EE PhD Oral Examination
Crystal Rose Kenney
ckenney at stanford.edu
Wed Aug 22 17:40:32 PDT 2012
PhD Dissertation Defense
Exploiting non-linear Arrhenius dependence of diode IV curves to extract Schottky barrier band diagrams
Department of Electrical Engineering
Advisor(s): Prof. Krishna Saraswat and Prof. H.S. Philip Wong
Thursday August 30th 2012
(Refreshments at 9:45 am)
Location: Packard 202
Accurate extraction of Schottky barrier height is imperative to the development of low resistance contacts. An analytical model for current density is proposed that accurately accounts for conduction in the thermionic emission (TE), thermionic field emission (TFE), and field emission (FE) regimes. Use of this model in non-linear regression allows more information to be extracted from diode IVT curves than previously possible. The proposed model uses the Arrhenius non-linear dependence experimental diode IV curves to regress the Schottky barrier height (φB0), steepness factor (E00), and Fermi level (ξ), enabling band diagrams of the measured interfaces to be determined. This model is tested against both simulated interfaces using the tranismission matrix method (TMM) and experimental data. This complete picture of band information allows material interface behavior to be understood more completely, ultimately facilitating more efficient contact engineering.
-------------- next part --------------
An HTML attachment was scrubbed...
More information about the labmembers