Regarding metal etching.
jprovine at stanford.edu
Wed Mar 30 21:47:01 PDT 2011
on the opposite end of the spectrum from altamash, i would say that getting
a tool incompatible above 4" means you will not be able to handle any
expansion to larger substrates. bringing in a new tool that cannot move
upward seems short-sighted.
to the metals to be etched i'd like to add:
W and Ru
all the other specs look fine. if a vendor wants to present on campus about
their metal RIE capabilities i would like to know and have a chance to see
hear their pitch.
thank you for your efforts on getting the info together.
On Wed, Mar 30, 2011 at 6:58 PM, Altamash Janjua
<altamash at snf.stanford.edu>wrote:
> I think the ability to use the system for pieces would be critical for many
> of us.
> On Wed, Mar 30, 2011 at 2:31 PM, Anu Chandran <chandran at stanford.edu>wrote:
>> Hi All,
>> This is a question for all who are/will be interested in metal etching. We
>> are in the process of nailing down the specs for a new inductively coupled
>> plasma metal etcher for SNF. I would like to solicit input from lab members
>> as to what would be critical for them.
>> In the wish list we already have the following:
>> Metals to be etched :
>> Au,Ag,Pt, Ti, Cr, Ni, Al
>> Wafer Size:
>> 4" to pieces
>> Etch depth:
>> up to 400nm
>> 5% over wafer
>> Shooting for <5nm rms. Seems like it varies a lot with metals and
>> chemistry vs sputter etc.
>> >85 deg
>> Depends on chemistry and metal. Quite a range
>> Please go ahead and add whatever you feel is important so that we can try
>> to include it in the new system.
>> Thanks a lot,
>> Anu Chandran
>> Materials Science & Engineering
>> 476 Lomita Mall,McCullough Building
>> Stanford CA 94305-4045
>> T:6507236466 Lab
>> T:6507234874 Office
> Altamash Janjua,
> PhD Candidate, Harris Group,
> Stanford University.
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