Comment lampoly SNF 2012-05-08 15:23:09: Silicon Etch Rate Qual

mtang at snf.stanford.edu mtang at snf.stanford.edu
Tue May 8 15:23:10 PDT 2012


Hi all --
Single crystal silicon etch qual results, basic resist on silicon (litho qual wafer), using recipe #1, timed etch for 10", 60", and 30" in RF steps 3, 5, and 7:
Silicon etch depth:  4170 A (expect 3600 A- 4800A)
Silicon etch nonuniformity:  0.8% (expect <2%)
Selectivity to resist:  5.6 (expect about 4.3 - this is on the high side.)
DC Bias is good.  The basic qual is good, so the machine is OK to run.  As always, please check your own recipes with test wafers before committing your device wafers.




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