Comment raith SNF 2011-01-06 14:21:14: OUTSTANDING RESULTS ON QUAL WRITES

jwc at snf.stanford.edu jwc at snf.stanford.edu
Thu Jan 6 14:21:14 PST 2011


I am happy to report that initial measurements of patterns written during the qualification run yesterday exhibited outstanding results for pattern  linewidth and dot diameters. All areas across the wafer were in fine focus and showed near perfect stitching.
Min dot diameter at threshold to clear dose 7 - 8.5 nm at ~ 0.05 fAsec dose.
Single Pixel Lines in the range of 10 - 12 nm at 260 - 280 pC/cm dose
We are currently setting up ebeam line scan files to measure write field to write field stitching accuracy as it is smaller than the verniers normally used to measure stitching by SEM inspection.
So far all measurements are exceeding system manufacturers specificiations.   At 10 kV 30 um aperture beam waist FWHM 50% = 2- 3 nm on Au on Carbon thin films.  More system measurements and characterization is in the queue.
Have a nice day
JWC




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