From mcvittie at cis.Stanford.EDU Tue May 25 09:24:05 2004 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Tue, 25 May 2004 09:24:05 -0700 (PDT) Subject: No Lam Etching Deeper Than 2 um Message-ID: Lam Users, I was told yesterday that someone is using doing deep (> 2um) etching in Lam. This a problem in that long HBr etching deposits a Br byproduct on the chamber walls, which can create a major particle problem. If you are using the Lam to etch deeper than 2um, I want you to stop IMMEDIATELY and talk to me. You will need to start running a post etch chamber cleaning process after every few wafers. For the standard etch processes using HBr/Cl2, the C2F6 breakthru step is enough to keep the chamber walls clean. Thanks, Jim -- -------------------------------------------------------------- Jim McVittie, Ph.D. Senior Research Scientist Allen Center for Integrated Systems Electrical Engineering Stanford University jmcvittie at stanford.edu Rm. 336, 330 Serra Mall Fax: (650) 723-4659 Stanford, CA 94305-4075 Tel: (650) 725-3640