Comment mrc SNF 2007-01-11 14:12:44: etch rate seems different

mmager at snf.stanford.edu mmager at snf.stanford.edu
Thu Jan 11 14:12:44 PST 2007


I'm using the oxide etch 15-F23/2-O2 at 50mT/100W recipe. Last year I would usually get about 400A/min and now I'm getting about 200A/min. Also, the chamber pressure seems to jump more. I used to set it at 45mT and it would reach 50mT after arcing a plasma. Just now I set it at 40mT and it jumped to 55mT. Not really a problem, just FYI.




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