Boron drive in question
mtang at snf.stanford.edu
Tue Dec 14 06:59:18 PST 2004
Hi Nancy --
Ed, Erhan, and I had a chat about this on Friday.... Just from a
contamination standpoint, I think we're concerned that heavily doped
boron wafers would outgas and contaminate tylans 1 and 2. Preferably,
the pre-dep furnace itself would be a better place to do the drive, if
the time/temp are acceptable.
It's also seems that Erhan is trying several different things and is not
certain this is what he wants to do -- he basically wants a boron stop
for KOH etching and there are a couple of different ways he can do
this. His criterion is a process that will eventually be compatible
with a CMOS fab, since they (General MEMS) hope to transfer their
processes to such a lab. It would seem that the criterion that we
impose on allowing processes in our lab might be a good natural "test"
So, in short, do you think the pre-dep furnace could do a 24 hour, 1100
C drive-in on an occasional basis without damaging the tube or other
processes that are run there?
Nancy Latta wrote:
> Specmat Folks,
> I have a request from a student to drive-in boron, after a pre-dep, to
> 5um. By his calculation, this should take about 24 hrs at 1100C. He
> has proposed using tylan1 or 2 or the pre-dep furnace itself.
> Do you have any thoughts on other options?
> With the Dec shutdown coming up, a timely answer would be appreciated.
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
mtang at stanford.edu
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