Comment lampoly SNF 2010-04-21 11:37:28: Etch rate Data from 4/20/2010

usha at snf.stanford.edu usha at snf.stanford.edu
Wed Apr 21 11:37:29 PDT 2010


All wafers were etched using recipe 1:
BT = 10 sec; ME = 60 sec; OE = 30 sec.
Si wafer step height was measured in Zygo.  
Thickness before and after etch on all wafers weremeasured using 
Nano in across from Drytek 2.
Si Loss = 4843A; Unif. = 1.82%
Oxide Loss = 424A; Unif. = 5.07%
3612 PR Loss = 1325A; Unif. = 3.67%
Poly Loss = 5363A; Unif. = 0.97%




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