From acremann at SLAC.Stanford.EDU  Mon Dec  2 16:48:00 2002
From: acremann at SLAC.Stanford.EDU (Yves Acremann)
Date: Mon, 02 Dec 2002 16:48:00 -0800
Subject: etching SiN on Pt?
Message-ID: <3DEBFF40.6060605@ssrl.slac.stanford.edu>

Hi

We need to etch SiN on a Pt layer using MRC. Is there a process which is 
reasonabely selective?
Our SiN layer is 100nm thick, masked by 10nm Pt and sitting on 20nm Pt. 
Does anyone have some
experience? Are there other masking materials you recommend?

We also want to etch 10nm SiN layers with the MRC, masked by 340nm PMMA. 
Does anyone know if the etch rate for PMMA compared to SiN allows to do that?

Thanks
Yves





From acremann at SLAC.Stanford.EDU  Fri Dec  6 10:29:47 2002
From: acremann at SLAC.Stanford.EDU (acremann at SLAC.Stanford.EDU)
Date: Fri, 06 Dec 2002 10:29:47 -0800 (PST)
Subject: SiO2 recipies for MRC
Message-ID: <01KPPIPFHNJMAAZMLR@SSRL.SLAC.STANFORD.EDU>

Hi

I have a question about the MRC recipies in the book: There are
different processes for SiO2, i.e.

PROCESS 1
2 sccm O2
15 sccm F23
50mT
100W
rate: 200A/min

PROCESS 2
3 sccm O2
15 sccm CHF3
50mT
50W
rate: 600A/min


According to the notes posted on the machine, CHF3 seams to be the
same as F23 and there is no other inlet for CHF3.
Why is the rate so much different then? Is it just the
difference in oxygen flow?

I would like to use process 2 as it uses much less RF power and
therefore sputters the sample much less than process 1 (as we have a thn
Pt layer under the SiO2.

Does anyone have some experience with a process like process 2?
Is the rate aprox. correct for SiO2 grown with STS?

Thenk you
Yves