Comment lampoly SNF 2010-01-13 10:43:52: Etch quals from 1/5/10

mtang at snf.stanford.edu mtang at snf.stanford.edu
Wed Jan 13 10:43:52 PST 2010


Apologies for the delay in posting qual results:
Si Etch depth	             4880 Angstroms		
Si Etch Nonuniformity:   0.99%		
Si/Resist Selectivity:      3.75		
This is recipe #1 with breakthrough=10 sec, main etch = 60 sec, overetch = 30 sec, following 10 dummy wafers.  These results are normal following soon after a chamber clean.
Raw data:
Location	Pre-Resist	Post-Resist	Si depth
Top	9399	8191	4912
Center	9570	8240	4929
Flat	9547	8244	4823
Left	9548	8210	4902
Right	9540	8204	4834




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