[Fwd: FW: Impurity levels in CVD diamond]

Mary Tang mtang at snf.stanford.edu
Wed Nov 5 16:40:14 PST 2003


I believe it may mean no Mo or Al detected, since these were part of the
chamber, rather than no other metals at all.  So, would a TXRF analysis from
Charles Evans be recommended and satisfactory?

Mary

Michael Deal wrote:

> I agree with Jim.  I don't believe "no metal above the detection limit of
> 1ppm."   Maybe some metals, but not all.      -mike
>
> At 03:20 PM 11/5/2003, Jim McVittie wrote:
> >Mary,
> >
> >His impurity analysis seems to be too good if one assumed standard
> >detectivity levels. In our best Si wafers with our best cleaning
> >procedures, we always see impurities above the detectivity level.
> >My conclusion is that is that their measure method was not up industrial
> >standards and is not meaningful. Holding him to the same standard as we
> >use for everyobne else, I want to see results from Charles Evans or have
> >him do his run just before the tube is clean.  What do you say Mike?
> >
> >     Jim
> >
> >
> >
> >Mary Tang wrote:
> >
> > > Hello SpecMat'ers --
> > >
> > > Shabbir was asking about the status of his SpecMat request to process
> > > diamond-coated wafers in the nitride tube.  I had a chat with him and
> > > learned more about what he wants.  He wants a smooth, dense nitride
> > > film on top of his wafers (so PECVD nitride will not do.)  I asked him
> > > if he had any information from the vendor about the quality of the CVD
> > > diamond film, and this is what he has provided.  Is this adequate to
> > > approve processing of these wafers in tylannitride?
> > >
> > > Mary
> > >
> > > -------- Original Message --------
> > > Subject: FW: Impurity levels in CVD diamond
> >      Date: Wed, 5 Nov 2003 11:58:03 -0800
> >      From: "Shabbir A. Bashar, Ph.D." <bashar at snf.stanford.edu>
> >        To: <mtang at snf.stanford.edu>
> > >
> > > Hi Mary,Here's the certification for our CVD diamond vendor.  I hope
> > > this will satisfy your needs.Shabbir.
> > > -----Original Message-----
> > > Sent: Wednesday, November 05, 2003 11:56 AM
> > > To: bashar at snf.stanford.edu
> > > Subject: Fwd: Impurity levels in P1 CVD diamond
> > >
> > > Note: forwarded message attached.
> > > -----------------------------------------------------------------------
> > > Do you Yahoo!?
> > > Protect your identity with Yahoo! Mail AddressGuard
> > >    ----------------------------------------------------------------
> > >
> > > Subject: Impurity levels in P1 CVD diamond
> > > Date: Tue, 4 Nov 2003 13:06:22 -0800
> > > From: "Michael Pinneo" <mpinneo at p1diamond.com>
> > > To: <Shabbir_Bashar at Group4Labs.com>
> > > CC: "John Herb" <jaherb at p1diamond.com>
> > >
> > > To whom it may concern:
> > >
> > > These comments concern non-carbon elemental impurity levels in CVD
> > > diamond materials made using plasma CVD in P1 Diamond deposition
> > > systems.
> > >
> > > The materials exposed to the deposition process are aluminum (chamber
> > > walls), molybdenum (substrate holder), and fused silica (observation
> > > windows).
> > >
> > > X-ray fluorescence tests done at FermiLab in 2001 on samples of our CVD
> > > diamond showed no metal or oxygen impurities above the detection limit
> > > of one part per million.  Silicon was found in the samples at
> > > concentrations less than 10ppm.
> > >
> > > Based on these results, P1's CVD diamond films meet or exceed
> > > requirements for designation as CMOS Grade or Electronic Grade
> > > materials.
> > >
> > > Sincerely,
> > >
> > >
> > > Michael Pinneo, Ph.D.
> > > CTO
> > >
> > > P1 Diamond, Inc.
> > > 3571 Leonard Court
> > > Santa Clara, CA  95054
> > >
> > > 408-567-9684 x103
> > > 408-567-9685  fax
> > >
> > >

--
Mary X. Tang, Ph.D.
National Nanofabrication Users' Network
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu





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