ZEP- 520A Question on stripping on GaAs and Si substrates
jwc at snf.stanford.edu
Thu Apr 10 11:58:42 PDT 2008
The easiest and fastest means to remove completely ZEP-520 and most of
the PMMA blends is to RIE with O2 plasma.
You can also strip off completely, particularly if it is cross linked
thermally or after exposure to fluorine chemistries in the etchers, by
employing NMP based solvents with surfactants such as PRS-127 followed
by PRS-1000 Photoresist stripper or simply Microchem Remover PG heated
gently to above 40 degrees C.
Note that the ZEP -520 is so very high in contrast that even a 400 nm
film will likely clear with just a slight increase in dose or increase
development time. Try 55 µC/cm**2 at 10 keV.
Thank you for an excellent question!
Bryan Ellis wrote:
> Hi James,
> I have a question about the ZEP 520a resist when you have some time.
> I spun it onto a sample of GaAs and some Si samples this morning, but
> I got the spin speeds wrong so I have a thick layer (~400nm instead of
> 250nm). I tried to remove the resist from both the GaAs and the Si
> samples by soaking them in Acetone for an hour. When I took the
> samples out of the Acetone the Si samples were completely clean, but
> the GaAs sample still had resist on it (I don't think the resist
> thickness changed at all actually). Have you ever seen this before,
> and do you have any recommendations for how to remove the resist?
> Thanks for your help,
-------------- next part --------------
An HTML attachment was scrubbed...
More information about the raith