From mtang at snf.stanford.edu Wed Apr 7 11:20:14 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 7 Apr 2004 11:20:14 -0700 (PDT) Subject: Bonder Message-ID: Hi all -- I have a Specmat question. Keyote has several labmembers quite active in the lab these days (they do cool stuff -- polymers that you can inkjet to make films for electronic devices.) Anyway, one process they want to be able to do is this: 1. Aligned contact bond of silicon to silicon, under vacuum. This would be preceded by a rigorous clean (RCA-type or pre-diff plus megasonic.) 2. Thermal processing to permanently bond the wafers, ideally, a diffusion furnace, but without a pre-dif clean. You don't really want to wet process contact bonded wafers, and it would be presumed that the time lag is minimal so that the wafers should be clean from the bond clean. 3. Photolith on one side of the bonded wafers. 4. STS etch. The ideal plan would be to have them use the ksbond, which we are designating as the clean bond tool (the electrodes have been disconnected, so anodic bonding cannot be done.) However, we don't have an align tool for the ks. Mahnaz has been trying to get a quote from Suss, but they haven't really been able to get her one. Keyote is interested in this option, to the extent that they say they are willing to pay for up to half of an align tool (we told them it might be somewhere around $25K total.) However, the lead time will no doubt be very long -- we can't even get a quote from them. In the meantime, we also have the evbond system, which does have tooling for aligned bonds, but is terribly dirty. However, it seems to me that if evbond may present a short term solution. If we allow them to do alignment and contact bond under vacuum, but without heat, the transfer of sodium is minimized, just to points of contact on one side. I would suggest an extended water rinse afterward, maybe with just a hand sprayer. I think the concern with getting wafers wet is with handling in the wbdiff, which may take the wafers apart. I think (although I haven't asked -- this is just based on my limited experience in bonding at Berkeley) that gentle handling with a hand sprayer and air gun would be acceptable. When at Intel, an extended water rinse was found to eliminate most all of the sodium from the surface of silicon, and that the RCA clean got rid of the trace amounts. I have an old paper somewhere that shows this (I don't recall the exact numbers but it was actually only a few percent difference.) They can do the thermal processing in tylan4, which we have set aside for gold-contaminated processing (although I understand that we haven't as yet had any requests for gold-processing on this tube -- well several requests, but no follow through as yet, so it's still clean as of now). Once they go through litho and pre-etch rinse, any residual surface sodium should be removed. It seems to me that at this point, the wafers should be sufficiently "clean" for stsetch. What do you think? After this step, the wafers apparently go through CMP at a commercial vendor (I can't remember which one, but one that many labmembers use), who decontaminates them according to standard industrial practice before the wafers are returned to the lab. Again, I think the long term solution would be to obtain an alignment tool for the ksbond system. That way we can completely separate clean from non-clean bond processing. However, for the short term, I think it would be really helpful if we could somehow accomodate Keyote's needs. I should say that they haven't requested this -- I just had a chat with them and thought that this might be a viable approach, and am now proposing it to you all. I also think (and would suspect that Mahnaz agrees) that this should not be opened up, but that Keyote has demonstrated a genuine need and is willing to work with us on a more permanent solution. Moreover, the Keyote engineers are unsually good -- both technically and as lab citizens (the VP is Monty what's-his-name, a long-time labmember in good standing.) So... sorry for the long note -- but what do you think? Mary From hatogai at stanford.edu Thu Apr 8 20:12:26 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Thu, 8 Apr 2004 20:12:26 -0700 Subject: New Material registering request [Lens Bond Type SK-9] Message-ID: <000001c41de0$7f9641d0$b96240ab@toshibauser> Special Materials Committee: Thanks for the permission for using adhesive materials (SK-9) on "Drytek1" and "semhitachi" Now, we are going to use this adhesive materials (SK-9) on "Amtetcher"( AMT 8100 Plasma Etcher). What we are thinking about is to make SK-9 structures on top of thin SiO2 layer which is 200nm and using SK-9 structures as etch mask. Could you give us permission for using SK-9 on Amtecher? Sincerely, Tetsuhiro Hatogai (Hiro) -----Original Message----- From: Tetsuhiro (Hiro) Hatogai [mailto:hatogai at stanford.edu] Sent: Wednesday, March 03, 2004 11:23 PM To: 'specmat at snf.stanford.edu' Cc: 'pease at cis.Stanford.EDU'; 'Charles D Schaper' Subject: New Material registering request [Lens Bond Type SK-9] Special Materials Committee: We are going to evaluate several adhesive materials which are similar to Zipcone that we already have permission. Mainly we are going to use these materials in "Drytek1" and "semhitachi". Here is the application for new material, SK-9. I attached the MSDS for the material. Here is the information for the material required by following website. http://snf.stanford.edu/Materials/NewMatProc.html 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. Email address: hatogai at stanford.edu 4. Requestors PI: Professor R. Fabian W. Pease 5. Name of new chemical: Lens Bond Type SK-9 6. No other materials 7. Name of vendor: Summers Optical, A Division of EMS Acquisition 8. http://www.emsdiasum.com/default.htm 9. 1560 Industry Road - P O Box 380 - Hatfield, PA 19440 10. We would like to find materials that suit well to fabricate small structures 11. Find other material that is comparable with SK-9. 12. Drytek1, semhitachi 13. 1 oz. 14. Liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. It can be disposed as usual trash. 21. Process Flow: (1) Spin-coat PVA on a silicon wafer that has small structure on it using spin coater that our group owns in Packard 076 (2) Detach dried PVA film from silicon wafer, (3) Spin-coat SK-9 on the side that has structures on it of dried PVA film (4) Etch back SK-9 to reduce the thickness of residual layer using drytek1 (5) Observe the structures and measure the residual layer thickness using semhitachi Sincerely, Tetsuhiro Hatogai (Hiro) From lanzhangus at yahoo.com Fri Apr 9 11:48:15 2004 From: lanzhangus at yahoo.com (Lan Zhang) Date: Fri, 9 Apr 2004 11:48:15 -0700 (PDT) Subject: Permission to bring Cyantek Cr etchent Message-ID: <20040409184815.43466.qmail@web14311.mail.yahoo.com> Hi, I would like to use Cyantek Cr-14S wet etchent for my project. Cr-14S is in liquid form and is a mixture of acetic acid(9%) and ceric ammonium nitrate(22%) and water(69%) and I attached MSDS for the chemicals. I addressed the questions on the website as follows and will answer any more questions. Thanks. Lan Zhang Coherent Inc Requestor name: Lan Zhang Phone number: 510-435-2318 email address: lanzhangus at yahoo.com Requestor?s PI (Advisor) or Company: Coherent Inc The name of the new Chemical (give all names commonly used): Cyantek Cr14S (Mixture of Acetic acid and Ceric Ammonium Nitrate) If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. None Name of vendor/manufacturer that you are planning to obtain this material from: Cyantek URL for vendor?s website where info on the proposed chemical can be found: http://www.cyantek.com/ Vendor?s address and phone number: Cyantek Corporation, Inc 3055 Osgood Court, Fremont, CA 94539 (510) 651-3341 FAX (510) 651-3398 What is your reason for wanting to bring this material into the lab: Wet-etch Cr film and final strip off Make a strong case why you can not use an already approved chemical/material for this purpose: I need well controlled Cr etchent to obtain submicron Cr line which is most critical for my project List all the lab equipment and wet benches that you propose to use with this chemical: Wbgeneral Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 1/2 gallon or 100ml/two month State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): liquid State whether the chemical needed to be mixed to use it: No From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. see attachment If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. N/A Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. --------------------------------- Do you Yahoo!? Yahoo! Small Business $15K Web Design Giveaway - Enter today -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: CR-14S.DOC Type: application/msword Size: 32256 bytes Desc: CR-14S.DOC URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Use Cr-14S.doc Type: application/msword Size: 19456 bytes Desc: Use Cr-14S.doc URL: From lanzhangus at yahoo.com Mon Apr 12 22:33:56 2004 From: lanzhangus at yahoo.com (Lan Zhang) Date: Mon, 12 Apr 2004 22:33:56 -0700 (PDT) Subject: Shipley 1805 and developer 351 Message-ID: <20040413053356.3920.qmail@web14310.mail.yahoo.com> Hi, I sent a request for Cr14 wet etchant early and found SNF has Cr14. I would like to withdraw the request. Sorry for the confusion. I talked to Mahnaz about using Shipley S1805 and 351 developer this morning. S1805's MSDS can be found at MSDS binder and 351 developer is similiar to other Shipley's developer in the lab. The MSDS of 351 developer is included. Let me know if you have questions. Thanks, Lan --------------------------------- Do you Yahoo!? Yahoo! Small Business $15K Web Design Giveaway - Enter today -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: 351 Developer.doc Type: application/msword Size: 40960 bytes Desc: 351 Developer.doc URL: From shott at snf.stanford.edu Tue Apr 13 04:13:43 2004 From: shott at snf.stanford.edu (John Shott) Date: Tue, 13 Apr 2004 04:13:43 -0700 Subject: Shipley 1805 and developer 351 In-Reply-To: <20040413053356.3920.qmail@web14310.mail.yahoo.com> Message-ID: Lan and specmat: It appears that developer 351 is a sodium hydroxide based developer ... I thought that virtually all of our other developers were based on TMAH and that we had avoided the use of the mobile metal ion based developers containing NaOH or KOH. Am I hopelessly out of date on this score? Thanks, John -------------- next part -------------- An HTML attachment was scrubbed... URL: From mtang at snf.stanford.edu Tue Apr 13 07:16:56 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 13 Apr 2004 07:16:56 -0700 Subject: Shipley 1805 and developer 351 Message-ID: <407BF657.9024FE86@snf.stanford.edu> Goodness, I quite agree, having once worked in a lab that used similar stuff. Lan, is there a compelling, technical reason why you want 351? Is S1805 a dyed resist? Is 351 recommended for S1805? Have you considered using S3617, which is our standard dyed resist? Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mahnaz at snf.stanford.edu Tue Apr 13 08:30:51 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 13 Apr 2004 08:30:51 -0700 Subject: Shipley 1805 and developer 351 References: <20040413053356.3920.qmail@web14310.mail.yahoo.com> Message-ID: <407C07AB.2D258C22@snf.stanford.edu> Hi Lan, Go ahead and order your chemicals. You need to obtain a yellow labels from me for both resist and developer. The resist can be manually spun at svg coater, headway and laurell ( you decide). Developer can be used at webmisel. when you get the chemicals I like to borrow some to do a experiment. Please put a copy of develoer MSDS in the binder. mahnaz Lan Zhang wrote: > Hi, I sent a request for Cr14 wet etchant early and found SNF has > Cr14. I would like to withdraw the request. Sorry for the > confusion. I talked to Mahnaz about using Shipley S1805 and 351 > developer this morning. S1805's MSDS can be found at MSDS binder and > 351 developer is similiar to other Shipley's developer in the lab. > The MSDS of 351 developer is included. Let me know if you have > questions. Thanks,Lan > ----------------------------------------------------------------------- > Do you Yahoo!? > Yahoo! Small Business $15K Web Design Giveaway - Enter today -------------- next part -------------- An HTML attachment was scrubbed... URL: From lanzhangus at yahoo.com Tue Apr 13 08:41:09 2004 From: lanzhangus at yahoo.com (Lan Zhang) Date: Tue, 13 Apr 2004 08:41:09 -0700 (PDT) Subject: Shipley 1805 and developer 351 In-Reply-To: <407BF657.9024FE86@snf.stanford.edu> Message-ID: <20040413154109.25133.qmail@web14311.mail.yahoo.com> Mary and John, Thanks for the input. Can MF319 be used instead? It is listed in MSDS binder. The reason for using S1805 is that a thin resist (0.5um) is preferred to achieve 0.5um line width with contact aligner(0.5" wafer). I try to avoid to use thinner to keep process repeatable. In my past experience, I can achieve 0.3um linewith by controlling the develop process using combination of 1805/351. I welcome any suggestion and intend to use SNF existing process. Thanks, Lan Mary Tang wrote: Goodness, I quite agree, having once worked in a lab that used similar stuff. Lan, is there a compelling, technical reason why you want 351? Is S1805 a dyed resist? Is 351 recommended for S1805? Have you considered using S3617, which is our standard dyed resist? Mary -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu --------------------------------- Do you Yahoo!? Yahoo! Small Business $15K Web Design Giveaway - Enter today -------------- next part -------------- An HTML attachment was scrubbed... URL: From shott at snf.stanford.edu Tue Apr 13 08:45:44 2004 From: shott at snf.stanford.edu (John Shott) Date: Tue, 13 Apr 2004 08:45:44 -0700 Subject: Shipley 1805 and developer 351 In-Reply-To: <20040413154109.25133.qmail@web14311.mail.yahoo.com> Message-ID: Lan: Certainly MF319 would be preferred from the standpoint of mobile ion contamination. I've got no experience, however, to say whether MF319 works well with S1805 resist. When you say that you hope to achieve 0.5 um linewidths, I trust that means that you have masks that were made outside as we have no ability to produce features anywhere that small on a 1X mask with out mask making tools. Thanks, John -------------- next part -------------- An HTML attachment was scrubbed... URL: From lanzhangus at yahoo.com Tue Apr 13 08:58:23 2004 From: lanzhangus at yahoo.com (Lan Zhang) Date: Tue, 13 Apr 2004 08:58:23 -0700 (PDT) Subject: Shipley 1805 and developer 351 In-Reply-To: <200404131545.i3DFjn0h017801@smtp2.Stanford.EDU> Message-ID: <20040413155823.5697.qmail@web14302.mail.yahoo.com> John, Thanks. MF319 can be used to develop S1805 but I also do not have experience. Mask is made outside with 0.5um CD. Lan John Shott wrote: Lan: Certainly MF319 would be preferred from the standpoint of mobile ion contamination. I've got no experience, however, to say whether MF319 works well with S1805 resist. When you say that you hope to achieve 0.5 um linewidths, I trust that means that you have masks that were made outside as we have no ability to produce features anywhere that small on a 1X mask with out mask making tools. Thanks, John --------------------------------- Do you Yahoo!? Yahoo! Small Business $15K Web Design Giveaway - Enter today -------------- next part -------------- An HTML attachment was scrubbed... URL: From mcvittie at snf.stanford.edu Tue Apr 13 12:13:12 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Tue, 13 Apr 2004 12:13:12 -0700 Subject: Shipley 1805 and developer 351 References: <20040413053356.3920.qmail@web14310.mail.yahoo.com> <407C07AB.2D258C22@snf.stanford.edu> Message-ID: <407C3BC8.AB131DEA@snf.stanford.edu> Mahnaz, I am surprized that there is any question about allowing 351 into the lab. Some years back we made a big effort to get all sodium hydroxide based developers out of the lab. Maybe this info never got passed on to you. Jim Mahnaz Mansourpour wrote: > Hi Lan, > > Go ahead and order your chemicals. You need to obtain a yellow labels > from me for both resist and developer. > The resist can be manually spun at svg coater, headway and laurell ( > you decide). > Developer can be used at webmisel. when you get the chemicals I like > to borrow some to do a experiment. > Please put a copy of develoer MSDS in the binder. > > mahnaz > > Lan Zhang wrote: > >> Hi, I sent a request for Cr14 wet etchant early and found SNF has >> Cr14. I would like to withdraw the request. Sorry for the >> confusion. I talked to Mahnaz about using Shipley S1805 and 351 >> developer this morning. S1805's MSDS can be found at MSDS binder >> and 351 developer is similiar to other Shipley's developer in the >> lab. The MSDS of 351 developer is included. Let me know if you >> have questions. Thanks,Lan >> --------------------------------------------------------------------- >> Do you Yahoo!? >> Yahoo! Small Business $15K Web Design Giveaway - Enter today > -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mahnaz at snf.stanford.edu Tue Apr 13 13:44:58 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 13 Apr 2004 13:44:58 -0700 Subject: Shipley 1805 and developer 351 References: <20040413053356.3920.qmail@web14310.mail.yahoo.com> <407C07AB.2D258C22@snf.stanford.edu> <407C3BC8.AB131DEA@snf.stanford.edu> Message-ID: <407C514A.66622658@snf.stanford.edu> All, I kind a messed up , thanks for catching it although I have told him in the lab that he should use the new developer ( MF-26A ( Shipley) I have ordered for dns track. He told me that the material is on our web site already. I should have paid closer attention Jim. Jim McVittie wrote: > Mahnaz, > > I am surprized that there is any question about allowing 351 into the > lab. Some years back we made a big effort to get all sodium hydroxide > based developers out of the lab. Maybe this info never got passed on to > you. > > Jim > > Mahnaz Mansourpour wrote: > > > Hi Lan, > > > > Go ahead and order your chemicals. You need to obtain a yellow labels > > from me for both resist and developer. > > The resist can be manually spun at svg coater, headway and laurell ( > > you decide). > > Developer can be used at webmisel. when you get the chemicals I like > > to borrow some to do a experiment. > > Please put a copy of develoer MSDS in the binder. > > > > mahnaz > > > > Lan Zhang wrote: > > > >> Hi, I sent a request for Cr14 wet etchant early and found SNF has > >> Cr14. I would like to withdraw the request. Sorry for the > >> confusion. I talked to Mahnaz about using Shipley S1805 and 351 > >> developer this morning. S1805's MSDS can be found at MSDS binder > >> and 351 developer is similiar to other Shipley's developer in the > >> lab. The MSDS of 351 developer is included. Let me know if you > >> have questions. Thanks,Lan > >> --------------------------------------------------------------------- > >> Do you Yahoo!? > >> Yahoo! Small Business $15K Web Design Giveaway - Enter today > > From mahnaz at snf.stanford.edu Tue Apr 13 16:44:34 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 13 Apr 2004 16:44:34 -0700 Subject: [Fwd: Attempt to get permission to do gold plating in SNF] Message-ID: <407C7B61.39632F2@snf.stanford.edu> -------------- next part -------------- An embedded message was scrubbed... From: "James Liu" Subject: Attempt to get permission to do gold plating in SNF Date: Tue, 13 Apr 2004 16:12:44 -0700 Size: 56154 URL: From mcvittie at cis.Stanford.EDU Tue Apr 13 17:00:46 2004 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Tue, 13 Apr 2004 17:00:46 -0700 (PDT) Subject: Zn deposition in the Metalica In-Reply-To: <407C60F6.AC3C67B6@snf.stanford.edu> Message-ID: Hi Jeanie, Sorry, for not bring you on board. I have worked out an arrangement with Rafael and Mike on they can run Zn in the Metalica without impacting other users. Here is what we agreed to: 1. Make their own target clamp for sputter gun. 2. Make their own anode for sputter gun. 3. Use their own sputter "chimmy". 4. Cover bottom of wafer tray with Al foil. 5. Cut hole in Al foil and mount samples to the foil above the hole. 6. Limit deposition < 500A. 7. Only use gun A. 8. Replace re-install all the system std part after their run is complete. By using this method they should be able to do thin Au-Zn (5 %) depositions without leaving any Zn in the system after their runs. Thanks, Jim On Tue, 13 Apr 2004, Jeannie Perez wrote: > > Hi Jim, > I've not been notified that Zn has been approved by the SpecMat > committee to be use in the Metalica or Innotec. Is this a one time deal? > Is this an OK for both system? Could you give me some details. melting > point below In. > -- > Jeannie Perez > Stanford Nanofabrication Facility > CIS Room 146, Mail Code 4070 > Stanford, CA 94305 > (650) 723-7997 > jperez at snf.stanford.edu > > -- -------------------------------------------------------------- Jim McVittie, Ph.D. Senior Research Scientist Allen Center for Integrated Systems Electrical Engineering Stanford University jmcvittie at stanford.edu Rm. 336, 330 Serra Mall Fax: (650) 723-4659 Stanford, CA 94305-4075 Tel: (650) 725-3640 From mtang at snf.stanford.edu Wed Apr 14 08:06:27 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 14 Apr 2004 08:06:27 -0700 Subject: Zn deposition in the Metalica References: Message-ID: <407D5373.4EA35188@snf.stanford.edu> JIM!!!! AAACK!!! We've been abiding by your guideline, stated last summer for Innotec, and by inference, for metalica, that anything with a vapor pressure higher than that of In would not be allowed in these systems. We have had several requests for zinc since then, and have deferred people to Berkeley or Ginzton. Including Rafael and Mike... Truly, I'm glad they went to you to work this out.... but PLEASE keep us (SpecMat and Jeannie) informed. It's only courteous, and it helps that our organization should be presenting a consistent front. Please, Jim, this happens more often than we'd like (Ge in the 4108, most recently, for example) and when are not in communication, it makes things difficult for the maintenance, labmembers, and process folk who are not in the same loop. It ends up in a lot of misunderstanding and a lot of yelling that does not have to happen. It seems to me that SpecMat ought to be the forum in which these things are decided, or at least, the info is disseminated, and from there it should be each of our responsibilities to inform the correct people. Since emails to SpecMat are archived, we have a record of what was decided and when. And it seems that in light of recent events in which the manner in which we execute on policy was called into question, that we should try to be more diligent in documenting such decisions. So, that's my rant. Jim, there is no doubt that you are the expert and final word on issues of contamination (among many others), but all I ask is that people involved be informed... Please? Back to the request: does this mean that Zn may be run by others who abide by these guidelines? (Providing their own parts and limiting to thin depositions?) If so, would an OK and training by Jeannie/maintenance (who would vet the user to be sure the requestor was competent on the system) be sufficient to allow other users to do this? Or is this a one-time OK? Since this involves hardware changes, should we also inform Dick/Jim Haydon? (I admit that I don't know how involved these hardware changes are.) Mary Jim McVittie wrote: > Hi Jeanie, > > Sorry, for not bring you on board. I have worked out an arrangement with > Rafael and Mike on they can run Zn in the Metalica without impacting other > users. Here is what we agreed to: > > 1. Make their own target clamp for sputter gun. > > 2. Make their own anode for sputter gun. > > 3. Use their own sputter "chimmy". > > 4. Cover bottom of wafer tray with Al foil. > > 5. Cut hole in Al foil and mount samples to the foil above the hole. > > 6. Limit deposition < 500A. > > 7. Only use gun A. > > 8. Replace re-install all the system std part after their run is complete. > > By using this method they should be able to do thin Au-Zn (5 %) > depositions without leaving any Zn in the system after their runs. > > Thanks, Jim > > On Tue, 13 Apr 2004, Jeannie Perez wrote: > > > > > Hi Jim, > > I've not been notified that Zn has been approved by the SpecMat > > committee to be use in the Metalica or Innotec. Is this a one time deal? > > Is this an OK for both system? Could you give me some details. melting > > point below In. > > -- > > Jeannie Perez > > Stanford Nanofabrication Facility > > CIS Room 146, Mail Code 4070 > > Stanford, CA 94305 > > (650) 723-7997 > > jperez at snf.stanford.edu > > > > > > -- > -------------------------------------------------------------- > Jim McVittie, Ph.D. Senior Research Scientist > Allen Center for Integrated Systems Electrical Engineering > Stanford University jmcvittie at stanford.edu > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > Stanford, CA 94305-4075 Tel: (650) 725-3640 -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mcvittie at cis.Stanford.EDU Wed Apr 14 10:38:51 2004 From: mcvittie at cis.Stanford.EDU (Jim McVittie) Date: Wed, 14 Apr 2004 10:38:51 -0700 (PDT) Subject: Zn deposition in the Metalica In-Reply-To: <407D5373.4EA35188@snf.stanford.edu> Message-ID: Mary, I think it is would be a big mistake to open up the Metalica up to general Zn use. I have a number of reasons for saying this. 1. Zn is a problem material in vacuums. One has to be very careful in using it in a vacuum dep system. If not controlled, it will go everywhere in the system and every deposition will be Zn doped. It will move around if a surface goes above 100C. There is no way Zn will be contained to removable parts if the tool is opened up for general Zn. 2. Although the Matelica is a "dirty" system, Zn contamination is a problem for some users. Users do use this tool for contacting Si and Ge devices. The fact that they are using the Metalica means these are not critical devices. 3. Rafael and Mike are working with low percentages of Zn (< 5%) in Au and thin layers ( 300A). So the amount of Zn being sputtered is very small ( range of 15A thickness at sample). 4. Rafael spent the weekend machining replacement parts for all surfaces onto which the Zn is deposited. The exception is the wafer turret/plate where Al foil will be used as a barrier. 5. On removing all the surfaces with Zn on them, I feel a very careful user can keep the small amounts of Zn in control. 6. I have a lot of faith in Rafael and Mike following a special procedure. I do not have faith in our general users' ability to follow the same procedure. 7. For Stanford students, who have demonstrated excellent experimental ability, I willing to go the extra mile to find solutions for their processing problems. Jim On Wed, 14 Apr 2004, Mary Tang wrote: > JIM!!!! AAACK!!! > > We've been abiding by your guideline, stated last summer for Innotec, and by > inference, for metalica, that anything with a vapor pressure higher than that > of In would not be allowed in these systems. We have had several requests for > zinc since then, and have deferred people to Berkeley or Ginzton. Including > Rafael and Mike... > > Truly, I'm glad they went to you to work this out.... but PLEASE keep us > (SpecMat and Jeannie) informed. It's only courteous, and it helps that our > organization should be presenting a consistent front. Please, Jim, this > happens more often than we'd like (Ge in the 4108, most recently, for example) > and when are not in communication, it makes things difficult for the > maintenance, labmembers, and process folk who are not in the same loop. It > ends up in a lot of misunderstanding and a lot of yelling that does not have > to happen. It seems to me that SpecMat ought to be the forum in which these > things are decided, or at least, the info is disseminated, and from there it > should be each of our responsibilities to inform the correct people. Since > emails to SpecMat are archived, we have a record of what was decided and > when. And it seems that in light of recent events in which the manner in > which we execute on policy was called into question, that we should try to be > more diligent in documenting such decisions. > > So, that's my rant. Jim, there is no doubt that you are the expert and final > word on issues of contamination (among many others), but all I ask is that > people involved be informed... Please? > > Back to the request: does this mean that Zn may be run by others who abide by > these guidelines? (Providing their own parts and limiting to thin > depositions?) If so, would an OK and training by Jeannie/maintenance (who > would vet the user to be sure the requestor was competent on the system) be > sufficient to allow other users to do this? Or is this a one-time OK? Since > this involves hardware changes, should we also inform Dick/Jim Haydon? (I > admit that I don't know how involved these hardware changes are.) > > Mary > > Jim McVittie wrote: > > > Hi Jeanie, > > > > Sorry, for not bring you on board. I have worked out an arrangement with > > Rafael and Mike on they can run Zn in the Metalica without impacting other > > users. Here is what we agreed to: > > > > 1. Make their own target clamp for sputter gun. > > > > 2. Make their own anode for sputter gun. > > > > 3. Use their own sputter "chimmy". > > > > 4. Cover bottom of wafer tray with Al foil. > > > > 5. Cut hole in Al foil and mount samples to the foil above the hole. > > > > 6. Limit deposition < 500A. > > > > 7. Only use gun A. > > > > 8. Replace re-install all the system std part after their run is complete. > > > > By using this method they should be able to do thin Au-Zn (5 %) > > depositions without leaving any Zn in the system after their runs. > > > > Thanks, Jim > > > > On Tue, 13 Apr 2004, Jeannie Perez wrote: > > > > > > > > Hi Jim, > > > I've not been notified that Zn has been approved by the SpecMat > > > committee to be use in the Metalica or Innotec. Is this a one time deal? > > > Is this an OK for both system? Could you give me some details. melting > > > point below In. > > > -- > > > Jeannie Perez > > > Stanford Nanofabrication Facility > > > CIS Room 146, Mail Code 4070 > > > Stanford, CA 94305 > > > (650) 723-7997 > > > jperez at snf.stanford.edu > > > > > > > > > > -- > > -------------------------------------------------------------- > > Jim McVittie, Ph.D. Senior Research Scientist > > Allen Center for Integrated Systems Electrical Engineering > > Stanford University jmcvittie at stanford.edu > > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > > Stanford, CA 94305-4075 Tel: (650) 725-3640 > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > -- -------------------------------------------------------------- Jim McVittie, Ph.D. Senior Research Scientist Allen Center for Integrated Systems Electrical Engineering Stanford University jmcvittie at stanford.edu Rm. 336, 330 Serra Mall Fax: (650) 723-4659 Stanford, CA 94305-4075 Tel: (650) 725-3640 From mtang at snf.stanford.edu Wed Apr 14 11:01:48 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 14 Apr 2004 11:01:48 -0700 Subject: Zn deposition in the Metalica References: Message-ID: <407D7C8C.73AE4E8F@snf.stanford.edu> Thanks Jim, for clarifying this. Now, I have a better understanding of the issues you have considered. Just to confirm, this specific process is allowed only for Rafael and Mike. (We needed to know this, because practices like this get propagated if we don't define the boundaries to begin with. Rafael and Mike need to know this as well, so that other Harris group members don't share in this privilege.) I take it that any future, similar requests from other people must go through SpecMat? Mary Jim McVittie wrote: > Mary, > > I think it is would be a big mistake to open up the Metalica up to general > Zn use. I have a number of reasons for saying this. > > 1. Zn is a problem material in vacuums. One has to be very careful in > using it in a vacuum dep system. If not controlled, it will go everywhere > in the system and every deposition will be Zn doped. It will move around > if a surface goes above 100C. There is no way Zn will be contained to > removable parts if the tool is opened up for general Zn. > > 2. Although the Matelica is a "dirty" system, Zn contamination is a > problem for some users. Users do use this tool for contacting Si and Ge > devices. The fact that they are using the Metalica means these are not > critical devices. > > 3. Rafael and Mike are working with low percentages of Zn (< 5%) in Au and > thin layers ( 300A). So the amount of Zn being sputtered is very small ( > range of 15A thickness at sample). > > 4. Rafael spent the weekend machining replacement parts for all surfaces > onto which the Zn is deposited. The exception is the wafer turret/plate > where Al foil will be used as a barrier. > > 5. On removing all the surfaces with Zn on them, I feel a very careful > user can keep the small amounts of Zn in control. > > 6. I have a lot of faith in Rafael and Mike following a special procedure. > I do not have faith in our general users' ability to follow the same > procedure. > > 7. For Stanford students, who have demonstrated excellent experimental > ability, I willing to go the extra mile to find solutions for their > processing problems. > > Jim > > On Wed, 14 Apr 2004, Mary Tang wrote: > > > JIM!!!! AAACK!!! > > > > We've been abiding by your guideline, stated last summer for Innotec, and by > > inference, for metalica, that anything with a vapor pressure higher than that > > of In would not be allowed in these systems. We have had several requests for > > zinc since then, and have deferred people to Berkeley or Ginzton. Including > > Rafael and Mike... > > > > Truly, I'm glad they went to you to work this out.... but PLEASE keep us > > (SpecMat and Jeannie) informed. It's only courteous, and it helps that our > > organization should be presenting a consistent front. Please, Jim, this > > happens more often than we'd like (Ge in the 4108, most recently, for example) > > and when are not in communication, it makes things difficult for the > > maintenance, labmembers, and process folk who are not in the same loop. It > > ends up in a lot of misunderstanding and a lot of yelling that does not have > > to happen. It seems to me that SpecMat ought to be the forum in which these > > things are decided, or at least, the info is disseminated, and from there it > > should be each of our responsibilities to inform the correct people. Since > > emails to SpecMat are archived, we have a record of what was decided and > > when. And it seems that in light of recent events in which the manner in > > which we execute on policy was called into question, that we should try to be > > more diligent in documenting such decisions. > > > > So, that's my rant. Jim, there is no doubt that you are the expert and final > > word on issues of contamination (among many others), but all I ask is that > > people involved be informed... Please? > > > > Back to the request: does this mean that Zn may be run by others who abide by > > these guidelines? (Providing their own parts and limiting to thin > > depositions?) If so, would an OK and training by Jeannie/maintenance (who > > would vet the user to be sure the requestor was competent on the system) be > > sufficient to allow other users to do this? Or is this a one-time OK? Since > > this involves hardware changes, should we also inform Dick/Jim Haydon? (I > > admit that I don't know how involved these hardware changes are.) > > > > Mary > > > > Jim McVittie wrote: > > > > > Hi Jeanie, > > > > > > Sorry, for not bring you on board. I have worked out an arrangement with > > > Rafael and Mike on they can run Zn in the Metalica without impacting other > > > users. Here is what we agreed to: > > > > > > 1. Make their own target clamp for sputter gun. > > > > > > 2. Make their own anode for sputter gun. > > > > > > 3. Use their own sputter "chimmy". > > > > > > 4. Cover bottom of wafer tray with Al foil. > > > > > > 5. Cut hole in Al foil and mount samples to the foil above the hole. > > > > > > 6. Limit deposition < 500A. > > > > > > 7. Only use gun A. > > > > > > 8. Replace re-install all the system std part after their run is complete. > > > > > > By using this method they should be able to do thin Au-Zn (5 %) > > > depositions without leaving any Zn in the system after their runs. > > > > > > Thanks, Jim > > > > > > On Tue, 13 Apr 2004, Jeannie Perez wrote: > > > > > > > > > > > Hi Jim, > > > > I've not been notified that Zn has been approved by the SpecMat > > > > committee to be use in the Metalica or Innotec. Is this a one time deal? > > > > Is this an OK for both system? Could you give me some details. melting > > > > point below In. > > > > -- > > > > Jeannie Perez > > > > Stanford Nanofabrication Facility > > > > CIS Room 146, Mail Code 4070 > > > > Stanford, CA 94305 > > > > (650) 723-7997 > > > > jperez at snf.stanford.edu > > > > > > > > > > > > > > -- > > > -------------------------------------------------------------- > > > Jim McVittie, Ph.D. Senior Research Scientist > > > Allen Center for Integrated Systems Electrical Engineering > > > Stanford University jmcvittie at stanford.edu > > > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > > > Stanford, CA 94305-4075 Tel: (650) 725-3640 > > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > > > > -- > -------------------------------------------------------------- > Jim McVittie, Ph.D. Senior Research Scientist > Allen Center for Integrated Systems Electrical Engineering > Stanford University jmcvittie at stanford.edu > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > Stanford, CA 94305-4075 Tel: (650) 725-3640 -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From bipin at stanford.edu Wed Apr 14 11:06:44 2004 From: bipin at stanford.edu (Bipin Rajendran) Date: Wed, 14 Apr 2004 11:06:44 -0700 Subject: Laser Annealing Experiment Message-ID: <02a701c4224b$3ee91210$fa6140ab@supernova> Dear SpecMat Committee Members, I wanted to seek your permission/suggestions to do some Laser Annealing Experiments on Si wafers for 3D Integration Project, I am working on with Prof Fabian Pease. Prof Byer's lab in Ginztopn has a high power, ultra-fast laser source (1064nm) which I want to use for doing laser annealing on my wafers. The steps I am thinking of doing are outlined below: 1.. Run a standard MOS Capacitor process, with Al gate, on 4' Si wafers. 2.. Deposit a layer of LTO on the wafer. (This can be done on tylanbpsg) 3.. I want to deposit a 0.1-0.2mm thick amorphous silicon layer on top of this LTO. Since there is no PECVD tube where this can be done, I am planning to send my wafers to a company called Seaway Semiconductors that does this. 4.. I want to then deposit a thin layer of Ti above this Si layer. (Can this be done at SNF?) 5.. Once I have done these steps, I want to take my wafers out to Prof. Byer's lab and expose the wafer to the high-energy pulses. They just have a laser source, so I should build my own wafer holders (probably enclosed in a box, with a glass window). I can pump Nitrogen into this box. If the annealing is done in that ambient, Can I bring my wafers back to SNF to etch the deposited LTO, amorphous-Si and Ti layers. 6.. The aim of this experiment is to see how much the C-V of the first layer Capacitors are affected by the laser annealing process. Any suggestions would be appreciated. Thanks Bipin -------------- next part -------------- An HTML attachment was scrubbed... URL: From mcvittie at snf.stanford.edu Wed Apr 14 14:38:01 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Wed, 14 Apr 2004 14:38:01 -0700 Subject: Laser Annealing Experiment References: <02a701c4224b$3ee91210$fa6140ab@supernova> Message-ID: <407DAF39.E6AE0FBD@snf.stanford.edu> Bipin, 1.Can I get more info on Seaway Semiconductor? I would like to know how they are depositing their a-Si and what applications their films are serving. In the past, when the optics people have given me thick PECVD oxide films deposited on the outside, I found that they were loaded with metals. There was a problem about allowing their films into the clean etchers. Such metals in your film would affect your CVs. 2. What are the properties are you looking for in your a-Si? Normal PECVD a-Si is loaded with H. It can be over 20%. There is a doped Si target for the Balzers, which can be used to sputter deposit a-Si. 3. With some process development, we could deposition a-Si in the STS dep tool but it would have a lot of N in it besides H and would have a very high HF etch rate. I am not recommending such a film for your application. Jim Bipin Rajendran wrote: > Dear SpecMat Committee Members, > > I wanted to seek your permission/suggestions to do some Laser > Annealing Experiments on Si wafers for 3D Integration Project, I am > working on with Prof Fabian Pease. > > "urn:schemas-microsoft-com:office:office" /> > > Prof Byer?s lab in Ginztopn has a high power, ultra-fast laser source > (1064nm) which I want to use for doing laser annealing on my > wafers.The steps I am thinking of doing are outlined below: > > 1. Run a standard MOS Capacitor process, with Al gate, on 4? Si > wafers. > 2. Deposit a layer of LTO on the wafer. (This can be done on > tylanbpsg) > 3. I want to deposit a 0.1-0.2mm thick amorphous silicon layer on > top of this LTO. Since there is no PECVD tube where this can be > done, I am planning to send my wafers to a company called Seaway > Semiconductors that does this. > 4. I want to then deposit a thin layer of Ti above this Si layer. > (Can this be done at SNF?) > 5. Once I have done these steps, I want to take my wafers out to > Prof. Byer?s lab and expose the wafer to the high-energy pulses. > They just have a laser source, so I should build my own wafer > holders (probably enclosed in a box, with a glass window). I can > pump Nitrogen into this box. If the annealing is done in that > ambient, Can I bring my wafers back to SNF to etch the deposited > LTO, amorphous-Si and Ti layers. > 6. The aim of this experiment is to see how much the C-V of the > first layer Capacitors are affected by the laser annealing > process. > > Any suggestions would be appreciated. > > Thanks > > Bipin -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From jperez at snf.stanford.edu Thu Apr 15 07:53:31 2004 From: jperez at snf.stanford.edu (Jeannie Perez) Date: Thu, 15 Apr 2004 07:53:31 -0700 Subject: Zn deposition in the Metalica References: <407D7C8C.73AE4E8F@snf.stanford.edu> Message-ID: <407EA1EA.918A9758@snf.stanford.edu> F.Y.I. During training with Rafael we did strike a plasma (Zn). The time was so short (25 seconds) with 50 watts, that we didn't scroll to check volts and current. We were concentrating on the time. We decided to just sputter on a blank part of the foil to get the measurements needed to log, but no plasma the second or third time on target A source gun. Mike couldn't get a thickness measurement from the Zygo (300A). There is one piece that isn't being protected and the user after us didn't want to use the part or source gun. I gave the part to maintenance for cleaning. My understanding from Rafael yesterday is that they intend to use it with others following. Jeannie Mary Tang wrote: > Thanks Jim, for clarifying this. Now, I have a better understanding of the issues > you have considered. Just to confirm, this specific process is allowed only for > Rafael and Mike. (We needed to know this, because practices like this get > propagated if we don't define the boundaries to begin with. Rafael and Mike need to > know this as well, so that other Harris group members don't share in this > privilege.) I take it that any future, similar requests from other people must go > through SpecMat? > > Mary > > Jim McVittie wrote: > > > Mary, > > > > I think it is would be a big mistake to open up the Metalica up to general > > Zn use. I have a number of reasons for saying this. > > > > 1. Zn is a problem material in vacuums. One has to be very careful in > > using it in a vacuum dep system. If not controlled, it will go everywhere > > in the system and every deposition will be Zn doped. It will move around > > if a surface goes above 100C. There is no way Zn will be contained to > > removable parts if the tool is opened up for general Zn. > > > > 2. Although the Matelica is a "dirty" system, Zn contamination is a > > problem for some users. Users do use this tool for contacting Si and Ge > > devices. The fact that they are using the Metalica means these are not > > critical devices. > > > > 3. Rafael and Mike are working with low percentages of Zn (< 5%) in Au and > > thin layers ( 300A). So the amount of Zn being sputtered is very small ( > > range of 15A thickness at sample). > > > > 4. Rafael spent the weekend machining replacement parts for all surfaces > > onto which the Zn is deposited. The exception is the wafer turret/plate > > where Al foil will be used as a barrier. > > > > 5. On removing all the surfaces with Zn on them, I feel a very careful > > user can keep the small amounts of Zn in control. > > > > 6. I have a lot of faith in Rafael and Mike following a special procedure. > > I do not have faith in our general users' ability to follow the same > > procedure. > > > > 7. For Stanford students, who have demonstrated excellent experimental > > ability, I willing to go the extra mile to find solutions for their > > processing problems. > > > > Jim > > > > On Wed, 14 Apr 2004, Mary Tang wrote: > > > > > JIM!!!! AAACK!!! > > > > > > We've been abiding by your guideline, stated last summer for Innotec, and by > > > inference, for metalica, that anything with a vapor pressure higher than that > > > of In would not be allowed in these systems. We have had several requests for > > > zinc since then, and have deferred people to Berkeley or Ginzton. Including > > > Rafael and Mike... > > > > > > Truly, I'm glad they went to you to work this out.... but PLEASE keep us > > > (SpecMat and Jeannie) informed. It's only courteous, and it helps that our > > > organization should be presenting a consistent front. Please, Jim, this > > > happens more often than we'd like (Ge in the 4108, most recently, for example) > > > and when are not in communication, it makes things difficult for the > > > maintenance, labmembers, and process folk who are not in the same loop. It > > > ends up in a lot of misunderstanding and a lot of yelling that does not have > > > to happen. It seems to me that SpecMat ought to be the forum in which these > > > things are decided, or at least, the info is disseminated, and from there it > > > should be each of our responsibilities to inform the correct people. Since > > > emails to SpecMat are archived, we have a record of what was decided and > > > when. And it seems that in light of recent events in which the manner in > > > which we execute on policy was called into question, that we should try to be > > > more diligent in documenting such decisions. > > > > > > So, that's my rant. Jim, there is no doubt that you are the expert and final > > > word on issues of contamination (among many others), but all I ask is that > > > people involved be informed... Please? > > > > > > Back to the request: does this mean that Zn may be run by others who abide by > > > these guidelines? (Providing their own parts and limiting to thin > > > depositions?) If so, would an OK and training by Jeannie/maintenance (who > > > would vet the user to be sure the requestor was competent on the system) be > > > sufficient to allow other users to do this? Or is this a one-time OK? Since > > > this involves hardware changes, should we also inform Dick/Jim Haydon? (I > > > admit that I don't know how involved these hardware changes are.) > > > > > > Mary > > > > > > Jim McVittie wrote: > > > > > > > Hi Jeanie, > > > > > > > > Sorry, for not bring you on board. I have worked out an arrangement with > > > > Rafael and Mike on they can run Zn in the Metalica without impacting other > > > > users. Here is what we agreed to: > > > > > > > > 1. Make their own target clamp for sputter gun. > > > > > > > > 2. Make their own anode for sputter gun. > > > > > > > > 3. Use their own sputter "chimmy". > > > > > > > > 4. Cover bottom of wafer tray with Al foil. > > > > > > > > 5. Cut hole in Al foil and mount samples to the foil above the hole. > > > > > > > > 6. Limit deposition < 500A. > > > > > > > > 7. Only use gun A. > > > > > > > > 8. Replace re-install all the system std part after their run is complete. > > > > > > > > By using this method they should be able to do thin Au-Zn (5 %) > > > > depositions without leaving any Zn in the system after their runs. > > > > > > > > Thanks, Jim > > > > > > > > On Tue, 13 Apr 2004, Jeannie Perez wrote: > > > > > > > > > > > > > > Hi Jim, > > > > > I've not been notified that Zn has been approved by the SpecMat > > > > > committee to be use in the Metalica or Innotec. Is this a one time deal? > > > > > Is this an OK for both system? Could you give me some details. melting > > > > > point below In. > > > > > -- > > > > > Jeannie Perez > > > > > Stanford Nanofabrication Facility > > > > > CIS Room 146, Mail Code 4070 > > > > > Stanford, CA 94305 > > > > > (650) 723-7997 > > > > > jperez at snf.stanford.edu > > > > > > > > > > > > > > > > > > -- > > > > -------------------------------------------------------------- > > > > Jim McVittie, Ph.D. Senior Research Scientist > > > > Allen Center for Integrated Systems Electrical Engineering > > > > Stanford University jmcvittie at stanford.edu > > > > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > > > > Stanford, CA 94305-4075 Tel: (650) 725-3640 > > > > > > -- > > > Mary X. Tang, Ph.D. > > > Stanford Nanofabrication Facility > > > CIS Room 136, Mail Code 4070 > > > Stanford, CA 94305 > > > (650)723-9980 > > > mtang at stanford.edu > > > http://snf.stanford.edu > > > > > > > > > > > > > -- > > -------------------------------------------------------------- > > Jim McVittie, Ph.D. Senior Research Scientist > > Allen Center for Integrated Systems Electrical Engineering > > Stanford University jmcvittie at stanford.edu > > Rm. 336, 330 Serra Mall Fax: (650) 723-4659 > > Stanford, CA 94305-4075 Tel: (650) 725-3640 > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu -- Jeannie Perez Stanford Nanofabrication Facility CIS Room 146, Mail Code 4070 Stanford, CA 94305 (650) 723-7997 jperez at snf.stanford.edu From mahnaz at snf.stanford.edu Thu Apr 15 15:04:18 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Thu, 15 Apr 2004 15:04:18 -0700 Subject: [Fwd: Forming Gas] Message-ID: <407F06E2.FCE1CFDB@snf.stanford.edu> I did talk to Tony and next week when Chad from EVG is here we can talk about it more. Tony tells me that, this is the set up in EVG's office in Phoenix. I will have more info coming your way next week. i am very open to the idea as it might open new capabilities. mahnaz -------------- next part -------------- An embedded message was scrubbed... From: "Anthony Flannery" Subject: RE: Forming Gas Date: Thu, 15 Apr 2004 14:30:37 -0700 Size: 11009 URL: From MGlazer at cellbiosciences.com Thu Apr 15 16:19:30 2004 From: MGlazer at cellbiosciences.com (MGlazer at cellbiosciences.com) Date: Thu, 15 Apr 2004 16:19:30 -0700 Subject: request to bring new materials into the lab Message-ID: Dear SpecMat, My name is Marc Glazer (username mglazer). I am working at Cell Biosciences, and have been doing some processing at SNF under the guidance of Mary Tang. We would like to use a process to silanate our glass wafers. This exact process was actually used at SNF several years ago by a consultant with whom we are working. Attached is a document with all of the relevant information about each chemical, the MSDS of each chemical, and a description of the process flow. Please let me know how I can help with the approval process, and if I can provide any additional information. Thank you for your time in considering this. 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Name: aptes.pdf Type: application/octet-stream Size: 60166 bytes Desc: not available URL: From jperez at snf.stanford.edu Mon Apr 19 08:29:47 2004 From: jperez at snf.stanford.edu (Jeannie Perez) Date: Mon, 19 Apr 2004 08:29:47 -0700 Subject: Gold at 99.99% purity vs 99.999% Message-ID: <4083F06B.78C957A2@snf.stanford.edu> Hi, I need to order a whole Au source for the Innotec, so if you would please reply ASAP. What percentage of purities do we need to meet for our customers at SNF. I've hear that 99.99% would work here at SNF. I've only ordered 99.999% in the pass. Here are the two quotes that I've received. Please give me your imput. Vendor 99.99% 99.999% Delta ACI Alloys $2472. $2699 $227 delivery three weeks PLasmaterials $3275 $3560 $285 delivery 10 days Thanks, Jeannie Perez Stanford Nanofabrication Facility CIS Room 146, Mail Code 4070 Stanford, CA 94305 (650) 723-7997 jperez at snf.stanford.edu From hatogai at stanford.edu Sat Apr 24 01:05:24 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Sat, 24 Apr 2004 01:05:24 -0700 Subject: New Material registering request [MB300] Message-ID: <000001c429d2$e93397c0$6500a8c0@toshibauser> Special Materials Committee: Here is the application for new material, MB300. Mainly we are going to use these materials in "Drytek1", "P5000" and "semhitachi". I attached the scanned MSDS for the material. Here is the information for the material required by following website. http://snf.stanford.edu/Materials/NewMatProc.html 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. Email address: hatogai at stanford.edu 4. Requestors PI: Professor R. Fabian W. Pease 5. Name of new chemical: MB300 6. No other materials 7. Name of vendor: Master Bond Inc. 8. http://www.masterbond.com 9. 154 Hobart Street Hackensack, New Jersey 07601 10. We would like to find materials that suit well to fabricate small structures 11. Find other material that is comparable with MB300. 12. Drytek1, semhitachi 13. 100ml 14. Liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. It can be disposed as usual trash. 21. Process Flow: Detail is shown in attached file. Spin-coat on a silicon wafer and bond a thin film that has small structures on it. (Spincoat will be made using spin coater that our group owns in Packard 076) Sincerely, Tetsuhiro Hatogai (Hiro) -------------- next part -------------- A non-text attachment was scrubbed... Name: MB300 MSDS p2.JPG Type: image/jpeg Size: 130460 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: MB300 MSDS p1.JPG Type: image/jpeg Size: 105497 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow Al.ppt Type: application/vnd.ms-powerpoint Size: 56832 bytes Desc: not available URL: From hatogai at stanford.edu Sat Apr 24 01:05:31 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Sat, 24 Apr 2004 01:05:31 -0700 Subject: New Material registering request [Lens Bond Type SK-9] Message-ID: <000401c429d2$ec9a9080$6500a8c0@toshibauser> Special Materials Committee: Thanks for the permission for using adhesive materials (SK-9) on "Drytek1" and "semhitachi" Now, we are going to use this adhesive materials (SK-9) on "Amtetcher"( AMT 8100 Plasma Etcher), Drytek1, and . What we are thinking about is to make SK-9 structures on top of thin SiO2 layer which is 200nm and using SK-9 structures as etch mask. SK-9 will be used as adhesive shown in the attached file as well. Could you give us permission for using SK-9 on Amtecher? If you need further explanation, please let me know. I am happy to visit you for more explanation. Sincerely, Tetsuhiro Hatogai (Hiro) -----Original Message----- From: Tetsuhiro (Hiro) Hatogai [mailto:hatogai at stanford.edu] Sent: Thursday, April 08, 2004 8:12 PM To: 'specmat at snf.stanford.edu' Cc: 'Charles D Schaper'; 'Fabian Pease' Subject: RE: New Material registering request [Lens Bond Type SK-9] Special Materials Committee: Thanks for the permission for using adhesive materials (SK-9) on "Drytek1" and "semhitachi" Now, we are going to use this adhesive materials (SK-9) on "Amtetcher"( AMT 8100 Plasma Etcher). What we are thinking about is to make SK-9 structures on top of thin SiO2 layer which is 200nm and using SK-9 structures as etch mask. Could you give us permission for using SK-9 on Amtecher? Sincerely, Tetsuhiro Hatogai (Hiro) -----Original Message----- From: Tetsuhiro (Hiro) Hatogai [mailto:hatogai at stanford.edu] Sent: Wednesday, March 03, 2004 11:23 PM To: 'specmat at snf.stanford.edu' Cc: 'pease at cis.Stanford.EDU'; 'Charles D Schaper' Subject: New Material registering request [Lens Bond Type SK-9] Special Materials Committee: We are going to evaluate several adhesive materials which are similar to Zipcone that we already have permission. Mainly we are going to use these materials in "Drytek1" and "semhitachi". Here is the application for new material, SK-9. I attached the MSDS for the material. Here is the information for the material required by following website. http://snf.stanford.edu/Materials/NewMatProc.html 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. Email address: hatogai at stanford.edu 4. Requestors PI: Professor R. Fabian W. Pease 5. Name of new chemical: Lens Bond Type SK-9 6. No other materials 7. Name of vendor: Summers Optical, A Division of EMS Acquisition 8. http://www.emsdiasum.com/default.htm 9. 1560 Industry Road - P O Box 380 - Hatfield, PA 19440 10. We would like to find materials that suit well to fabricate small structures 11. Find other material that is comparable with SK-9. 12. Drytek1, semhitachi 13. 1 oz. 14. Liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. It can be disposed as usual trash. 21. Process Flow: (1) Spin-coat PVA on a silicon wafer that has small structure on it using spin coater that our group owns in Packard 076 (2) Detach dried PVA film from silicon wafer, (3) Spin-coat SK-9 on the side that has structures on it of dried PVA film (4) Etch back SK-9 to reduce the thickness of residual layer using drytek1 (5) Observe the structures and measure the residual layer thickness using semhitachi Sincerely, Tetsuhiro Hatogai (Hiro) -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow SiO2.ppt Type: application/vnd.ms-powerpoint Size: 49664 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SK-9 MSDS.pdf Type: application/pdf Size: 16449 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow Al.ppt Type: application/vnd.ms-powerpoint Size: 56832 bytes Desc: not available URL: From mtang at snf.stanford.edu Sun Apr 25 15:27:14 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Sun, 25 Apr 2004 15:27:14 -0700 Subject: [Fwd: New Material registering request [Lens Bond Type SK-9]] Message-ID: <408C3B42.5B81D7D3@snf.stanford.edu> Hi all -- I think this is a question for Jim... How clean is the amtetcher? Because it looks like this and Tetsuhiro's other request are for materials that are not specifically electronics-grade clean. (However, they both appear to be fairly conventional acrylics, so functionally no different from PMMA.) Is this a concern? Mary -------- Original Message -------- Subject: New Material registering request [Lens Bond Type SK-9] Date: Sat, 24 Apr 2004 01:05:31 -0700 From: "Tetsuhiro \(Hiro\) Hatogai" Reply-To: To: CC: "'Charles D Schaper'" ,"'Fabian Pease'" Special Materials Committee: Thanks for the permission for using adhesive materials (SK-9) on "Drytek1" and "semhitachi" Now, we are going to use this adhesive materials (SK-9) on "Amtetcher"( AMT 8100 Plasma Etcher), Drytek1, and . What we are thinking about is to make SK-9 structures on top of thin SiO2 layer which is 200nm and using SK-9 structures as etch mask. SK-9 will be used as adhesive shown in the attached file as well. Could you give us permission for using SK-9 on Amtecher? If you need further explanation, please let me know. I am happy to visit you for more explanation. Sincerely, Tetsuhiro Hatogai (Hiro) -----Original Message----- From: Tetsuhiro (Hiro) Hatogai [mailto:hatogai at stanford.edu] Sent: Thursday, April 08, 2004 8:12 PM To: 'specmat at snf.stanford.edu' Cc: 'Charles D Schaper'; 'Fabian Pease' Subject: RE: New Material registering request [Lens Bond Type SK-9] Special Materials Committee: Thanks for the permission for using adhesive materials (SK-9) on "Drytek1" and "semhitachi" Now, we are going to use this adhesive materials (SK-9) on "Amtetcher"( AMT 8100 Plasma Etcher). What we are thinking about is to make SK-9 structures on top of thin SiO2 layer which is 200nm and using SK-9 structures as etch mask. Could you give us permission for using SK-9 on Amtecher? Sincerely, Tetsuhiro Hatogai (Hiro) -----Original Message----- From: Tetsuhiro (Hiro) Hatogai [mailto:hatogai at stanford.edu] Sent: Wednesday, March 03, 2004 11:23 PM To: 'specmat at snf.stanford.edu' Cc: 'pease at cis.Stanford.EDU'; 'Charles D Schaper' Subject: New Material registering request [Lens Bond Type SK-9] Special Materials Committee: We are going to evaluate several adhesive materials which are similar to Zipcone that we already have permission. Mainly we are going to use these materials in "Drytek1" and "semhitachi". Here is the application for new material, SK-9. I attached the MSDS for the material. Here is the information for the material required by following website. http://snf.stanford.edu/Materials/NewMatProc.html 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. Email address: hatogai at stanford.edu 4. Requestors PI: Professor R. Fabian W. Pease 5. Name of new chemical: Lens Bond Type SK-9 6. No other materials 7. Name of vendor: Summers Optical, A Division of EMS Acquisition 8. http://www.emsdiasum.com/default.htm 9. 1560 Industry Road - P O Box 380 - Hatfield, PA 19440 10. We would like to find materials that suit well to fabricate small structures 11. Find other material that is comparable with SK-9. 12. Drytek1, semhitachi 13. 1 oz. 14. Liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. It can be disposed as usual trash. 21. Process Flow: (1) Spin-coat PVA on a silicon wafer that has small structure on it using spin coater that our group owns in Packard 076 (2) Detach dried PVA film from silicon wafer, (3) Spin-coat SK-9 on the side that has structures on it of dried PVA film (4) Etch back SK-9 to reduce the thickness of residual layer using drytek1 (5) Observe the structures and measure the residual layer thickness using semhitachi Sincerely, Tetsuhiro Hatogai (Hiro) -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow SiO2.ppt Type: application/vnd.ms-powerpoint Size: 49664 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: SK-9 MSDS.pdf Type: application/pdf Size: 16449 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow Al.ppt Type: application/vnd.ms-powerpoint Size: 56832 bytes Desc: not available URL: From mcvittie at snf.stanford.edu Mon Apr 26 20:36:30 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 26 Apr 2004 20:36:30 -0700 Subject: New Material registering request [MB300] References: <000001c429d2$e93397c0$6500a8c0@toshibauser> Message-ID: <408DD53E.5A269F58@snf.stanford.edu> Hiro, Drytek1 is a gold contaminated etcher while the P5000 is a clean tool. You either need to switch your Drytek1 process to a clean etcher or switch your P5000 to a "dirty" etcher. Please tell me what you what to do in Drytek1 and in the P5000, so I can advise you on a solution. Thanks, Jim "Tetsuhiro (Hiro) Hatogai" wrote: > Special Materials Committee: > > Here is the application for new material, MB300. > Mainly we are going to use these materials in "Drytek1", "P5000" and > "semhitachi". I attached the scanned MSDS for the material. > > Here is the information for the material required by following website. > http://snf.stanford.edu/Materials/NewMatProc.html > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. Email address: hatogai at stanford.edu > 4. Requestors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: MB300 > 6. No other materials > 7. Name of vendor: Master Bond Inc. > 8. http://www.masterbond.com > 9. 154 Hobart Street Hackensack, New Jersey 07601 > 10. We would like to find materials that suit well to fabricate small > structures > 11. Find other material that is comparable with MB300. > 12. Drytek1, semhitachi > 13. 100ml > 14. Liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. It can be disposed as usual trash. > 21. Process Flow: Detail is shown in attached file. > Spin-coat on a silicon wafer and bond a thin film that has small > structures on it. > (Spincoat will be made using spin coater that our group owns in > Packard 076) > > Sincerely, > Tetsuhiro Hatogai (Hiro) > > ------------------------------------------------------------------------ > Name: MB300 MSDS p2.JPG > MB300 MSDS p2.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: MB300 MSDS p1.JPG > MB300 MSDS p1.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: Process flow Al.ppt > Process flow Al.ppt Type: Microsoft PowerPoint Show (application/vnd.ms-powerpoint) > Encoding: base64 > Download Status: Not downloaded with message -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From hatogai at stanford.edu Tue Apr 27 02:37:13 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Tue, 27 Apr 2004 02:37:13 -0700 Subject: New Material registering request [MB300] In-Reply-To: <408DD53E.5A269F58@snf.stanford.edu> Message-ID: <000001c42c3b$3c02de10$6400a8c0@toshibauser> Dear Jim McVittie, Thanks for the reply and I really appreciate your offering advice to us. Here is the brief explanation of our process. First we use Drytek1 (Recipe: Resistsstrip) to reduce the thickness of the residual layer of the pattern (made of SK-9: silicone contained UV curable material) to be printed by back etching. Then we place the pattern on top of Aluminum or Oxide layer using very thin (about 0.5-3um) adhesive (MB300 or use SK-9 again) layer. These patterns are used as an etching mask for patterning (i) Aluminum or (ii) Oxide layer. (i) For Patterning Aluminum layer (20nm in thickness), we are thinking about using AMT 8100 Plasma Etcher (amtetcher). Another way for patterning Aluminum is using wet etcher (wbmetal). Just before using wbmetal, Wafer is gone through Drytek2 (Ultra Plasma) to attract etchant effectively. (ii) For Patterning Oxide, we are thinking about using Applied Materials Precision 5000 Etcher: p5000etch. Finally, fabricated structures are observed using hitachisem. For more detail, please see attached files. I added the size such as film thickness to the process flow I sent before. Although we are using Drytek1 for thinning the residual layer, we are going to use Drytek2 instead of Drytek1 to avoid sample contaminations after the approval. I heard you are very busy these days. But if you have a time to meet, please let me know. I am happy to drop you by and explain our process more and have your advice. Thank you, Hiro -----Original Message----- From: Jim McVittie [mailto:mcvittie at snf.stanford.edu] Sent: Monday, April 26, 2004 8:37 PM To: hatogai at stanford.edu Cc: specmat at snf.stanford.edu; 'Charles D Schaper'; 'R. Fabian W. Pease' Subject: Re: New Material registering request [MB300] Hiro, Drytek1 is a gold contaminated etcher while the P5000 is a clean tool. You either need to switch your Drytek1 process to a clean etcher or switch your P5000 to a "dirty" etcher. Please tell me what you what to do in Drytek1 and in the P5000, so I can advise you on a solution. Thanks, Jim "Tetsuhiro (Hiro) Hatogai" wrote: > Special Materials Committee: > > Here is the application for new material, MB300. > Mainly we are going to use these materials in "Drytek1", "P5000" and > "semhitachi". I attached the scanned MSDS for the material. > > Here is the information for the material required by following website. > http://snf.stanford.edu/Materials/NewMatProc.html > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. Email address: hatogai at stanford.edu > 4. Requestors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: MB300 > 6. No other materials > 7. Name of vendor: Master Bond Inc. > 8. http://www.masterbond.com > 9. 154 Hobart Street Hackensack, New Jersey 07601 > 10. We would like to find materials that suit well to fabricate small > structures > 11. Find other material that is comparable with MB300. > 12. Drytek1, semhitachi > 13. 100ml > 14. Liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. It can be disposed as usual trash. > 21. Process Flow: Detail is shown in attached file. > Spin-coat on a silicon wafer and bond a thin film that has small > structures on it. > (Spincoat will be made using spin coater that our group owns in > Packard 076) > > Sincerely, > Tetsuhiro Hatogai (Hiro) > > ------------------------------------------------------------------------ > Name: MB300 MSDS p2.JPG > MB300 MSDS p2.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: MB300 MSDS p1.JPG > MB300 MSDS p1.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: Process flow Al.ppt > Process flow Al.ppt Type: Microsoft PowerPoint Show (application/vnd.ms-powerpoint) > Encoding: base64 > Download Status: Not downloaded with message -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow Al.ppt Type: application/vnd.ms-powerpoint Size: 60928 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Process flow SiO2.ppt Type: application/vnd.ms-powerpoint Size: 54272 bytes Desc: not available URL: From mtang at snf.stanford.edu Tue Apr 27 07:27:51 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 27 Apr 2004 07:27:51 -0700 Subject: New Material registering request [MB300] References: <000001c42c3b$3c02de10$6400a8c0@toshibauser> Message-ID: <408E6DE7.C4958BA1@snf.stanford.edu> Hi Jim -- My two cents... The materials Hiro is using are either silicone polymer or PMMA-like. The silicone polymers are electronic grade for resist-like applications, so I presume there are few metal contaminants (although I do believe that the catalyst is some sort of heavy metal ion, but present in very low concentrations.) The acrylates, however, are not electronics grade (they are made for the electronics industry, but as potting or packaging materials) so I've no idea about their cleanliness -- however, acrylates are not inherently metal contaminated, so this may not be a problem. I believe silicone polymers were approved a long time ago for use on drytek1 and drytek4 and mrc, but don't know if they have been approved for any clean etchers (certainly not in recent months). I wouldn't think that either the silicone or acrylate polymers would inherently contaminate or damage etchers, but don't know if any metal contaminants they may contain would be an issue for the clean etchers. Mary "Tetsuhiro (Hiro) Hatogai" wrote: > Dear Jim McVittie, > > Thanks for the reply and I really appreciate your offering advice to us. > > Here is the brief explanation of our process. > > First we use Drytek1 (Recipe: Resistsstrip) to reduce the thickness of > the residual layer of the pattern (made of SK-9: silicone contained UV > curable material) to be printed by back etching. > > Then we place the pattern on top of Aluminum or Oxide layer using very > thin (about 0.5-3um) adhesive (MB300 or use SK-9 again) layer. These > patterns are used as an etching mask for patterning (i) Aluminum or (ii) > Oxide layer. > > (i) For Patterning Aluminum layer (20nm in thickness), we are thinking > about using AMT 8100 Plasma Etcher (amtetcher). Another way for > patterning Aluminum is using wet etcher (wbmetal). Just before using > wbmetal, Wafer is gone through Drytek2 (Ultra Plasma) to attract etchant > effectively. > (ii) For Patterning Oxide, we are thinking about using Applied Materials > Precision 5000 Etcher: p5000etch. > > Finally, fabricated structures are observed using hitachisem. > > For more detail, please see attached files. I added the size such as > film thickness to the process flow I sent before. > > Although we are using Drytek1 for thinning the residual layer, we are > going to use Drytek2 instead of Drytek1 to avoid sample contaminations > after the approval. > > I heard you are very busy these days. But if you have a time to meet, > please let me know. I am happy to drop you by and explain our process > more and have your advice. > > Thank you, > Hiro > > -----Original Message----- > From: Jim McVittie [mailto:mcvittie at snf.stanford.edu] > Sent: Monday, April 26, 2004 8:37 PM > To: hatogai at stanford.edu > Cc: specmat at snf.stanford.edu; 'Charles D Schaper'; 'R. Fabian W. Pease' > Subject: Re: New Material registering request [MB300] > > Hiro, > > Drytek1 is a gold contaminated etcher while the P5000 is a clean tool. > You either need to switch > your Drytek1 process to a clean etcher or switch your P5000 to a > "dirty" etcher. Please tell me > what you what to do in Drytek1 and in the P5000, so I can advise you on > a solution. > > Thanks, Jim > > "Tetsuhiro (Hiro) Hatogai" wrote: > > > Special Materials Committee: > > > > Here is the application for new material, MB300. > > Mainly we are going to use these materials in "Drytek1", "P5000" and > > "semhitachi". I attached the scanned MSDS for the material. > > > > Here is the information for the material required by following > website. > > http://snf.stanford.edu/Materials/NewMatProc.html > > > > 1. Requestor name: Tetsuhiro Hatogai > > 2. Phone number: 650-799-5366 > > 3. Email address: hatogai at stanford.edu > > 4. Requestors PI: Professor R. Fabian W. Pease > > 5. Name of new chemical: MB300 > > 6. No other materials > > 7. Name of vendor: Master Bond Inc. > > 8. http://www.masterbond.com > > 9. 154 Hobart Street Hackensack, New Jersey 07601 > > 10. We would like to find materials that suit well to fabricate small > > structures > > 11. Find other material that is comparable with MB300. > > 12. Drytek1, semhitachi > > 13. 100ml > > 14. Liquid > > 15. No chemical is needed to mix it > > 16. Please see attached > > 17. Will not be used in the clean area > > 18. Storage group identifier = L, Main Hazard Class = 6 > > 19. Should be enough room > > 20. It can be disposed as usual trash. > > 21. Process Flow: Detail is shown in attached file. > > Spin-coat on a silicon wafer and bond a thin film that has small > > structures on it. > > (Spincoat will be made using spin coater that our group owns in > > Packard 076) > > > > Sincerely, > > Tetsuhiro Hatogai (Hiro) > > > > > ------------------------------------------------------------------------ > > Name: MB300 MSDS p2.JPG > > MB300 MSDS p2.JPG Type: JPEG Image (image/jpeg) > > Encoding: base64 > > > > Name: MB300 MSDS p1.JPG > > MB300 MSDS p1.JPG Type: JPEG Image (image/jpeg) > > Encoding: base64 > > > > Name: Process flow Al.ppt > > Process flow Al.ppt Type: Microsoft PowerPoint Show > (application/vnd.ms-powerpoint) > > Encoding: base64 > > Download Status: Not downloaded with message > > ------------------------------------------------------------------------ > Name: Process flow Al.ppt > Process flow Al.ppt Type: Microsoft PowerPoint Show (application/vnd.ms-powerpoint) > Encoding: base64 > Download Status: Not downloaded with message > > Name: Process flow SiO2.ppt > Process flow SiO2.ppt Type: Microsoft PowerPoint Show (application/vnd.ms-powerpoint) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From diplodoc at ee.ucla.edu Wed Apr 28 12:45:42 2004 From: diplodoc at ee.ucla.edu (Yu-Lin Chao) Date: Wed, 28 Apr 2004 12:45:42 -0700 (PDT) Subject: Germanium on RTP Message-ID: Hi! Dear Help, I am planning on going to SNF for GeON formation next week, but just heard that Ge now is prohibited from running in RTP chambers. However, I need to use RTP for oxidation and nitridation processes, and they suggest me sending email to this committee. What's your suugestion then? Thank you. Regards, Yu-Lin Chao From mtang at snf.stanford.edu Wed Apr 28 13:13:23 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 28 Apr 2004 13:13:23 -0700 Subject: Germanium on RTP References: Message-ID: <40901063.27D87EB2@snf.stanford.edu> Hi Yu-Lin -- Jim McVittie held a meeting with users and staff members yesterday to discuss this. I understand that he will be sending out a note soon, detailing the procedures by which GeON may be safety processed on the RTP. Mary Yu-Lin Chao wrote: > Hi! Dear Help, > > I am planning on going to SNF for GeON formation next week, but just heard > that Ge now is prohibited from running in RTP chambers. > However, I need to use RTP for oxidation and nitridation processes, and > they suggest me sending email to this committee. > What's your suugestion then? > > Thank you. > > Regards, > Yu-Lin Chao -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From MGlazer at cellbiosciences.com Wed Apr 28 15:44:17 2004 From: MGlazer at cellbiosciences.com (MGlazer at cellbiosciences.com) Date: Wed, 28 Apr 2004 15:44:17 -0700 Subject: request to bring new materials into the lab In-Reply-To: Message-ID: Dear SpecMat, I wanted to check and see if there has been any consideration of these new materials. Please let me know if I can answer any questions, or how I can help with the process. Sincerely, Marc Glazer Marc Glazer/CELLBIOSCIENCES 04/15/2004 04:19 PM To specmat at snf.stanford.edu cc mtang at snf.stanford.edu Subject request to bring new materials into the lab Dear SpecMat, My name is Marc Glazer (username mglazer). I am working at Cell Biosciences, and have been doing some processing at SNF under the guidance of Mary Tang. We would like to use a process to silanate our glass wafers. This exact process was actually used at SNF several years ago by a consultant with whom we are working. Attached is a document with all of the relevant information about each chemical, the MSDS of each chemical, and a description of the process flow. Please let me know how I can help with the approval process, and if I can provide any additional information. Thank you for your time in considering this. Sincerely, Marc Glazer -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: succinic anhydride.pdf Type: application/octet-stream Size: 56682 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: diea.pdf Type: application/octet-stream Size: 60836 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: dmf.pdf Type: application/octet-stream Size: 113632 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: New materials request form - Marc Glazer.doc Type: application/octet-stream Size: 58368 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: aptes.pdf Type: application/octet-stream Size: 60166 bytes Desc: not available URL: From mtang at snf.stanford.edu Thu Apr 29 08:07:58 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 29 Apr 2004 08:07:58 -0700 Subject: request to bring new materials into the lab References: Message-ID: <40911A4E.1FD8E109@snf.stanford.edu> Sorry Marc -- I meant to get back to you... Your request is a bit unusual, because as far as I know, people don't do silanization on this scale in our lab. Usually, researchers have their own labs with better means for handling larger volumes of solvent than we do. I don't know how many wafers you intend to do at once, but a cassette usually means a liter at a time. 1. You ask to use the spin rinse dryer after two solvent processes in your process flow. The first one, I'm a bit concerned about. IPA doesn't do anything to the spin rinse dryer (SRD), but any possible residual APTES could be very bad (I'm assuming you are proposing to use the SRD in litho, since it is gold-compatible, but APTES contamination could change the surface properties of subsequent wafers processed there.) The second one isn't good either, in that DMF is a fantastic solvent and may dissolve or penetrate any seals or plastic exposed in the SRD. I would suggest rinsing the wafers with a lot of water (at wbgeneral, using a hand spray) and then using the dump rinser in litho, before using the SRD. I don't know if exposure to water is going to be a problem for your particular process, but the SRD sprays with lots of water before going into the dry cycle, so I would think that the additional rinses should be no more of a process issue. 2. No powders are allowed in the lab. This is because powders have a tendency to go everywhere, especially when handled in high velocity hoods, and result in particulate defects on other people's material. So, any solution from powder must be mixed outside the lab. This can be done in the solvent or acid hoods in the wafersaw room. You can bring a concentrated solution made up outside, into the lab and dilute up to meet your processing needs. 3. Since you are plan to deal with fairly large volumes of solvent that are not typically used in the lab, you should plan to collect your solvent locally (obtain clean, defaced containers from the service area and attach and properly label a hazardous waste tag, according to wbsolvent procedures.) I don't think DMF should be collected in the plastic containers provided -- you will need to provide your own glass container. 4. I'm afraid that we also don't have a lot of solvent storage space, and it looks like you have a large volume of DMF. I would suggest that you obtain a smaller bottle, or plan to store the DMF only for a short time (even two smaller bottles would be easier to store). Please obtain the appropriate labels from Mahnaz -- even though your bottles will likely already have the appropriate label, we need to keep track of who this belongs to. 5. I would strongly suggest you get your own wafer cassettes. Silanization can be poisoned by chemical contaminants, and there's no telling what our teflon boats have undergone. Also, the teflon boats are generally not used for solvent processing, so your process may actually end up contaminating them (teflon sucks up solvents, and DMF is a very good solvent.) Finally, I would suggest that if you have any fume hood resources in your own lab, that it might be better to do this processing there. As you can see, we aren't really geared up to handle the 1 liter volumes you are likely to use -- the station is not very ergonomic and a lot of manual handling is required. If you do decide to do this at SNF, please get in touch with me or Uli to go over the logistics of handling large volumes at this station. Thanks, Mary MGlazer at cellbiosciences.com wrote: > > Dear SpecMat, > > I wanted to check and see if there has been any consideration of these > new materials. Please let me know if I can answer any questions, or > how I can help with the process. > > Sincerely, > > Marc Glazer > > > > Marc Glazer/CELLBIOSCIENCES To specmat at snf.stanford.edu 04/15/2004 04:19 PM cc mtang at snf.stanford.edu Subject request to bring new materials into the lab > > Dear SpecMat, > > My name is Marc Glazer (username mglazer). I am working at Cell > Biosciences, and have been doing some processing at SNF under the > guidance of Mary Tang. We would like to use a process to silanate our > glass wafers. This exact process was actually used at SNF several > years ago by a consultant with whom we are working. Attached is a > document with all of the relevant information about each chemical, the > MSDS of each chemical, and a description of the process flow. Please > let me know how I can help with the approval process, and if I can > provide any additional information. Thank you for your time in > considering this. > > Sincerely, Marc Glazer > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: