From mt.innovate at gmail.com Tue May 1 10:53:16 2012 From: mt.innovate at gmail.com (Mike Tan) Date: Tue, 1 May 2012 10:53:16 -0700 Subject: product demo from keyence Message-ID: Dear Lab Members, Representatives from Keyence will be visiting SNF this Wednesday to demonstrate the capabilities of its fast speed microscope systems. If anyone is interested in seeing or trying out the demo, please contact Chad. The VHX-2000 is the best digital microscope on the market for engineering and industrial applications. Difficult 3-dimensional targets are easily imaged with our incredible depth of field. The versatility of this system extends far beyond the available 0-5000X range of magnification. http://www.keyence.com/products/microscope/microscope/vhx2000/vhx2000.php To fully appreciate this microscope, I like to demonstrate the system in person. It is a quick 30 minute meeting and helps show you what Keyence can offer. If you are interested, give me a call on my cell at 510.999.0455 or reply to this email. Best Regards, Chad Supers Micro Analysis Group Description: Description: Description: Description: cid:image001.gif at 01CB0B97.FB8B9FF0 2603 Camino Ramon, Suite 460 San Ramon, CA 94583 Tel. 1.888.KEYENCE(539-3623)- (Ext.88221 ) Fax: 1-630-285-1316 Cell. 510-999-0455 Email: csupers at keyence.com From ysohn at stanford.edu Tue May 1 23:28:58 2012 From: ysohn at stanford.edu (Young Ik Sohn) Date: Tue, 1 May 2012 23:28:58 -0700 (PDT) Subject: etch rate of low stress Nitride @ STSETCH2 In-Reply-To: <44991772.44815941.1335940052530.JavaMail.root@zm08.stanford.edu> Message-ID: <1336773179.44816233.1335940138050.JavaMail.root@zm08.stanford.edu> Dear labmembers, if anybody know the approximate etch rate of low stress nitride (deposited at tylannitride) at STSETCH2 with standard recipe, please let me know. I just need an approximate number. Thanks. Best regards, Young Ik Sohn From rthowe at stanford.edu Wed May 2 09:53:09 2012 From: rthowe at stanford.edu (Roger T. Howe) Date: Wed, 02 May 2012 09:53:09 -0700 Subject: 2 hours to pizza! seminar on NNIN iWSG Brazil trip with pizza, Allen 101X In-Reply-To: <4F9DB30E.70408@stanford.edu> References: <4F9DB30E.70408@stanford.edu> Message-ID: <4FA16675.5040207@stanford.edu> Just a reminder ... Today's Stanford Nano Society / NNIN seminar and discussion is by Sonia Buckley, Meredith Lee, and Jared Schwede on the their experiences at the NNIN's International Winter School at the University of Campinas (UNICAMP), Campinas, Sao Paulo, Brazil and a second week's stay in a region along the Atlantic coast. The seminar's jointly sponsored by NNIN, which will be adding pizza to the Stanford Nano Society's usual generous order to accommodate the larger crowd. See you there! Roger From mbaran at stanford.edu Wed May 2 10:16:15 2012 From: mbaran at stanford.edu (Maureen Baran) Date: Wed, 2 May 2012 10:16:15 -0700 (PDT) Subject: =?us-ascii?Q?Found_phone_in_the_lab_-_please_come_by_if_it's_yours?= Message-ID: <00a901cd2887$48f45300$dadcf900$@stanford.edu> Dear labmembers, A staff member has found a cell phone in the lab. If you are missing your phone please come by and be prepared to let me know what kind it is. Maureen (cubicle #41) -------------- next part -------------- An HTML attachment was scrubbed... URL: From chenxchi at stanford.edu Wed May 2 13:00:08 2012 From: chenxchi at stanford.edu (Xiaochi Chen) Date: Wed, 2 May 2012 13:00:08 -0700 (PDT) Subject: BCB negative photoresist In-Reply-To: <1310375155.70550405.1335988325368.JavaMail.root@zm06.stanford.edu> Message-ID: <1631144319.70559325.1335988808173.JavaMail.root@zm06.stanford.edu> Dear all Labmembers, I am a graduate student in Prof. James Harris group. We want to purchase some BCB negative photoresist (4022-35 CYCLOTENE - 1 L, $5,385.60) from MicroChem Corp. However, the minimum size they sell is 1 liter, which exceeds our need. We need only about 250mL. I am wondering if any of you are interested in purchasing some BCB so that we can share the cost. Please let me know if you have any interests. -- Sincerely, Xiaochi Chen =========================================================== Department of Electrical Engineering Stanford University, Stanford, California 94305 Email: chenxchi at stanford.edu =========================================================== From hongyuc at stanford.edu Fri May 4 11:57:13 2012 From: hongyuc at stanford.edu (Henry Hong-Yu Chen) Date: Fri, 4 May 2012 11:57:13 -0700 Subject: Pt and TiN etch qestions Message-ID: Dear Lab Members, My colleague and I are trying to etch through the following structures by dryetch (P5000? PQUEST?). I wonder if anyone can share the experience/recipe with us. Both structure are on the top of very thick SiO2. Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) Thanks, Henry From jprovine at stanford.edu Fri May 4 14:02:26 2012 From: jprovine at stanford.edu (J Provine) Date: Fri, 4 May 2012 14:02:26 -0700 Subject: Pt and TiN etch qestions In-Reply-To: References: Message-ID: Henry, Definitely not P5000 because you have gold contaminated material. Pquest can solve your sio2 and TiN film stack. Scott lee has some good info on TiN. There is no RIE for Pt. you will need to sputter etch in mrc or the SNC ion mill. J On Friday, May 4, 2012, Henry Hong-Yu Chen wrote: > Dear Lab Members, > > My colleague and I are trying to etch through the following structures > by dryetch (P5000? PQUEST?). I wonder if anyone can share the > experience/recipe with us. Both structure are on the top of very > thick SiO2. > > Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) > Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) > > Thanks, > Henry > -------------- next part -------------- An HTML attachment was scrubbed... URL: From zhangll.ime at gmail.com Fri May 4 13:19:52 2012 From: zhangll.ime at gmail.com (zhangll.ime at gmail.com) Date: Fri, 4 May 2012 16:19:52 -0400 Subject: Pt and TiN etch qestions In-Reply-To: References: Message-ID: <571D8B82-7C71-428F-BDC4-EC34D1358F48@gmail.com> For Pt RIE etch: Ar: 40sccm, Cl2: 40sccm Pressure: 10mTorr RF pow 50W ECR pow 700W Rate:30nm/min This recipe works at MIT, but i haven't got a chance to try it in out cleanroom. Good luck! Sincerely yours, Liangliang On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen wrote: > Dear Lab Members, > > My colleague and I are trying to etch through the following structures > by dryetch (P5000? PQUEST?). I wonder if anyone can share the > experience/recipe with us. Both structure are on the top of very > thick SiO2. > > Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) > Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) > > Thanks, > Henry From jimkruger at yahoo.com Fri May 4 14:29:48 2012 From: jimkruger at yahoo.com (jim kruger) Date: Fri, 4 May 2012 14:29:48 -0700 (PDT) Subject: Pt and TiN etch qestions In-Reply-To: <571D8B82-7C71-428F-BDC4-EC34D1358F48@gmail.com> References: <571D8B82-7C71-428F-BDC4-EC34D1358F48@gmail.com> Message-ID: <1336166988.60073.YahooMailNeo@web163101.mail.bf1.yahoo.com> If you wish to try this in PQuest at SNF, I strongly recommend (= insist) that you use 5 mTorr pressure.? 10 and above result in a "hard to see" instability that forms a fireball up at the microwave window which has no cooling.? Higher RF? (100 w?) will etch faster, please record the DC bias. Please publish any results. jim ________________________________ From: "zhangll.ime at gmail.com" To: Henry Hong-Yu Chen Cc: "labmembers at snf.stanford.edu" Sent: Friday, May 4, 2012 1:19 PM Subject: Re: Pt and TiN etch qestions For Pt RIE etch: Ar: 40sccm, Cl2: 40sccm Pressure: 10mTorr RF pow 50W ECR pow 700W Rate:30nm/min This recipe works at MIT, but i haven't got a chance to try it in out cleanroom. Good luck! Sincerely yours, Liangliang On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen wrote: > Dear Lab Members, > > My colleague and I are trying to etch through the following structures > by dryetch (P5000? PQUEST?). I wonder if anyone can share the > experience/recipe with us.? Both structure are on the top of very > thick SiO2. > > Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) > Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) > > Thanks, > Henry -------------- next part -------------- An HTML attachment was scrubbed... URL: From wslee at snf.stanford.edu Fri May 4 14:50:27 2012 From: wslee at snf.stanford.edu (Scott Lee) Date: Fri, 4 May 2012 14:50:27 -0700 Subject: Pt and TiN etch qestions In-Reply-To: <1336166988.60073.YahooMailNeo@web163101.mail.bf1.yahoo.com> References: <571D8B82-7C71-428F-BDC4-EC34D1358F48@gmail.com> <1336166988.60073.YahooMailNeo@web163101.mail.bf1.yahoo.com> Message-ID: Henry, I've done Pt etching in MRC and in the ion mill. Here is the Pt recipe I use in mrc (from Mary C.) Ar=12.5sccm Press=12.5 RF=100W etch rate ~10nm/min I also do TiN etching in both pquest and p5000. Here is the pquest recipe I use: BCl3: 40 sccm; Cl2: 10 sccm; Ar: 10 sccm; Pressure: 5 mtorr; ECR power: 500 W; RF power: 60 W. I need to double check the etch rate but I think it's about 10nm/min as well. Scott I etch 500A Pt for 5.5 min, and 1000A Pt for 11:00 min using the following recipe: Ar=12.5 sccm, Press=12.5, RF= 100 watts, PV=660 volts. You will always get redeposition of Pt on side walls of your structure, and a fence where the photo resist was. The redeposition of side walls you can't do anything about but the fence can be avoided by using a PECVD STS SIO2 hardmask of 250A with an 80% OE for 1min 10 seconds using the following recipe O2=2.0 sccm, CHF3=15.0 sccms, press=50, RF=50 watts, PV=360 volts remove photo resist then etch Pt. You don't want to use hardmask if are doing electrical measurements. I have no problems etching Pi. I hop you find this information usefull. Mary On Fri, May 4, 2012 at 2:29 PM, jim kruger wrote: > If you wish to try this in PQuest at SNF, I strongly recommend (= insist) > that you use 5 mTorr pressure. 10 and above result in a "hard to see" > instability that forms a fireball up at the microwave window which has no > cooling. > Higher RF (100 w?) will etch faster, please record the DC bias. > > Please publish any results. > > jim > > ------------------------------ > *From:* "zhangll.ime at gmail.com" > *To:* Henry Hong-Yu Chen > *Cc:* "labmembers at snf.stanford.edu" > *Sent:* Friday, May 4, 2012 1:19 PM > *Subject:* Re: Pt and TiN etch qestions > > For Pt RIE etch: > > Ar: 40sccm, > Cl2: 40sccm > Pressure: 10mTorr > RF pow 50W > ECR pow 700W > Rate:30nm/min > > This recipe works at MIT, but i haven't got a chance to try it in out > cleanroom. > > Good luck! > > Sincerely yours, > Liangliang > > On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen > wrote: > > > Dear Lab Members, > > > > My colleague and I are trying to etch through the following structures > > by dryetch (P5000? PQUEST?). I wonder if anyone can share the > > experience/recipe with us. Both structure are on the top of very > > thick SiO2. > > > > Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) > > Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) > > > > Thanks, > > Henry > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From mcvittie at stanford.edu Fri May 4 15:08:46 2012 From: mcvittie at stanford.edu (Jim McVittie) Date: Fri, 4 May 2012 15:08:46 -0700 (PDT) Subject: Pt and TiN etch qestions In-Reply-To: <1336166988.60073.YahooMailNeo@web163101.mail.bf1.yahoo.com> Message-ID: <113076063.73281225.1336169326206.JavaMail.root@zm06.stanford.edu> Henry, The Pt etching process which came with the PQ is as follows: 10C, 30sccm Ar, 10 sccm Cl2, 1.0 mT, 600w uw power, -300V bias, 10T backside He Pt etch rate of 450A/min, PR rate of 950A/min. 1 mT is a bit low for our tool. A high bias voltage above 150V is critical for a sputter etch bias. You will not get a higher enough voltage at 50 W of bias power. Because a modification to wafer clamp mechanism done years ago, it is difficult to get high bias voltages on our tool, and if you try by using high bias powers, you will likely damage the springs in the clamp mechanism. Another comment is that lower pressure give higher bias voltages. Jim ----- Original Message ----- From: "jim kruger" To: "zhangll ime" , "Henry Hong-Yu Chen" Cc: labmembers at snf.stanford.edu Sent: Friday, May 4, 2012 2:29:48 PM Subject: Re: Pt and TiN etch qestions If you wish to try this in PQuest at SNF, I strongly recommend (= insist) that you use 5 mTorr pressure. 10 and above result in a "hard to see" instability that forms a fireball up at the microwave window which has no cooling. Higher RF (100 w?) will etch faster, please record the DC bias. Please publish any results. jim From: "zhangll.ime at gmail.com" To: Henry Hong-Yu Chen Cc: "labmembers at snf.stanford.edu" Sent: Friday, May 4, 2012 1:19 PM Subject: Re: Pt and TiN etch qestions For Pt RIE etch: Ar: 40sccm, Cl2: 40sccm Pressure: 10mTorr RF pow 50W ECR pow 700W Rate:30nm/min This recipe works at MIT, but i haven't got a chance to try it in out cleanroom. Good luck! Sincerely yours, Liangliang On May 4, 2012, at 2:57 PM, Henry Hong-Yu Chen < hongyuc at stanford.edu > wrote: > Dear Lab Members, > > My colleague and I are trying to etch through the following structures > by dryetch (P5000? PQUEST?). I wonder if anyone can share the > experience/recipe with us. Both structure are on the top of very > thick SiO2. > > Top/Bottom => 50nm SiO2 (STS) / 30nm Pt (innotec) > Top/Bottom => 50nm SiO2 (STS) / 80nm TiN (AJA) > > Thanks, > Henry From mtang at stanford.edu Fri May 4 22:09:33 2012 From: mtang at stanford.edu (Mary Tang) Date: Fri, 04 May 2012 22:09:33 -0700 Subject: Etch Area Update Message-ID: <4FA4B60D.7020106@stanford.edu> Hi all -- Two steps forward, one step back... STSetch2: Delivery on the repaired and updated RF generator was delayed. It arrived Wednesday and so was installed yesterday. Elmer and Jim have been working on it since --there appears to be a communication problem between it and the STS system. There are some clues that Elmer will follow up on with both STS and MKS (who service the generator) on Monday. If these don't pan out quickly, Elmer has a lead on an immediately available, STS-warranted replacement generator, He has also arranged to have STS send the first-available field service engineer, tentatively next week. Lampoly: The faulty generator was repaired, calibrated, and shipped by FedEx today (shipping was delayed, as we'd hoped it would arrive today.) It will arrive Monday. Installation and functional testing should be fairly quick. The gang is also working on ensuring that the repairable spares we have are documented and sent out for service as needed, so we will not be nailed by lack of a functional spare generator. Again, thanks for your patience -- Team Etch From mahnaz at stanford.edu Mon May 7 08:56:33 2012 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Mon, 07 May 2012 08:56:33 -0700 Subject: Process clinic Message-ID: <4FA7F0B1.5070708@stanford.edu> Hello all, we like to let you know that process clinic will start on alternate Thursdays at 10 am. This is to answer any process questions or concerns our labmembers have and we would like to encourage Senior labmembers participation. First session will be on *5/17th at 10 am out side my office in cubical areas. Yes, *the boxes are gone and the couch is back to its original home. mahnaz * * -------------- next part -------------- An HTML attachment was scrubbed... URL: From cmcg at stanford.edu Mon May 7 16:44:59 2012 From: cmcg at stanford.edu (Christopher McGuinness) Date: Mon, 7 May 2012 16:44:59 -0700 Subject: Fwd: University PhD Dissertation Defense of Christopher Michael McGuinness In-Reply-To: References: Message-ID: Department of Applied Physics University PhD Dissertation Defense Particle Accelerator on a Chip: Fabrication and Characterization of a Three-Dimensional Photonic Crystal Accelertor Christopher Michael McGuinness Research Advisor: Professor Robert Byer Friday, May 11, 2012 @10:00 A.M. Location: Allen Building (Formerly CIS-X), Room 101 ABSTRACT Charged particles are currently accelerated by microwave radiation generated in large klystrons. This is very reminiscent of vacuum tube diodes on which early computers relied. Can particle accelerator technology follow the shift that drove the semiconductor industry from vacuum tubes to solid state devices? Can particle accelerators benefit from the high energy density provided by lasers at optical and infrared wavelengths? Can dielectric materials replace the metallic waveguides allowing us to utilize the high peak powers available in lasers today? In making this jump from microwave to infrared wavelengths, a decrease of 10,000 times in wavelength, entirely new fabrication technologies are needed. And entirely new physics must be applied in transitioning from metals to dielectrics. This talk will focus on the fabrication of photonic crystals designed for accelerating electrons. You will be introduced to a process for fabricating a three dimensional photonic crystal; the woodpile structure, designed to operate at mid-infrared wavelengths in the three to five micron range. Preliminary characterization of these structures was performed using Fourier transform infrared spectroscopy, and comparison with simulations show good agreement when the structure parameters are modeled appropriately. Attempts have been made to couple light from a tunable optical parametric oscillator into a waveguide designed to support an accelerator mode. Finally, an alternative fabrication approach has been pursued at the University of Karlsruhe in Germany based on direct laser writing. FTIR measurements show the first signs of a defect mode in one of these structures. Simulations were performed to analyze these measurements. -------------- next part -------------- An HTML attachment was scrubbed... URL: From cachang at stanford.edu Mon May 7 21:56:00 2012 From: cachang at stanford.edu (Chia-Ming Chang) Date: Mon, 7 May 2012 21:56:00 -0700 (PDT) Subject: Special Seminar - Dr. Sami Hendow, Monday May 14, 6:30PM, GCC (Please RSVP, Pizza will be served) In-Reply-To: <1352633946.67223794.1335722116984.JavaMail.root@zm06.stanford.edu> Message-ID: <1447201763.75695917.1336452960696.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by NATEA (North America Taiwanese Engineering & Science Association) and the Stanford Optical Society ? ? Micromachining with Nanosecond and Femtosecond Pulsed Lasers ? Dr. Sami Hendow ? Date : Monday, May 14, 6:30 PM Venue : Graduate Community Center (750 Escondido Road, Stanford, CA 94305) Agenda : 6:30 - 7:00 PM: Registration and Social Networking (Pizza will be served) 7:00 - 8:15 PM: Presentation including Q&A Fee : Free for members of NATEA and the Stanford Optical Society with RSVP $5.00 for non-members with RSVP $10 for all without RSVP RSVP:? http://goo.gl/dXPht (contact: borchyuan at gmail.com or cachang at stanford.edu) Please RSVP prior to May 13 (Pizza will be served) ? Abstract Laser-material interactions using pulses that are nsec in durations or longer are dominated by thermal time constants. Ultrashort pulses, on the other hand, undergo a much faster photon-electron energy transfer where pulse energy is deposited at a rate much faster than the material's thermal time constant. We will show examples of micromachining of metal, silicon and ceramics using nsec pulses, and outline the effects of change of peak power, pulse energy and pulse width. We will also extend this discussion to oxide formation on the surface, as well as bursting where pulses are broken into short but rapidly deposited pulses. These effects will be contrasted when the micromachining operation is performed using psec and fsec ultrafast pulses. ? About the speaker ?????? Sami Hendow is an independent consultant. Recently, he was with Multiwave Photonics as Sr. Director responsible for Engineering and Application Development. Prior to that he was Engineering Program Manager with Spectra-Physics developing solid state and fiber amplified lasers. Before that, he was Sr. Scientist at Northrop Grumman working on the qualification of fiber lasers and power scaling by coherent beam combining of fiber laser arrays. Over the last 25 years, he has developed several products and has published about sixty articles and patents related to lasers and photonics technologies. Sami has a PhD in Optical Sciences from the University of Arizona. He is Chair of 2013 Fiber Lasers Conference, SPIE Photonics West, and member of conference program committees of the SPIE's Laser Applications in Microelectronic and Optoelectronic Manufacturing, and LIA's Laser Microprocessing Conference, ICALEO. http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Seminar_Hendow.pdf Type: application/pdf Size: 28720 bytes Desc: not available URL: From jmeyer at stanford.edu Tue May 8 10:23:30 2012 From: jmeyer at stanford.edu (Meyer, Jeannie) Date: Tue, 8 May 2012 10:23:30 -0700 Subject: Nano@Stanford Open House Message-ID: <4808BF690F321E43B82BB0803602B4A301D1D6C7@soe-exchmb01.stanford.edu> Please join colleagues and friends in the Nano community for a celebration and open house for the SNF, SNC and SNL on Friday, June 1, from 4:00-6:30 p.m. See the attached flyer for details. Please email me at jmeyer at stanford.edu if you're planning to come. Regards, Jeannie Meyer Special Events Manager, Stanford Engineering Huang Engineering Center, Suite 131 475 Via Ortega, MC 4027 Stanford, CA 94305-4121 (650) 736-2244 -------------- next part -------------- A non-text attachment was scrubbed... Name: Stanford.Nano.OpenHouse.June1.pdf Type: application/pdf Size: 681824 bytes Desc: Stanford.Nano.OpenHouse.June1.pdf URL: From jwb2005 at stanford.edu Tue May 8 16:22:31 2012 From: jwb2005 at stanford.edu (John Bumgarner) Date: Tue, 08 May 2012 16:22:31 -0700 Subject: SNF User informal meeting - forward please In-Reply-To: <4FA998C0.5010502@stanford.edu> References: <4FA998C0.5010502@stanford.edu> Message-ID: <4FA9AAB7.4050806@stanford.edu> Hello to all SNF users, I am holding an informal lab users meeting on May 17th at 10 -11 am in room 338X in the Allen Annex. Agenda: Lab info post renovation Lab issues update User Advisory Committee New fees review SNC/SNL info Please attend if you have an interest. The room is smaller than the auditorium, which was booked, so we may be a bit crowded, but we will make do. Regards, John _____________________ John Bumgarner Operations Director SNF jwb2005 at stanford.edu From jwb2005 at stanford.edu Tue May 8 16:43:02 2012 From: jwb2005 at stanford.edu (John Bumgarner) Date: Tue, 08 May 2012 16:43:02 -0700 Subject: SNF Rates 2012 Message-ID: <4FA9AF86.6030509@stanford.edu> Dear all SNF users: Back in February, we announced to a join faculty-industry meeting that we would be changing our rates in 2012. Initially, we had planned on March 1 to implement the changes, but due to our desire to generate some post-renovation-shutdown data, I delayed the implementation. It is now set for June 1, based on the rates in the attached pdf. They will also shortly be posted on the SNF web site by Mary Tang. Basic summary is that we are reducing our initial hourly rates and increasing the cap and, proportionally, the hours to reach the cap. This will reduce the entry level costs for new users and place a bit higher cost burden on those users who use us a lot. The industrial rates shift with the existing proportion to academic rates. The SBIR-industry discount has been slightly reduced from 30% to 20% of the industry rate, to match the offset we are receiving via the NNIN program funded by NSF. Three specific tools are staying at the pre-change rate ($92.20/hr): ASML, Raith, AMAT Epi. And finally, the rate beyond upper limit of the cap, which is unchanged at 160 hrs, is moving from 10% of the base rate to 25% of the base rate. We hope this will allow us to provide better services to our customers. We recognize that cost increases are hard to deal with in today's financial situation as we are dealing with those same issues in terms of our costs. In addition to make SNF more attractive to new users, this does help us offset a couple of years of no COLA increase in rates plus allow us to add some additional benefits, one of which we have a quote for is a service contract to support the AMAT Epi tool, which has been a headache to a number of important SNF users. Regards, John ____________________ John Bumganer, PhD Operations Director SNF jwb2005 at stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: SNF Rates 2012.pdf Type: application/pdf Size: 30694 bytes Desc: not available URL: From wslee at stanford.edu Wed May 9 17:12:15 2012 From: wslee at stanford.edu (Scott Lee) Date: Wed, 9 May 2012 17:12:15 -0700 Subject: MAKE: Hardware Innovation Workshop, 50% education discount Message-ID: Hi all, Make magazine will be hosting a hardware innovation workshop next week. Make has offered a 50% education discount that you can get from following this link: http://make-hardware-innovation-workshop.eventbrite.com/?discount=12WHIWedu Enjoy, Scott View in browser . [image: O'Reilly]MAKE Magazine, a division of O'Reilly Media [image: Hardware Innovation Workshop - Presented by Make - May 15-16, 2012] MAKE magazine hosts an inspired conversation and curated tour of the unique culture, enabling technologies, and innovations of the maker movement. Join 300 of your peers: market influencers and thought-leaders: Web and technology innovators, IT leaders, Fortune 500 companies, brand strategists, industrial designers, investors, startup incubators, and analysts whose businesses and vested interests may be the first beneficiaries of these innovations. Mark your calendars for this premiere event: - Meet the makers (and their companies) at the forefrontof the maker movement - Experience the new products, technologies, and processes based on most promising hardware innovation - Join the conversation about the next wave of innovation destined to have sweeping impact - Connect with the thought-leaders and market framers who identify and track emerging technology and innovation trends [image: Dale Dougherty][image: Tim O'Reilly] Hosted by Dale Dougherty, Founder and Publisher of MAKE, the first magazine devoted to celebrating the community of individuals who create, build, design, tinker, hack, and invent, and Tim O'Reilly, Founder & CEO of O'Reilly Media. [image: View Workshop Details] Join MAKE for its inaugural business event! Space is limited. Ticket Package Also Includes: 2 Maker Faire Day Passes plus 1 year subscription to MAKE. [image: Get Your Workshop Ticket Today] ------------------------------ [image: Bloomberg Businessweek] The Maker Movement Meets the VCs "[The maker movement is] as significant as the shift from agriculture to the early industrial era." ? Jeremy Rikin, Wharton economist. Bloomberg Business Week, 2/16/12 ------------------------------ You are receiving this email because you signed up to receive announcements about products and promotions from O'Reilly Media. To ensure delivery to your inbox (not bulk or junk folders), please add *oreilly at post.oreilly.com* to your address book. To manage your preferences or unsubscribe, visit our Email Subscription Center . *Forward this announcement to a friend* . O'Reilly Media, Inc. 1005 Gravenstein Highway North, Sebastopol, CA 95472 (707) 827-7000 -------------- next part -------------- An HTML attachment was scrubbed... URL: From lizj at stanford.edu Thu May 10 10:48:28 2012 From: lizj at stanford.edu (Zijian Li) Date: Thu, 10 May 2012 10:48:28 -0700 (PDT) Subject: PhD Oral Examination - Zijian Li, Tuesday May 15, 9:30 AM, CIS-X 101 In-Reply-To: <691019542.89354597.1336668161683.JavaMail.root@zm08.stanford.edu> Message-ID: <1877724485.90027963.1336672108852.JavaMail.root@zm08.stanford.edu> University Ph.D. Dissertation Defense Thermal Conduction Phenomena in Nanostructured Semiconductor Devices and Materials Zijian Li Advisor: Prof. Kenneth E. Goodson Department of Mechanical Engineering Tuesday, May 15 th , 2012 9:30 AM (Refreshments at 9:15 AM) Paul G. Allen Auditorium ( CIS-X 101) http://campus-map.stanford.edu/index.cfm?ID=04-055 Abstract Thermal phenomena have become increasingly important in a variety of nanostructured semiconductor devices and materials. The reduced dimensions and large interface densities lead to unique heat transfer behaviors which are not available in bulk materials. Successful design of high-performance semiconductor devices (such as phase change memory and high electron mobility transistors) relies on the accurate thermal characterization of thin film materials and the understanding of nanoscale energy transport physics. The first part of this work investigates the thermal conduction phenomena in phase change memory (PCM). A combination of the frequency-domain electrical thermometry and the suspended microstructure measure the in- and out-of-plane thermal conductivities of the thin-film phase change chalcogenide Ge 2 Sb 2 Te 5 in the amorphous, fcc, and hcp phases. The preferential grain orientation and mixed phase distribution lead to a reduced in-plane thermal conductivity that is only 60%-80% of the out-of-plane value. The anisotropic heat conduction benefits PCM devices by reducing the programming current and mitigating the thermal disturbance to adjacent cells. A fully coupled electrothermal simulation algorithm unveils the transient phase distribution during a programming operation. The second half of the talk discusses the thermal transport across interfaces of drastically different materials with dimensions of only a few nanometers, such as the Mo/Si multilayers (2.8nm/4.1nm) used in the mirror systems for extreme ultraviolet lithography. Strong anisotropy in the thermal conductivities exists in the multilayers, where the in-plane conductivity is 13 times higher than the out-of-plane value, owing to the frequent metal-semiconductor interfaces. Thermal conduction in such periodic multilayer composites can be strongly influenced by nonequilibrium electron-phonon scattering for periods shorter than the relevant free paths. This work demonstrates that two additional mechanisms ? quasi-ballistic phonon transport normal to the metal film and inelastic electron-interface scattering ? can also impact conduction in metal-dielectric multilayers with period below 10 nm. -------------- next part -------------- An HTML attachment was scrubbed... URL: From cachang at stanford.edu Thu May 10 22:10:39 2012 From: cachang at stanford.edu (Chia-Ming Chang) Date: Thu, 10 May 2012 22:10:39 -0700 (PDT) Subject: [Reminder] Special Seminar - Prof. Ci-Ling Pan (National Tsing Hua University, Taiwan), Friday May 11, 4:15PM, CISX 101 In-Reply-To: <1365833481.66031737.1335548719342.JavaMail.root@zm06.stanford.edu> Message-ID: <1136434905.79917466.1336713039279.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by the Stanford Optical Society Recent Progress in Photonic-Network-Compatible Sub-THz-wave wireless links at data rate of 20 Gb/s ? Prof. Ci-Ling Pan National Tsing Hua University, Taiwan Friday, May 11, 4:15 PM, CISX 101 Auditorium Refreshments at 4PM ? ? To meet the rapidly growing demand of gigabits wireless access applications, sub-THz or millimeter wave (MMW) carriers in W-band (75-110 GHz) or above are essential for obtaining the necessary broad transmission bandwidth. Thanks to the almost unlimited bandwidth and very low propagation loss in optical fiber, radio-over-fiber (RoF) communication system is now an efficient and cost-effective way to distribute synchronized photonic MMW signals from the central office to multiple base stations. In this talk, we will review our recent work on Photonic Wireless communication Link at 100 GHz or 0.1 THz. Key technologies are photonic MMW sources and photonic MMW transmitters will be described. ? Wireless data transmission at a data rate beyond 20-Gb/s via bias modulation of such novel device has been successfully achieved for both downlink and uplink. We have also demonstrated an optical ultra-wide band Impulse-Radio Fiber-to-the-antenna (UWB-IR FTTA) system for in-building and in-home applications, operating from 75 to 110 GHz. About the speaker Ci-Ling Pan is Tsing Hua Chair Professor, Chairperson of the Department of Physics and Institute of Astronomy, National Tsing Hua University (NTHU), Hsinchu, Taiwan. He also held joint appointment at the Institute of Photonics Technologies and served as Director of the Photonics Research Center of NTHU. Prof. Pan taught at National Chiao Tung University, Taiwan, 1981-2009. He also held visiting professorship at Osaka University and Chinese University of Hong Kong in 2004 and 2008, respectively. In the past decade, the main foci of Prof. Pan?s research activities have been Ultrafast and THz Photonics. Recent research highlights include developments of functional liquid crystal THz photonic devices, femtosoeocnd-laser recrystallization and activation of silicon as well as novel THz generators and detectors. The latter were used in diverse applications such as diagnostics of technologically important materials for photovoltaics, assessing burn trauma and optical-network-compatible W-band (100 GHz or 0.1 THz) wireless communication Link at a data rate beyond 20 Gbit/s. Prof. Pan is a Fellow of APS, IEEE, OSA, and SPIE. ? http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Seminar_Pan.pdf Type: application/pdf Size: 48008 bytes Desc: not available URL: From jpelc at stanford.edu Thu May 10 23:31:38 2012 From: jpelc at stanford.edu (Jason Pelc) Date: Thu, 10 May 2012 23:31:38 -0700 Subject: University PhD Dissertation Defense of Jason Scott Pelc In-Reply-To: <640B2E95-9276-4F08-8C22-1074F03D7C4A@stanford.edu> References: <640B2E95-9276-4F08-8C22-1074F03D7C4A@stanford.edu> Message-ID: <4FACB24A.9000803@stanford.edu> -------- Original Message -------- Subject: Re: University PhD Dissertation Defense of Jason Scott Pelc Date: Thu, 10 May 2012 11:44:17 -0700 From: Claire Nicholas To: apgradstudents at lists.stanford.edu, apfaculty at lists.stanford.edu Department of Applied Physics University PhD Dissertation Defense Frequency Conversion of Single Photons: Physics, Devices, and Applications Jason Scott Pelc Research Advisor: Professor Martin Fejer Monday, May 14, 2012 @ 2:00 PM Location: Allen Building, (Formerly CIS-X), Room 101 ABSTRACT The ability to manipulate the carrier frequency of quantum states of light, through a process that has been termed quantum frequency conversion (QFC), has numerous applications for both technology and basic science.For example, one can upconvert a single-photon-level signal in the 1550-nm telecommunications band (where single-photon detection has been challenging) to a visible wavelength to take advantage of well-developed single-photon detectors based on silicon avalanche photodiodes.On the more fundamental side, the manipulation of a single photon?s frequency may enable the construction of networks of dissimilar quantum systems, whereby one can imagine generating many-body entangled quantum states over vast distances. Quantum frequency conversion will only be useful if it can be done both efficiently and with little added noise.The use of periodically poled lithium niobate waveguides has enabled conversion efficiencies exceeding 99.99%, with as little as 100 mW of pump power.Noise has been a far thornier issue: the generation of noise photons, due to inelastic scattering of light from the strong pump laser used to drive the frequency conversion, has limited the utility of QFC devices in many applications.I have analyzed the two primary noise processes in QFC devices (spontaneous Raman scattering and spontaneous parametric fluorescence), and offer solutions on how they may be either mitigated or avoided completely.I will also discuss applications of QFC to low-noise and high-speed telecom-band single-photon detection via upconversion, and the demonstration of a temporally shaped telecom-band single-photon source based on downconversion of light from a single InAs/GaAs quantum dot. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- --++**==--++**==--++**==--++**==--++**==--++**==--++**== apgradstudents mailing list apgradstudents at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/apgradstudents From edmyers at stanford.edu Fri May 11 08:46:00 2012 From: edmyers at stanford.edu (Ed Myers) Date: Fri, 11 May 2012 08:46:00 -0700 Subject: EE410 Update 5/11/12 and Probe Station Move Message-ID: <4FAD3438.4040902@stanford.edu> All, Next week (May 14th) is the final week for the EE410 class in the fab. The final week is metal etch, hence all the reservations on the P5000. Beginning the week of May 21st the students will move to the Micromanipulator probe station. The amount of testing required is very significant and they will dominate the system for a couple of weeks. Remember the EE410 class will have priority over all other access to the probe station. In preparation for the EE410 class, the micromanipulator will once again be relocated. On Monday May 14 the system will be moved out of the office and in to the newly completed nSil lab. There will be a couple of minor changes associated with the move. For example, the wafer chuck vacuum will be a small pump which you will need to turn off and on. Regards, SNF Staff From gsosa at stanford.edu Fri May 11 14:56:57 2012 From: gsosa at stanford.edu (Gary J Sosa) Date: Fri, 11 May 2012 14:56:57 -0700 (PDT) Subject: New oven in Litho area In-Reply-To: <863335759.105288456.1336772546114.JavaMail.root@zm08.stanford.edu> Message-ID: <308986058.105454538.1336773417058.JavaMail.root@zm08.stanford.edu> Hello labmembers.... The new oven that replaces the old "White Oven" in Litho is installed, tested and ready for use. It is a Cascade-TEK TFO-1 forced air oven and it is in the same place as the old oven. The oven is very simple to use and there are operating instructions posted on the oven door. Users can set a specific temperature up to 250 degrees C, following the posted instructions. Please follow the same policies and procedures as the old oven and do not hesitate to contact us if you have any question or concerns. Thanks... The Litho Team From cachang at stanford.edu Fri May 11 15:42:50 2012 From: cachang at stanford.edu (Chia-Ming Chang) Date: Fri, 11 May 2012 15:42:50 -0700 (PDT) Subject: [Reminder] Special Seminar - Prof. Ci-Ling Pan (National Tsing Hua University, Taiwan), Friday May 11, 4:15PM, CISX 101 In-Reply-To: <1136434905.79917466.1336713039279.JavaMail.root@zm06.stanford.edu> Message-ID: <1409071610.80630545.1336776170860.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by the Stanford Optical Society Recent Progress in Photonic-Network-Compatible Sub-THz-wave wireless links at data rate of 20 Gb/s Prof. Ci-Ling Pan National Tsing Hua University, Taiwan Friday, May 11, 4:15 PM, CISX 101 Auditorium Refreshments at 4PM To meet the rapidly growing demand of gigabits wireless access applications, sub-THz or millimeter wave (MMW) carriers in W-band (75-110 GHz) or above are essential for obtaining the necessary broad transmission bandwidth. Thanks to the almost unlimited bandwidth and very low propagation loss in optical fiber, radio-over-fiber (RoF) communication system is now an efficient and cost-effective way to distribute synchronized photonic MMW signals from the central office to multiple base stations. In this talk, we will review our recent work on Photonic Wireless communication Link at 100 GHz or 0.1 THz. Key technologies are photonic MMW sources and photonic MMW transmitters will be described. Wireless data transmission at a data rate beyond 20-Gb/s via bias modulation of such novel device has been successfully achieved for both downlink and uplink. We have also demonstrated an optical ultra-wide band Impulse-Radio Fiber-to-the-antenna (UWB-IR FTTA) system for in-building and in-home applications, operating from 75 to 110 GHz. About the speaker Ci-Ling Pan is Tsing Hua Chair Professor, Chairperson of the Department of Physics and Institute of Astronomy, National Tsing Hua University (NTHU), Hsinchu, Taiwan. He also held joint appointment at the Institute of Photonics Technologies and served as Director of the Photonics Research Center of NTHU. Prof. Pan taught at National Chiao Tung University, Taiwan, 1981-2009. He also held visiting professorship at Osaka University and Chinese University of Hong Kong in 2004 and 2008, respectively. In the past decade, the main foci of Prof. Pan?s research activities have been Ultrafast and THz Photonics. Recent research highlights include developments of functional liquid crystal THz photonic devices, femtosoeocnd-laser recrystallization and activation of silicon as well as novel THz generators and detectors. The latter were used in diverse applications such as diagnostics of technologically important materials for photovoltaics, assessing burn trauma and optical-network-compatible W-band (100 GHz or 0.1 THz) wireless communication Link at a data rate beyond 20 Gbit/s. Prof. Pan is a Fellow of APS, IEEE, OSA, and SPIE. http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From toecutter4ranger at gmail.com Fri May 11 17:39:18 2012 From: toecutter4ranger at gmail.com (ToeCutter) Date: Fri, 11 May 2012 17:39:18 -0700 Subject: New oven in Litho area In-Reply-To: <308986058.105454538.1336773417058.JavaMail.root@zm08.stanford.edu> References: <308986058.105454538.1336773417058.JavaMail.root@zm08.stanford.edu> Message-ID: Hi Gary Thanks for setting this up. Is this oven purging with N2 or just a ambient air oven? Is there a default set temp for this oven for optical lith resist or should it be turned off after each use? Have a nice weekend, James On May 11, 2012, at 2:56 PM, Gary J Sosa wrote: > Hello labmembers.... > > The new oven that replaces the old "White Oven" in Litho is > installed, tested and ready for use. It is a Cascade-TEK TFO-1 > forced air oven and it is in the same place as the old oven. The > oven is very simple to use and there are operating instructions > posted on the oven door. Users can set a specific temperature up to > 250 degrees C, following the posted instructions. Please follow the > same policies and procedures as the old oven and do not hesitate to > contact us if you have any question or concerns. > > Thanks... The Litho Team From jaehlee at stanford.edu Fri May 11 18:18:03 2012 From: jaehlee at stanford.edu (Jae Hyung Lee) Date: Fri, 11 May 2012 18:18:03 -0700 Subject: imtec sapphire etching system for SNF small tool upgrade Message-ID: Dear Labmembers, I am interested to know if there is interest in sapphire wet etch. Since sapphire wet etch requires hot temperatures (> 200C), it's currently not allowed to do this process in SNF. I would like to propose imtec sapphire etching system for SNF small tool upgrade if there are enough SNF users who are interested in this process. Since this system can be functional with a range of times and temperatures, it can also be used for other chemistries/processes that are compatible with quartz. Gold contaminated nitride wet etch is another example that I can think of beside sapphire wet etch. Please let me know if you have any questions or want to express your interest in using this equipment. Thank you very much! Sincerely, Jae Hyung Lee -------------- next part -------------- An HTML attachment was scrubbed... URL: From cachang at stanford.edu Fri May 11 21:18:15 2012 From: cachang at stanford.edu (Chia-Ming Chang) Date: Fri, 11 May 2012 21:18:15 -0700 (PDT) Subject: Special Seminar - Dr. Sami Hendow, Monday May 14, 6:30PM, GCC (Please RSVP prior to Sunday evening, Pizza will be served) In-Reply-To: <1447201763.75695917.1336452960696.JavaMail.root@zm06.stanford.edu> Message-ID: <99196500.80812998.1336796295137.JavaMail.root@zm06.stanford.edu> Special Seminar Presented by NATEA (North America Taiwanese Engineering & Science Association) and the Stanford Optical Society ? ? Micromachining with Nanosecond and Femtosecond Pulsed Lasers ? Dr. Sami Hendow ? Date : Monday, May 14, 6:30 PM Venue : Graduate Community Center (750 Escondido Road, Stanford, CA 94305) Agenda : 6:30 - 7:00 PM: Registration and Social Networking (Pizza will be served) 7:00 - 8:15 PM: Presentation including Q&A Fee : Free for members of NATEA and the Stanford Optical Society with RSVP $5.00 for non-members with RSVP $10 for all without RSVP RSVP:? http://goo.gl/dXPht (contact: borchyuan at gmail.com or cachang at stanford.edu) Please RSVP prior to May 13 (Pizza will be served) ? Abstract Laser-material interactions using pulses that are nsec in durations or longer are dominated by thermal time constants. Ultrashort pulses, on the other hand, undergo a much faster photon-electron energy transfer where pulse energy is deposited at a rate much faster than the material's thermal time constant. We will show examples of micromachining of metal, silicon and ceramics using nsec pulses, and outline the effects of change of peak power, pulse energy and pulse width. We will also extend this discussion to oxide formation on the surface, as well as bursting where pulses are broken into short but rapidly deposited pulses. These effects will be contrasted when the micromachining operation is performed using psec and fsec ultrafast pulses. ? About the speaker ?????? Sami Hendow is an independent consultant. Recently, he was with Multiwave Photonics as Sr. Director responsible for Engineering and Application Development. Prior to that he was Engineering Program Manager with Spectra-Physics developing solid state and fiber amplified lasers. Before that, he was Sr. Scientist at Northrop Grumman working on the qualification of fiber lasers and power scaling by coherent beam combining of fiber laser arrays. Over the last 25 years, he has developed several products and has published about sixty articles and patents related to lasers and photonics technologies. Sami has a PhD in Optical Sciences from the University of Arizona. He is Chair of 2013 Fiber Lasers Conference, SPIE Photonics West, and member of conference program committees of the SPIE's Laser Applications in Microelectronic and Optoelectronic Manufacturing, and LIA's Laser Microprocessing Conference, ICALEO. http://photons.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Seminar_Hendow.pdf Type: application/pdf Size: 28720 bytes Desc: not available URL: From mtang at stanford.edu Fri May 11 21:43:02 2012 From: mtang at stanford.edu (Mary Tang) Date: Fri, 11 May 2012 21:43:02 -0700 Subject: STSetch2 Update Message-ID: <4FADEA56.1040305@stanford.edu> Hi all -- We ask again for your patience... ENI/MKS, the manufacturer of the RF generator, is sending their local field service engineer out to us on Monday to take a look at the generator communications problem. We'd hoped for today, but he asked for a delay in order to confirm some information. If he is unable to resolve the issue, Elmer has arranged for STS to send their field service engineer out here on Tuesday. Elmer has also meanwhile arranged for the purchase of a spare generator. If the STS engineer is unable to resolve the problem with our existing, newly rebuilt & calibrated generator, then he will install the new spare. Our sincere apologies -- documentation and information about this system, which is a prototype, is scarce. I'm sure it's small consolation, but we've also had two inquiries in the past two weeks about our system from two different groups (one university, one big company) with STS etchers experiencing extended downtime. (That said, we've also heard good things about STS systems -- though not our model which had a very limited production run.) We'd have to admit that this is the same plan in our update from last Friday, but delayed -- however, faced with the prospect of $31K to install a new generator, we wanted to give ENI/MKS a few more days. So, we have a plan with two backups and hope to have the system functional again by Wednesday. We will update again as things develop. Thanks for your attention -- Team Etch From alsune at stanford.edu Sun May 13 18:48:36 2012 From: alsune at stanford.edu (Wooshik Jung) Date: Sun, 13 May 2012 18:48:36 -0700 (PDT) Subject: Is Ethylene glycol equivalent to PRS-1000? In-Reply-To: <2114584333.42198790.1336959959057.JavaMail.root@zm03.stanford.edu> Message-ID: <526541920.42199141.1336960116138.JavaMail.root@zm03.stanford.edu> Dear labmembers, When I was trying to replace the PRS-1000 bath with a fresh chemical, I've found that bottles of Ethylene glycol is in the bin where PRS-1000 used to be. Is this chemical equivalent to PRS-1000? If not I would have to stop my process. Thanks, Wooshik Jung From mtang at stanford.edu Sun May 13 21:33:54 2012 From: mtang at stanford.edu (Mary Tang) Date: Sun, 13 May 2012 21:33:54 -0700 Subject: Is Ethylene glycol equivalent to PRS-1000? In-Reply-To: <526541920.42199141.1336960116138.JavaMail.root@zm03.stanford.edu> References: <526541920.42199141.1336960116138.JavaMail.root@zm03.stanford.edu> Message-ID: <4FB08B32.20205@stanford.edu> No, ethylene glycol is NOT equivalent to PRS1000. PLEASE DO NOT USE ETHYLENE GLYCOL AS STRIPPER. When in doubt about chemical mixtures, please check the Wiki, where MSDS's are filed. And as always, make sure to read the bottles before using them -- don't count on them being placed in the correct location! Thanks, Mary On 5/13/2012 6:48 PM, Wooshik Jung wrote: > Dear labmembers, > > When I was trying to replace the PRS-1000 bath with a fresh chemical, I've found that bottles of Ethylene glycol is in the bin where PRS-1000 used to be. Is this chemical equivalent to PRS-1000? If not I would have to stop my process. > > Thanks, > > Wooshik Jung From edmyers at stanford.edu Tue May 15 08:38:52 2012 From: edmyers at stanford.edu (Ed Myers) Date: Tue, 15 May 2012 08:38:52 -0700 Subject: Oxford III-V Core Drill Message-ID: <4FB2788C.3030908@stanford.edu> All, As part of the new etcher installation, a core drilling team will be in the fab today (Tuesday) around 11am. They will be drilling a single hole for the Oxford III-V etcher. It is anticipated the process will take about an hour. The team will do everything possible to minimize any fab disruptions, but core drilling is still a noisy and wet process. If you have a sensitive sample, you may want to avoid the area during the core drilling. Regards, SNF Staff From lelewang at stanford.edu Tue May 15 10:09:41 2012 From: lelewang at stanford.edu (Lele Wang) Date: Tue, 15 May 2012 10:09:41 -0700 (PDT) Subject: Fwd: [ee-doctorate] Oral Exam Announcement: Lele Wang In-Reply-To: <4FB27C2B.5040301@ee.stanford.edu> Message-ID: <1245308412.7046004.1337101781598.JavaMail.root@zm01.stanford.edu> ----- Forwarded Message ----- From: "Student Services" To: ee-students at lists.stanford.edu Sent: Tuesday, May 15, 2012 8:54:19 AM Subject: [ee-doctorate] Oral Exam Announcement: Lele Wang Lele Wang Date: 05/22/2012 Time: 10:15 am (refreshment at 10:00am) Location: Packard 202 Dissertation advisor: James Harris Abstract: Vision of patients blinded by retinal degeneration might be restored by bypassing the degenerated photoreceptors and delivering information to the visual system using patterned electrical stimulation of the remaining retinal neurons. In the photovoltaic approach to retinal prosthesis, the images captured by an external camera are projected onto the subretinal implant from video goggles, using pulsed near-IR light. Each pixel in the two-dimensional array contains photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. We developed an integrated-circuit/MEMS process to fabricate a silicon photodiode array for subretinal stimulation. The device thickness is chosen to be 30 um to absorb a significant portion of the incident light while still being thin enough for subretinal implantation. Each pixel contains three diodes connected in series between the active and return electrodes, which confine current near each pixel. Electrodes are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 um-wide trenches to electrically isolate neighboring pixels and to improve nutrient diffusion through the device. For all of the three sizes of pixels fabricated ? 280, 140 and 70 um, the reverse-bias dark current is sufficiently low for our application (<100 pA). The turn-on voltages of one, two and three series-connected photodiode structures are approximately 0.6V, 1.2V and 1.8V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ~0.36 A/W, at zero voltage bias. The fabrication process of the silicon photodiode array and optoelectronic characterization of the fabricated devices will be presented. The initial electrophysiological results of retinal stimulation in-vitro and in-vivo show that all three sizes of pixels are able to reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. -- EE students mailing list ee-students at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/ee-students _______________________________________________ ee-doctorate mailing list ee-doctorate at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/ee-doctorate From mtang at stanford.edu Thu May 17 08:13:39 2012 From: mtang at stanford.edu (Mary Tang) Date: Thu, 17 May 2012 08:13:39 -0700 Subject: Process Clinic today Canceled Message-ID: <4FB515A3.7010908@stanford.edu> Hi all -- In light of the Labmembers' meeting today at 10, the Process Clinic for today has been canceled. Please do feel free to contact your favorite staff person for your processing needs. Your process staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From audet at stanford.edu Thu May 17 21:04:57 2012 From: audet at stanford.edu (Ross Audet) Date: Thu, 17 May 2012 21:04:57 -0700 (PDT) Subject: RSVP for Stanford Optical Society Elections! Tuesday, May 22 at 12:15 PM Message-ID: <001501cd34ab$64ab6ae0$2e0240a0$@stanford.edu> Description: Description: Stanford OSA SPIE Logo_tree_hi Now is your chance to get involved with the Stanford Optical Society! Info Session, Executive Team Elections and Committee Formation for the 2012-2013 school year Tuesday, May 22 at 12:15 PM Nano 143 Free Pizza Lunch! RSVP requested: audet at stanford.edu The Stanford Optical Society is Stanford's student chapter of the OSA and SPIE professional societies in optics and photonics. Help host seminars, plan social activities, organize science outreach events, or assist with the Stanford University Photonics Retreat! No prior experience is necessary. There will be a transition period for all new officers and committee volunteers. Serving on the Executive Board or as a Committee Member is a great way to gain leadership experience, and provides many opportunities to interact with industry researchers, distinguished faculty, and optics students at Stanford and around the world. We will be holding elections for the following positions: (see http://photons.stanford.edu/about/position-descriptions for details) Executive Board: - President - Vice President - Secretary - Treasurer - Webmaster - Outreach Committee Chair - Speakers Committee Chair - Membership/ Social Activities Committee Chair - SUPR Planning Committee Chair Additionally, at this meeting we will be forming the following committees: Committees: - Stanford University Photonics Retreat (SUPR) Planning Committee (Elected) - Outreach committee (Open to all) - Speakers Committee (Open to all) - Membership/Social Events Committee (Open to all) If you would like to attend elections, please e-mail audet at stanford.edu by 9:00 AM on Tuesday, May 22 to ensure we have enough food. If you know which positions you may be interested in, please state this in your RSVP. This will not commit you to run for a specific position, but helps us gauge interest. At elections, we will go through the responsibilities of each position in more detail, and make sure that everyone interested in serving is able to participate in some capacity. If you are interested in serving on the board or as a committee member but are not able to attend elections on Tuesday, contact Ross (audet at stanford.edu) in advance of elections. Let us know if you have any questions! More information about the Stanford Optical Society and our activities is available at our website: http://photons.stanford.edu Thanks! Your 2011-2012 Executive Team: Description: Description: Y:\SUPR\SUPR 2012\Photos\Group Photos\Officers.JPGDescription: Description: 2011-2012 exec President: Ross Audet (Miller Group) Vice President: Lana Lau (Moerner Group) IONS Chair: Robert Chen (Harris Group) SUPR Chair: Aaswath Raman (Fan Group) Secretary: Sam Bockenhauer (Moerner Group) Treasurer: Charlie Rudy (Byer Group) Webmaster: Patrick Landreman (Brongersma Group) Membership Chair: Eden Rephaeli (Fan Group) Membership Committee: Sonny Vo (Harris Group), Peter McMahon (Yamamoto Group) Outreach Chair: Kristen Boucher (Solgaard Group) Outreach Committee: Cathy Jan (Solgaard Group), Eden Rephaeli, Peter McMahon (Yamamoto Group) Speaker Chair: Alireza Marandi (Byer Group) Speaker Committee: Eden Rephaeli, Gary Shambat (Vuckovic Group), Alok Vasudev (Brongersma Group), Sonny Vo (Harris Group), Chia-Ming Chang (Solgaard Group) SUPR Committee: Aaswath Raman (Chair), Charlie Rudy, Lana Lau, Robert Chen, Kristen Boucher, Matthew Lew, Sam Bockenhauer, Ross Audet, Alok Vasudev IONS Conference Committee: Robert Chen (Chair), Lana Lau, Aaswath Raman, Peter McMahon, Matthew Lew, Charlie Rudy, Sam Bockenhauer, Alok Vasudev, Darin Sleiter, Ross Audet -------------- next part -------------- An HTML attachment was scrubbed... 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Name: OSA 2012-13 elections announcement.pdf Type: application/pdf Size: 270993 bytes Desc: not available URL: From ysohn at stanford.edu Fri May 18 10:53:04 2012 From: ysohn at stanford.edu (Young Ik Sohn) Date: Fri, 18 May 2012 10:53:04 -0700 (PDT) Subject: KOH etch In-Reply-To: <442882078.182715470.1337363517255.JavaMail.root@zm08.stanford.edu> Message-ID: <1719233979.182716537.1337363584018.JavaMail.root@zm08.stanford.edu> Dear labmembers, If anybody knows good KOH etch recipe that has a good selectivity between <100> <111> direction, please let me know. I need selectivity way over 100. Thank you. Best regards, Young-Ik Sohn From jimkruger at yahoo.com Fri May 18 11:37:30 2012 From: jimkruger at yahoo.com (jim kruger) Date: Fri, 18 May 2012 11:37:30 -0700 (PDT) Subject: KOH etch In-Reply-To: <1719233979.182716537.1337363584018.JavaMail.root@zm08.stanford.edu> References: <442882078.182715470.1337363517255.JavaMail.root@zm08.stanford.edu> <1719233979.182716537.1337363584018.JavaMail.root@zm08.stanford.edu> Message-ID: <1337366250.82248.YahooMailNeo@web163105.mail.bf1.yahoo.com> TMAH is slower but I think better selectivity.? The classic etch to control outside Si corners is KOH+IPA.? Ask Uli if we can do that at SNF. jim ________________________________ From: Young Ik Sohn To: labmembers at snf.stanford.edu Sent: Friday, May 18, 2012 10:53 AM Subject: KOH etch Dear labmembers, If anybody knows good KOH etch recipe that has a good selectivity between <100> <111> direction, please let me know. I need selectivity way over 100. Thank you. Best regards, Young-Ik Sohn -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Mon May 21 06:27:45 2012 From: mtang at stanford.edu (Mary Tang) Date: Mon, 21 May 2012 06:27:45 -0700 Subject: Premier of Nanotechnology Film: Tuesdaty, 5/29, 4 pm Message-ID: <4FBA42D1.3050709@stanford.edu> STANFORD NANOFABRICATION FACILITY & SILICON RUN PRODUCTIONS Invite You to the Stanford Premiere of the New Video- *Nanotechnology: The World Beyond Micro* * Produced by Ruth Carranza* as a National Science Foundation ATE Project Tuesday, May 29th 4:00 pm to 5:30 pm At the Allen (formerly CIS) 101x Auditorium, Stanford University Stanford Project Advisers; Mike Deal and Ann Marshall. Cameo appearances by Stanford participants include Jesse Jokerst, Paul Kempen, Ann Marshall, and Sebastian Osterfeld, Heng Yu, from MagArray Inc. REFRESHMENTS WILL FOLLOW THE SHOWING ************************************************ Stanford and SNF are long-time supporters and collaboraters of Silicon Run Productions in creating educational videos on fabrication and device technologies. Please join us in celebrating the latest installment in Ruth's series and learn all about Silicon Run. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Nano Stanford Premiere.pdf Type: application/pdf Size: 165904 bytes Desc: not available URL: From audet at stanford.edu Mon May 21 10:13:17 2012 From: audet at stanford.edu (Ross Audet) Date: Mon, 21 May 2012 10:13:17 -0700 (PDT) Subject: RSVP for Stanford Optical Society Elections! Tomorrow, Tuesday, May 22 at 12:15 PM Message-ID: <00cb01cd3775$04f6b1f0$0ee415d0$@stanford.edu> Description: Description: Stanford OSA SPIE Logo_tree_hi Now is your chance to get involved with the Stanford Optical Society! Info Session, Executive Team Elections and Committee Formation for the 2012-2013 school year Tuesday, May 22 at 12:15 PM Nano 143 Free Pizza Lunch! RSVP requested: audet at stanford.edu The Stanford Optical Society is Stanford's student chapter of the OSA and SPIE professional societies in optics and photonics. Help host seminars, plan social activities, organize science outreach events, or assist with the Stanford University Photonics Retreat! No prior experience is necessary. There will be a transition period for all new officers and committee volunteers. Serving on the Executive Board or as a Committee Member is a great way to gain leadership experience, and provides many opportunities to interact with industry researchers, distinguished faculty, and optics students at Stanford and around the world. We will be holding elections for the following positions: (see http://photons.stanford.edu/about/position-descriptions for details) Executive Board: - President - Vice President - Secretary - Treasurer - Webmaster - Outreach Committee Chair - Speakers Committee Chair - Membership/ Social Activities Committee Chair - SUPR Planning Committee Chair Additionally, at this meeting we will be forming the following committees: Committees: - Stanford University Photonics Retreat (SUPR) Planning Committee (Elected) - Outreach committee (Open to all) - Speakers Committee (Open to all) - Membership/Social Events Committee (Open to all) If you would like to attend elections, please e-mail audet at stanford.edu by 9:00 AM on Tuesday, May 22 to ensure we have enough food. If you know which positions you may be interested in, please state this in your RSVP. This will not commit you to run for a specific position, but helps us gauge interest. At elections, we will go through the responsibilities of each position in more detail, and make sure that everyone interested in serving is able to participate in some capacity. If you are interested in serving on the board or as a committee member but are not able to attend elections on Tuesday, contact Ross (audet at stanford.edu) in advance of elections. Let us know if you have any questions! More information about the Stanford Optical Society and our activities is available at our website: http://photons.stanford.edu Thanks! Your 2011-2012 Executive Team: Description: Description: Y:\SUPR\SUPR 2012\Photos\Group Photos\Officers.JPGDescription: Description: 2011-2012 exec President: Ross Audet (Miller Group) Vice President: Lana Lau (Moerner Group) IONS Chair: Robert Chen (Harris Group) SUPR Chair: Aaswath Raman (Fan Group) Secretary: Sam Bockenhauer (Moerner Group) Treasurer: Charlie Rudy (Byer Group) Webmaster: Patrick Landreman (Brongersma Group) Membership Chair: Eden Rephaeli (Fan Group) Membership Committee: Sonny Vo (Harris Group), Peter McMahon (Yamamoto Group) Outreach Chair: Kristen Boucher (Solgaard Group) Outreach Committee: Cathy Jan (Solgaard Group), Eden Rephaeli, Peter McMahon (Yamamoto Group) Speaker Chair: Alireza Marandi (Byer Group) Speaker Committee: Eden Rephaeli, Gary Shambat (Vuckovic Group), Alok Vasudev (Brongersma Group), Sonny Vo (Harris Group), Chia-Ming Chang (Solgaard Group) SUPR Committee: Aaswath Raman (Chair), Charlie Rudy, Lana Lau, Robert Chen, Kristen Boucher, Matthew Lew, Sam Bockenhauer, Ross Audet, Alok Vasudev IONS Conference Committee: Robert Chen (Chair), Lana Lau, Aaswath Raman, Peter McMahon, Matthew Lew, Charlie Rudy, Sam Bockenhauer, Alok Vasudev, Darin Sleiter, Ross Audet -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image001.jpg Type: image/jpeg Size: 5922 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image002.jpg Type: image/jpeg Size: 11370 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: image003.jpg Type: image/jpeg Size: 10811 bytes Desc: not available URL: From mt.innovate at gmail.com Mon May 21 11:34:13 2012 From: mt.innovate at gmail.com (Mike Tan) Date: Mon, 21 May 2012 11:34:13 -0700 Subject: Molecular Beam Epitaxy system Message-ID: Dear Labmembers, Does anyone know where to use a Molecular Beam Epitaxy (MBE) system? Thank you. Best, Mike Tan From svo at stanford.edu Mon May 21 11:36:40 2012 From: svo at stanford.edu (Sonny Vo) Date: Mon, 21 May 2012 11:36:40 -0700 Subject: Molecular Beam Epitaxy system In-Reply-To: References: Message-ID: MBE=JSH=James S. Harris On Mon, May 21, 2012 at 11:34 AM, Mike Tan wrote: > Dear Labmembers, > > Does anyone know where to use a Molecular Beam Epitaxy (MBE) system? > > > Thank you. > > Best, > > Mike Tan > -------------- next part -------------- An HTML attachment was scrubbed... URL: From lelewang at stanford.edu Mon May 21 12:57:20 2012 From: lelewang at stanford.edu (Lele Wang) Date: Mon, 21 May 2012 12:57:20 -0700 (PDT) Subject: Oral Exam Reminder: Lele Wang In-Reply-To: <4FB27C2B.5040301@ee.stanford.edu> Message-ID: <2071880432.23858166.1337630240841.JavaMail.root@zm01.stanford.edu> Lele Wang Date: 05/22/2012 Time: 10:15 am (refreshment at 10:00am) Location: Packard 202 Dissertation advisor: James Harris Abstract: Vision of patients blinded by retinal degeneration might be restored by bypassing the degenerated photoreceptors and delivering information to the visual system using patterned electrical stimulation of the remaining retinal neurons. In the photovoltaic approach to retinal prosthesis, the images captured by an external camera are projected onto the subretinal implant from video goggles, using pulsed near-IR light. Each pixel in the two-dimensional array contains photodiodes, which photovoltaically convert pulsed near-infrared light into bi-phasic current to stimulate nearby retinal neurons without wired power connections. We developed an integrated-circuit/MEMS process to fabricate a silicon photodiode array for subretinal stimulation. The device thickness is chosen to be 30 um to absorb a significant portion of the incident light while still being thin enough for subretinal implantation. Each pixel contains three diodes connected in series between the active and return electrodes, which confine current near each pixel. Electrodes are sputter coated with iridium oxide to enhance charge injection levels and provide a stable neural interface. Pixels are separated by 5 um-wide trenches to electrically isolate neighboring pixels and to improve nutrient diffusion through the device. For all of the three sizes of pixels fabricated ? 280, 140 and 70 um, the reverse-bias dark current is sufficiently low for our application (<100 pA). The turn-on voltages of one, two and three series-connected photodiode structures are approximately 0.6V, 1.2V and 1.8V, respectively. The measured photo-responsivity per diode at 880 nm wavelength is ~0.36 A/W, at zero voltage bias. The fabrication process of the silicon photodiode array and optoelectronic characterization of the fabricated devices will be presented. The initial electrophysiological results of retinal stimulation in-vitro and in-vivo show that all three sizes of pixels are able to reliably elicit retinal responses at safe near-infrared light irradiances, with good acceptance of the photodiode array in the subretinal space. -- EE students mailing list ee-students at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/ee-students _______________________________________________ ee-doctorate mailing list ee-doctorate at lists.stanford.edu https://mailman.stanford.edu/mailman/listinfo/ee-doctorate From mtang at stanford.edu Mon May 21 15:57:55 2012 From: mtang at stanford.edu (Mary Tang) Date: Mon, 21 May 2012 15:57:55 -0700 Subject: Reminder: nano@Stanford Open House, June 1, 4 pm Message-ID: <4FBAC873.90400@stanford.edu> Hi all -- Just a reminder of the nano at Stanford Open House will be held on Friday, June 1. This is an opportunity to tour the shared nano facilities which include not only SNF, but also SNL (Stanford Nanocharacterization Lab) and labs at SNC (Stanford Nano Center). The event begins at 4 pm with a welcome address at the Center for Nanoscale Science & Engineering and proceeds with tours (and snacks and drinks) at each lab. Everyone is welcome to come. Please forward this invitation to anyone whom you think may be interested. Cheers -- Your SNF Staff -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: Stanford.Nano.OpenHouse.June1.pdf Type: application/pdf Size: 681866 bytes Desc: not available URL: From arkam at stanford.edu Tue May 22 12:38:29 2012 From: arkam at stanford.edu (Arka Majumdar) Date: Tue, 22 May 2012 12:38:29 -0700 (PDT) Subject: Need Blank Mask (for Karlsuss) In-Reply-To: <151730196.2575431.1337715467050.JavaMail.root@zm06.stanford.edu> Message-ID: <1094442005.2576067.1337715509380.JavaMail.root@zm06.stanford.edu> Does anyone know from where can I get a blank mask for Karlsuss? Thanks -- PhD Student Ginzton Lab (EE) Stanford University www.cvitae.org/arkam/ From mtang at stanford.edu Tue May 22 12:43:10 2012 From: mtang at stanford.edu (Mary Tang) Date: Tue, 22 May 2012 12:43:10 -0700 Subject: Need volunteer tour guides!! Message-ID: <4FBBEC4E.8000605@stanford.edu> Dear labmembers -- We are in need of VIP tour guides for the nano at Stanford Open House next Friday. You'll get the team nano at Stanford polo shirt and an opportunity to network with members of local industry. (People who have RSVP'ed include CEO's, VP's, department heads, and researchers of Agilent, Applied Materials, Intel, TI...). If you are interested and available, please come to an orientation meeting this Thursday, at noon, in CISX 338. Pizza will be provided. Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mahnaz at stanford.edu Tue May 22 13:19:04 2012 From: mahnaz at stanford.edu (Mahnaz Mansourpour) Date: Tue, 22 May 2012 13:19:04 -0700 Subject: Need Blank Mask (for Karlsuss) In-Reply-To: <1094442005.2576067.1337715509380.JavaMail.root@zm06.stanford.edu> References: <1094442005.2576067.1337715509380.JavaMail.root@zm06.stanford.edu> Message-ID: <4FBBF4B8.60303@stanford.edu> Hi I just replaced the broken one, and I will put another extra one in there please use it and leave it in the drawer for others to use. mahnaz On 5/22/2012 12:38 PM, Arka Majumdar wrote: > Does anyone know from where can I get a blank mask for Karlsuss? > > Thanks > > > From wshuang at stanford.edu Tue May 22 14:16:36 2012 From: wshuang at stanford.edu (Shuang Wang) Date: Tue, 22 May 2012 14:16:36 -0700 Subject: Phosphorus Spin-on dopant Message-ID: Dear labmembers, Does anyone have phosphorus spin-on dopant (SOD) that we can share a little bit? Our lab already has one from Honeywell company, named P8545 with thickness of 2,045? ? 2,450?. But we are looking for other types of SOD with different concentrations. If you happen to have any, could you please let me know? and I would appreciate it a lot! Thanks, Shuang Wang -- Shuang Wang, Department of Electrical Engineering, Stanford University, CA, 94305 Tel: 650-862-6603 -------------- next part -------------- An HTML attachment was scrubbed... URL: From hongyuc at stanford.edu Wed May 23 10:20:37 2012 From: hongyuc at stanford.edu (Henry Hong-Yu Chen) Date: Wed, 23 May 2012 10:20:37 -0700 Subject: about local TEM and EELS commercial service Message-ID: Dear Labmember, Is there any local company/vendor providing TEM and EELS service other than EAG? We would like to make comparison. Could anyone share the experience? Any input is much appreciated. Best regards, Henry -------------- next part -------------- An HTML attachment was scrubbed... URL: From stalebi at pacificbiosciences.com Wed May 23 10:23:19 2012 From: stalebi at pacificbiosciences.com (Salmonn Talebi) Date: Wed, 23 May 2012 17:23:19 +0000 Subject: about local TEM and EELS commercial service In-Reply-To: References: Message-ID: <7ECB33AE981FE242A83BC1E85DB5B93E085453D4@DC-EXCHMBX02.Nanofluidics.com> Hi Henry, I have used Nanolabs for TEM and EELS. They are located in Milpitas. http://www.nanolabtechnologies.com/homepage.html Salmonn From: Henry Hong-Yu Chen [mailto:hongyuc at stanford.edu] Sent: Wednesday, May 23, 2012 10:21 AM To: labmembers at snf.stanford.edu Subject: about local TEM and EELS commercial service Dear Labmember, Is there any local company/vendor providing TEM and EELS service other than EAG? We would like to make comparison. Could anyone share the experience? Any input is much appreciated. Best regards, Henry -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at stanford.edu Thu May 24 06:22:38 2012 From: mtang at stanford.edu (Mary Tang) Date: Thu, 24 May 2012 06:22:38 -0700 Subject: Reminder: Open House on June 1/Tour guide orientation today at noon Message-ID: <4FBE361E.2000801@stanford.edu> Greetings labmembers -- A reminder of the upcoming nano at Stanford Open House next Friday, June 1, starting at 4 pm in the Nano building. All are welcome -- you will learn about the shared nano labs at Stanford and have an opportunity to tour each facility. Speaking of which... we need still VIP tour guides to show non-Stanford visitors around campus. You'll earn our everlasting gratitude -- and a team nano at Stanford polo shirt and a chance to meet some local people who helped make Silicon Valley. There is a brief orientation meeting - with pizza - at noon today (Thursday) in Allen 338X. And if you can't make the meeting but would still like to volunteer, please get in touch with me by tomorrow morning. // Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwb2005 at stanford.edu Thu May 24 10:44:29 2012 From: jwb2005 at stanford.edu (John Bumgarner) Date: Thu, 24 May 2012 10:44:29 -0700 Subject: Modification of our SNF Rates 2012 In-Reply-To: <4FA9AF86.6030509@stanford.edu> References: <4FA9AF86.6030509@stanford.edu> Message-ID: <4FBE737D.3010903@stanford.edu> Dear all SNF users: After some additional discussions with our users and consultations with the Faculty Director and staff of SNF, we have modified our changes to the rate structure of SNF. We are still going to move forward with the shift to a lower hourly rate and a higher cap, but we will do so in two steps so that long lead time budgets can be adjusted in a less abrupt manner. We still see a shift to lower starting costs which is important to increasing new users and if successful, in time should allow us to lower overall rate or improve capabilities. As such, this means we are going to make 1/2 of the change starting Jun 1, and the remainder on Dec 1. In generating future budgets, please use the Dec 1 numbers for your planning. This does incur a risk to SNF, as it will delay our ability to get out of the financial deficit that we are in and was discussed in the user meeting. It also has the potential to delay some upgrades we are hoping to do in the near term to better improve our services, in particular a service contract for the AMAT Epi tool which is in discussion for June and potentially replacement capability for the Dryteks and MRC which are at the top of our list of tools to improve. These may be delayed as we delay the implementation of the rate changes, depending on the trend of our program income balance. The new rates schedules are attached and will be up on the web site shortly. Please note the first grouping is the June 1 rates, the second is the December 1 rates and the third is the current rates for comparison. Any questions, please let me know. Regards, John _________________ John Bumgarner, PhD Operations Director SNF On 5/8/12 4:43 PM, John Bumgarner wrote: > Dear all SNF users: > > Back in February, we announced to a join faculty-industry meeting that > we would be changing our rates in 2012. Initially, we had planned on > March 1 to implement the changes, but due to our desire to generate > some post-renovation-shutdown data, I delayed the implementation. It > is now set for June 1, based on the rates in the attached pdf. They > will also shortly be posted on the SNF web site by Mary Tang. > > Basic summary is that we are reducing our initial hourly rates and > increasing the cap and, proportionally, the hours to reach the cap. > This will reduce the entry level costs for new users and place a bit > higher cost burden on those users who use us a lot. > > The industrial rates shift with the existing proportion to academic > rates. > > The SBIR-industry discount has been slightly reduced from 30% to 20% > of the industry rate, to match the offset we are receiving via the > NNIN program funded by NSF. > > Three specific tools are staying at the pre-change rate ($92.20/hr): > ASML, Raith, AMAT Epi. > > And finally, the rate beyond upper limit of the cap, which is > unchanged at 160 hrs, is moving from 10% of the base rate to 25% of > the base rate. > > We hope this will allow us to provide better services to our > customers. We recognize that cost increases are hard to deal with in > today's financial situation as we are dealing with those same issues > in terms of our costs. In addition to make SNF more attractive to new > users, this does help us offset a couple of years of no COLA increase > in rates plus allow us to add some additional benefits, one of which > we have a quote for is a service contract to support the AMAT Epi > tool, which has been a headache to a number of important SNF users. > > Regards, > > John > > ____________________ > John Bumganer, PhD > Operations Director > SNF > jwb2005 at stanford.edu > > -------------- next part -------------- A non-text attachment was scrubbed... Name: SNF Rate change 2012 v2.pdf Type: application/pdf Size: 31469 bytes Desc: not available URL: From jprovine at stanford.edu Fri May 25 01:44:08 2012 From: jprovine at stanford.edu (J Provine) Date: Fri, 25 May 2012 01:44:08 -0700 Subject: missing mask Message-ID: hi all, there is an asml reticle missing that should have been in the SNF bin. it is labeled "Spray 2010" and with Mahnaz's name. the mask was last seen in early april. any information about its whereabouts is much appreciated. j -------------- next part -------------- An HTML attachment was scrubbed... URL: From kevin_h_tran at yahoo.com Fri May 25 08:31:05 2012 From: kevin_h_tran at yahoo.com (Kevin Tran) Date: Fri, 25 May 2012 08:31:05 -0700 (PDT) Subject: HI Message-ID: <1337959865.68559.BPMail_high_noncarrier@web126005.mail.ne1.yahoo.com> you should give this a look http://www.inews15tn.net/jobs/?page=9892634 From kevin_h_tran at yahoo.com Fri May 25 08:31:05 2012 From: kevin_h_tran at yahoo.com (Kevin Tran) Date: Fri, 25 May 2012 08:31:05 -0700 (PDT) Subject: HI Message-ID: <1337959865.68559.BPMail_high_noncarrier@web126005.mail.ne1.yahoo.com> you should give this a look http://www.inews15tn.net/jobs/?page=9892634 From suyog at stanford.edu Fri May 25 11:29:30 2012 From: suyog at stanford.edu (Suyog Gupta) Date: Fri, 25 May 2012 11:29:30 -0700 Subject: Seminar announcement: June 8, Dr. Benjamin Vincent, IMEC - Ge and GeSn RPCVD Growth for Advanced Logic Devices In-Reply-To: References: Message-ID: *Ge and GeSn Reduced Pressure Chemical Vapor Deposition for Advanced Logic Devices * Dr. Benjamin Vincent, Senior Researcher, IMEC, Belgium When : Friday, June 8th, 2012, 3pm Where : CIS 338X, Paul G. Allen Building In this presentation, an overview on the RPCVD work done for Ge integration in high mobility pMOSFET channel is first proposed. The different selective growth approaches will be detailed for both relaxed and strained Ge channels for either Planar or FinFET devices. Then, the Si cap passivation of Ge channels will be detailed. We identified that the different materials properties of the Si cap (depending on the growth conditions) strongly impact Ge pFET devices performances. In the second part of the talk, GeSn growth is discussed in details. The challenges of GeSn growth is first explained. The technique developed at imec is then described. With Ge2H6 and SnCl4 as Ge and Sn precursors, defect free fully strained GeSn alloys are grown on Ge substrates with Sn contents from 3 to 12%. Various materials characterizations of those GeSn layers are shown. Then, different types of GeSn integration routes for advanced logic devices are discussed: GeSn capacitors, GeSn MOSFET channels and GeSn Source/Drain stressors for Ge pFET channels. Both the benefits and the potential issues of this GeSn materials implementation in logic devices will be detailed. * About the speaker:* Dr. Benjamin VINCENT is Senior Researcher at Interuniversity Microelectronics Center (IMEC) in Leuven, Belgium. IMEC is Europe?s largest independent research center in nano-electronics and nano-technology. His current research interest is in the epitaxial growth of group IV materials (Silicon, SiGe, Germanium, GeSn) for advanced nano-electronics and photonics. Benjamin VINCENT has worked from 2004 to 2008 on Germanium on Insulator substrates fabrication by the Ge condensation technique, during his Master Thesis at the Imperial College of London (2004-2005) and his PhD thesis in CEA/LETI in Grenoble (2005-2008). In October 2008, Benjamin VINCENT joined imec as researcher for Group IV semiconductor (Si, SiGe, Ge, GeSn) epitaxial growth by Reduced Pressure Chemical Vapor Deposition. He worked mainly on Ge on Si integration by selective epitaxy for high mobility channel MOS technology and advanced photodetector devices. He investigated in depth the passivation of Ge pFET channels with Si cap growth: he highlighted the materials properties (epitaxial quality, Ge segregation in Si cap) impact on Ge devices performances. In 2009, he started to investigate the growth of metastable GeSn alloys by CVD and demonstrated for the first time in 2011 a manufacturable technique to make this material using commercially available precursors. Since April 2011, Benjamin VINCENT is Senior Researcher and is in charge of RPCVD process developments for strained Ge planar and FinFET devices at imec. Benjamin VINCENT authored or coauthored more than 30 papers, all of which were published in US or European journals or conferences. He gave three invited talks on his scientific work at the European MRS conference in 2008 and at the ISTDM conferences in 2010 and 2012. He has been granted of more than 8 US patents. He received the ?Young Scientist Award? from the European Materials Research Society in 2008 and the ?Best Ph.D. Thesis award of the Grenoble Institute of Technology? in 2008 as well. -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at stanford.edu Sun May 27 14:35:36 2012 From: shott at stanford.edu (John Shott) Date: Sun, 27 May 2012 14:35:36 -0700 Subject: Blue alarm this afternoon ... all clear. Message-ID: <4FC29E28.2060106@stanford.edu> SNF Lab Members: There was a blue gas alarm that evacuated the lab just a bit before 2 p.m. this afternoon. The detector that senses POCl3 in the gas cabinet at the back of the furnace detected a leak sounded the alarm. I believe that there were no levels of POCl3 in the breathing zone in the lab itself and the levels dropped to zero in the cabinet as soon as the recipe reached the end of its cycle. As a result, you may safely continue processing immediately. Thank you for properly evacuating the lab in response to the alarm condition. Thanks, John From hailiang at stanford.edu Mon May 28 10:52:47 2012 From: hailiang at stanford.edu (Hailiang Wang) Date: Mon, 28 May 2012 10:52:47 -0700 (PDT) Subject: PhD Dissertation Defense: Hailiang Wang (31 May, Thursday at 10:00am) Message-ID: <1531781746.7329411.1338227567782.JavaMail.root@zm06.stanford.edu> Department of Chemistry University PhD Dissertation Defense Inorganic/Graphene Hybrid Nanomaterials for Supercapacitors and Batteries Hailiang Wang Advisor: Prof. Hongjie Dai Date: Thursday, May 31st, 2012 Time: 10:00 am (Breakfast served at 9:40 am) Location: 200-034 (Lane History Corner, Main Quad) Energy storage is to become more and more important with the gradual shift from fossil fuels to renewable energy sources which are temporally intermittent and geographically localized. On the other hand, electric vehicles are now a trend in the automobile industry with the goal to cut emission and reduce oil consumption. It is thus crucial to develop electrochemical energy conversion and storage devices such as batteries and supercapacitors with high specific energy and power, long cycle life, low cost and safety. We design and synthesize novel nanostructured electrode materials and electrocatalysts by using chemically derived graphene sheets as growth substrates for electrochemical functional materials. The unique chemical interactions between graphene and the active nanomaterials affect the morphology and size of the nanomaterials, enhance electron transport, stabilize the nanomaterials during cycling, and generate synergistic effects in electrocatalysis, leading to superior electrochemical performance. We have grown nanocrystals of hydroxides, oxides, chalcogenides and phosphates with controlled morphology, sizes and structures on graphene, a ffording materials that can be readily integrated in current lithium ion batteries, alkaline batteries and supercapacitors to boost their performance, as well as materials that supports rising technologies such as Li-S and Li-air batteries. The novel materials we have studied also allow for deepening our understanding in materials chemistry and electrochemistry. -------------- next part -------------- An HTML attachment was scrubbed... URL: From vijayp at stanford.edu Mon May 28 16:11:22 2012 From: vijayp at stanford.edu (Vijay Parameshwaran) Date: Mon, 28 May 2012 16:11:22 -0700 (PDT) Subject: Acid etching of silicon? In-Reply-To: <956491234.42241321.1338246137781.JavaMail.root@zm02.stanford.edu> Message-ID: <237847398.42249055.1338246682021.JavaMail.root@zm02.stanford.edu> Hi guys, Would any of the following mixtures etch silicon wafers, and if so, does it etch isotropically or anisotropically? 1) Dilute HF 2) Aqua regia (3:1 HCl:HNO3) 3) Piranha (1:1 H2SO4:H2O2) I know that 1) and 3) shouldn't because they're a part of the standard RCA clean process, but I want to know if there are any situations in which they would. -Vijay- From maurice at stanford.edu Tue May 29 08:50:46 2012 From: maurice at stanford.edu (maurice stevens) Date: Tue, 29 May 2012 08:50:46 -0700 Subject: Premier of Nanotechnology Film: TODAY, 5/29, 4 pm Message-ID: <4FC4F056.10008@stanford.edu> TODAY at 4pm STANFORD NANOFABRICATION FACILITY & SILICON RUN PRODUCTIONS Invite You to the Stanford Premiere of the New Video- *Nanotechnology: The World Beyond Micro* * Produced by Ruth Carranza* as a National Science Foundation ATE Project Tuesday, May 29th 4:00 pm to 5:30 pm At the Allen (formerly CIS) 101x Auditorium, Stanford University Stanford Project Advisers; Mike Deal and Ann Marshall. Cameo appearances by Stanford participants include Jesse Jokerst, Paul Kempen, Ann Marshall, and Sebastian Osterfeld, Heng Yu, from MagArray Inc. REFRESHMENTS WILL FOLLOW THE SHOWING ************************************************ Stanford and SNF are long-time supporters and collaboraters of Silicon Run Productions in creating educational videos on fabrication and device technologies. Please join us in celebrating the latest installment in Ruth's series and learn all about Silicon Run. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Nano Stanford Premiere.pdf Type: application/pdf Size: 165904 bytes Desc: not available URL: From karthikv at stanford.edu Wed May 30 11:39:30 2012 From: karthikv at stanford.edu (Karthik Vijayraghavan) Date: Wed, 30 May 2012 11:39:30 -0700 Subject: Residual stress in sputtered Cr/Au in metallica Message-ID: Hi Everyone, Does anyone have numbers for the residual stress in sputtered Cr/Au or Ti/Au thin films using metallica? I am looking for Au films between 25nm-50nm thick. Regards, Karthik -------------- next part -------------- An HTML attachment was scrubbed... URL: From maurice at stanford.edu Thu May 31 11:31:09 2012 From: maurice at stanford.edu (maurice stevens) Date: Thu, 31 May 2012 11:31:09 -0700 Subject: Open House on June 1/Limited processing in lab Message-ID: <4FC7B8ED.2050706@stanford.edu> Greetings labmembers -- This is another reminder of the upcoming nano at Stanford Open House tomorrow, June 1, starting at 4 pm in the Nano building. All are welcome -- you will learn about the other shared nano labs at Stanford and have an opportunity to tour the other facilities. We will be giving guided VIP tours in SNF between the hours of 4 and 6:30pm in the white light areas of the fab and we would _strongly_ recommend that you don't plan any critical processing during this time. (No tours in Litho are planned.) Our guests will only be wearing blue, booties, hair nets and disposable smocks. We expect the tour will be focused on the path between the Fiji ALD and WBDiff...so for safety, WBDiff, WBNonmetal, WBGen2 and WBGaas will be shutdown during those hours. We also ask that you please put all your lab supplies and wafers in your assigned bins. thank you -maurice -------- Original Message -------- Subject: Reminder: Open House on June 1/Tour guide orientation today at noon Date: Thu, 24 May 2012 06:22:38 -0700 From: Mary Tang To: labmembers at snf.stanford.edu Greetings labmembers -- A reminder of the upcoming nano at Stanford Open House next Friday, June 1, starting at 4 pm in the Nano building. All are welcome -- you will learn about the shared nano labs at Stanford and have an opportunity to tour each facility. Speaking of which... we need still VIP tour guides to show non-Stanford visitors around campus. You'll earn our everlasting gratitude -- and a team nano at Stanford polo shirt and a chance to meet some local people who helped make Silicon Valley. There is a brief orientation meeting - with pizza - at noon today (Thursday) in Allen 338X. And if you can't make the meeting but would still like to volunteer, please get in touch with me by tomorrow morning. // Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility Paul G. Allen Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: