Plasma Cleaning

Jim McVittie mcvittie at cis.Stanford.EDU
Mon Mar 19 14:20:28 PST 2001

Lam Poly,

As I said in my note last week, we are starting to see particle problems
in the Lam, The probable causes are higher use, longer etch times by some
new users and some high power etch experiments that I have been doing in
the tool. The particles and flakes are most likely from the normal wall
deposition from etching silicon with HBr. While wet cleaning of the
chamber can be used to remove the wall deposition before it starts to come
off, it is better if we start doing in-situ plasma cleaning on a regular
basis. I suggest we start doing a 10 min plasma clean after every 60 min
of plasma on-time. The plasma clean uses a SF6/O2 plasma and requires the
chamber to be re-seasoned. Once Len has move the SF6 to the CF4 line, I
will will create a clean recipe and send out the details on running

James P. McVittie	                Senior Research Scientist
Allen Center for Integrated Systems     jmcvittie at
Stanford University             	Tel: (650) 725-3640	
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075	

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