From booth at snf.stanford.edu  Tue Apr  2 12:59:44 2002
From: booth at snf.stanford.edu (Len Booth)
Date: Tue, 02 Apr 2002 12:59:44 -0800
Subject: LAMpoly status 04/02/02
Message-ID: <3CAA1BC0.3AF231E9@snf.stanford.edu>

The new power supply for the LAMpoly arrived,
has been installed, and works well.  The cooling
fan for the power supply is scheduled to arrive
tomorrow (Wednesday 4/3).  After that is installed,
we can do some process testing & then have
the tool available to the public again.
			Len


From booth at snf.stanford.edu  Mon Apr  8 12:35:59 2002
From: booth at snf.stanford.edu (Len Booth)
Date: Mon, 08 Apr 2002 12:35:59 -0700
Subject: LAMpoly status  04/08/02
Message-ID: <3CB1F11F.344124B9@snf.stanford.edu>

LAMpoly users -
	A capacitance manometer has failed on our
system.  One of it's functions is to provide pressure
data during MFC calibrations.  It has been sent out for
repair, and should be back this Wednesday (4/10).
			Len


From booth at snf.stanford.edu  Fri Apr 12 13:11:56 2002
From: booth at snf.stanford.edu (Len Booth)
Date: Fri, 12 Apr 2002 13:11:56 -0700
Subject: LAMpoly update  04/12/02
Message-ID: <3CB73F8C.8043F650@snf.stanford.edu>

LAMpoly users -
	The machine has been reasembled and all the gas 
flows have been calibrated.  I'm still waiting for a new
floppy drive controller card to arrive, but this does not
prevent current usage of the machine, as we ordinarily
use the hard disk for recipe storage & loading.
Last night kailash came in and tested the poly etch rate & uniformity. 
Below are his results:	Len
- - - - - - - - - - - - - - - - - - - - - - - - - - - -
I tested my dummies on Program 77 which is pretty much 
similar to Program 1 except for the main etch. the etch 
rates are similiar however.  In my last run (a couple 
of months back) with this process, I had an etch
rate for doped poly around 2500 A /min. For the test 
wafers I set the time for the overetch at 0 s.

        Test Wafer 1:
thicknesses of p+ doped poly before and after etch

                T       L        C      B       R
before etch     3538    3565    3565    3550    3578
After 30s etch  2200    2187    2205    2213    2213
        Average Etch rate  ~ 2600 A /min
        Also uniformity is pretty good

        Test Wafer 2
                T       L       C       b       R
before etc      3567    3602    3586    3594    3575
After 40s etch  1993    1960    1986    1993    1980

Average etch rate ~ 2400 A /min. Excellent unifority
I had another wafer with ~ 3000 A of poly. It took 
around 75 seconds to etch through (endpoint). which 	corresponds 2400 A
/min.

I also ran my main wafers (12) through. All of them 
look good and the etch times were very repeatable. The 
etch patterns look excellent.	
		Kailash