Dry etch PECVD SiO2
ntayebi at stanford.edu
Fri Jun 1 11:45:48 PDT 2012
You'll be fine. I do it routinely.
----- Original Message -----
From: Henry Hong-Yu Chen <hongyuc at stanford.edu>
To: labmembers at snf.stanford.edu
Sent: Fri, 01 Jun 2012 11:44:12 -0700 (PDT)
Subject: Dry etch PECVD SiO2
I plan to etch SiO2 (grown with STS) on the top of Pt (innotec). The
recipe I learned is CHF3/O2 PECVD SiO2 etching on wiki. If I want to
etch ~130nm SiO2, is 1um 3612 enough to for mask? Will the PR become
too hard to strip using aceton after etching?
In addition, I found mrc and drytek4 can do SiO2 etch. Which one gives
the better/steeper profile?
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