From kevhuang at stanford.edu  Fri Jan 27 15:27:37 2006
From: kevhuang at stanford.edu (Huang Kevin)
Date: Fri, 27 Jan 2006 15:27:37 -0800
Subject: etching SiO2 in deep trenches
Message-ID: <93586f8c0601271527k4ea9c200i3aed3fed5132ffa4@mail.gmail.com>

Hi,
        I would like to etch SiO2 that are between Si trenches that
are 1.5um wide, 20~30 um deep and separated by 2 um gaps.  Does anyone
know if
p5000 can etch all the way down the trenches to clean out the oxide?

Thanks.

Kevin

--
==================================
Kevin Huang
Ph.D. Student, Peumans Group
Stanford Organic Electronics Lab
Dept. of Electrical Engineering
Email: kevhuang at stanford.edu
Phone: (650) 725-6924
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