question about etching oxide on thin double-polished Si wafer (300um thick)

[Insun Park]

Dear p5000 users,

I tried to etch 2um thick thermal oxide grown on thin double-polished Si
wafer (300um thick), but after 10 seconds of main etch step, the process
stopped.
I found that He leak in chamber monitor screen is high reaching 8sccm.
I am suspecting that thin wafers may cause He leak.

Does anyone have experience with etching oxide on thin double-polished
wafer?

Thanks,

Insun
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