Gryphon Sputter Retirement
edmyers at stanford.edu
Wed Feb 8 14:56:36 PST 2012
Time has come to retire another tool from it's long term SNF service.
With the influx of new tools and the characterization of the
Intlvac_sputter, it's time for the Gryphon metal system to vacate it's
space. The Gryphon is being removed from the SNF fab during the
renovation shut-down. The three new PlasmaTherm etchers will be
delivered on Wednesday, Feb. 15th. Two of these etchers (the metal and
dielectric etchers) will be located in the space vacated by the Gryphon
and the old SCT location.
Depositions which have been done in the Gryphon need to be moved to one
of the Intlvac metal systems. The Intlvac_sputter is configured with an
ion source for pre-sputter etch (etch rates >90 Ang/min) and dual AC
depositions (deposition rates of 1 micron/min for Al). The system is
not load lock, so the pumpdown to base is longer taking approximately 2
hours. The wafer carrier is designed to fit 4, four inch wafers (pieces
are allowed) but the wafers are not thermally heat sinked. Depositions
of pure Al at 1 micron/min have displayed more surface roughness than
what was observed in the Gryphon. The Intlvac_sputter characterization
report will soon be posted on the lab members Wiki.
If you have any questions regarding the Intlvac systems please contact
More information about the labmembers