From piecoco at stanford.edu Mon Nov 3 00:06:58 2003 From: piecoco at stanford.edu (Minhwan Lee) Date: Mon, 3 Nov 2003 00:06:58 -0800 Subject: New Chemicals & Materials II Message-ID: <003a01c3a1e1$74c2c1a0$687640ab@ms> Hello, Sorry but let me ask for another material to be accepted. Actually, if this material(RbAg4I5) works fine after vacuum deposition, I don't need the previous material(KAg4I5) to be deposited. Because, my main goal with these material is solid state ionic conductivity characterization and RbAg4I5 is known to have higher ionic conductivity. Since there is no commercially available RbAg4I5, I could not get the MSDS for it. I will get a small flat lump of RbAg4I5 from RbI(Rubidium Iodide) and AgI(Silver Iodide) by heating at 450'C for an hour using a furnace in our lab. Here, let me attach the MSDS for AgI and RbI. Thank you so much, Mary, I'll talk about why I need this material in more detail when I drop by your office. Sincerely, Minhwan Lee 1.. Requester name: Minhwan Lee 2.. Phone number: 725-9936(office), 387-7305(cell) 3.. email address: piecoco at stanford.edu 4.. Requestor?s PI (Advisor) or Company: Prof. Fritz Prinz (in ME) 5.. The name of the new Chemical (give all names commonly used): Rubidium Silver Iodide, Silver Rubidium Iodide. (RbAg4I5) 6.. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 7.. Name of vendor/manufacturer that you are planning to obtain this material from: Alfa Aesar 8.. URL for vendor?s website where info on the proposed chemical can be found: http://www.alfa.com 9.. Vendor?s address and phone number: Alfa Aesar 26 Parkridge Road Ward Hill, MA 01835 USA Telephone: 1-978-521-6300 10.. What is your reason for wanting to bring this material into the lab: To get a thin film of Rubidium Silver Iodide (RbAg4I5) for impedance characterization. 11.. Make a strong case why you can not use an already approved chemical/material for this purpose: We need to have a superionic material which has high ionic conductivity in solid state at room temperature like RbAg4I5 or KAg4I5. There is no such material among already approved chemicals/materials. 12.. List all the lab equipment and wet benches that you propose to use with this chemical: Innotec (E-Gun Evaporator) 13.. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 10grams 14.. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): solid 15.. State whether the chemical needed to be mixed to use it: No. 16.. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. OK. 17.. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. OK. (Innotec is gold-contaminated.) 18.. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. Storage Group: C Hazard Class: #28 19.. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. OK 20.. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed. OK 21.. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. OK ----- Original Message ----- From: Minhwan Lee To: specmat at snf.stanford.edu Sent: Wednesday, October 29, 2003 3:03 PM Subject: New Chemicals & Materials Hello, The following is the information requested for bringing a new material. If there's any other thing I should submit, please let me know. Thank you, Sincerely, Minhwan Lee 1.. Requester name: Minhwan Lee 2.. Phone number: 725-9936(office), 387-7305(cell) 3.. email address: piecoco at stanford.edu 4.. Requestor?s PI (Advisor) or Company: Prof. Fritz Prinz (in Mechanical engineering) 5.. The name of the new Chemical (give all names commonly used): Potassium Silver Iodide, Silver Potassium Iodide. 6.. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 7.. Name of vendor/manufacturer that you are planning to obtain this material from: Alfa Aesar 8.. URL for vendor?s website where info on the proposed chemical can be found: http://www.alfa.com 9.. Vendor?s address and phone number: Alfa Aesar 26 Parkridge Road Ward Hill, MA 01835 USA Telephone: 1-978-521-6300 10.. What is your reason for wanting to bring this material into the lab: To get a thin film of potassium silver iodide (KAg4I5) for impedance characterization. 11.. Make a strong case why you can not use an already approved chemical/material for this purpose: We need to have a superionic material which has high ionic conductivity in solid state at room temperature like RbAg4I5 or KAg4I5. There is no such material among already approved chemicals/materials. 12.. List all the lab equipment and wet benches that you propose to use with this chemical: Innotec (E-Gun Evaporator) 13.. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 10grams 14.. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): solid (originally powders but no problem with making it into solid.) 15.. State whether the chemical needed to be mixed to use it: No. 16.. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. OK. 17.. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. OK. (Innotec is gold-contaminated.) 18.. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. Storage Group: C Hazard Class: #28 19.. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. OK 20.. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed. OK 21.. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. OK -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_RbI.pdf Type: application/pdf Size: 240639 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS_AgI.pdf Type: application/pdf Size: 217122 bytes Desc: not available URL: From mtang at snf.stanford.edu Mon Nov 3 09:57:28 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 03 Nov 2003 09:57:28 -0800 Subject: MSDS for PiRL III References: <183A0EDBFD6E8E46872E909796F5CFEE15080D@OZ.atsila.com> Message-ID: <3FA69708.FD20AFC1@snf.stanford.edu> Thanks! In addition, Eric -- could you list which tools will be used with this PiRL? And how much you plan to bring in, where it will be stored, etc.? (As per the questions on http://snf.stanford.edu/Materials/NewMatProc.html ) Thanks again -- Mary Mark McMaster wrote: > Mary ? > > I have sent a request to Brewer for the application info. I am > intending to use it as a release layer for SU-8 which is a capability > they claim PiRL has. > > The substrate is first coated with PiRL. > > SU-8 is then applied, exposed and developed. > > Depending upon the developer, and additional O2 plasma ash may be > required to remove the PiRL in the exposed regions. > > The PiRL is ultimately dissolved with TMAH. > > One obvious difference with PiRL vs pure polyimide materials is the > ability to dissolve it easily. Perhaps there are other polyimides > with this capability ? if so, I would be interested in learning more. > > Mark > > -----Original Message----- > From: Mary Tang [mailto:mtang at snf.stanford.edu] > Sent:Thursday, October 30, 20035:30 PM > To: Mark McMaster; ericp at snf.stanford.edu > Cc: specmat at snf.stanford.edu > Subject: Re: MSDS for PiRL III > > Hi Mark -- > > Thanks! Would you happen to have (or maybe Eric has) any application > notes from Brewer? First, there's no mention of polyimide, just that > it's a "proprietary" polymer. Second, we've got loads of polyimides > in the lab, so we (SpecMat) like to ask requestors why something that > is currently approved will not suffice. I realize that PiRL III is > totally unlike the other polyimides we use, so it would be helpful to > have some sort of literature that Brewer should be able to provide as > to the capabilities and uses for this material. Finally (this is > probably a request for Eric), we'd like to know specific details about > its use: how much will be brought in, where it will be stored, where > it will be used (questions all listed at > http://snf.stanford.edu/Materials/NewMatProc.html) > > Mary > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > > Mark McMaster wrote: > >> Mary ? >> Attached, please find the MSDS for PiRL III from Brewer Science. >> >> Thanks, >> >> Mark McMaster >> >> Cooligy, Inc. >> >> 2370 Charleston Avenue >> >> Mountain View, CA94043 >> >> (650)417-0324 (Office) >> >> (650)417-0380 (Fax) >> >> mcmaster at cooligy.com] >> >> This message is for the designated recipient(s) only. It may >> contain information which is confidential / privileged, proprietary >> or otherwise private information. If you have received it in error, >> please notify the sender immediately and delete the original. >> Please be aware that any disclosure, copying, distribution or use of >> the contents is prohibited. > > -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: From eap at gloworm.Stanford.EDU Mon Nov 3 10:10:15 2003 From: eap at gloworm.Stanford.EDU (Eric Perozziello) Date: Mon, 3 Nov 2003 10:10:15 -0800 (PST) Subject: MSDS for PiRL III In-Reply-To: <3FA69708.FD20AFC1@snf.stanford.edu> Message-ID: Hi Mary, Mark knows more than I do at this point. The only thing we've discussed so far is the coater (headway). Thanks, -Eric On Mon, 3 Nov 2003, Mary Tang wrote: > Thanks! > > In addition, Eric -- could you list which tools will be used with this > PiRL? And how much you plan to bring in, where it will be stored, > etc.? (As per the questions on > http://snf.stanford.edu/Materials/NewMatProc.html ) > > Thanks again -- > > Mary > > Mark McMaster wrote: > > > Mary ? > > > > I have sent a request to Brewer for the application info. I am > > intending to use it as a release layer for SU-8 which is a capability > > they claim PiRL has. > > > > The substrate is first coated with PiRL. > > > > SU-8 is then applied, exposed and developed. > > > > Depending upon the developer, and additional O2 plasma ash may be > > required to remove the PiRL in the exposed regions. > > > > The PiRL is ultimately dissolved with TMAH. > > > > One obvious difference with PiRL vs pure polyimide materials is the > > ability to dissolve it easily. Perhaps there are other polyimides > > with this capability ? if so, I would be interested in learning more. > > > > Mark > > > > -----Original Message----- > > From: Mary Tang [mailto:mtang at snf.stanford.edu] > > Sent:Thursday, October 30, 20035:30 PM > > To: Mark McMaster; ericp at snf.stanford.edu > > Cc: specmat at snf.stanford.edu > > Subject: Re: MSDS for PiRL III > > > > Hi Mark -- > > > > Thanks! Would you happen to have (or maybe Eric has) any application > > notes from Brewer? First, there's no mention of polyimide, just that > > it's a "proprietary" polymer. Second, we've got loads of polyimides > > in the lab, so we (SpecMat) like to ask requestors why something that > > is currently approved will not suffice. I realize that PiRL III is > > totally unlike the other polyimides we use, so it would be helpful to > > have some sort of literature that Brewer should be able to provide as > > to the capabilities and uses for this material. Finally (this is > > probably a request for Eric), we'd like to know specific details about > > its use: how much will be brought in, where it will be stored, where > > it will be used (questions all listed at > > http://snf.stanford.edu/Materials/NewMatProc.html) > > > > Mary > > > > -- > > Mary X. Tang, Ph.D. > > National Nanofabrication Users' Network > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > > > > Mark McMaster wrote: > > > >> Mary ? > >> Attached, please find the MSDS for PiRL III from Brewer Science. > >> > >> Thanks, > >> > >> Mark McMaster > >> > >> Cooligy, Inc. > >> > >> 2370 Charleston Avenue > >> > >> Mountain View, CA94043 > >> > >> (650)417-0324 (Office) > >> > >> (650)417-0380 (Fax) > >> > >> mcmaster at cooligy.com] > >> > >> This message is for the designated recipient(s) only. It may > >> contain information which is confidential / privileged, proprietary > >> or otherwise private information. If you have received it in error, > >> please notify the sender immediately and delete the original. > >> Please be aware that any disclosure, copying, distribution or use of > >> the contents is prohibited. > > > > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > From mtang at snf.stanford.edu Mon Nov 3 16:35:17 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 03 Nov 2003 16:35:17 -0800 Subject: FW: Nitride Dep on CVD Diamond References: Message-ID: <3FA6F445.8497C416@snf.stanford.edu> Hi Shabbir -- Sorry about the delay in getting back to you. Just a few questions... Where is the diamond being deposited and is it considered CMOS clean? If so, we'd like to have some sort of assurance from whereever it is this processing is being done. If not, the general rule has been to request a TXRF test on a sample wafer to confirm the cleanliness of the film. Have your wafers been processed elsewhere or with other novel films other than the diamond? Finally, where do your wafers go afterwards? (i.e., would it be possible to use PECVD nitride?) (Fellow SpecMat'ers: Anything else I missed?) Thanks, Mary "Shabbir A. Bashar, Ph.D." wrote: > Hi Mary, > > Just wondering you guys had a chance to discuss this. > > Kind regards, > > Shabbir. > > -----Original Message----- > From: Shabbir A. Bashar, Ph.D. [mailto:bashar at snf.stanford.edu] > Sent: Wednesday, October 29, 2003 1:08 PM > To: specmat at snf.stanford.edu > Subject: Nitride Dep on CVD Diamond > > Hi everyone, > > Per Mary's suggestion I'm sending out this e-mail to SpecMat. I need to > deposit a very smooth nitride film on Diamond. My initial trials with Si > wafers using the nitride furnace have yielded very encouraging results and > I'd like to follow this up by depositing nitride on Diamond. Please let me > know your views ... I'd be happy to meet with you all to answer and > questions and address any issues. > > Thanks! > > Shabbir -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From bashar at snf.stanford.edu Tue Nov 4 12:04:17 2003 From: bashar at snf.stanford.edu (Shabbir A. Bashar, Ph.D.) Date: Tue, 4 Nov 2003 12:04:17 -0800 Subject: FW: Nitride Dep on CVD Diamond In-Reply-To: <3FA6F445.8497C416@snf.stanford.edu> Message-ID: Hi Mary, Thanks for geting back to me. The diamond is grown on CMOS clean Si substrates; there are no other films or metals. We then remove the substrate here at SNF by wet etch followed by RCA1 and RCA2 cleans. Following nitride deposition they do not go into any clean or semiclean tools. Our AFM and initial tests with silicon nitride on silicon suggest that nitride deposition in the furnace yields the best results. I hope this helps. Shabbir. -----Original Message----- From: Mary Tang [mailto:mtang at snf.stanford.edu] Sent: Monday, November 03, 2003 4:35 PM To: Shabbir A. Bashar, Ph.D.; Specmat at snf.stanford.edu Subject: Re: FW: Nitride Dep on CVD Diamond Hi Shabbir -- Sorry about the delay in getting back to you. Just a few questions... Where is the diamond being deposited and is it considered CMOS clean? If so, we'd like to have some sort of assurance from whereever it is this processing is being done. If not, the general rule has been to request a TXRF test on a sample wafer to confirm the cleanliness of the film. Have your wafers been processed elsewhere or with other novel films other than the diamond? Finally, where do your wafers go afterwards? (i.e., would it be possible to use PECVD nitride?) (Fellow SpecMat'ers: Anything else I missed?) Thanks, Mary "Shabbir A. Bashar, Ph.D." wrote: > Hi Mary, > > Just wondering you guys had a chance to discuss this. > > Kind regards, > > Shabbir. > > -----Original Message----- > From: Shabbir A. Bashar, Ph.D. [mailto:bashar at snf.stanford.edu] > Sent: Wednesday, October 29, 2003 1:08 PM > To: specmat at snf.stanford.edu > Subject: Nitride Dep on CVD Diamond > > Hi everyone, > > Per Mary's suggestion I'm sending out this e-mail to SpecMat. I need to > deposit a very smooth nitride film on Diamond. My initial trials with Si > wafers using the nitride furnace have yielded very encouraging results and > I'd like to follow this up by depositing nitride on Diamond. Please let me > know your views ... I'd be happy to meet with you all to answer and > questions and address any issues. > > Thanks! > > Shabbir -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Wed Nov 5 14:40:05 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 05 Nov 2003 14:40:05 -0800 Subject: [Fwd: FW: Impurity levels in CVD diamond] Message-ID: <3FA97C44.8F0DA9D9@snf.stanford.edu> Hello SpecMat'ers -- Shabbir was asking about the status of his SpecMat request to process diamond-coated wafers in the nitride tube. I had a chat with him and learned more about what he wants. He wants a smooth, dense nitride film on top of his wafers (so PECVD nitride will not do.) I asked him if he had any information from the vendor about the quality of the CVD diamond film, and this is what he has provided. Is this adequate to approve processing of these wafers in tylannitride? Mary -------- Original Message -------- Subject: FW: Impurity levels in CVD diamond Date: Wed, 5 Nov 2003 11:58:03 -0800 From: "Shabbir A. Bashar, Ph.D." To: Hi Mary,Here's the certification for our CVD diamond vendor. I hope this will satisfy your needs.Shabbir. -----Original Message----- Sent: Wednesday, November 05, 2003 11:56 AM To: bashar at snf.stanford.edu Subject: Fwd: Impurity levels in P1 CVD diamond Note: forwarded message attached. ------------------------------------------------------------------------ Do you Yahoo!? Protect your identity with Yahoo! Mail AddressGuard -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- An embedded message was scrubbed... From: "Michael Pinneo" Subject: Impurity levels in P1 CVD diamond Date: Tue, 4 Nov 2003 13:06:22 -0800 Size: 1353 URL: From mcvittie at snf.stanford.edu Wed Nov 5 15:20:37 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 05 Nov 2003 15:20:37 -0800 Subject: [Fwd: FW: Impurity levels in CVD diamond] References: <3FA97C44.8F0DA9D9@snf.stanford.edu> Message-ID: <3FA985C5.13F241B9@snf.stanford.edu> Mary, His impurity analysis seems to be too good if one assumed standard detectivity levels. In our best Si wafers with our best cleaning procedures, we always see impurities above the detectivity level. My conclusion is that is that their measure method was not up industrial standards and is not meaningful. Holding him to the same standard as we use for everyobne else, I want to see results from Charles Evans or have him do his run just before the tube is clean. What do you say Mike? Jim Mary Tang wrote: > Hello SpecMat'ers -- > > Shabbir was asking about the status of his SpecMat request to process > diamond-coated wafers in the nitride tube. I had a chat with him and > learned more about what he wants. He wants a smooth, dense nitride > film on top of his wafers (so PECVD nitride will not do.) I asked him > if he had any information from the vendor about the quality of the CVD > diamond film, and this is what he has provided. Is this adequate to > approve processing of these wafers in tylannitride? > > Mary > > -------- Original Message -------- > Subject: FW: Impurity levels in CVD diamond Date: Wed, 5 Nov 2003 11:58:03 -0800 From: "Shabbir A. Bashar, Ph.D." To: > > Hi Mary,Here's the certification for our CVD diamond vendor. I hope > this will satisfy your needs.Shabbir. > -----Original Message----- > Sent: Wednesday, November 05, 2003 11:56 AM > To: bashar at snf.stanford.edu > Subject: Fwd: Impurity levels in P1 CVD diamond > > Note: forwarded message attached. > ----------------------------------------------------------------------- > Do you Yahoo!? > Protect your identity with Yahoo! Mail AddressGuard > ---------------------------------------------------------------- > > Subject: Impurity levels in P1 CVD diamond > Date: Tue, 4 Nov 2003 13:06:22 -0800 > From: "Michael Pinneo" > To: > CC: "John Herb" > > To whom it may concern: > > These comments concern non-carbon elemental impurity levels in CVD > diamond materials made using plasma CVD in P1 Diamond deposition > systems. > > The materials exposed to the deposition process are aluminum (chamber > walls), molybdenum (substrate holder), and fused silica (observation > windows). > > X-ray fluorescence tests done at FermiLab in 2001 on samples of our CVD > diamond showed no metal or oxygen impurities above the detection limit > of one part per million. Silicon was found in the samples at > concentrations less than 10ppm. > > Based on these results, P1's CVD diamond films meet or exceed > requirements for designation as CMOS Grade or Electronic Grade > materials. > > Sincerely, > > > Michael Pinneo, Ph.D. > CTO > > P1 Diamond, Inc. > 3571 Leonard Court > Santa Clara, CA 95054 > > 408-567-9684 x103 > 408-567-9685 fax > > -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mdeal at stanford.edu Wed Nov 5 16:21:15 2003 From: mdeal at stanford.edu (Michael Deal) Date: Wed, 05 Nov 2003 16:21:15 -0800 Subject: [Fwd: FW: Impurity levels in CVD diamond] In-Reply-To: <3FA985C5.13F241B9@snf.stanford.edu> References: <3FA97C44.8F0DA9D9@snf.stanford.edu> Message-ID: <5.2.1.1.2.20031105161830.022445e8@mdeal.pobox.stanford.edu> I agree with Jim. I don't believe "no metal above the detection limit of 1ppm." Maybe some metals, but not all. -mike At 03:20 PM 11/5/2003, Jim McVittie wrote: >Mary, > >His impurity analysis seems to be too good if one assumed standard >detectivity levels. In our best Si wafers with our best cleaning >procedures, we always see impurities above the detectivity level. >My conclusion is that is that their measure method was not up industrial >standards and is not meaningful. Holding him to the same standard as we >use for everyobne else, I want to see results from Charles Evans or have >him do his run just before the tube is clean. What do you say Mike? > > Jim > > > >Mary Tang wrote: > > > Hello SpecMat'ers -- > > > > Shabbir was asking about the status of his SpecMat request to process > > diamond-coated wafers in the nitride tube. I had a chat with him and > > learned more about what he wants. He wants a smooth, dense nitride > > film on top of his wafers (so PECVD nitride will not do.) I asked him > > if he had any information from the vendor about the quality of the CVD > > diamond film, and this is what he has provided. Is this adequate to > > approve processing of these wafers in tylannitride? > > > > Mary > > > > -------- Original Message -------- > > Subject: FW: Impurity levels in CVD diamond > Date: Wed, 5 Nov 2003 11:58:03 -0800 > From: "Shabbir A. Bashar, Ph.D." > To: > > > > Hi Mary,Here's the certification for our CVD diamond vendor. I hope > > this will satisfy your needs.Shabbir. > > -----Original Message----- > > Sent: Wednesday, November 05, 2003 11:56 AM > > To: bashar at snf.stanford.edu > > Subject: Fwd: Impurity levels in P1 CVD diamond > > > > Note: forwarded message attached. > > ----------------------------------------------------------------------- > > Do you Yahoo!? > > Protect your identity with Yahoo! Mail AddressGuard > > ---------------------------------------------------------------- > > > > Subject: Impurity levels in P1 CVD diamond > > Date: Tue, 4 Nov 2003 13:06:22 -0800 > > From: "Michael Pinneo" > > To: > > CC: "John Herb" > > > > To whom it may concern: > > > > These comments concern non-carbon elemental impurity levels in CVD > > diamond materials made using plasma CVD in P1 Diamond deposition > > systems. > > > > The materials exposed to the deposition process are aluminum (chamber > > walls), molybdenum (substrate holder), and fused silica (observation > > windows). > > > > X-ray fluorescence tests done at FermiLab in 2001 on samples of our CVD > > diamond showed no metal or oxygen impurities above the detection limit > > of one part per million. Silicon was found in the samples at > > concentrations less than 10ppm. > > > > Based on these results, P1's CVD diamond films meet or exceed > > requirements for designation as CMOS Grade or Electronic Grade > > materials. > > > > Sincerely, > > > > > > Michael Pinneo, Ph.D. > > CTO > > > > P1 Diamond, Inc. > > 3571 Leonard Court > > Santa Clara, CA 95054 > > > > 408-567-9684 x103 > > 408-567-9685 fax > > > > From mtang at snf.stanford.edu Wed Nov 5 16:40:14 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 05 Nov 2003 16:40:14 -0800 Subject: [Fwd: FW: Impurity levels in CVD diamond] References: <3FA97C44.8F0DA9D9@snf.stanford.edu> <5.2.1.1.2.20031105161830.022445e8@mdeal.pobox.stanford.edu> Message-ID: <3FA9986E.4D236A42@snf.stanford.edu> I believe it may mean no Mo or Al detected, since these were part of the chamber, rather than no other metals at all. So, would a TXRF analysis from Charles Evans be recommended and satisfactory? Mary Michael Deal wrote: > I agree with Jim. I don't believe "no metal above the detection limit of > 1ppm." Maybe some metals, but not all. -mike > > At 03:20 PM 11/5/2003, Jim McVittie wrote: > >Mary, > > > >His impurity analysis seems to be too good if one assumed standard > >detectivity levels. In our best Si wafers with our best cleaning > >procedures, we always see impurities above the detectivity level. > >My conclusion is that is that their measure method was not up industrial > >standards and is not meaningful. Holding him to the same standard as we > >use for everyobne else, I want to see results from Charles Evans or have > >him do his run just before the tube is clean. What do you say Mike? > > > > Jim > > > > > > > >Mary Tang wrote: > > > > > Hello SpecMat'ers -- > > > > > > Shabbir was asking about the status of his SpecMat request to process > > > diamond-coated wafers in the nitride tube. I had a chat with him and > > > learned more about what he wants. He wants a smooth, dense nitride > > > film on top of his wafers (so PECVD nitride will not do.) I asked him > > > if he had any information from the vendor about the quality of the CVD > > > diamond film, and this is what he has provided. Is this adequate to > > > approve processing of these wafers in tylannitride? > > > > > > Mary > > > > > > -------- Original Message -------- > > > Subject: FW: Impurity levels in CVD diamond > > Date: Wed, 5 Nov 2003 11:58:03 -0800 > > From: "Shabbir A. Bashar, Ph.D." > > To: > > > > > > Hi Mary,Here's the certification for our CVD diamond vendor. I hope > > > this will satisfy your needs.Shabbir. > > > -----Original Message----- > > > Sent: Wednesday, November 05, 2003 11:56 AM > > > To: bashar at snf.stanford.edu > > > Subject: Fwd: Impurity levels in P1 CVD diamond > > > > > > Note: forwarded message attached. > > > ----------------------------------------------------------------------- > > > Do you Yahoo!? > > > Protect your identity with Yahoo! Mail AddressGuard > > > ---------------------------------------------------------------- > > > > > > Subject: Impurity levels in P1 CVD diamond > > > Date: Tue, 4 Nov 2003 13:06:22 -0800 > > > From: "Michael Pinneo" > > > To: > > > CC: "John Herb" > > > > > > To whom it may concern: > > > > > > These comments concern non-carbon elemental impurity levels in CVD > > > diamond materials made using plasma CVD in P1 Diamond deposition > > > systems. > > > > > > The materials exposed to the deposition process are aluminum (chamber > > > walls), molybdenum (substrate holder), and fused silica (observation > > > windows). > > > > > > X-ray fluorescence tests done at FermiLab in 2001 on samples of our CVD > > > diamond showed no metal or oxygen impurities above the detection limit > > > of one part per million. Silicon was found in the samples at > > > concentrations less than 10ppm. > > > > > > Based on these results, P1's CVD diamond films meet or exceed > > > requirements for designation as CMOS Grade or Electronic Grade > > > materials. > > > > > > Sincerely, > > > > > > > > > Michael Pinneo, Ph.D. > > > CTO > > > > > > P1 Diamond, Inc. > > > 3571 Leonard Court > > > Santa Clara, CA 95054 > > > > > > 408-567-9684 x103 > > > 408-567-9685 fax > > > > > > -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mdeal at stanford.edu Wed Nov 5 17:12:24 2003 From: mdeal at stanford.edu (Michael Deal) Date: Wed, 05 Nov 2003 17:12:24 -0800 Subject: [Fwd: FW: Impurity levels in CVD diamond] In-Reply-To: <3FA9986E.4D236A42@snf.stanford.edu> References: <3FA97C44.8F0DA9D9@snf.stanford.edu> <5.2.1.1.2.20031105161830.022445e8@mdeal.pobox.stanford.edu> Message-ID: <5.2.1.1.2.20031105170259.02272d40@mdeal.pobox.stanford.edu> But X-ray flourescence can detect a range of metals in one simple survey (and contamination analyses are usually done to look at many metals, not just a couple that make up the chamber ). So I think a TXRF analysis from evans or somewhere else should be done. -mike At 04:40 PM 11/5/2003, Mary Tang wrote: >I believe it may mean no Mo or Al detected, since these were part of the >chamber, rather than no other metals at all. So, would a TXRF analysis from >Charles Evans be recommended and satisfactory? > >Mary > >Michael Deal wrote: > > > I agree with Jim. I don't believe "no metal above the detection limit of > > 1ppm." Maybe some metals, but not all. -mike > > > > At 03:20 PM 11/5/2003, Jim McVittie wrote: > > >Mary, > > > > > >His impurity analysis seems to be too good if one assumed standard > > >detectivity levels. In our best Si wafers with our best cleaning > > >procedures, we always see impurities above the detectivity level. > > >My conclusion is that is that their measure method was not up industrial > > >standards and is not meaningful. Holding him to the same standard as we > > >use for everyobne else, I want to see results from Charles Evans or have > > >him do his run just before the tube is clean. What do you say Mike? > > > > > > Jim > > > > > > > > > > > >Mary Tang wrote: > > > > > > > Hello SpecMat'ers -- > > > > > > > > Shabbir was asking about the status of his SpecMat request to process > > > > diamond-coated wafers in the nitride tube. I had a chat with him and > > > > learned more about what he wants. He wants a smooth, dense nitride > > > > film on top of his wafers (so PECVD nitride will not do.) I asked him > > > > if he had any information from the vendor about the quality of the CVD > > > > diamond film, and this is what he has provided. Is this adequate to > > > > approve processing of these wafers in tylannitride? > > > > > > > > Mary > > > > > > > > -------- Original Message -------- > > > > Subject: FW: Impurity levels in CVD diamond > > > Date: Wed, 5 Nov 2003 11:58:03 -0800 > > > From: "Shabbir A. Bashar, Ph.D." > > > To: > > > > > > > > Hi Mary,Here's the certification for our CVD diamond vendor. I hope > > > > this will satisfy your needs.Shabbir. > > > > -----Original Message----- > > > > Sent: Wednesday, November 05, 2003 11:56 AM > > > > To: bashar at snf.stanford.edu > > > > Subject: Fwd: Impurity levels in P1 CVD diamond > > > > > > > > Note: forwarded message attached. > > > > ----------------------------------------------------------------------- > > > > Do you Yahoo!? > > > > Protect your identity with Yahoo! Mail AddressGuard > > > > ---------------------------------------------------------------- > > > > > > > > Subject: Impurity levels in P1 CVD diamond > > > > Date: Tue, 4 Nov 2003 13:06:22 -0800 > > > > From: "Michael Pinneo" > > > > To: > > > > CC: "John Herb" > > > > > > > > To whom it may concern: > > > > > > > > These comments concern non-carbon elemental impurity levels in CVD > > > > diamond materials made using plasma CVD in P1 Diamond deposition > > > > systems. > > > > > > > > The materials exposed to the deposition process are aluminum (chamber > > > > walls), molybdenum (substrate holder), and fused silica (observation > > > > windows). > > > > > > > > X-ray fluorescence tests done at FermiLab in 2001 on samples of our CVD > > > > diamond showed no metal or oxygen impurities above the detection limit > > > > of one part per million. Silicon was found in the samples at > > > > concentrations less than 10ppm. > > > > > > > > Based on these results, P1's CVD diamond films meet or exceed > > > > requirements for designation as CMOS Grade or Electronic Grade > > > > materials. > > > > > > > > Sincerely, > > > > > > > > > > > > Michael Pinneo, Ph.D. > > > > CTO > > > > > > > > P1 Diamond, Inc. > > > > 3571 Leonard Court > > > > Santa Clara, CA 95054 > > > > > > > > 408-567-9684 x103 > > > > 408-567-9685 fax > > > > > > > > > >-- >Mary X. Tang, Ph.D. >National Nanofabrication Users' Network >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu From mtang at snf.stanford.edu Fri Nov 7 10:01:50 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 07 Nov 2003 10:01:50 -0800 Subject: [Fwd: Shabbir Bashar] Message-ID: <3FABDE0E.1AA1BEF3@snf.stanford.edu> Hello SpecMat'ers -- I'm just summarizing requests for Oct., and I don't think we ever officially resolved this one... So, what's the verdict? Mary -------- Original Message -------- Subject: Shabbir Bashar Date: Mon, 27 Oct 2003 14:50:11 -0800 From: Mary Tang Organization: Stanford University To: Jim McVittie CC: specmat at snf.stanford.edu Hi Jim -- I just spoke with Shabbir about his Ge substrate processing request in epi. His Ge is straight from the vendor and he proposes that the first step (after cleaning) be the Ge epi. The second part (which has not been developed, much less approved through SpecMat) is a process in which Si is bonded to the Ge substrate, then smart cut off, leaving a Ge layer on Si. He says it's all "clean" processing even at this point. Then, he would like to put epi Ge on this substrate. I know nothing about the smart cut process for Ge, but it would seem to me that the first part of his process might be acceptable in epi, provided the clean is carefully defined (where it is to be done and what kind of decontamination precautions are needed.) What do you think and how does this sound to you? Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Fri Nov 7 10:03:37 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 07 Nov 2003 10:03:37 -0800 Subject: Polyimide in stsetch Message-ID: <3FABDE79.A96E6032@snf.stanford.edu> Hi SpecMat'ers -- Another request that has not yet been resolved (as far as I know) is Randy True's request to do polyimide etching in the stsetcher using the clean recipe. Jim -- you had some concerns about this -- did they get addressed? Thanks, Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From hsanda at stanford.edu Fri Nov 7 15:52:34 2003 From: hsanda at stanford.edu (Hiroyuki Sanda) Date: Fri, 7 Nov 2003 15:52:34 -0800 Subject: Potassium Dichromate(k2Cr2O7) Message-ID: <1068249154.3fac3042c1133@webmail.stanford.edu> Hi, I would like to register a new chemical. The attached file includes all information. Thanks, Hiroyuki Sanda -------------- next part -------------- A non-text attachment was scrubbed... Name: safty committie (Potassium Dichromate).doc Type: application/msword Size: 26624 bytes Desc: not available URL: From mtang at snf.stanford.edu Tue Nov 11 08:50:44 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 11 Nov 2003 08:50:44 -0800 Subject: Potassium Dichromate(k2Cr2O7) References: <1068249154.3fac3042c1133@webmail.stanford.edu> Message-ID: <3FB11364.92A91AC0@snf.stanford.edu> Hi SpecMat'ers -- A couple of questions/comments -- 1. The volumes indicated seem awfully high for wbgeneral or wbgaas -- (2 L with 49% HF?) Could we ask him to mix up smaller volumes appropriate for the containers normally used there? 2. Where will the mixing be done? If he does this in another lab (hopefully, one equipped to handle chemistry) then I would suppose that the rules of that lab will govern. But if he mixes in our lab (the wafersaw room is a favorite) then we should have a brief chat with him about how to do this properly (how/where to weigh, transport, etc.) Otherwise, it looks good to me -- any comments? Mary Hiroyuki Sanda wrote: > Hi, > > I would like to register a new chemical. > The attached file includes all information. > > Thanks, > Hiroyuki Sanda > > ------------------------------------------------------------------------ > Name: safty committie (Potassium Dichromate).doc > safty committie (Potassium Dichromate).doc Type: WINWORD File (application/msword) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Tue Nov 11 08:52:07 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 11 Nov 2003 08:52:07 -0800 Subject: Rollup for October Message-ID: <3FB113B7.D63B26BF@snf.stanford.edu> I forgot about this... Please let me know if you have any comments/changes you'd like to add before I post this... Thanks, Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMatOct.doc Type: application/msword Size: 42496 bytes Desc: not available URL: From mcvittie at snf.stanford.edu Fri Nov 14 13:45:37 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Fri, 14 Nov 2003 13:45:37 -0800 Subject: Potassium Dichromate(k2Cr2O7) References: <1068249154.3fac3042c1133@webmail.stanford.edu> <3FB11364.92A91AC0@snf.stanford.edu> Message-ID: <3FB54D01.844827BA@snf.stanford.edu> Mary, I agree that he does not need to mix up 2 L but it is safer to mix up a large batch if he is going to use this etch a number of times. I expect he does not need to use more than 50 cc for each time it is used. 500 cc might be a better starting point. I told him that he would have to use the chem-mix/wafer saw lab. If it is ok with everyone, I will tell him to go ahead. Jim Mary Tang wrote: > Hi SpecMat'ers -- > > A couple of questions/comments -- > > 1. The volumes indicated seem awfully high for wbgeneral or wbgaas -- (2 L with 49% HF?) Could we ask him > to mix up smaller volumes appropriate for the containers normally used there? > > 2. Where will the mixing be done? If he does this in another lab (hopefully, one equipped to handle > chemistry) then I would suppose that the rules of that lab will govern. But if he mixes in our lab (the > wafersaw room is a favorite) then we should have a brief chat with him about how to do this properly > (how/where to weigh, transport, etc.) > > Otherwise, it looks good to me -- any comments? > > Mary > > Hiroyuki Sanda wrote: > > > Hi, > > > > I would like to register a new chemical. > > The attached file includes all information. > > > > Thanks, > > Hiroyuki Sanda > > > > ------------------------------------------------------------------------ > > Name: safty committie (Potassium Dichromate).doc > > safty committie (Potassium Dichromate).doc Type: WINWORD File (application/msword) > > Encoding: base64 > > Download Status: Not downloaded with message > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From emyers at genorx.com Fri Nov 14 15:23:12 2003 From: emyers at genorx.com (Edward Myers) Date: Fri, 14 Nov 2003 15:23:12 -0800 Subject: UV-NIL New Process Request Message-ID: <005801c3ab06$46a926f0$060810ac@genorx.int> New Materials Request Board, GenoRx has committed to a program on the evaluation NanoImprint Lithography. UV-NIL has the potential to be very critical to our company and has become a high priority. It is our objective to have an evaluation UV-NIL hard mask fabricated and ready for imprinting by SNF's Dec. 19th Holiday shutdown. This compresses a number of development projects, especially in the material selection and dry etch area. This request outlines the proposed process flow, material choices and tool selection. The target date for design completion and mask availability is Dec. 5th. By this time initial studies on the Cr hard mask and quartz etch needs to be completed. Equipment training is on-going with etch development samples available by Friday, Nov. 21st. I hope you can provide a quick response and guidance as this program rapidly gathers momentum. Regards, Ed Myers GenoRx, Inc. 3916 Trust Way Hayward, CA 94545 phone: (510) 732-9100 ext. 117 email: emyers at genorx.com -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: UV-NIL Process Flow.xls Type: application/vnd.ms-excel Size: 20992 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Cr Dry Etch Just.doc Type: application/msword Size: 315392 bytes Desc: not available URL: From mtang at snf.stanford.edu Mon Nov 17 06:57:14 2003 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 17 Nov 2003 06:57:14 -0800 Subject: Potassium Dichromate(k2Cr2O7) References: <1068249154.3fac3042c1133@webmail.stanford.edu> <3FB11364.92A91AC0@snf.stanford.edu> <3FB54D01.844827BA@snf.stanford.edu> Message-ID: <3FB8E1CA.216695DF@snf.stanford.edu> Hi Jim -- Sounds fine to me -- but if you could, please have him talk with a staff member (me, you, Nancy, Maurice, preferably) about the logistics of using the wafersaw/chem room... It's really Tony/David/Maintenance space, so we'd like to make sure that he understands this and to make sure to use the appropriate safety gear/labware/sinks (and where to find it all), that he should check with Tony/David/Mike D. who all share this space, and to cleanup completely after himself (or those guys will give us a hard time about letting labmembers use their space!) Thanks, Mary Jim McVittie wrote: > Mary, > > I agree that he does not need to mix up 2 L but it is safer to mix up a large batch if he is going to use this > etch a number of times. I expect he does not need to use more than 50 cc for each time it is used. 500 cc might > be a better starting point. > > I told him that he would have to use the chem-mix/wafer saw lab. > > If it is ok with everyone, I will tell him to go ahead. Jim > > Mary Tang wrote: > > > Hi SpecMat'ers -- > > > > A couple of questions/comments -- > > > > 1. The volumes indicated seem awfully high for wbgeneral or wbgaas -- (2 L with 49% HF?) Could we ask him > > to mix up smaller volumes appropriate for the containers normally used there? > > > > 2. Where will the mixing be done? If he does this in another lab (hopefully, one equipped to handle > > chemistry) then I would suppose that the rules of that lab will govern. But if he mixes in our lab (the > > wafersaw room is a favorite) then we should have a brief chat with him about how to do this properly > > (how/where to weigh, transport, etc.) > > > > Otherwise, it looks good to me -- any comments? > > > > Mary > > > > Hiroyuki Sanda wrote: > > > > > Hi, > > > > > > I would like to register a new chemical. > > > The attached file includes all information. > > > > > > Thanks, > > > Hiroyuki Sanda > > > > > > ------------------------------------------------------------------------ > > > Name: safty committie (Potassium Dichromate).doc > > > safty committie (Potassium Dichromate).doc Type: WINWORD File (application/msword) > > > Encoding: base64 > > > Download Status: Not downloaded with message > > > > -- > > Mary X. Tang, Ph.D. > > National Nanofabrication Users' Network > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mcvittie at snf.stanford.edu Tue Nov 18 10:06:57 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Tue, 18 Nov 2003 10:06:57 -0800 Subject: Potassium Dichromate(k2Cr2O7) References: <1068249154.3fac3042c1133@webmail.stanford.edu> <3FB11364.92A91AC0@snf.stanford.edu> <3FB54D01.844827BA@snf.stanford.edu> <3FB8E1CA.216695DF@snf.stanford.edu> Message-ID: <3FBA5FC1.7CF2EAA0@snf.stanford.edu> Mary, I helped the student mix the Potassium Dichromate with 1 liter of water using the Helms lab. He now needs to mix this solution with 49% HF before he does his defect etch. Note that the solution has a short shelf life so the HF has to added before each use. I will have him tag the Potassium Dichromate bottle and the waste bottle, and talk to Uli. Jim Mary Tang wrote: > Hi Jim -- > > Sounds fine to me -- but if you could, please have him talk with a staff member (me, you, Nancy, Maurice, > preferably) about the logistics of using the wafersaw/chem room... It's really Tony/David/Maintenance space, so > we'd like to make sure that he understands this and to make sure to use the appropriate safety gear/labware/sinks > (and where to find it all), that he should check with Tony/David/Mike D. who all share this space, and to cleanup > completely after himself (or those guys will give us a hard time about letting labmembers use their space!) > > Thanks, > > Mary > > Jim McVittie wrote: > > > Mary, > > > > I agree that he does not need to mix up 2 L but it is safer to mix up a large batch if he is going to use this > > etch a number of times. I expect he does not need to use more than 50 cc for each time it is used. 500 cc might > > be a better starting point. > > > > I told him that he would have to use the chem-mix/wafer saw lab. > > > > If it is ok with everyone, I will tell him to go ahead. Jim > > > > Mary Tang wrote: > > > > > Hi SpecMat'ers -- > > > > > > A couple of questions/comments -- > > > > > > 1. The volumes indicated seem awfully high for wbgeneral or wbgaas -- (2 L with 49% HF?) Could we ask him > > > to mix up smaller volumes appropriate for the containers normally used there? > > > > > > 2. Where will the mixing be done? If he does this in another lab (hopefully, one equipped to handle > > > chemistry) then I would suppose that the rules of that lab will govern. But if he mixes in our lab (the > > > wafersaw room is a favorite) then we should have a brief chat with him about how to do this properly > > > (how/where to weigh, transport, etc.) > > > > > > Otherwise, it looks good to me -- any comments? > > > > > > Mary > > > > > > Hiroyuki Sanda wrote: > > > > > > > Hi, > > > > > > > > I would like to register a new chemical. > > > > The attached file includes all information. > > > > > > > > Thanks, > > > > Hiroyuki Sanda > > > > > > > > ------------------------------------------------------------------------ > > > > Name: safty committie (Potassium Dichromate).doc > > > > safty committie (Potassium Dichromate).doc Type: WINWORD File (application/msword) > > > > Encoding: base64 > > > > Download Status: Not downloaded with message > > > > > > -- > > > Mary X. Tang, Ph.D. > > > National Nanofabrication Users' Network > > > Stanford Nanofabrication Facility > > > CIS Room 136, Mail Code 4070 > > > Stanford, CA 94305 > > > (650)723-9980 > > > mtang at stanford.edu > > > http://snf.stanford.edu > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mcvittie at snf.stanford.edu Wed Nov 19 11:15:22 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 19 Nov 2003 11:15:22 -0800 Subject: UV-NIL New Process Request References: <005801c3ab06$46a926f0$060810ac@genorx.int> Message-ID: <3FBBC14A.DAEE1B7A@snf.stanford.edu> Ed, I just wanted to write down what we talked about yesterday. You are going to get round 4" quartz wafers with a Cr pattern and do etch tests in the Amat etcher (8100) starting with a the standard NF3 etch process. I have some notes on the NF3 process, which I can give you, but they are on Si etch issues where the etch profile is strongly dependent on the rf power. Jim Edward Myers wrote: > New Materials Request Board, GenoRx has committed to a program on the > evaluation NanoImprint Lithography. UV-NIL has the potential to be > very critical to our company and has become a high priority. It is > our objective to have an evaluation UV-NIL hard mask fabricated and > ready for imprinting by SNF's Dec. 19th Holiday shutdown. This > compresses a number of development projects, especially in the > material selection and dry etch area. This request outlines the > proposed process flow, material choices and tool selection. The > target date for design completion and mask availability is Dec. 5th. > By this time initial studies on the Cr hard mask and quartz etch needs > to be completed. Equipment training is on-going with etch development > samples available by Friday, Nov. 21st. I hope you can provide a quick > response and guidance as this program rapidly gathers > momentum. Regards, Ed MyersGenoRx, Inc.3916 Trust WayHayward, CA > 94545phone: (510) 732-9100 ext. 117email: emyers at genorx.com -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From emyers at genorx.com Wed Nov 19 15:20:23 2003 From: emyers at genorx.com (Edward Myers) Date: Wed, 19 Nov 2003 15:20:23 -0800 Subject: UV-NIL New Process Request In-Reply-To: <3FBBC14A.DAEE1B7A@snf.stanford.edu> Message-ID: Jim, Yes, I have 4 inch round's I'm working with. They are waiting for deposition at this time. I have time on the AMT for Thursday afternoon to do my first etch tests. I will have four wafers, so I would also like to test the via etch that you also mentioned. I will try and find you to get your insight on the NF3 process. Regards, Ed On Wed, 19 Nov 2003 11:15:22 -0800 Jim McVittie wrote: >Ed, > >I just wanted to write down what we talked about yesterday. You are >going to get round 4" quartz wafers with a Cr pattern and do etch >tests >in the Amat etcher (8100) starting with a the standard NF3 etch >process. >I have some notes on the NF3 process, which I can give you, but they >are >on Si etch issues where the etch profile is strongly dependent on the >rf >power. > > Jim > >Edward Myers wrote: > >> New Materials Request Board, GenoRx has committed to a program on >>the >> evaluation NanoImprint Lithography. UV-NIL has the potential to be >> very critical to our company and has become a high priority. It is >> our objective to have an evaluation UV-NIL hard mask fabricated and >> ready for imprinting by SNF's Dec. 19th Holiday shutdown. This >> compresses a number of development projects, especially in the >> material selection and dry etch area. This request outlines the >> proposed process flow, material choices and tool selection. The >> target date for design completion and mask availability is Dec. 5th. >> By this time initial studies on the Cr hard mask and quartz etch >>needs >> to be completed. Equipment training is on-going with etch >>development >> samples available by Friday, Nov. 21st. I hope you can provide a >>quick >> response and guidance as this program rapidly gathers >> momentum. Regards, Ed MyersGenoRx, Inc.3916 Trust WayHayward, CA >> 94545phone: (510) 732-9100 ext. 117email: emyers at genorx.com From alhaji_m1 at myway.com Thu Nov 20 19:50:10 2003 From: alhaji_m1 at myway.com (ALHAJI MOHAMMED ABACHA) Date: Fri, 21 Nov 2003 03:50:10 +0000 Subject: PROPOSA Message-ID: ALHAJI MOHAMMED ABACHA 2/8 GIDADO DRIVE,GRA, KANO - NIGERIA. PLEASE AS YOU READ KINDLY OPEN THE WEBSITE FOR THISDAY NEWSPAPER OF TUESDAY,SEPTEMBER 24TH.,2002. VOL 8,NO.2711 FRONT PAGE. AT (WWW.THISDAYONLINE.COM).PLEASE EXCUSE MY INTRUSION INTO YOUR PRIVATE LIFE AS I WRITE YOU THIS LETTER IN GOOD FAITH AND TO THE GLORY OF ALMIGHTY GOD WHO THUS BROUGHT ME OUT CLEAN AFTER ALL THE ALLEGATIONS LEVELLED AGAINST ME AFTER THE DEATH OF MY FATHER GENERAL SANI ABACHA (FORMER NIGERIAN MILITARY HEAD OF STATES).MY RELEASE FROM PRISON WAS NECESSITATED BY THE EFFORTS OF THE SENATE PRESIDENT CHIEF ANYIM PIUS ANYIM AND THE SPEAKER OF THE LOWER HOUSE ALHAJI GHALI NA'ABBA. SINCE MY FATHER'S DEATH AND MY DETENTION FOR CLOSE TO THREE YEARS, MY FAMILY HAS BEEN LOOSING A LOT OF MONEY DUE TO VINDICTIVE GOVERNMENT OFFICIALS WHO ARE BENT ON DEALING WITH OUR FAMILY. AFTER MY RELEASE THE FEDERAL GOVERNMENT OF NIGERIA HAS MADE ME SIGN SOME DOCUMENTS THAT WILL ENABLE THEM EXTRACT THE SUM OF ONE BILLION FIVE HUNDRED MILLION US DOLLARS FROM MY FATHER?S BANK ACCOUNTS IN LONDON,SWITZERLAND,LUXEMBIURG,LIECHTENSTEIN AND JESEY ETC. MY FAMILY AND I ARE LOOKING FOR A TRUSTWORTHY FOREIGN PARTNER WHO CAN ASSIST US BY TAKING POSESSION OF THE TOTAL SUM OF US$25,000,000.00 ( TWENTY FIVE MILLION UNITED STATES DOLLARS ), WHICH THE GOVERNMENT DID NOT KNOW ABOUT. BECAUSE IN THEIR THINKING THEY WANT TO LEAVE ONLY ONE HUNDRED MILLION TO MY FAMILY THIS MONEY IS PRESENTLY IN THE POSSESSION OF A SECURITY COMPANY ABROAD. THIS MONEY WAS OF COURSE, ACQUIRED BY MY LATE FATHER AND IS NOW KEPT SECRETLY BY THE FAMILY. THE SWISS GOVERNMENT HAS ALREADY FROZEN ALL OTHER ACCOUNTS OF MY FAMILY IN SWITZERLAND, AND SOME OTHER COUNTRIES ALSO TRIED DOING LIKE WISE. THIS BID BY SOME GOVERNMENT OFFICIALS TO DEAL WITH THIS FAMILY HAS MADE IT NECESSARY THAT I SEEK YOUR ASSISITANCE IN RECEIVING THIS MONEY AND IN INVESTING IT ON BEHALF OF MY FAMILY. THIS MUST BE A JOINT VENTURE TRANSACTION AND WE MUST ALL WORK TOGETHER. SINCE THIS MONEY IS STILL CASH,EXTRA SECURITY MEASURES HAVE BEEN TAKEN TO PROTECT IT FROM THEFT OR SEIZURE. I HAVE PERSONALLY WORKED OUT ALL MODALITIES FOR THE PEACEFUL CONCLUSION OF THIS TRANSACTION WITH THE SECUITY COMPANY. HOWEVER, BASED ON THE GROUNDS THAT YOU ARE WILLING TO WORK WITH ME AND ALSO ALL CONTENTIOUS ISSUES DISCUSSED BEFORE THE COMMENCEMENT OF THIS TRANSACTION. YOU MAY ALSO DISCUSS YOUR PERCENTAGE BEFORE WE START TO WORK.AS SOON AS I HEAR FROM YOU, I WILL GIVE YOU ALL NECESSARY DETAILS AS TO HOW WE INTEND TO CARRY OUT THE WHOLE TRANSACTION. PLEASE, DO NOT ENTERTAIN ANY FEARS, AS ALL NECESSARY MODALITIES ARE IN PLACE, AND I ASSURE YOU OF ALL SUCCESS AND SAFETY IN THIS TRANSACTION.PLEASE, THIS TRANSACTION REQUIRES ABSOLUTE CONFIDENTIALITY AND YOU WOULD BE EXPECTED TO TREAT IT AS SUCH. IF YOU ARE INTERESTED IN ASSISTING ME PLEASE SEND ME YOUR CONCENT AND TELEPHONE NUMBER. PLEASE, YOU MAY ALSO IGNORE THIS LETTER AND RESPECT MY TRUST IN YOU BY NOT EXPOSING THIS TRANSACTION, SHOULD YOU NOT BE INTERESTED. I LOOK FORWARD TO WORKING WITH YOU. THANK YOU ALHAJI MOHAMMED ABACHA From mcvittie at snf.stanford.edu Wed Nov 26 13:05:30 2003 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 26 Nov 2003 13:05:30 -0800 Subject: Cr Etching in Metal Chamber on P5000 References: Message-ID: <3FC5159A.C43DC9B6@snf.stanford.edu> > Ed, The guys at AMAT do not see any problems with adding O2 to the Metal etch chamber on our P5000. Their only caution was to make sure we season the chamber before going back to the Al etch processing. For our low use they did not think that particles from oxidation of the AlCl3 on the chamber walls would be a problem. I will see about having a jumper and valve added to add O2 to the metal chamber. Jim -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From bdhardin at stanford.edu Sun Nov 30 16:43:07 2003 From: bdhardin at stanford.edu (bdhardin at stanford.edu) Date: Sun, 30 Nov 2003 17:43:07 -0700 Subject: New Code of Conduct Message-ID: <200311302243.hAUMh6QE027377@ms-smtp-01.nyroc.rr.com> ============================================================ Your work won't get done by itself, Unless you want it to... Check out the best in Automation Software for Windows at Cypress Technologies http://www.cypressnet.com -------------- next part -------------- An HTML attachment was scrubbed... URL: