[Fwd: RE: ZnSe Processing]

[Mary Tang]

Hi all --

Add this to the SpecMat agenda for Jan.?

Mary

-------- Original Message --------
Subject: 	RE: ZnSe Processing
Date: 	Tue, 14 Dec 2004 23:10:51 +0100
From: 	Stephan Goetzinger <Stephan.goetzinger at stanford.edu>
To: 	'Mary Tang' <mtang at snf.stanford.edu>



Hi Mary,

I will simply follow the list and give you the information as far as I know
it.
1: Stephan Goetzinger
2: 723-3003
3: goetzi at stanford.edu
4: Prof. Yamamoto
5: Zinc-Selenide and Zinc-Cadmium-Selenide (quantum wells)
6: I don´t know, but I do not think so.
7: Group of Prof. Lischka at University of Paderborn (Germany) (We have a
collaboration with them)
8: there is none (you can ask James Conway, he worked a lot with that
material)
9: Universität Paderborn
   Fakultät für Naturwissenschaften 
   Department Physik 
   Warburger Straße 100 
   33098 Paderborn
   Germany
   Phone:    +49 (0) 5251 60-3565 
   Fax:        +49 (0) 5251 60-3490 
   E-mail:    lischka. at upb.de 
10: I want to process some microcavities (photonic crytsal or microdisc) for
Exciton-Polariton experiments.
    The high-quality of the cavities is essentiell for the success of that
project. 
11: ZnSe is a new system for these kind of experiments which allows not room
temperature experments but also promises
    to enter a new regime which cannot be reached for example by GaAs.
12: That´s not totally clear. It will depend on some first tries. Probably I
will need the solvent bench and the
    GaAs wetbench. Also a spincoater, some kind of lithography
(photolithography or Raith) and an etcher (PQUEST?)
13: a 2 inch waver with a 100 nm film of ZnSe with three 5nm ZnCdSe quantum
wells embedded.
14: see 13
15: no
16: there is no vendor (ask James Jonway again)
17: ZnSe has the same requirements as GaAs
18: the material will not be stored in SNF
19: see 18
20: Disposal should be the same as GaAs
21: That`s a difficult question, since it is not clear yet, which path we
have to follow. I asume it is the same as
    for GaAs, when photonic crystals are made out of it. However, there is a
difference is the PQUEST process, since
    the etching is based on H2/CH4. The undercut will be made with NaOH to
etch GaAs which is used as the
    sacrifical instead of the usual HF. Otherwise it is the same as for
GaAs-wafers (Normal cleaning procedure, spinning
    of PMMA as a resist, Raith-writing, development, PQEST etching, and NaOH
wet etch for the undercut).

I hope this helps.

Thank you very much,
Stephan




-----Original Message-----
From: Mary Tang [mailto:mtang at snf.stanford.edu] 
Sent: Dienstag, 14. Dezember 2004 18:53
To: Stephan Goetzinger
Cc: specmat at snf.stanford.edu; 'James Conway'
Subject: Re: ZnSe Processing


Hi Stephan --

Could you please provide more information about your materials and your 
process flow?  Please refer to 
http://snf.stanford.edu/Materials/NewMatProc.html  for the kinds of 
information needed.

We don't have a lot of experience with II/VI compounds, so your input is 
critical.  Just as a guess, I would say that your materials would be 
considered for use only in gold-contaminated equipment -- and with 
further restrictions only to equipment that is compatible with GaAs 
processing (not all gold-contaminated equipment is safe for GaAs.) 

Please include as much information possible about the cleans, etches, 
process equipment (and process conditions, particularly if they involve 
etching or heating.)  If you need help deciding on equipment and process 
flows, please contact any one of the SpecMat team members (John Shott, 
Jim McVittie, Paul Rissman, Ed Myers, Mahnaz Mansourpour, and me.)

Thanks,

Mary

Stephan Goetzinger wrote:

> Dear Ladies and Gentlemen,
>  
> I am thinking of fabricating some microcavities out of a 100 nm thick 
> film of ZnSe (a II/VI semiconductor) grown on a GaAs wafer. That film 
> will contain three 5 nm thick ZnCdSe quantum wells. Is there a chance 
> to bring this material into the clean room and process it there?
>  
>  
> Thank you very much,
> Stephan Goetzinger
>  
> PS: If you have further questions don`t hesitate to contact me.
>
> Stephan Goetzinger
> Edward L. Ginzton Laboratory Box S-79
> Stanford University
> Stanford, CA 94305-4088
> Tel.: ++1-650-723-3929
> Fax.: ++1-650-723-5320
> http://feynman.stanford.edu/
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu