From jwc at snf.stanford.edu Fri Mar 28 10:09:14 2008 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 28 Mar 2008 09:09:14 -0800 Subject: TODAY -- Friday March 28, 2008 RAITH USA presentation to discuss applications and capabilities of their new Ion LiNE nano-FIB. tool -- CIS 101 10:00 - 10:40 AM Message-ID: <47ED263A.7090101@snf.stanford.edu> Greetings Raith, Ebeam, and SNF Lab members: Today, Friday March 28, 2008 in CIS 101 from 10:00 - 10:40 AM We will be having several members of RAITH, both from Dortmund, Germany and the USA visit SNF to discuss potential applications and review the capabilities of their new ionLiNE nano-FIB system. This new system is a result of an extensive collaborative effort in Europe between a number of companies and universities. http://www.nanofib.com/ Within this project this team have made some remarkable innovations in developing a new class of FIB tool that can provide a new avenue of nanofabrication patterning as we move into truly nano-scale device dimensions. All Users and Lab Members wishing to learn more, or to discuss potential new applications or fabrication questions using these tools are welcome to attend. This could become an opportunity for researchers at Stanford to get some samples run to test your ideas and develop novel application of the tool for your work. This is NOT just another Focused Ion Beam tool... Everyone is welcome. Thank you, James Conway 650-725-7075 The Raith ionLiNE is an advanced focused ion-beam nanofabrication instrument designed and characterized to meet lithography tool standards. The unique components are the patented NanoFIB column, the ELPHY pattern generator, the laser interferometer stage, and a complete lithography software package, all integrated into one system to enable advanced ion-beam patterning. The ion-beam source and column produce the beam stability required for automated advanced lithography. With a small beam diameter and nominal beam tails, the focused ion-beam offers high lateral selectivity, enabling fabricated feature sizes of 10 nanometers and below. Exposures are made in a variety of scan modes using a high speed 16-bit pattern generator. The pattern generator technology enables nanosecond ion dose control and 3D grey level patterning. For applications covering areas larger than a single exposure field, the laser interferometer stage provides positioning resolution of 1 nm. With these unique features, the ionLiNE delivers critical lithography specifications, such as stitching and overlay accuracies. The lithography software permits the generation or import of complex patterns in the widely accepted GDSII data format, job automation for overnight patterning without user interaction, automated dose control, metrology, and automated focus control via height sensing schemes. Fixed Beam Moving Stage (FBMS), a zero stitching error writing mode for the seamless exposure of extended structures, completes the advanced patterning of the ionLiNE. Additional options, such as a gas-injection system and nanomanipulators, can be added to allow unique nanofabrication and nanoengineering capabilities. -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Raith ionLiNE.pdf Type: application/x-pdf Size: 513567 bytes Desc: not available URL: