, and high flexibility, etc. To meet the future needs for digital life style and for a ?greener? display panel, ITRI has focused research topics on flexible display technologies. For digital life, flexible EPD, OLED will address the portability, while flexible touch is to enhance user-friendly interface. For ?green panel,? large-area, roll-to-roll coatable Ch-LCD will deliver power saving, material and cost advantages. Meanwhile, flexible substrate and TFT backplane are developed as the basic, enabling technologies to render today?s many rigid displays to become flexible. About the speaker Dr. Janglin (John) Chen is a Vice President of Industrial Technology Research Institute (ITRI) in Taiwan, and the General Director of ITRI?s Display Technology Center. Prior to Joining ITRI, Dr. Chen was a Research Fellow of Eastman Kodak Company in Rochester, New York, where he held many R&D managerial positions from 1982 to 2006, and is the author of sixty technical articles, and 33 issued US Patents. A native of Taiwan, Dr. Chen holds a Bachelor degree from National Tsing Hua University, Ph.D. degree from Polytechnic University in Brooklyn, New York, and is a graduate of Stanford Executive Program, Gradate School of Business, Stanford University. In ITRI, Dr. Chen and his staff focus on new display and advanced technology research, including flexible displays, substrates, inorganic and organic TFTs. Dr. Chen also holds the appointment of Adjunct Professorship with Display Institute of National Chiao-Tung University, and is the Chairman of Taiwan Display Material & Device Association (TDMDA). Stanford Optical Society: http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Seminar_Chen.pdf Type: application/pdf Size: 34859 bytes Desc: not available URL: From pruitt at stanford.edu Fri Jan 14 14:17:26 2011 From: pruitt at stanford.edu (Beth Pruitt) Date: Fri, 14 Jan 2011 14:17:26 -0800 Subject: Memorial Service 1/20 3pm for Rune Nielsen, Memorial Church Message-ID: Dear Friends The Microsystems Laboratory and friends of Rune Thode Nielsen will be remembering our dear colleague and friend at a memorial service in Memorial Church at 3pm on Thursday January 20th, 2011. Rune died in a car accident on December 18, 2010 and we lost a shining star that day. Even if you did not know Rune well, I would be very grateful for your support of our lab and his local community, especially since his family cannot travel from Denmark for this service. We will also celebrate Rune's life at a reception following the service at approximately 4pm in Bechtel International Center. We realize that everyone who met Rune has something wonderful to share about him and his enthusiastic and endearing personality. In advance of the service, we will be collecting pictures, letters, and tributes to Rune to share with each other and his family, more details are available on our webpage at: http://microsystems.stanford.edu/wiki/In_Celebration_and_Memory_of_Rune Rune was an international graduate student from Prof. Anja Boisen's laboratory at Denmark Technical University; he was a visiting researcher and active labmember at the Stanford Nanofabrication Facility and in the Microsystems lab since March 2010 as part of his MS program and thesis. He was an outgoing and amazing individual with a passion to improve the world and a positive attitude and support to share with everyone around him. He will be remembered well and he will be missed. I hope you can join us. Beth Pruitt -- Beth Pruitt, Ph.D., P.E. Associate Professor Silas H. Palmer Faculty Fellow Department of Mechanical Engineering Stanford University Stanford, CA 94305 group website: http://microsystems.stanford.edu/ email: pruitt at stanford.edu fax: 650-725-1587 -------------- next part -------------- An HTML attachment was scrubbed... URL: From pruitt at stanford.edu Sat Jan 15 09:58:58 2011 From: pruitt at stanford.edu (Beth Pruitt) Date: Sat, 15 Jan 2011 09:58:58 -0800 Subject: special seminar: Hiro Fujita, 1/20 1215pm. nano tensile testing in TEM and a nano transportation device driven by bio molecular motors Message-ID: Nano Hand-Eye System for Science and Engineering Hiroyuki Fujita Institute of Industrial Science University of Tokyo 12:15 pm January 20, 2011 Building 320 Room 105 In order to enhance scientific knowledge and engineering capability in nano scale, it is crucial to develop manipulation tools, i.e. nano hands, for handling an individual nano object or molecule. The tool must be combined with an advanced characterization method having both single atomic or molecular level sensitivity and simultaneous imaging capability, i.e. nano eyes. The author and his colleges have intensively investigated MEMS (micro electro mechanical system) design, fabrication and its application to nano and bio technologies. Nano scientific research using MEMS devices covers the tensile testing of nano contacts in transmission electron microscope (TEM) for in situ atomic level observation of deformation, micromachined Brownian motors and MEMS tweezers for capturing and characterizing DNA and other linear molecules electromechanically. MEMS for bio technology includes micromachined fL-chambers and heaters to allow single-molecular level enzymology , and the integration of bio molecular motors in MEMS for direct sorting and transportation of specific sample molecules. In this talk, I will focus on two topics; nano tensile testing in TEM and a nano transportation device driven by bio molecular motors. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001 122.jpg Type: image/jpeg Size: 11673 bytes Desc: not available URL: From ikding at stanford.edu Tue Jan 18 12:30:05 2011 From: ikding at stanford.edu (I-Kang Ding) Date: Tue, 18 Jan 2011 12:30:05 -0800 Subject: Line gratings as masters for soft lithography Message-ID: Dear labmembers, Does anyone have 1D grating patterns available that they can lend to us? We plan to replicate the pattern of the 1D grating master template with PDMS and use the PDMS stamp for soft lithography, so your grating pattern will remain intact. The grating period we are looking for is between 250 nm and 400 nm. Thanks, I-Kang From yli at unitysemi.com Wed Jan 19 10:35:41 2011 From: yli at unitysemi.com (sabrina li) Date: Wed, 19 Jan 2011 10:35:41 -0800 (PST) Subject: Lost notebook Message-ID: <580842.56725.qm@web203.biz.mail.re2.yahoo.com> Dear members, I lost my notebook in the Lab. If you found it , Please contact me. my phone number 408 316 9878. Thanks Sabrina From lana.lau at gmail.com Wed Jan 19 17:00:23 2011 From: lana.lau at gmail.com (lana@stanford.edu) Date: Wed, 19 Jan 2011 17:00:23 -0800 Subject: seminar tomorrow: T.W. Clinton (Hitachi Global Storage Technologies) Message-ID: Please join the Stanford Optical Society for the following seminar presented by TW Clinton of Hitachi Global Storage Technologies. Refreshments will be served at 4:00 PM outside the Nano 232 corridor. *Special Seminar cosponsored by the Stanford Optical Society:* * * *A little bit is a big achievement: overcoming barriers in nano-scale magnetic recording* * * T.W. Clinton Hitachi Global Storage Technologies, San Jose Research Center Thursday, January 20th, 4:15pm Refreshments at 4pm Nano Building 232 The $100-billion data-storage market is driven by, arguably, the fastest moving technology in high-tech industry, where the nano-scale is commonplace in products. Not only are bits measured in nanometers, but data rates (> GHz) have driven timescales sub nanosecond. Over the last decade, in particular, there has been unprecedented acceleration in the development of advanced magnetic recording technologies, from perpendicular to Heat, Microwave and Electrically assisted magnetic recording (HAMR, MAMR and EAMR). Along the way, there have been numerous physical barriers overcome, while even more daunting tasks lie ahead. For the magnetics that underpin hard disk drives, in particular, there are many physical barriers we need to overcome as we reduce bit dimensions and increase data rates with each generation of the technology. For example, smaller bits are more susceptible to thermal agitation, while data rates are limited by the relaxation rates of magnetic excitations. In this talk, I explore the physics and engineering of shrinking bits and short timescales. Speaker Biography Tom Clinton holds a doctorate in Physics from the University of Maryland, where his thesis was on magnetic properties of superconductors. He has worked in the data-storage industry since 1999, spending a decade at Seagate Technology?s research division in Pittsburgh, PA, and is currently a member of the research staff at Hitachi?s San Jose Research Center. At Hitachi, he works on advanced storage technology, FIB/SEM applications, and fabrication and characterization of magnetic and optical devices. -- Lana Lau Ph.D. candidate W. E. Moerner Lab Stanford University mailing address: Stanford University Department of Chemistry 333 Campus Drive #121 mailbox 99 Stanford, CA 94305 -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: TWClinton.pdf Type: application/pdf Size: 85954 bytes Desc: not available URL: From lianglia at stanford.edu Thu Jan 20 01:26:57 2011 From: lianglia at stanford.edu (lianglia at stanford.edu) Date: Thu, 20 Jan 2011 01:26:57 -0800 Subject: Pd etching rate Message-ID: Dear All, Does anyone know about the etching of Pd on Si? What kind of chemical is used and what is the approximate etching rate? Many thanks! Sincererly yours, Liangliang Zhang ------------------------------------------------------------ Ph.D. Candidate School of Electrical Engineering Stanford University CA 94305, U.S. Tel: 01-609-528-4962 M.S. Institute of Microelectronics, Peking University -------------- next part -------------- An HTML attachment was scrubbed... URL: From tholme at stanford.edu Fri Jan 21 09:36:58 2011 From: tholme at stanford.edu (Tim Holme) Date: Fri, 21 Jan 2011 09:36:58 -0800 Subject: high precision 'scope? Message-ID: We're looking to borrow a high precision digital, or perhaps an analog, oscilloscope for today. Preferably it can take 2 channels of input and output data to a computer, but that isn't 100% necessary. Does anyone have one we can borrow? Thanks, Tim -------------- next part -------------- An HTML attachment was scrubbed... URL: From cmcg at stanford.edu Fri Jan 21 11:58:50 2011 From: cmcg at stanford.edu (Christopher McGuinness) Date: Fri, 21 Jan 2011 11:58:50 -0800 Subject: residue after HF vapor etch? Message-ID: Hi all, Has anyone seen an obscure residue develop on a wafer after doing an HF vapor etch on oxide film? I've seen this in the past and am not sure what is causing it. If you have any ideas I would love to hear them. Here are my ideas: 1) condensation of water from the air causing variations in the etch. I fabricated a teflon holder to clamp small pieces to the hotplate to ensure no condensation forms and still see the residue, so probably not that. 2) residue of silicon dust from scribing. The problem seems to be more common for small pieces that have been cleaved. Maybe a thin residue of silicon dust from the cleaving is coated on the surface causing problems with the etch. I will try re-cleaning the small pieces after cleaving to see if this helps. 3) Thin layer of contamination from an earlier step in the process. I'm reaching here. I follow all the clean protocols, but due use cmp for several layers so could be related to that. Though I would expect it to be consistent, not intermitent, and not preferential to small pieces. Any other thoughts or experience? Thanks, Chris -------------- next part -------------- An HTML attachment was scrubbed... URL: From hector at AsylumResearch.com Fri Jan 21 11:21:15 2011 From: hector at AsylumResearch.com (Hector Cavazos) Date: Fri, 21 Jan 2011 19:21:15 +0000 Subject: single side KOH etching of silicon Message-ID: <5A653CAD436BD74F8BAD5CA6872A347566A669@Ex2010.AsylumResearch.com> Does anyone know the name of the company that manufactures a PEEK wafer holder that seals off one side of a wafer for single-sided chemical etching? Thanks, Hector ____________________________________ Hector Cavazos Asylum Research -------------- next part -------------- An HTML attachment was scrubbed... URL: From mdeal at stanford.edu Fri Jan 21 11:09:15 2011 From: mdeal at stanford.edu (Michael Deal) Date: Fri, 21 Jan 2011 11:09:15 -0800 Subject: students needed for UCB nanoclub visit Message-ID: <4D39D9DB.4040405@stanford.edu> An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon Jan 24 13:00:58 2011 From: mtang at stanford.edu (Mary Tang) Date: Mon, 24 Jan 2011 13:00:58 -0800 Subject: Process Clinic - Today, 2 pm Message-ID: <4D3DE88A.5060602@stanford.edu> Greetings labmembers! Process Clinic today (Monday) from 2-3 pm. We meet in the cubicle area near Maureen's office. Bring your processing questions and SpecMat requests. Staff and experienced labmembers will be on hand to help brainstorm solutions and review requests. All in the lab community are welcome. Your SNF staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From dasgupta at stanford.edu Mon Jan 24 14:44:27 2011 From: dasgupta at stanford.edu (Neil Dasgupta) Date: Mon, 24 Jan 2011 14:44:27 -0800 (PST) Subject: Etching Nickel films In-Reply-To: <255727899.440110.1295909026271.JavaMail.root@zm03.stanford.edu> Message-ID: <1397093596.440147.1295909067190.JavaMail.root@zm03.stanford.edu> Hello all, I am wondering if anybody has experience etching pure Nickel thin films, using wet or dry etching techniques? Thanks, Neil From dre17 at stanford.edu Mon Jan 24 16:49:04 2011 From: dre17 at stanford.edu (Andrei Iancu) Date: Mon, 24 Jan 2011 16:49:04 -0800 (PST) Subject: Transmission/absorption/reflectivity measurements In-Reply-To: <831533347.466344.1295915195484.JavaMail.root@zm06.stanford.edu> Message-ID: <1290211357.467454.1295916544859.JavaMail.root@zm06.stanford.edu> Good afternoon SNF labmembers, I am interested in characterizing the transmission/absorption/reflectivity properties of a number of thin films deposited on quartz but do not have a system to perform these measurements. Does anyone happen to know if a system capable of these types of measurements is available on campus? Thanks for your time, Andrei Iancu Stanford University Mechanical Engineering Nanoscale Prototyping Lab 440 Escondido Mall Bldg 530 Rm 226 Stanford, CA 94305 Cell: 562-225-2463 From eperalta at stanford.edu Mon Jan 24 23:02:02 2011 From: eperalta at stanford.edu (Edgar Peralta) Date: Mon, 24 Jan 2011 23:02:02 -0800 Subject: Transmission/absorption/reflectivity measurements In-Reply-To: <1290211357.467454.1295916544859.JavaMail.root@zm06.stanford.edu> References: <831533347.466344.1295915195484.JavaMail.root@zm06.stanford.edu> <1290211357.467454.1295916544859.JavaMail.root@zm06.stanford.edu> Message-ID: I think theres a Spectrophotometer available to trained users in Ginzton. What kind of films have you deposited on quartz? Edgar On Mon, Jan 24, 2011 at 4:49 PM, Andrei Iancu wrote: > Good afternoon SNF labmembers, > > I am interested in characterizing the transmission/absorption/reflectivity > properties of a number of thin films deposited on quartz but do not have a > system to perform these measurements. Does anyone happen to know if a > system capable of these types of measurements is available on campus? > > Thanks for your time, > > Andrei Iancu > Stanford University Mechanical Engineering > Nanoscale Prototyping Lab > 440 Escondido Mall Bldg 530 Rm 226 > Stanford, CA 94305 > Cell: 562-225-2463 > -------------- next part -------------- An HTML attachment was scrubbed... URL: From parksg at stanford.edu Tue Jan 25 13:12:35 2011 From: parksg at stanford.edu (Seonggeon Park) Date: Tue, 25 Jan 2011 13:12:35 -0800 (PST) Subject: MSE PhD Defense, Seong-Geon Park (Feb 7th, Monday, 10:30 am, CISX Auditorium) Message-ID: <002001cbbcd4$874ab560$95e02020$@edu> University PhD Dissertation Defense "The study of Resistive Switching Mechanism in TiO2 using First Principles Calculation." Seong-Geon Park Research Advisor: Prof. Yoshio Nishi Monday, Feb 7th, 2011, 10:30 am (Refreshments served at 10:15 am) Location: Paul G. Allen Auditorium (CISX 101) http://cis.stanford.edu/misc/directions.html Abstract Recently the interest in Resistive Random Access Memory (ReRAM) has been significantly increased, as it is now considered as the promising candidate for the next generation of non-volatile memory devices, due to its high density, low operating power, fast switching speed, and compatibility conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking an in-debt understanding. It has been proposed that the resistance switching is strongly coupled to the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens in microscopic level. Therefore systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principle study based on density functional theory. In this talk, I will first discuss "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 in terms of oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) will be demonstrated. Although it is known that TiO2 exhibits n-type semiconducting conductivity with extra electron carriers generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. I will demonstrate electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show how they changes by oxygen vacancies. The influence of the number of oxygen vacancies and different configurations of multi vacancies on the resistance change will be discussed. Oxygen vacancy ordering and the diffusion of either vacancy or hydrogen has a significant impact on both the formation of a conductive filament and the transition from "ON" to "OFF"-state. Results from this work suggest "ON"-state conduction and resistance switching modeling that could be described by the formation and rupture of a conductive filament incorporating oxygen vacancy ordered structure. -------------- next part -------------- An HTML attachment was scrubbed... URL: From sixram at stanford.edu Wed Jan 26 16:54:01 2011 From: sixram at stanford.edu (Han-Bo-Ram Lee) Date: Wed, 26 Jan 2011 16:54:01 -0800 Subject: ITO deposition Message-ID: Hi all, Is there anyone know about available ITO deposition by sputtering? It's not matter that the chamber is in a lab or from company service. Thanks in advance. Boram Han-Bo-Ram Lee, Ph.D Bent Research Group Department of Chemical Engineering Stanford University Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 Email : sixram[at]stanford.edu or sixram[at]gmail.com WWW : bentgroup.stanford.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From yhngchen at stanford.edu Wed Jan 26 17:15:40 2011 From: yhngchen at stanford.edu (Yihong Chen) Date: Wed, 26 Jan 2011 17:15:40 -0800 Subject: ITO deposition In-Reply-To: References: Message-ID: Also interested, can you please let me know if you find one? Thanks, -Yihong On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee wrote: > Hi all, > > Is there anyone know about available ITO deposition by sputtering? > > It's not matter that the chamber is in a lab or from company service. > > Thanks in advance. > > Boram > > > Han-Bo-Ram Lee, Ph.D > Bent Research Group > Department of Chemical Engineering > Stanford University > > Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 > Email : sixram[at]stanford.edu or sixram[at]gmail.com > WWW : bentgroup.stanford.edu/ > -- Yihong Chen PhD Candidate Department of Chemistry Stanford University ************************************* Lokey Laboratories, RM 229 337 Campus DR Stanford, CA 94305-5080 Phone: (650) 723-1610 Email: yhngchen at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From mike at twincreekstechnologies.com Wed Jan 26 17:27:15 2011 From: mike at twincreekstechnologies.com (Mike Vyvoda) Date: Wed, 26 Jan 2011 21:27:15 -0400 Subject: ITO deposition In-Reply-To: References: Message-ID: All - There's a good sputtering services company called Advanced Film Services in San Jose (advancedfilmservices.com). I've used them. You can see an ITO datasheet on the website. Mike Vyvoda Twin Creeks Technologies On Jan 26, 2011, at 9:15 PM, Yihong Chen wrote: > Also interested, can you please let me know if you find one? > > Thanks, > > -Yihong > > On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee wrote: > Hi all, > > Is there anyone know about available ITO deposition by sputtering? > > It's not matter that the chamber is in a lab or from company service. > > Thanks in advance. > > Boram > > > Han-Bo-Ram Lee, Ph.D > Bent Research Group > Department of Chemical Engineering > Stanford University > > Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 > Email : sixram[at]stanford.edu or sixram[at]gmail.com > WWW : bentgroup.stanford.edu/ > > > > -- > Yihong Chen > PhD Candidate > Department of Chemistry > Stanford University > ************************************* > Lokey Laboratories, RM 229 > 337 Campus DR > Stanford, CA 94305-5080 > Phone: (650) 723-1610 > Email: yhngchen at stanford.edu > -------------- next part -------------- An HTML attachment was scrubbed... URL: From kj.jackson at comcast.net Wed Jan 26 17:52:50 2011 From: kj.jackson at comcast.net (kj.jackson at comcast.net) Date: Thu, 27 Jan 2011 01:52:50 +0000 (UTC) Subject: good ITO deposition source In-Reply-To: Message-ID: <1318379481.1743214.1296093170553.JavaMail.root@sz0050a.emeryville.ca.mail.comcast.net> Hi all, I have a very good source for ITO (good quality...I have tried a couple and this is the best) They specialize in transparent conductive films. Check out their website. www.advancedfilmservices.com also quote at advancedfilmservices.com 828 Charcot Ave. San Jose, Ca 95131 408-321-8879 ----- Original Message ----- From: "Han-Bo-Ram Lee" To: labmembers at snf.stanford.edu Sent: Wednesday, January 26, 2011 4:54:01 PM Subject: ITO deposition Hi all, Is there anyone know about available ITO deposition by sputtering? It's not matter that the chamber is in a lab or from company service. Thanks in advance. Boram Han-Bo-Ram Lee, Ph.D Bent Research Group Department of Chemical Engineering Stanford University Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 Email : sixram[at] stanford.edu or sixram[at] gmail.com WWW : bentgroup.stanford.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From sergei at scipp.ucsc.edu Wed Jan 26 17:55:51 2011 From: sergei at scipp.ucsc.edu (Sergei Kachiguin) Date: Wed, 26 Jan 2011 17:55:51 -0800 Subject: ITO deposition In-Reply-To: References: Message-ID: <4D40D0A7.1010809@scipp.ucsc.edu> You might want to check the TFD. We've been using their facilities several times with good results. http://www.tfdinc.com/ Sergei On 1/26/2011 4:54 PM, Han-Bo-Ram Lee wrote: > Hi all, > > Is there anyone know about available ITO deposition by sputtering? > > It's not matter that the chamber is in a lab or from company service. > > Thanks in advance. > > Boram > > > Han-Bo-Ram Lee, Ph.D > Bent Research Group > Department of Chemical Engineering > Stanford University > > Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA > 94305 > Email : sixram[at]stanford.edu or > sixram[at]gmail.com > WWW : bentgroup.stanford.edu/ -------------- next part -------------- An HTML attachment was scrubbed... URL: From Edwin.Adhiprakasha at invisageinc.com Wed Jan 26 18:08:13 2011 From: Edwin.Adhiprakasha at invisageinc.com (Edwin Adhiprakasha) Date: Wed, 26 Jan 2011 18:08:13 -0800 Subject: ITO deposition In-Reply-To: References: Message-ID: <0B282E3770D15C45AC895C3E63A2A0D8AFA53ABF00@EXVMBX015-2.exch015.msoutlookonline.net> Hi all, You can inquire with Hionix for ITO deposition. Please contact Laurel Vera (her e-mail address is in the cc field). Good luck!! Edwin From: Yihong Chen [mailto:yhngchen at stanford.edu] Sent: Wednesday, January 26, 2011 5:16 PM To: Han-Bo-Ram Lee Cc: labmembers at snf.stanford.edu Subject: Re: ITO deposition Also interested, can you please let me know if you find one? Thanks, -Yihong On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee > wrote: Hi all, Is there anyone know about available ITO deposition by sputtering? It's not matter that the chamber is in a lab or from company service. Thanks in advance. Boram Han-Bo-Ram Lee, Ph.D Bent Research Group Department of Chemical Engineering Stanford University Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 Email : sixram[at]stanford.edu or sixram[at]gmail.com WWW : bentgroup.stanford.edu/ -- Yihong Chen PhD Candidate Department of Chemistry Stanford University ************************************* Lokey Laboratories, RM 229 337 Campus DR Stanford, CA 94305-5080 Phone: (650) 723-1610 Email: yhngchen at stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From hdonglee at stanford.edu Wed Jan 26 22:01:39 2011 From: hdonglee at stanford.edu (Hyung Dong Lee) Date: Wed, 26 Jan 2011 22:01:39 -0800 Subject: EE PhD Defense, Hyung Dong Lee (Wednesday, Feb 9th, 2011, 10:00 am, CISX Auditorium) Message-ID: Stanford University Ph.D. Dissertation Defense Title: "Understanding of NiO-based unipolar resistive switching" Hyung Dong Lee Electrical Engineering Research Advisor: Prof. Yoshio Nishi Data: Wednesday, Feb 9th, 2011 Time: 10:00 am (Refreshments served at 9:45 am) Location: Paul G. Allen Building Auditorium (CISX 101X) Abstract As NAND Flash memory technology is facing challenging issues such as electronic coupling between adjacent cells or high coupling of the control gate with floating gate in scaling down to and beyond 16nm technology node, investigations of new functional devices or materials has been attempted for next-generation memory technology to continue development of memory technology beyond 16 technology generation. One of new emerging non-volatile memories is resistance change random access memory(ReRAM) satisfying the requirements to replace NAND Flash; low cost, simple structure, promising 8nm technology node, low power dissipation, high endurance, possible integration in crossbar arrays in 3D. In ReRAM, understanding the switching mechanism was very complicated because there have been many different switching phenomena in circumstances under ultimate electrical stress. One of them, oxidation/reduction of transition metals is generally accepted for unipolar switching. In this switching phenomenon, both thermal and chemical processes are correlated with the effect of electric field. To suggest clearer understanding of switching mechanism for unipolar switching, defect states in NiO are investigated, which are closely related conductivity in the transition metal-based resistive materials. Setting up feasible "ON" and "OFF" states in atomic scale gave an insight into atomic structure of conductive filament, role of oxygen (or oxygen vacancies) and its migration. With the understandings from first principle simulations, physically quantitative model about reset/retention and filament formation could be suggested. In addition to that, obtained experimental results like reduction of reset current and long retention time of RON due to inserted interfacial layer could be explained based on the quantitative model. -------------- next part -------------- An HTML attachment was scrubbed... URL: From laurel at hionix.com Thu Jan 27 10:17:04 2011 From: laurel at hionix.com (Laurel Vera) Date: Thu, 27 Jan 2011 10:17:04 -0800 Subject: ITO deposition In-Reply-To: <0B282E3770D15C45AC895C3E63A2A0D8AFA53ABF00@EXVMBX015-2.exch015.msoutlookonline.net> References: <0B282E3770D15C45AC895C3E63A2A0D8AFA53ABF00@EXVMBX015-2.exch015.msoutlookonline.net> Message-ID: Hello Yihong! I have been copied on your email thread with Edwin and I understand you have need for ITO. We do have the ability to PVD sputter ITO, please let me know your application requirements, film thickness and substrate sizes and I will be able to supply you a quote and lead time. Please feel free to contact me with any questions you may have. Thank you very much, Laurel Vera Client Operations Hionix, Inc. 2363 Bering Drive San Jose, CA 95131 www.hionix.com Ph: 408-240-7781 Fx: 408-762-4305 On Wed, Jan 26, 2011 at 6:08 PM, Edwin Adhiprakasha < Edwin.Adhiprakasha at invisageinc.com> wrote: > Hi all, > > > > You can inquire with Hionix for ITO deposition. Please contact Laurel Vera > (her e-mail address is in the cc field). Good luck!! > > > > > > Edwin > > > > *From:* Yihong Chen [mailto:yhngchen at stanford.edu] > *Sent:* Wednesday, January 26, 2011 5:16 PM > *To:* Han-Bo-Ram Lee > *Cc:* labmembers at snf.stanford.edu > *Subject:* Re: ITO deposition > > > > Also interested, can you please let me know if you find one? > > > > Thanks, > > > > -Yihong > > > > On Wed, Jan 26, 2011 at 4:54 PM, Han-Bo-Ram Lee > wrote: > > Hi all, > > > > Is there anyone know about available ITO deposition by sputtering? > > > > It's not matter that the chamber is in a lab or from company service. > > > > Thanks in advance. > > > > Boram > > > > > Han-Bo-Ram Lee, Ph.D > Bent Research Group > Department of Chemical Engineering > Stanford University > > Mail : Rm 113, Stauffer III Bldg., 381 North South Mall, Stanford, CA 94305 > Email : sixram[at]stanford.edu or sixram[at]gmail.com > WWW : bentgroup.stanford.edu/ > > > > > -- > Yihong Chen > > PhD Candidate > Department of Chemistry > Stanford University > ************************************* > Lokey Laboratories, RM 229 > 337 Campus DR > Stanford, CA 94305-5080 > Phone: (650) 723-1610 > Email: yhngchen at stanford.edu > > > -- -------------- next part -------------- An HTML attachment was scrubbed... URL: From vijayn at stanford.edu Fri Jan 28 11:25:32 2011 From: vijayn at stanford.edu (Vijay Kris Narasimhan) Date: Fri, 28 Jan 2011 11:25:32 -0800 (PST) Subject: Shipley Microposit S1400 Series Resist Message-ID: <1750297825.588305.1296242732683.JavaMail.root@zm02.stanford.edu> Dear Labmembers, Do any of you currently use this resist or know anyone on campus who does? If so, could you please get in contact with me? I am trying to use this resist as an adhesion layer for PMMA on gallium arsenide, and so any advice you have in this regard would be appreciated, as well. Cheers, Vijay Kris Narasimhan -------------- next part -------------- An HTML attachment was scrubbed... URL: From edmyers at stanford.edu Fri Jan 28 14:57:00 2011 From: edmyers at stanford.edu (Ed Myers) Date: Fri, 28 Jan 2011 14:57:00 -0800 Subject: WVASE32 Short Course Announcement Message-ID: <6.2.5.6.2.20110128140215.055de238@stanford.edu> All, SNF is supporting JA Woollam by host their WVASE32 short course here on campus. This is a great opportunity to learn from the experts and to become an analysis expert. If you are interested in attending, you need to contact JA Woollam directly. Regards, >Date: Fri, 28 Jan 2011 11:29:10 -0600 >From: Veronica Cockerill >Subject: WVASE32 Short Course Announcement > > >Dear J.A. Woollam Customers, > >We would like to invite you to our next WVASE32 Data Analysis >Fundamentals Short Course being held April 5-8 at the Stanford >University in Stanford, California. I have attached a course >description and registration form. If you would like to attend, >please fill out the registration form completely and fax back to me >at +1(402)-477-8214 by March 25, 2011. Once I receive your >registration form, I will send a confirmation email. > >This course will focus on data analysis methods for spectroscopic >ellipsometry with a significant amount of "hands-on" computer time. >For this reason, participants should be familiar with WVASE32 software. > >If you have any questions, please let me know. > >Best regards, >Veronica > >******************************* >Veronica Cockerill >Marketing Coordinator >J. A. Woollam Co., Inc. >645 M Street, Suite 102 >Lincoln, NE 68508 >vcockerill at jawoollam.com >Phone: (402)477-7501 x101 >Fax: (402)477-8214 -------------- next part -------------- A non-text attachment was scrubbed... Name: Short_Course_Reg_Stanford2011.pdf Type: application/pdf Size: 276546 bytes Desc: not available URL: From shott at stanford.edu Sat Jan 29 11:17:55 2011 From: shott at stanford.edu (John Shott) Date: Sat, 29 Jan 2011 11:17:55 -0800 Subject: No temperature/humidity control or air flow in L102 this weekend .... Message-ID: <4D4467E3.70804@stanford.edu> SNF lab members: I've just received notification from FacOps that the transfer fan motor that pushes air into L102 (the svgcoat/svgdev aisle) has shorted out and taken the motor controller with it. As a result, there will be no direct air coming from the HEPA filters in that area. Temperature control, humidity control, and cleanliness are likely to degrade over the weekend. In particular, you should keep a close eye on the temperature and humidity readout in that area if you are conducting critical work. It is too early to know when this system will be back on line, but best case is likely sometime on Monday. Thank you for your support, John From parksg at stanford.edu Mon Jan 31 20:47:04 2011 From: parksg at stanford.edu (Seonggeon Park) Date: Mon, 31 Jan 2011 20:47:04 -0800 (PST) Subject: MSE PhD Defense, Seong-Geon Park (Feb 7th, Monday, 10:30 am, CISX Auditorium) Message-ID: <000d01cbc1cb$08c5be50$1a513af0$@edu> University PhD Dissertation Defense "The study of Resistive Switching Mechanism in TiO2 using First Principles Calculation." Seong-Geon Park Research Advisor: Prof. Yoshio Nishi Monday, Feb 7th, 2011, 10:30 am (Refreshments served at 10:15 am) Location: Paul G. Allen Auditorium (CISX 101) http://cis.stanford.edu/misc/directions.html Abstract Recently the interest in Resistive Random Access Memory (ReRAM) has been significantly increased, as it is now considered as the promising candidate for the next generation of non-volatile memory devices, due to its high density, low operating power, fast switching speed, and compatibility conventional CMOS process. Among many resistance switching materials, TiO2 has been widely studied. However, the most challenging issue is that the underlying switching mechanism is lacking an in-debt understanding. It has been proposed that the resistance switching is strongly coupled to the presence and a preferential distribution of oxygen vacancies involving the formation of a conductive filament. Although many experiments have been done to address the switching mechanism during the last decade, it is hard to figure out what happens in microscopic level. Therefore systematic interpretation about the microscopic details of the role of oxygen vacancies in the formation of a conductive filament is essential. To address the conduction and resistance switching mechanism, the effect of oxygen vacancies on the electronic structures in TiO2 has been investigated using first principle study based on density functional theory. In this talk, I will first discuss "ON"-state (Low Resistance State) conduction mechanism of rutile TiO2 in terms of oxygen vacancies, and then the transition from "ON" to "OFF"-state (High Resistance State) will be demonstrated. Although it is known that TiO2 exhibits n-type semiconducting conductivity with extra electron carriers generated by the formation of oxygen vacancies, "ON" and "OFF"-state conductivity during resistance switching cannot be explained by isolated single oxygen vacancy. I will demonstrate electronic characteristics such as density of states, electron localization function, band decomposed charge density distribution, and energy band structure, and show how they changes by oxygen vacancies. The influence of the number of oxygen vacancies and different configurations of multi vacancies on the resistance change will be discussed. Oxygen vacancy ordering and the diffusion of either vacancy or hydrogen has a significant impact on both the formation of a conductive filament and the transition from "ON" to "OFF"-state. Results from this work suggest "ON"-state conduction and resistance switching modeling that could be described by the formation and rupture of a conductive filament incorporating oxygen vacancy ordered structure. -------------- next part -------------- An HTML attachment was scrubbed... URL: