SiO2 recipies for MRC

acremann at SLAC.Stanford.EDU acremann at SLAC.Stanford.EDU
Fri Dec 6 10:29:47 PST 2002


Hi

I have a question about the MRC recipies in the book: There are
different processes for SiO2, i.e.

PROCESS 1
2 sccm O2
15 sccm F23
50mT
100W
rate: 200A/min

PROCESS 2
3 sccm O2
15 sccm CHF3
50mT
50W
rate: 600A/min


According to the notes posted on the machine, CHF3 seams to be the
same as F23 and there is no other inlet for CHF3.
Why is the rate so much different then? Is it just the
difference in oxygen flow?

I would like to use process 2 as it uses much less RF power and
therefore sputters the sample much less than process 1 (as we have a thn
Pt layer under the SiO2.

Does anyone have some experience with a process like process 2?
Is the rate aprox. correct for SiO2 grown with STS?

Thenk you
Yves



More information about the mrc mailing list