Comment mrc SNF 2010-11-09 00:57:44: CHF3/O2 etch rate reduced when flickering

[alexneu at snf.stanford.edu]

Performed an etch of PECVD oxide using 1.5/15 sccm of O2/CHF3, 50 mT, 50 W. Plasma was flickering but stayed on  with 0 reflection the entire run. Etch rate was ~20nm/min instead of typical 30nm/min.