Laser Annealing Experiment

Jim McVittie mcvittie at
Wed Apr 14 14:38:01 PDT 2004


1.Can I get more info on Seaway Semiconductor? I would like to know how
they are depositing their a-Si and what applications their films are
serving. In the past, when the optics people have given me thick PECVD
oxide films deposited on the outside, I found that they were loaded with
metals. There was a problem about allowing their films into the clean
etchers.  Such metals in your film would affect your CVs.

2. What are the properties are you looking for in your a-Si?   Normal
PECVD a-Si is loaded with H. It can be over 20%.   There is a doped Si
target for the Balzers, which can be used to sputter deposit a-Si.

3. With some process development, we could deposition a-Si in the STS
dep tool but it would have a lot of N in it besides H and would have a
very high HF etch rate. I am not recommending such a film for your


Bipin Rajendran wrote:

> Dear SpecMat Committee Members,
> I wanted to seek your permission/suggestions to do some Laser
> Annealing Experiments on Si wafers for 3D Integration Project, I am
> working on with Prof Fabian Pease.
>  <?xml:namespace prefix = o ns =
> "urn:schemas-microsoft-com:office:office" />
> Prof Byer’s lab in Ginztopn has a high power, ultra-fast laser source
> (1064nm) which I want to use for doing laser annealing on my
> wafers.The steps I am thinking of doing are outlined below:
>   1. Run a standard MOS Capacitor process, with Al gate, on 4’ Si
>      wafers.
>   2. Deposit a layer of LTO on the wafer. (This can be done on
>      tylanbpsg)
>   3. I want to deposit a 0.1-0.2mm thick amorphous silicon layer on
>      top of this LTO. Since there is no PECVD tube where this can be
>      done, I am planning to send my wafers to a company called Seaway
>      Semiconductors that does this.
>   4. I want to then deposit a thin layer of Ti above this Si layer.
>      (Can this be done at SNF?)
>   5. Once I have done these steps, I want to take my wafers out to
>      Prof. Byer’s lab and expose the wafer to the high-energy pulses.
>      They just have a laser source, so I should build my own wafer
>      holders (probably enclosed in a box, with a glass window). I can
>      pump Nitrogen into this box. If the annealing is done in that
>      ambient, Can I bring my wafers back to SNF to etch the deposited
>      LTO, amorphous-Si and Ti layers.
>   6. The aim of this experiment is to see how much the C-V of the
>      first layer Capacitors are affected by the laser annealing
>      process.
> Any suggestions would be appreciated.
> Thanks
> Bipin
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