From pradeep.nataraj at gmail.com Sat Feb 2 19:28:51 2013 From: pradeep.nataraj at gmail.com (Pradeep Nataraj) Date: Sat, 2 Feb 2013 19:28:51 -0800 Subject: [savannah] Sunday noon deleted finished all today Message-ID: -------------- next part -------------- An HTML attachment was scrubbed... URL: From jprovine at stanford.edu Wed Feb 27 17:13:01 2013 From: jprovine at stanford.edu (J Provine) Date: Wed, 27 Feb 2013 17:13:01 -0800 Subject: [savannah] interesting talk for ald enthusiasts Message-ID: *Thursday, Feb 28,* *4 - 5pm* *MERL 203* *Light refreshments will be provided* **** *Thermal-ALD versus Plasma-ALD* **** Atomic Layer Deposition (ALD)is an important tool for Nanotechnology, which has created a need for atomic level deposition of high-quality thin film materials. ALD uses typically two chemicals to create alternate, saturated, chemical reactions on a surface, resulting in unique self-limiting growth with excellent features like conformality, uniformity, repeatability, and accurate thickness control. Typical growth rate is less than one molecule layer per deposition cycle. ALD produces amorphous, crystalline, or even epitaxial ultra thin pin-hole free films depending of materials, deposition temperature, and surface.**** **** In this lecture the mechanism of thermally-activated Chemical Vapor Deposition (CVD) will be used to introduce Thermal-ALD. The mechanisms of ALD will then be presented in detail along with experimental achievements. Several examples of depositions of selected materials using Thermal-ALD and Plasma-ALD will be used to illustrate advantages of the use of a high reactive precursor, such as an oxygen plasma. -------------- next part -------------- An HTML attachment was scrubbed... URL: