From shott at snf.stanford.edu Tue Jun 17 14:49:18 2003 From: shott at snf.stanford.edu (John Shott) Date: Tue, 17 Jun 2003 14:49:18 -0700 Subject: Test of specmat mailing list ... Message-ID: <3EEF8CDE.8706CFD9@snf.stanford.edu> Mary, Jim, Mike, and Mahnaz ... This is a test of the specmat at snf mailing list. Please let me know if you receive this ... Thanks, John From mahnaz at snf.stanford.edu Tue Jun 17 16:15:32 2003 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Tue, 17 Jun 2003 16:15:32 -0700 Subject: Test of specmat mailing list ... References: <3EEF8CDE.8706CFD9@snf.stanford.edu> Message-ID: <3EEFA113.69E4ABFB@snf.stanford.edu> I got it. mahnaz John Shott wrote: > Mary, Jim, Mike, and Mahnaz ... > > This is a test of the specmat at snf mailing list. Please let me know if you > receive this ... > > Thanks, > > John From mahnaz at snf.stanford.edu Thu Jun 19 17:01:22 2003 From: mahnaz at snf.stanford.edu (Mahnaz) Date: Thu, 19 Jun 2003 17:01:22 -0700 Subject: Chemicals Message-ID: <3EF24ED2.1E032918@snf.stanford.edu> Hello all For the sake of documentation: **I did ok LOR 20 A for james Liu of Photonic Power System Inc. for Lift off purpose ** I did ok Baker Aleg 200 and PRS 2000 for Hain Jun Kim Identical chemical to " prs-1000" and " prx-127" Both persons handed the MSDS to me and requested in person. mahnaz From mtang at snf.stanford.edu Fri Jun 27 15:58:13 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 27 Jun 2003 15:58:13 -0700 Subject: Tin/Cu Message-ID: <3EFCCC05.A6A34FC1@snf.stanford.edu> Hi all -- Aditi (coral login = kitu) has asked for copper and then tin to be deposited on her substrates (no break in vacuum between depositions). Since tin is a low melting temperature metal, will this be a problem for metalica? Are there any other concerns? Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu From mcvittie at snf.stanford.edu Mon Jun 30 12:15:09 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 30 Jun 2003 12:15:09 -0700 Subject: Tin/Cu References: <3EFCCC05.A6A34FC1@snf.stanford.edu> Message-ID: <3F008C3D.D24AF078@snf.stanford.edu> Mary, The melting point is not the issue. It is the vapor pressure is the concern. The vapor pressure of tin is not that bad. Tin has a vapor pressure of 1E-4 T at 997C. My cutoff for high vapor pressure materials is Indium, which has a vapor pressure.of 1E-4 T at 773C. By the way Copper is at 1E-4 T at 1017C, so there is not much difference between copper and tin. Jim Mary Tang wrote: > Hi all -- > > Aditi (coral login = kitu) has asked for copper and then tin to be > deposited on her substrates (no break in vacuum between depositions). > Since tin is a low melting temperature metal, will this be a problem for > metalica? Are there any other concerns? > > Mary > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mtang at snf.stanford.edu Mon Jun 30 13:06:07 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 30 Jun 2003 13:06:07 -0700 Subject: Tin/Cu References: <3EFCCC05.A6A34FC1@snf.stanford.edu> <3F008C3D.D24AF078@snf.stanford.edu> Message-ID: <3F00982F.14FE46BC@snf.stanford.edu> Thanks Jim -- I take it this means that In is OK for the metalica? Mary Jim McVittie wrote: > Mary, > > The melting point is not the issue. It is the vapor pressure is the concern. > The vapor pressure of tin is not that bad. Tin has a vapor pressure of 1E-4 > T at 997C. My cutoff for high vapor pressure materials is Indium, which has > a vapor pressure.of 1E-4 T at 773C. By the way Copper is at 1E-4 T at 1017C, > so there is not much difference between copper and tin. > > Jim > > Mary Tang wrote: > > > Hi all -- > > > > Aditi (coral login = kitu) has asked for copper and then tin to be > > deposited on her substrates (no break in vacuum between depositions). > > Since tin is a low melting temperature metal, will this be a problem for > > metalica? Are there any other concerns? > > > > Mary > > > > -- > > Mary X. Tang, Ph.D. > > National Nanofabrication Users' Network > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at snf.stanford.edu -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu From mtang at snf.stanford.edu Mon Jun 30 15:36:13 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 30 Jun 2003 15:36:13 -0700 Subject: Polyimide Message-ID: <3F00BB5D.3831166C@snf.stanford.edu> Hi all -- I did a quick google search on pyralin, which is, I take it, what people use for polyimide coating. A quick read-through seems to show that pyralin requires heat cure in order to become polyimide and that the monomer coating can be dissolved in NMP or some specialty solvent called "Brewer Science ARC cleaner." The polyimide monomer is only sparingly soluble in acetone or water. NMP is 2-N-methyl pyrolidinone -- a nice, safe, green solvent that appears in EMT-130 and most of the other metal-safe resist strippers in the lab. I'd suggest that we may be able to have people just use the laurel for polyimide and use NMP to rinse out the bowl and lid. I don't think there's a problem in mixing NMP and acetone waste at the laurel, because it all goes into a carboy anyway (on the svg track, solidifying polyimide could cause problems with the lines... but maybe I'm wrong in assuming this is less of a problem on the laurel?) Addendum: Dick just stopped by as I was writing this... He also says we should consider the PMMA problem -- currently, solutions with high concentrations of PMMA monomer are not allowed on tracks or the laurel because it is hard to clean with acetone... The FAQ section of the MicroChem website (http://www.microchem.com/products/pmma_faq.htm) says that PMMA can be removed with NMP as well, so maybe we ought to give the NMP a try? What do you all think? (Dick, by the way, has found some really good info from the Laurell people which might present a mechanical, as opposed to a chemical, solution.) Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu From mtang at snf.stanford.edu Mon Jun 30 15:46:24 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 30 Jun 2003 15:46:24 -0700 Subject: SPECMAT References: Message-ID: <3F00BDC0.93F28CF@snf.stanford.edu> Hi David -- Just additional few questions that I think the other SpecMat members are bound to ask you as well: 1. Where is your tungsten being deposited? (Any processing done outside of SNF needs to be carefully considered, because of possibly contamination issues...) 2. Where do your wafers go after the proposed Lampoly step? (Any other clean equipment?) 3. Do you have any literature references or experience with SF6 and the typical profiles you get with this? (I would strongly suggest you make an appointment to chat with Jim McVittie, our resident etch expert... I am nowhere near an expert, but has understood the prevailing wisdom is that SF6 gives you lots of undercutting -- the anisotropic profiles attainable on the Lampoly are due to the Cl2 chemistry steps. Jim can tell you what's really possible in our lab...) For reference, you should check out: http://snf.stanford.edu/Materials/NewMatProc.html --- this lists all the questions and issues you should consider when you want to bring something new into the lab (some of the questions aren't applicable to your situation, but I'm sure you can figure out which ones are...) Regards, Mary David Lieberman wrote: > Hi Mary, John, Mahnaz, and Jim; > > We'd like to ask permission to use the Lampoly to etch a thin layer of > tungsten ( ca. 100nm thick with an array of 130nm diameter holes). We > require an anisotropic etch ( vertical to near vertical sidewalls) and > believe this is the only tool at SNF with the capability to resolve this > feature. > > Since the etch chemistry creates a volatile product we believe that it's a > safe process to run in the Lam. The SF6 reacts with the tungsten to form > the volatile product WF6 which is then pumped out of the system. With the > extremely small feature sizes, and the thin film, the amount of W actually > etched is extremely small. > > We've talked to a fab that has used the TCP etcher, normally dedicated to > CMOS polysilicon, for making refractory metal gates with no problems. They > run a few dummies with SF6 afterward just to be extra safe. > > Looking at the history of the Lampoly it is clear the tool is underutilized > and if the process succeeds we would look to use the tool on a regular > basis. > > Thanks for your consideration, > > Dave Lieberman > > David Lieberman PhD. > Brion Technologies > 408-653-1527 -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at snf.stanford.edu From mdeal at stanford.edu Mon Jun 30 15:54:20 2003 From: mdeal at stanford.edu (Michael Deal) Date: Mon, 30 Jun 2003 15:54:20 -0700 Subject: Tin/Cu In-Reply-To: <3F008C3D.D24AF078@snf.stanford.edu> References: <3EFCCC05.A6A34FC1@snf.stanford.edu> Message-ID: <5.1.0.14.2.20030630155346.00af8350@mdeal.pobox.stanford.edu> Yes, tin should be okay in the metallica. -mike At 12:15 PM 6/30/2003, Jim McVittie wrote: >Mary, > >The melting point is not the issue. It is the vapor pressure is the concern. >The vapor pressure of tin is not that bad. Tin has a vapor pressure of 1E-4 >T at 997C. My cutoff for high vapor pressure materials is Indium, which has >a vapor pressure.of 1E-4 T at 773C. By the way Copper is at 1E-4 T at 1017C, >so there is not much difference between copper and tin. > > Jim > >Mary Tang wrote: > > > Hi all -- > > > > Aditi (coral login = kitu) has asked for copper and then tin to be > > deposited on her substrates (no break in vacuum between depositions). > > Since tin is a low melting temperature metal, will this be a problem for > > metalica? Are there any other concerns? > > > > Mary > > > > -- > > Mary X. Tang, Ph.D. > > National Nanofabrication Users' Network > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at snf.stanford.edu From mdeal at stanford.edu Mon Jun 30 16:08:32 2003 From: mdeal at stanford.edu (Michael Deal) Date: Mon, 30 Jun 2003 16:08:32 -0700 Subject: SPECMAT In-Reply-To: <3F00BDC0.93F28CF@snf.stanford.edu> References: Message-ID: <5.1.0.14.2.20030630160525.00af48b0@mdeal.pobox.stanford.edu> I found one reference where they etch tungsten in a Leybold Z-401s using SF6 and He and get an anisotropic value of 80%. The reference is http://dsa.dimes.tudelft.nl/usage/process_data/Z401S.html -mike At 03:46 PM 6/30/2003, Mary Tang wrote: >Hi David -- > >Just additional few questions that I think the other SpecMat members are bound >to ask you as well: > >1. Where is your tungsten being deposited? (Any processing done outside of >SNF needs to be carefully considered, because of possibly contamination >issues...) >2. Where do your wafers go after the proposed Lampoly step? (Any other clean >equipment?) >3. Do you have any literature references or experience with SF6 and the >typical profiles you get with this? (I would strongly suggest you make an >appointment to chat with Jim McVittie, our resident etch expert... I am >nowhere near an expert, but has understood the prevailing wisdom is that SF6 >gives you lots of undercutting -- the anisotropic profiles attainable on the >Lampoly are due to the Cl2 chemistry steps. Jim can tell you what's really >possible in our lab...) > >For reference, you should check out: >http://snf.stanford.edu/Materials/NewMatProc.html --- this lists all the >questions and issues you should consider when you want to bring something new >into the lab (some of the questions aren't applicable to your situation, but >I'm sure you can figure out which ones are...) > >Regards, > >Mary > >David Lieberman wrote: > > > Hi Mary, John, Mahnaz, and Jim; > > > > We'd like to ask permission to use the Lampoly to etch a thin layer of > > tungsten ( ca. 100nm thick with an array of 130nm diameter holes). We > > require an anisotropic etch ( vertical to near vertical sidewalls) and > > believe this is the only tool at SNF with the capability to resolve this > > feature. > > > > Since the etch chemistry creates a volatile product we believe that it's a > > safe process to run in the Lam. The SF6 reacts with the tungsten to form > > the volatile product WF6 which is then pumped out of the system. With the > > extremely small feature sizes, and the thin film, the amount of W actually > > etched is extremely small. > > > > We've talked to a fab that has used the TCP etcher, normally dedicated to > > CMOS polysilicon, for making refractory metal gates with no problems. They > > run a few dummies with SF6 afterward just to be extra safe. > > > > Looking at the history of the Lampoly it is clear the tool is underutilized > > and if the process succeeds we would look to use the tool on a regular > > basis. > > > > Thanks for your consideration, > > > > Dave Lieberman > > > > David Lieberman PhD. > > Brion Technologies > > 408-653-1527 > >-- >Mary X. Tang, Ph.D. >National Nanofabrication Users' Network >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at snf.stanford.edu From acilwrqubzj at mobbe.fi Mon Jun 30 16:40:53 2003 From: acilwrqubzj at mobbe.fi (Ada Bunch) Date: Tue, 1 Jul 2003 02:40:53 +0300 Subject: miffed Message-ID: <002301c33f61$84664c10$e6376855@mms> An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: insurgent.gif Type: image/gif Size: 5514 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: deficit.gif Type: image/gif Size: 5274 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: munch.gif Type: image/gif Size: 10453 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... 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