post HBr rinse (fwd)
latta at snf.stanford.edu
Wed May 17 14:52:56 PDT 2000
Chamber C users,
This is a discsuuion which has been occuring among the lampoly users.
Please pay attention if you use chamber C (it is the only chamber with
HBr at this point).
---------- Forwarded message ----------
Date: Wed, 17 May 2000 13:54:14 -0700 (PDT)
From: Jim McVittie <mcvittie at cis.Stanford.EDU>
To: Sharleen Beckwith <beckwith at snf.stanford.edu>
Cc: lampoly at crystal.Stanford.EDU
Subject: Re: post HBr rinse
This new rinse procedure is only necessary if you are not doing the
recommanded HF dip, immediately after etching. Do not store HBr etched
wafers in a wafer box without at least giving them a DI rinse. The problem
is that water from the air can react with the Br-Si-O layer on the
sidewalls of etched structures and cause the release of Br. If the wafers
are in a sealed box, there is a possibility that a damagous level of Br
could develop in the box. THis note may be an overreaction but it is
better to error on the safe side.
On Wed, 17 May 2000, Sharleen Beckwith wrote:
> Jim McVittie recently attended a conference where he learned that we should
> be rinsing our wafers if they have been in an HBr environment.
> Please put your wafers through a standard rinse cycle at wbnonmetal if you
> are etching your wafers using HBr.
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