Regarding metal etching.

Altamash Janjua altamash at snf.stanford.edu
Wed Mar 30 18:58:17 PDT 2011


I think the ability to use the system for pieces would be critical for many
of us.

Thanks,

Altamash

On Wed, Mar 30, 2011 at 2:31 PM, Anu Chandran <chandran at stanford.edu> wrote:

> Hi All,
> This is a question for all who are/will be interested in metal etching. We
> are in the process of nailing down the specs for a new inductively coupled
> plasma metal etcher for SNF.  I would like to solicit input from lab members
> as to what would be critical for them.
> In the wish list we already have the following:
>
> Metals to be etched :
>
>  Au,Ag,Pt, Ti, Cr, Ni, Al
>
> Wafer Size:
> 4" to pieces
>
> Etch depth:
> up to 400nm
>
> Uniformity:
> 5%  over wafer
>
> Roughness:
> Shooting for <5nm rms. Seems like it varies a lot with metals and chemistry
> vs sputter etc.
>
> Profile:
> >85 deg
>
> Selectivity:
> Depends on chemistry and metal. Quite a range
>
> Please go ahead and add whatever you feel is important so that we can try
> to include it in the new system.
>
> Thanks a lot,
> Regards
> Anu
>
> --
> Anu Chandran
> Materials Science & Engineering
> 476 Lomita Mall,McCullough Building
> Stanford CA 94305-4045
> T:6507236466 Lab
> T:6507234874 Office
> F:6507249851
>
>


-- 
Altamash Janjua,

PhD Candidate, Harris Group,
Stanford University.
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