Sapphire Etching in PQuest

Michael Wiemer mwiemer at stanford.edu
Tue Jun 13 13:48:14 PDT 2006


Sounds fine to me. And it is a Cl process so I don't see why any of this
would be a problem during Cl etch times.

My 2 cents,

-Mike


> -----Original Message-----
> From: Ed Myers [mailto:edmyers at stanford.edu] 
> Sent: Tuesday, June 13, 2006 1:09 PM
> To: Jim McVittie; pquest at snf.Stanford.EDU
> Subject: Re: Sapphire Etching in PQuest
> 
> 
> 
> Secondly,  Can this be done during the Cl weeks or does it need to be 
> done during the fluorine week?
> 
> At 01:05 PM 6/13/2006, Jim McVittie wrote:
> >PQuest Users,
> >
> >I have a user, who wants to etch a dense arrays of 1 um and 0.5 um
> >diameter holes 0.5um deep into 2 " diameter sapphire (Al2O3) 
> wafers using
> >a BCl3/Cl2/Ar process in the PQuest. About a 1/3 of the area 
> surface area
> >or about 3.2 sq cm is to be etched. He will be using a 
> resist mask. There
> >is no new material involve being here since Al etch always 
> involve etching
> >some Al2O3, and I belief some sapphire etching has been 
> attempted in the
> >past. But clearly there will be much more Al2O3 and resist 
> by-products
> >than we usually see.  If you have a concern about letting 
> the user do this
> >process in the PQ, please reply. My understanding is that 
> this is a one
> >time need.
> >
> >Thanks, Jim
> >
> >
> >--
> >--------------------------------------------------------------
> >Jim McVittie, Ph.D.                     Senior Research Scientist
> >Allen Center for Integrated Systems     Electrical Engineering
> >Stanford University                     jmcvittie at stanford.edu
> >Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
> >Stanford, CA 94305-4075                 Tel: (650) 725-3640
> 
> 
> 
> 




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