Laser Annealing Experiment
mcvittie at snf.stanford.edu
Wed Apr 14 14:38:01 PDT 2004
1.Can I get more info on Seaway Semiconductor? I would like to know how
they are depositing their a-Si and what applications their films are
serving. In the past, when the optics people have given me thick PECVD
oxide films deposited on the outside, I found that they were loaded with
metals. There was a problem about allowing their films into the clean
etchers. Such metals in your film would affect your CVs.
2. What are the properties are you looking for in your a-Si? Normal
PECVD a-Si is loaded with H. It can be over 20%. There is a doped Si
target for the Balzers, which can be used to sputter deposit a-Si.
3. With some process development, we could deposition a-Si in the STS
dep tool but it would have a lot of N in it besides H and would have a
very high HF etch rate. I am not recommending such a film for your
Bipin Rajendran wrote:
> Dear SpecMat Committee Members,
> I wanted to seek your permission/suggestions to do some Laser
> Annealing Experiments on Si wafers for 3D Integration Project, I am
> working on with Prof Fabian Pease.
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> "urn:schemas-microsoft-com:office:office" />
> Prof Byers lab in Ginztopn has a high power, ultra-fast laser source
> (1064nm) which I want to use for doing laser annealing on my
> wafers.The steps I am thinking of doing are outlined below:
> 1. Run a standard MOS Capacitor process, with Al gate, on 4 Si
> 2. Deposit a layer of LTO on the wafer. (This can be done on
> 3. I want to deposit a 0.1-0.2mm thick amorphous silicon layer on
> top of this LTO. Since there is no PECVD tube where this can be
> done, I am planning to send my wafers to a company called Seaway
> Semiconductors that does this.
> 4. I want to then deposit a thin layer of Ti above this Si layer.
> (Can this be done at SNF?)
> 5. Once I have done these steps, I want to take my wafers out to
> Prof. Byers lab and expose the wafer to the high-energy pulses.
> They just have a laser source, so I should build my own wafer
> holders (probably enclosed in a box, with a glass window). I can
> pump Nitrogen into this box. If the annealing is done in that
> ambient, Can I bring my wafers back to SNF to etch the deposited
> LTO, amorphous-Si and Ti layers.
> 6. The aim of this experiment is to see how much the C-V of the
> first layer Capacitors are affected by the laser annealing
> Any suggestions would be appreciated.
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