photoresist removal

Jim McVittie mcvittie at cis.Stanford.EDU
Wed Mar 21 08:59:18 PST 2001


The best way to remove your implanted resist is to use the Matrix either
with forming gas (N2/H2) or with O2 plus CF4. THis a pretty standard
method in industry. Unfortunalely, niether forming gas or Cf4 are
presently plumbed to the Matrix. Sometime ago I requested that one of
these gases be added. An alternative method is to contact one of the wet
stripper vendors and get one of their magic strips. I can give you some
names. The final method is to use the present O2 matrix plasma and
H2S4/H2O2. With the Matrix using O2 you only want to take off the top
layer and not over heat the resist to point that bubbles form and blow-up.
To do this you want run with the pins up (wafer off the heated electrode)
and keep both the power and the time down. If you want, I can generate
a Mayrix program to do this.
James P. McVittie	                Senior Research Scientist
Allen Center for Integrated Systems     jmcvittie at
Stanford University             	Tel: (650) 725-3640	
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075	

On Tue, 20 Mar 2001, Sanli Ergun wrote:

> Hi everybody,
> I had a high energy (90 kEV Phosphorus) ion implantation on my wafers. The
> resist thickness was 2.4 um. I have gone through matrix and wbnonmetal
> several times back and forth, but I can't get rid of some residues on the
> edges. Did any of you experience such a problem before, and figure out a
> way to solve it?
> Thanks,
> Sanli

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