From jwc at snf.stanford.edu Wed Jan 5 13:51:21 2005 From: jwc at snf.stanford.edu (James Conway) Date: Wed, 05 Jan 2005 13:51:21 -0800 Subject: Raith Status report 01052005:1230 hours System access delayed through Friday. Message-ID: <41DC6159.7080008@snf.stanford.edu> Greetings Raith Users: There will be a delay in the previously announced schedule to return the system to users access through Friday Noon. Users with reservations for RAITH on the CORAL schedule before Noon Friday should remove their reservations and reschedule for a later time. Over the holiday we completed a 200 hour bake out of the System after the PM routine was performed just before the shut down. We replaced the Field Emission Gun tip, aperture plate, and performing many cleanings and inspection routines of various sub-systems on the RAITH. Completed thus far were the following: 1. Replaced the FE- Gun and multi-hole aperture plate with new parts. 2. System Administration to both the LEO and RAITH computers, updating all windows patches and antivirus software definitions. Swept the system of viruses and spy ware. NO Viruses found. Backed up the system to HD. 3. Load Lock and transfer arm and track maintenance as scheduled. Also tensioned the bands to this section 4. Inspection and Cleaning of the System Chamber and Piezo control kinetic mounts. Check exchange positions for transfer arm. 5. Pole Piece removed inspected and cleaned. 6. Realigned the laser interferometer optimizing the laser signal to 12 Volt Peak to Peak, an optimal value. 7. Stage Motor Controller: Calibrated the X/Y Sin-Cosine control board and checked the motors for current draw values. Tested the motor controller power supply output voltage. 8. Exchanged the loaner Water Chiller with our repaired unit. 9. Performed an overnight bake out and a brief 'dry' run up of the FE- gun up to 20 keV without the EHT voltage applied to evaluate the cleanliness of the anode and aperture plates and FE-gun to evaluate arcing concerns. The extended bake out of the system completed 1800 hours December 25, 2004 and upon cooling the gun section reached 9.8 E -011 mBar. Upon arrival yesterday I observed 1.8 E - 010 mbar vacuum. This is wonderful vacuum level to start conditioning the FE-Gun and performing the service run up greatly reducing the chance of FE-Gun arcing during the service run up. Yesterday afternoon we started the service and conditioning run up of the FE-Gun. While one minor EHT trip event was encountered as we initially brought the Fe-Gun on line, the rest of the ramp to 1000 Volts went smoothly and we were able to maintain good vacuum. We will be continuing this work, resuming this afternoon, and we plan to perform a very slow and cautious run up to 10 KeV level before we start alignments to the mechanical position of the FE-Gun, check out the E/O section of the system, and finally performing all the usual calibrations and adjustments of the gun, aperture(s), and stigmation centering functions. After ~24 hours of beam time at this level I hope to be able to qualify the system and hand off access to users late this week. NOTE: There remain a number of issues still to be addressed to effectively eliminate all the issues we encountered in the last quarter of the year mainly related to image drift on image acquisition during Write Field alignment; leakage and alignment of the Raith beam Blanker; and elimination of the extra shot spots on reduced scan fields. The remain a few other nagging concerns related to Single Pixel Line resolution and circularity of Circle and dot shot features written with the system we hope will be eliminated by the FE-Gun exchange and PM of the SEM column. I expect this work to take much of the week to complete but will offer some access to RAITH Champions scheduled on the system after Friday Noon and through the weekend. But with the caveat that only those whom are willing to evaluate their results and promptly return to me their measurements will get access to the system until I have finished all outstanding action items. FYI: I am writing up a document that describes the PM routine task and will add this to my System Qualification Process Control Monitoring (PCM) testing documentation previously posted and also in RAITH Notebook No. 2 in the Lab. Thank you for your support! James Conway Previous announcement WED DEC. 8, 2004: Greetings RAITH Users: We will be taking the system off line from Monday December 13, 2004 at 10 00 AM through January 5, 12 00 hours. The coral schedule has been blocked out for this period. Please do not attempt to make reservation during this period. We will make every effort to have the system back up completing all adjustments to the system, and have the system performance qualified, by NOON January 5, 2005 if all goes well through the PM, shutdown, start up and qualification testing period. Should unforeseen circumstances cause additional delays I will be posting to this email discussion list the afternoon of January 4, 2005. Please stay tuned. Thank you for your support! James Conway SNF -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Thu Jan 6 18:00:57 2005 From: jwc at snf.stanford.edu (James Conway) Date: Thu, 06 Jan 2005 18:00:57 -0800 Subject: Raith Status January 06,2005: 1745 hours System coming back up -- Qualifications tomorrow. Message-ID: <41DDED59.60707@snf.stanford.edu> Greetings: Working with Mike Santomango from Zeiss SMT Field Service we were able to bring up the platform up after the extended bake out over the holidays and perform the service run up of the FE-Gun. We now have nearly 50 hours of filament time on a fresh new FE-Gun. This afternoon we recalibrated and adjusted for proper centering of the Gun, Aperture, and Stigmator alignments functions settings. These are preliminary adjustments and they will certainly drift somewhat as the Fe-Gun runs itself in. We will need perform additional checks and alignments next week. Emission Current is slowly coming up as the Fe-Gun conditions and runs itself in to suitable operation. I am allowing the system to stabilize overnight and will attempt to perform the qualification testing in the morning. Vacuum levels are optimal for the system and we have now had operation test through 15 kV acceleration voltage. SEM imaging resolution is good with a 5 nm features being resolved at 10 kV 30 um apt. WD = 5 mm. Brightness is much improved from the state we were in before we shut down the system for the holidays. It is hoped that we will be able to open up access for RAITH champions only allowing usage and testing on the system tomorrow afternoon and throughout the weekend. These users will be expected to promptly report and document their results obtained to aid in establishing baselines for performance on the system. There will not be any operations above 15 kV until I am satisfied that it will be safe to operate at higher voltages. Further testing is required to ensure that all outstanding issues of concern are addressed. See my previous emails for further information on many items I am working on to resolve and return the system into proper order. Users with specific concerns are encouraged to see me during my office hour between 8:30 and 9:30 AM. Next Raith update will go out tomorrow afternoon. Thank you for your support! James Conway From jwc at snf.stanford.edu Fri Jan 7 10:51:54 2005 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 07 Jan 2005 10:51:54 -0800 Subject: Raith Status 01072005:1030 AM -- users access will be delayed so we can continue troubleshooting. Message-ID: <41DEDA4A.8020603@snf.stanford.edu> Greetings Raith Users: An unexpected EHT Trip encountered overnight at 0531 hours this morning. The system was up with the beam on idling unblanked at 10 kV. A EHT trip error 519 was recorded on the server and the system software shut the gun down. Vacuum level elevated abruptly with this event to 3.38 E -009 mbar level and has been very slowly returning to the upper E -010 mbar level. I cannot explain why this occurred as everything was looking very good when I left last evening. Actions: Returning back to run up and FE-gun conditioning and will be slowly bringing up the gun this morning. I will continue to evaluate this afternoon but expect I will require much of the weekend to allow the system to stabilize and run in the gun. Users on the Coral schedule should now remove their reservations and reschedule for a later time. Do not expect access to the system through mid-day Monday at the earliest unless I post to this list otherwise later this afternoon. Thank you for your support! James Conway From jwc at snf.stanford.edu Fri Jan 7 17:16:45 2005 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 07 Jan 2005 17:16:45 -0800 Subject: System coming back up online for RAITH Champions over the weekend. READ ME ALL! Message-ID: <41DF347D.8090908@snf.stanford.edu> Greetings: I was able to restore normal FE-Gun operations after the EHT trip we had early this morning. The Gun continues to run in and it will be expected that the emission will slowly increase towards a target of 119 uA over the weekend. Currently EHT I is 60.4 uA. Vacuum has returned to 7.0E-010 mbar levels which is optimal. This evening I am running the qualification run at 10 kV, 30 um apt., 5 mm working distance. I have saved suitable settings for the Gun/Apt alignment and the writefield alignment values to the default mic.ini file so all users can accept these values as they come on the system if they desire to when prompted. I have several more issues to resolve on the system related to beam blanking leakage concerns and shot dots appearing out of the reduced rastering areas. Note: I was unable to obtain contamination dots as would be normal on the system. However examining the scan raster artifacts I do see the minute dot normal artifacts. QED: We do have a minute beam but for reasons unknown when we go into spot mode using the software something strange may be occurring with the placement or dwell time of the dot shots. What I am observing with longer dwell time shots are features several microns in diameter and very diffuse -- as if the system loses focus during the shot operation. Very strange but true. So after many hours attempting to get through this challenge; I have decided to proceed with an extended write of a number of patterns and we will examine the EBL results on this chip on Monday. I am also conducting a blanker leakage test to evaluate the beam blankers that dwell on a site for various increasing dwell times then moves to a new spot and repeats. Thanks go out to Bernd Stegemann at RAITH GmbH whom provided this test as a macro for me to run on the system. Please allow this write to complete in its entirety -- I expect it to finish between 6 and 8 PM this evening but it may take longer. DO NOT ABORT THIS WRITE. I am placing the system on CORAL into 'yellow light mode' and RAITH Champions may access the system for their use this weekend but with the caveat that I expect these users to promptly report their results and provide data and images to me of their EBL results. This will assist me in establishing new baselines for performance for the system. Many eyes are better than one. All other users whom wish to access the system if it is not in use by raith champions are requested to call me on my cell phone for permission to utilize the system. Limitations of Use: NO OPERATIONS ON THE SYSTEM TO EXCEED 15 kV ACCELERATION VOLTAGE. All materials going into the system shall be baked for 90 sec. on the 90 degree hot plate in the Ebeam lab, or oven baked at any temperature greater than 90 degrees for 30 minutes. This is to ensure we maintain a clean system as we condition the system and run in the FE-Gun. Please contact me if you have any concerns. Thank you for your support! James Conway cell 415-412-4825 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Mon Jan 10 12:01:09 2005 From: jwc at snf.stanford.edu (James Conway) Date: Mon, 10 Jan 2005 12:01:09 -0800 Subject: Statis: RAITH did not pass qualification. System remains in Yellow until fault is determined... Message-ID: <41E2DF05.4090005@snf.stanford.edu> Greetings: My Raith ebeam qualification run did not pass performance criteria and we are not returning the system to users access today. I will leave the system in yellow light mode but may upgrade to red light shutdown status if my run this afternoon continues to show the poor EBL results. The delivered area dose seems to be much higher than we specified. All single shot dots and single pixel lines (SPL's) were written were much larger i.e., wider than ever acquired in the past. Features are too large and gross to evaluate stitching. The PCM qualification run is a series of patterns: * 10 X 10 X 1000 um array of origin_targets which contain both single shot dots and various raith circles from 25, 50, and 100 nm widths overlaid over a normal XY target. Result: All the ring are enormous on the order of 1 - 5 um in width. * Several demo.csf patterns which give us much information on area, line, and dot doses, high resolution SPL's, deflection test, and write field to write field stitching and proximity. Results: All features written much larger than specified. Doses appear really large by a factor of two! * Stitching SOS.csf: stitching pattern gives us write field to write field stitching patterns that we can measure automatically. Results: Features too large to evaluate stitching with. * SPL10X10.csf pattern is our new main Process Control Monitoring pattern. This pattern gives us a minimum SPL we can resolved and dot shot diameters placed across 2X2 100 um stitching fields. Results: The dose factor one lines were nearly 5 um wide. all dot shot areas fully developed out. higher dosed single pixel lines fully developed out. * Line and Space pattern blocks. This pattern renders minimum features we can resolve as area line patterns with increasing pitch. No line features were resolved and all pattern blocks fully cleared and developed out. * Flower pattern: Deflection and single pixel line test. Results: Only the lowest dose single pixel lines at dose factor 0.5 resolved and were microns in size. Conclusions: During this qualification run the exposure doses delivered were twice to three times that measured on the picoammeter during the set up for this run. The large micron scale features seen during contamination dot shot attempts during Fridays session may have been due to either a problem with the E/O card or with the spot functions as if we lost focus during the shot delivery event. More test will conducted this afternoon and tomorrow afternoon to troubleshoot the cause of this problem. We are currently down on the system in yellow light mode until further notice. Thank you, James Conway 01102005: 1200 noon -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Mon Jan 10 15:44:14 2005 From: jwc at snf.stanford.edu (James Conway) Date: Mon, 10 Jan 2005 15:44:14 -0800 Subject: Raith Status 01102005:1530 hours... Qualification in progress -- yellow through noon tomorrow. Message-ID: <41E3134E.1080504@snf.stanford.edu> Greetings: I checked out the system and my exposure parameters thoroughly while attempting to determine what went wrong with yesterday's ebeam write. This qualification run the doses were very much higher than specified. The only thing I observed was that there has been a significant jump upwards in Beam Current (Beam I) measuring through the 30 um aperture. This could in fact be why everything I wrote was so overexposed. But this would not account for the fact that contamination dots were so difficult to generate or image. Note I did bake my sample at 90 degrees Celsius for 90 seconds while yesterday I had forgotten to bake the sample before loading into the system. Today's session went much better. Default values saved yesterday of Gun and Aperture alignment settings to the mic.ini files rendered very nice shots down to 12 - 15 nm with 22 nm being the normal using the short shot spot mode upon loading my sample with little adjustment required. (i.e., the short shot is the left hand mouse button on the dot mode hot button on the toolbar.) I am repeating the QUALIFICATION WRITE having moved the entire write up 12 mm in V axis on my sample. (01072005_1PCM.pls now is 01072005_2PCM.pls) Watching the exposure, all appears to be normal would be observed. I will be inspecting this pattern in the late morning tomorrow when I go into the cleanroom. System will stay in 'yellow light mode' until I am satisfied everything on the system is operating optimally. Please stay tuned and if you utilize the system this evening be sure to make adequate notes of your exposure to aid my troubleshooting effort. All the best, James Conway From jwc at snf.stanford.edu Tue Jan 11 10:10:34 2005 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 11 Jan 2005 10:10:34 -0800 Subject: Announcement 2: Ebeam Town Hall Meeting on Friday January 21, 2004 2 -4 PM in CIS 101 Message-ID: <41E4169A.5080608@snf.stanford.edu> Greetings Ebeam Lab Users: The proposed date for the next Ebeam Town Meeting is Friday January 21, 2004 2 -4 PM in CIS 101 The Agenda remains open for your suggestions and additions: Agenda Items: Raith Scheduling on Coral; managing a limited resource. 20 minutes Seeking your contributions and opinions on our current usage policies and discussion and proposals of modifications to these policies. Discussions on methods users can implement to increase sample throughput on the system. 10 minutes Recent PCM testing results in brief. - 5 minutes Commonly Encountered Problems: - 15 minutes * Beam Drift due to Substrate Charging issues and discussion on methods * Write Field Alignment Challenges and how to solve them. * Stitching breaks in the V scan direction - To use or not to use Focus Correction By working distance. New Item: Raith Champions End of Year Project Summaries: Raith Champions are encouraged to briefly summarize their project goals and review the results they have obtained on the RAITH system. It is desired for you to present a PPT slide or two with your images and measurements to summarize your RAITH results. User feedback is requested on what needs improvement and desired hardware upgrades and software enhancements might be desired by Users. On the lighter side Users are also encouraged to present your best images and unusual results you may have obtained on the system ion the last year. Presenters will meet their results and project reporting requirement for SNF by giving us your update. RSVP your plan to attend and/or present to beamtools at snf.stanford.edu Thread: EBEAM TOWN HALL MEETING. Thanking you for your support, James Conway -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Tue Jan 11 11:20:12 2005 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 11 Jan 2005 11:20:12 -0800 Subject: Annoucement: PMMA Materials: NO MORE CHLOROBENZENE IN THE LAB AFTER FEB 1, 2005. Message-ID: <41E426EC.9080608@snf.stanford.edu> Announcement: PMMA Materials: NO MORE CHLOROBENZENE IN THE LAB AFTER FEB. 1, 2005. Greetings Lab Members: We are in the process of eliminating all Chlorobenzene based Resist systems and rolling over for lab member use to only Anisole based Resist systems used for Electron Beam Lithography in the SNF cleanroom. We hope to complete this roll over by February 1, 2005 and will remove all Chlorobenzene resist systems from the SNF cleanroom at that time. This change will affect all users working with the following PMMA materials: 2% 950K MW Poly-Methy-Methacrylate (PMMA) 5% 495K MW Poly-Methy-Methacrylate (PMMA) 9% 950K MW Poly-Methy-Methacrylate (PMMA) -- NOTE: This material is no longer stocked at SNF. ZEP-520-12 PMMA by Zeon Corp. We currently have small volumes of these materials in-house and will be making these materials available to lab members. Note that these new materials are plainly labeled with additional colored stickers and will be labeled with a 'A' in their chemical label to aid in their identification. SNF staff will be performing preliminary characterization of these materials; but it is up to the individual lab members to monitor and adjust their processes using these new materials as appropriate. This change is being made to enhance your individual safety and reduce everyone's exposure to toxic and potentially carcinogenic materials used in the SNF cleanroom. Please post your replies to beamtools at snf.stanford.edu with SUBJECT: ANISOLE RESIST Thank you for your support! James Conway Stanford Nanofabrication Facility -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Tue Jan 11 15:07:30 2005 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 11 Jan 2005 15:07:30 -0800 Subject: Shutdown raith SNF 2005-01-11 14:01:46: System performance failed to pass qualification Message-ID: <41E45C32.6040802@snf.stanford.edu> Hello Raith Users: I have placed the RAITH 150 system in 'Red light' i.e., shut down mode. Something very strange is going on and I have not been able to account for the problem to a specific cause thus far. Problem encountered: EBL Features written on PMMA using the system are coming out grossly over exposed and most features are developing completely out. Even the smallest dose specified are resulting in features much larger than the presumed spot size with SPL's on the order of 1 - 3 microns. Examination of the system protocol files yields the correct dose as previously determined for these film. These writes are on qualified 2% 950K MW PMMA material on Silicon and we have been using as reference samples from this wafer for nearly a year. Working with Raith to troubleshoot this phenomenon. More information after the next test, James Conway -------- Original Message -------- Subject: Shutdown raith SNF 2005-01-11 14:01:46: System performance failed to pass qualification Date: Tue, 11 Jan 2005 14:01:46 -0800 From: jwc at snf.stanford.edu To: raith-pcs at snf.stanford.edu High resolution features failed to be resolved and all features appear grossly overdosed. mallest single pixel lines at dose factor 1 are approximately 1 - 3 um (optical micr. 1000X PL) system placed into shut down mode. JWC 01112005:1356 hrs -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Thu Jan 13 18:47:19 2005 From: jwc at snf.stanford.edu (James Conway) Date: Thu, 13 Jan 2005 18:47:19 -0800 Subject: Problems continue w/ raith SNF 2005-01-13 18:20:23: System still cannot write high resolution features. SEM functions fine! Message-ID: <41E732B7.4030801@snf.stanford.edu> Raith SNF 2005-01-13 18:20:23: System still cannot write high resolution features. SEM functions fine! Good Evening Raith Users: I am continuing to work on the problems we have encountered after the shutdown and PM with much larger spots written than usual resulting in grossly overdosed area and single pixel line features. I am turning CORAL to 'yellow light' mode to all RAITH CHAMPIONS ONLY to utilize the system for SEM CD inspections and your troubleshooting if you desire. I will return to this effort from 10 - 1:00 tomorrow. (Friday Jan 14, 2004) Others call me if you wish to try overnight tonight. The SEM and Image Acquisition and Metrology sections are working fine and resolution in SEM mode is excellent. Minimum feature I resolved today was 10 nm at 10 kV., WD 5 mm, 30 um apt. While you may attempt to perform EBL writes, but I personally would desire you did not do this on critical work as your results may vary from what you normally expect to get from this system. Single shot dots are 100 nm in diameter with a 1.5 - 2.0 um blur or scattering artifact around these features. I performed several test writes today and will develop and evaluate in the morning. I have requested they ship me a new calibrated Electron Optics board to perform additional test. Other causes could be problems during unblanking with the objective lens controls, and the new installed FE-Gun emission settings. We continue to evaluate this problem and will resolve it ASAP with RAITH''s assistance. Thank you for your support! James Conway -------- Original Message -------- Subject: Problem raith SNF 2005-01-13 18:20:23: System still cannot write high resolution features. SEM functions fine! Date: Thu, 13 Jan 2005 18:20:23 -0800 From: jwc at snf.stanford.edu To: raith-pcs at snf.stanford.edu System still cannot write high resolution features. SEM functions fine! Requesting a new electron optics board. Placing system in yellow mode to allow RAITH Champion access for SEM and CD measurements. Your attempts at EBL may have poor results -- at your risk. Another set of eyes may see other problems leading to ID of root cause of problem. JWC 01132005:1800 hours High resolution features failed to be resolved and all features appear grossly overdosed. Smallest single pixel lines at dose factor 1 are approximately 1 - 3 um (optical micr. 1000X PL) system placed into shut down mode. [NOW CLEARED] JWC 01112005:1356 hrs -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Au_100kX.tif Type: image/tiff Size: 787028 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Au_250000kX.tif Type: image/tiff Size: 787028 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: shot_study4_HW_test_2350x.tif Type: image/tiff Size: 787028 bytes Desc: not available URL: From jwc at snf.stanford.edu Fri Jan 14 13:54:02 2005 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 14 Jan 2005 13:54:02 -0800 Subject: [Fwd: Comment raith SNF 2005-01-14 11:04:06: last nights EBL results much improved] Message-ID: <41E83F7A.2020200@snf.stanford.edu> Good Afternoon, With much pleasure and effort, I can announce that the system performance met with my expectations and I am willing to give it a preliminary qualification based on SEM inspection of patterns I wrote yesterday evening. While I was not able to locate or measure Single pixel lines in grating patterns below 134 nm I was able to see good SPL in a dose array of origin targets. Shots can be difficult to form but I was able to obtain a 13 nm short shot dot reproducing results from two days ago. While the root cause of the problem we were having was not specifically identified, I did check and reconnect all the cable runs yesterday afternoon and abruptly the system seemed to come back to normal performance levels. I also cycled the power to all the RAITH electronics package other than the laser, and finally reset the computers. I will let users work on the system over the weekend through Tuesday 10 AM. I will then repeat the qualification test on new substrates and resist and again evaluate performance using our PCM pattern test procedure. Thank you, James Conway -------- Original Message -------- Subject: Comment raith SNF 2005-01-14 11:04:06: last nights EBL results much improved Date: Fri, 14 Jan 2005 11:04:06 -0800 From: jwc at snf.stanford.edu To: raith-pcs at snf.stanford.edu Optical microscope inspection of test patterns written over night do not display the shot diameter problems we were encountering the previous days attempts to qualify the system. We will SEM these features for CD's and attempt to qualify the system and perform an additional write to confirm. Only changed made were checking all connections to the system and resetting all system hardware other than the LEO E/O and vacuum controller. JWC 01142005:1058 hours -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Wed Jan 19 10:03:39 2005 From: jwc at snf.stanford.edu (James Conway) Date: Wed, 19 Jan 2005 10:03:39 -0800 Subject: New FAQ: Write Field Alignment Error: ZOOM U or V exceeds limits allowed... In-Reply-To: <1105909775.41ead80f3d9b8@webmail.stanford.edu> References: <1105909775.41ead80f3d9b8@webmail.stanford.edu> Message-ID: <41EEA0FB.5060207@snf.stanford.edu> Josh and other RAITH Users: FAQ No TBD: Write Field Alignment Challenges: What to try if you get a ELPHY+ Zoom U or V exceeds limits error: If you hit the limits first check your Working Distance (W). If it is less than 5 mm - adjust W in the UVW Alignment Window then drive the stage to W = 5 mm (absolute) and repeat the write field alignment. You should get results on the order of Zoom U =1.48 and Zoom V + 1.5248 at 600 X magnification for the 100 um write field specification If you cannot complete the write field alignment THEN reduce to magnification to 550 - 580 x and reset the write field alignment window to Zoom U = 1.0, Zoom V =1.0 and repeat the WF alignment feature. I have been able to get to complete the procedure at 600 X on my user: jwc log in. The result although close to the limits my results after WF Alignment do not exceed the limits of Zoom U or V > 1.55 . This is giving me superb results for stitching and overlay alignment on the system. If you, or other users, are having continuing issues with this please call me. If I am in the lab, I would be happy to assist you. Today or tomorrow I will be testing the system in my user: test_user default user log in to ensure that the changes I made to the system settings were in fact transferred down to all current users on the RAITH 150. Hopefully everyone will be able to obtain optimal EBL results on the system. James Conway 01192005:1000 Josh Ratchford wrote: >Hi James, > >The Raith worked just fine for me last night and my patterns turned out to >be the feature sizes I expected. The only problem I had was with write >field alignment. The Raith prompted "Zoom (Y) would exceed limit", >followed by "For a sucessful correction readjust SEM stage and reset ELPHY. > >I know we had a conversation in the past about the ELPHY but I have forgot >the details. Could you please enlighten me? > >Thank you, > >Josh > >P.S. I thought I wouldn't like suiting up to use the raith but after last >night I found it more convienient to have access to the clean room rather >than the john. > > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Wed Jan 19 14:09:02 2005 From: jwc at snf.stanford.edu (James Conway) Date: Wed, 19 Jan 2005 14:09:02 -0800 Subject: ANISOLE based PMMA resist are now stocked in the LAB. Remove your old chemicals! Message-ID: <41EEDA7E.7090805@snf.stanford.edu> Greetings Ebeam and Raith Users: This morning I stocked 2% 950K Molecular Weight and 5% 495K Molecular Weight PMMA based in ANISOLE solvent into the solvent cabinet located in the chase of the SNF Cleanroom. These materials are plainly labeled with a letter 'A" following their product name and highlighted with different colored ID stickers on the Jar Cap. Users are encouraged to begin to utilize these materials and Users should check their process parameters for their specific application. I will be working with these materials this week and next, and will post my thickness function of spin speed data to these discussion list once they have been tested and confirmed. Users are directed not to take individual stocks of these materials from the SNF SUPPLIED BOTTLES. SNF Staff desires to minimize the amounts of hazardous chemicals stored into the cleanroom solvent cabinets both by lab members and SNF Staff. Users are reminded that no chemicals whatsoever are to be taken from the SNF cleanroom for use in other Stanford University labs located in other buildings. All Users are directed to finish up your by spinning onto wafers, or dispose of properly as hazardous waste all individual bottles of PMMA resist containing chlorobenzene stored in the cleanroom. NO individual bottles of PMMA should be stored in the left hand solvent cabinet with the SNF Lab stocked PMMA. I will be throwing out, or moving into other solvent cabinet all materials left in the Ebeam Lab tub at this location. Today I moved all users' individual PMMA materials in small bottles to the right hand solvent cabinet upper left hand shelf. In early February I will go through the solvent cabinet and remove and/or dispose of all chlorobenzene based resist systems stored in the SNF Cleanroom. This change is made to improve your personal safety and reduce the potential risk of exposure to toxic and carcinogenic materials utilized within the SNF cleanroom. Please reply to beamtools at snf.stanford.edu to express your queries and concerns regarding this change. Thank you for your support! James Conway SNF Ebeam Lab 650-725-7075 -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Thu Jan 20 11:40:30 2005 From: jwc at snf.stanford.edu (James Conway) Date: Thu, 20 Jan 2005 11:40:30 -0800 Subject: Reminder: Ebeam Town Hall Meeting on Friday January 21, 2004 2 -4 PM in CIS 101 Message-ID: <41F0092E.4070509@snf.stanford.edu> Greetings Ebeam Lab Users: The next Ebeam Town Meeting is tomorrow Friday January 21, 2004 2 -4 PM in CIS 101. It is hoped that you will join us and participate in our discussions. The Agenda remains open through 9 AM tomorrow for your additions: Agenda Items: Raith Scheduling on Coral; managing a limited resource. 20 minutes Seeking your contributions and opinions on our current usage policies and discussion and proposals of modifications to these policies. Plan to replace Chlorobenzene based PMMA resist with Anisole based resist systems. Recent PCM testing results in brief. - 5 minutes "Share the Ride" Discussion on methods users can implement to increase sample throughput. - 10 minutes Commonly Encountered Problems: - 15 minutes * Beam Drift due to Substrate Charging issues and discussion on methods * Write Field Alignment Challenges and how to solve them. * Stitching breaks in the V scan direction - To use or not to use Focus Correction By working distance. New Item: Raith Champions End of Year Project Summaries: Raith Champions are encouraged to briefly summarize their project goals and review the results they have obtained on the RAITH system. It is desired for you to present a PPT slide or two with your images and measurements to summarize your RAITH results. User feedback is requested on what needs improvement and desired hardware upgrades and software enhancements might be desired by Users. On the lighter side Users are also encouraged to present your best images and unusual results you may have obtained on the system in the last year. Presenters will meet their results and project reporting requirement for SNF by giving us your update. RSVP your plan to attend and/or present to beamtools at snf.stanford.edu Thread: EBEAM TOWN HALL MEETING. Thanking you for your support, James Conway -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Fri Jan 21 09:45:51 2005 From: jwc at snf.stanford.edu (James Conway) Date: Fri, 21 Jan 2005 09:45:51 -0800 Subject: TODAY: Ebeam Town Hall Meeting Friday January 21, 2004 2 -4 PM in CIS 101 Message-ID: <41F13FCF.7030804@snf.stanford.edu> Greetings Ebeam Lab Users: The Ebeam Town Meeting is today Friday January 21, 2004 2 -4 PM in CIS 101. It is hoped that you will join us and participate in our discussions. Agenda Items: Raith Scheduling on Coral; managing a limited resource. 20 minutes Seeking your contributions and opinions on our current usage policies and discussion and proposals of modifications to these policies. Plan to replace Chlorobenzene based PMMA resist with Anisole based resist systems. Recent PCM testing results in brief. - 5 minutes "Share the Ride" Discussion on methods users can implement to increase sample throughput. - 10 minutes Commonly Encountered Problems: - 15 minutes * Beam Drift due to Substrate Charging issues and discussion on methods * Write Field Alignment Challenges and how to solve them. * Stitching breaks in the V scan direction - To use or not to use Focus Correction By working distance. New Item: Raith Champions End of Year Project Summaries: Raith Champions are encouraged to briefly summarize their project goals and review the results they have obtained on the RAITH system. It is desired for you to present a PPT slide or two with your images and measurements to summarize your RAITH results. User feedback is requested on what needs improvement and desired hardware upgrades and software enhancements might be desired by Users. On the lighter side Users are also encouraged to present your best images and unusual results you may have obtained on the system in the last year. Presenters will meet their results and project reporting requirement for SNF by giving us your update. RSVP your plan to attend and/or present to beamtools at snf.stanford.edu Thread: EBEAM TOWN HALL MEETING. Thanking you for your support, James Conway -------------- next part -------------- An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Mon Jan 24 10:07:08 2005 From: jwc at snf.stanford.edu (James Conway) Date: Mon, 24 Jan 2005 10:07:08 -0800 Subject: Please use the time available this week on the RAITH Message-ID: <41F5394C.5080100@snf.stanford.edu> An HTML attachment was scrubbed... URL: From jwc at snf.stanford.edu Tue Jan 25 19:32:42 2005 From: jwc at snf.stanford.edu (James Conway) Date: Tue, 25 Jan 2005 19:32:42 -0800 Subject: resist In-Reply-To: <73C04570-6E67-11D9-96B9-000A95C39CC4@stanford.edu> References: <73C04570-6E67-11D9-96B9-000A95C39CC4@stanford.edu> Message-ID: <41F70F5A.7060101@snf.stanford.edu> Dirk: See me tomorrow PM and I will figured out the dilution ... EZ to prepare. Not a problem. I have a stock of 9% 950K PMMA in chlorobenzene that I use for dilution down to custom viscosities. I have 1.25 and 1.50 % 950K PMMA in several small batches prepared for my Scanning Probe Lithography collaboration with U Nevada-Reno. The 2% 950K MW PMMA we purchase prepared from Microchem; so I don't have to make it myself. Here are the curves you desire. [web link: [ Single Layer aka 2% 950K PMMA ] [5% 495K PMMA ] Everyone --> FYI: ANISOLE IS IN THE LAB! I am currently working on characterizing the anisole resist materials. I recently placed 2% 950K MW PMMA-anisole and 5% 495K MW PMMA - anisole in the solvent cabinet in the rear FAB chase for people to get started with their own process characterization. Microchem went to great effort to produce nearly identical materials. Have been working with these materials in Dortmund, DE and they are nearly the same. Remember the solvent is just a transport vehicle and once cured its the same stuff, i.e, PMMA Will post the PMMA anisole spin speed (f) thickness curves, optimized doses, and contrast curves just as soon as I finish the work. In coming week(s)... If people wish to take a spin with me they are welcome. Sign up is in my office or see me during my office hour. We will also maintain a supply of the Chlorobenzene based system for reference and critical project needs until we use up the supply. Likely we will overlap and have both in house through the next few weeks to a month. I also have a number of silicon wafers with various thickness including the spec. thickness in my collections. Happy to share with anyone needing these if you will report the data and results obtained. WATCH THE LABELS CAREFULLY! Thank you and good evening, James Conway Dirk Englund wrote: > Hi James, > > Could you mix a rather small amount of high-molecular weight (the one > that's normally used for 2% I believe) down to 4%? We want to get > about 300nm thickness on GaAs samples. So far, we've been using 2%, > but it coats too thin. And I'd like to stick with high molecular > weight since the recipe is already worked out for it and it's higher > accuracy. So if you give us the solution, I can spend a few hours > measuring a calibration curve. > > Also, you just mentioned on the phone that other cal. curves are > posted on the web -- could you tell me where? > > Thanks > > Peace-- > > Dirk -------------- next part -------------- An HTML attachment was scrubbed... URL: From jrgoldman at gmail.com Wed Jan 26 23:21:33 2005 From: jrgoldman at gmail.com (Jonathan Goldman) Date: Wed, 26 Jan 2005 23:21:33 -0800 Subject: Raith free until 1:30pm on Thursday Message-ID: <42e3322305012623217d832b91@mail.gmail.com> I wanted to let everyone know that Raith is free tomorrow before 1:30pm. I had a short reservation in the morning which I moved to later on Thursday since my I couldn't get my pieces coated (my card was not recognized by the Ginzton clean room).