Correction: Seminar-Nanobridge Technology
duygu at stanford.edu
Fri Jun 3 11:00:02 PDT 2011
Mark your calendars!
Dr. Munehiro Tada
Wednesday, June 8th, 2011, 2 pm
Place: To be announced soon!
Scaling of CMOS devices and interconnects has contributed to high performance and low power operation of ULSI devices. Due to excessive stand-by power accompanying device shrinking, further scaling is experiencing serious roadblocks, and in near future, scaling will certainly face a physical limit of the device dimension. One of the solutions to enhance device performance while keeping the power consumption low is to introduce BEOL devices such as memory, transistor and switch, which are integrated in the interconnect layers without increasing the chip-size. For BEOL devices, a nonvolatile solid-electrolyte switch, NanoBridge (NB) is used. The NB is a switch consisting of a solid-electrolyte sandwiched between an active electrode (Cu) and an inert electrode (Ru). The operation power and stand-by power consumption of a programmable logic device can be greatly improved by using NB-based crossbar switches instead of conventional SRAM-based switches.
In this talk, we propose the embedding of NanoBridge (eNB) structure in Cu interconnects coupled with the thin solid-electrolyte, where the Cu interconnect itself works as a source of bridging ions. We newly developed a forming-free polymer solid-electrolyte (PSE) switch. The switching time and its variations are investigated. An ALU-type programmable unit cell, a 32x32 crossbar switch and a 1k re-programmable cell array are subjected to a practical of the nonvolatile PLD under a 90-nm CMOS. The fundamental operation of the circuit and dynamic power are demonstrated comparing with those of a standard SRAM- based design.
Munehiro Tada received the Ph.D. degree from Keio University in Yokohama, Japan. He joined NEC Corporation, Kanagawa, Japan, in 1999, where he was engaged in the development of ULSI process and device, especially for low-power application specified integrated circuits (ASICs). From 2007 to 2008, he was a visiting researcher at Stanford University, Stanford, CA, for research of germanium transistor and three-dimensional ICs. Currently he is a principal researcher with the Green Innovation Research Laboratories in NEC Corporation, and involved in device technologies for embedding memory and switch devices into the logic devices. His current research interests include nonvolatile resistive switch, memory, multilevel interconnect, and three dimensional ICs for low power and high-performance logic applications.
Dr. Tada is a senior member of the IEEE Electron Devices Society and the Japan Society of Applied Physics. He is a recipient of the 72nd Exhortation Award from the Chemical Society of Japan in 1997.
More information about the labmembers