From mcvittie at cis.Stanford.EDU Wed Mar 21 08:59:18 2001 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Wed, 21 Mar 2001 08:59:18 -0800 (PST) Subject: photoresist removal In-Reply-To: Message-ID: Sanli, The best way to remove your implanted resist is to use the Matrix either with forming gas (N2/H2) or with O2 plus CF4. THis a pretty standard method in industry. Unfortunalely, niether forming gas or Cf4 are presently plumbed to the Matrix. Sometime ago I requested that one of these gases be added. An alternative method is to contact one of the wet stripper vendors and get one of their magic strips. I can give you some names. The final method is to use the present O2 matrix plasma and H2S4/H2O2. With the Matrix using O2 you only want to take off the top layer and not over heat the resist to point that bubbles form and blow-up. To do this you want run with the pins up (wafer off the heated electrode) and keep both the power and the time down. If you want, I can generate a Mayrix program to do this. Jim -------------------------------------------------------------- James P. McVittie Senior Research Scientist Allen Center for Integrated Systems jmcvittie at stanford.edu Stanford University Tel: (650) 725-3640 Rm. 336, 330 Serra Mall Fax: (650) 723-4659 Stanford, CA 94305-4075 On Tue, 20 Mar 2001, Sanli Ergun wrote: > > Hi everybody, > I had a high energy (90 kEV Phosphorus) ion implantation on my wafers. The > resist thickness was 2.4 um. I have gone through matrix and wbnonmetal > several times back and forth, but I can't get rid of some residues on the > edges. Did any of you experience such a problem before, and figure out a > way to solve it? > > Thanks, > > Sanli > > > From sanli at piezo.Stanford.EDU Wed Mar 21 09:22:01 2001 From: sanli at piezo.Stanford.EDU (Sanli Ergun) Date: Wed, 21 Mar 2001 09:22:01 -0800 (PST) Subject: photoresist removal In-Reply-To: Message-ID: Hi, Thanks for your response. I spent about two days going back and forth between matrix and H2SO4/H2O2, and finally got rid of it. However, for next time it would be great to have such a program. I'll ask you when I need it again. Thanks, On Wed, 21 Mar 2001, Jim McVittie wrote: > Sanli, > > The best way to remove your implanted resist is to use the Matrix either > with forming gas (N2/H2) or with O2 plus CF4. THis a pretty standard > method in industry. Unfortunalely, niether forming gas or Cf4 are > presently plumbed to the Matrix. Sometime ago I requested that one of > these gases be added. An alternative method is to contact one of the wet > stripper vendors and get one of their magic strips. I can give you some > names. The final method is to use the present O2 matrix plasma and > H2S4/H2O2. With the Matrix using O2 you only want to take off the top > layer and not over heat the resist to point that bubbles form and blow-up. > To do this you want run with the pins up (wafer off the heated electrode) > and keep both the power and the time down. If you want, I can generate > a Mayrix program to do this. > Jim > -------------------------------------------------------------- > James P. McVittie Senior Research Scientist > Allen Center for Integrated Systems jmcvittie at stanford.edu > Stanford University Tel: (650) 725-3640 > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > Stanford, CA 94305-4075 > > On Tue, 20 Mar 2001, Sanli Ergun wrote: > > > > > Hi everybody, > > I had a high energy (90 kEV Phosphorus) ion implantation on my wafers. The > > resist thickness was 2.4 um. I have gone through matrix and wbnonmetal > > several times back and forth, but I can't get rid of some residues on the > > edges. Did any of you experience such a problem before, and figure out a > > way to solve it? > > > > Thanks, > > > > Sanli > > > > > > > > ________________________________________________________ Arif Sanli Ergun Engineering Research Associate E. L. Ginzton Laboratory, Room : 130, Stanford University, Stanford, CA, 94305-4085 Phone: (650) 723-8447 Fax : (650) 725-7509 www : http://piezo.stanford.edu/group/IRP/sanliIRP.html