From mlkraft at stanford.edu Wed Feb 4 12:09:28 2004 From: mlkraft at stanford.edu (Mary Kraft) Date: Wed, 04 Feb 2004 12:09:28 -0800 Subject: Approval for SU-8 usage Message-ID: <5.2.1.1.2.20040204120234.00a77cd8@mlkraft.pobox.stanford.edu> Mahnaz, As you requested, the information that SpecMat needs for me to use SU-8 in the SNF is in the attached pdf files. Please let me know if you need additional information, or if you have a problem opening any of these documents. Thanks, Mary Kraft -------------- next part -------------- A non-text attachment was scrubbed... Name: SpecMat document.pdf Type: application/pdf Size: 164322 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: su-8developer MSDS.pdf Type: application/pdf Size: 62668 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: su-8 resist MSDS.pdf Type: application/pdf Size: 41631 bytes Desc: not available URL: From edu_sales5 at education-discounts.com Wed Feb 4 19:42:54 2004 From: edu_sales5 at education-discounts.com (Educational Sales) Date: Wed, 04 Feb 2004 19:42:54 -0800 Subject: Academic Edition Software MAJOR DISCOUNTS! 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Computer Products for Education 5325 140th Avenue North Clearwater, Florida 33760 Tel: 800-679-7007 Fax: 800-679-6996 ___________________ 2/4/2004 7:42:54 PM From kenney at SLAC.Stanford.EDU Tue Feb 17 12:07:35 2004 From: kenney at SLAC.Stanford.EDU (Chris Kenney) Date: Tue, 17 Feb 2004 12:07:35 -0800 (PST) Subject: Status? - DI/Ethanol/HF Request (fwd) Message-ID: Dear Specmat, Could you let me know the status of my request to perform photo-assisted, electrochemical etching using a DI/ethanol/HF solution? Do you need more information from me? Are there issues we should discuss? Thank you for your help. Chris ---------- Forwarded message ---------- Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) From: Chris Kenney To: specmat at snf.stanford.edu Cc: sher at slac.stanford.edu Subject: DI/Ethanol/HF Request Dear SpecMat, Our group would like to develop a photo-assisted, electro- chemical etch process for making high-aspect ratio holes in silicon substrates. The basic setup involves a container which holds the silicon wafer against a window on one side. This is sealed using an O-ring. One side of the wafer will be exposed to the etching solution and the other side to the ambient air and a light source. The entire apparatus will be set inside a secondary containment basin. This basin in turn would be inside the sink at the wet bench. So there would be 3 levels of nested containers for the solution. Electrical contact is also made to the air-side of the wafer. There are two platinum electrodes immersed in the solution iside the container: a reference electrode and a field electrode. In use, a potential of about 1 Volt will be applied between the field electrode and the silicon wafer. We expect total electrical currents used in the system to be less than 100 milliAmperes. The power source will have current and Voltage limits set near these values for safety. The power source is a Keitheley 2400 source meter. It would be located away from the interior of the wet bench and close to the floor to avoid a fall hazard. The solution will consist of approximately 75% water and 25% ethanol with a small amount of HF. The typical HF concentration would be between 4% and 6% by weight. It seems that the unusual aspect of this request is the use of a mixture containing both an acid and a solvent. I'm unsure of the best method for disposing of this solution after use. We feel the most appropriate location for this set up is the GaAs wet bench. We would use less than half of the bench and would remove our set up when it wasn't in use to avoid getting in the way of other users. We welcome all suggestions and comments on the best way to proceed. Feel free to ask any questions. We would like permission to use the GaAs wet bench for this work. Thanks for your help. Chris From mtang at snf.stanford.edu Wed Feb 18 08:09:07 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 18 Feb 2004 08:09:07 -0800 Subject: Status? - DI/Ethanol/HF Request (fwd) References: Message-ID: <40338E23.9E0C0B12@snf.stanford.edu> Wups! Sorry, I meant to follow up. I believe Jim McVittie went through this exercise and it was decided that this chemical mixture and the first rinses of labware and wafers, should all go into the HF drain. The only concern is that ethanol is a flammable solvent and that other people using wbgeneral may put HNA (which contains nitric, an oxidizer and a no-no with regard to flammables) into the sink as well. It is thought that the dilution from other HF tanks and such would make it a non-issue, particularly if the volume and proportion of ethanol were relatively small. Alternatively, to be on the extra-safe side, it may be better to simply collect the waste in a labelled hazardous waste container and deal with it according to standard procedure. I'll double check with Jim and get back to you on this. As for the set up -- Uli and Jim Haydon have gone through this before with another user in the last year or so. Please work with them on the logistics of scheduling, setup, etc. at wbgaas. Again, my apologies for the delay -- I'd forgotten about the SpecMat files. Mary Chris Kenney wrote: > Dear Specmat, > > Could you let me know the status of my request to perform > photo-assisted, electrochemical etching using a DI/ethanol/HF > solution? > > Do you need more information from me? > > Are there issues we should discuss? > > Thank you for your help. > > Chris > > ---------- Forwarded message ---------- > Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) > From: Chris Kenney > To: specmat at snf.stanford.edu > Cc: sher at slac.stanford.edu > Subject: DI/Ethanol/HF Request > > Dear SpecMat, > > Our group would like to develop a photo-assisted, electro- > chemical etch process for making high-aspect ratio holes > in silicon substrates. > > The basic setup involves a container which holds the silicon > wafer against a window on one side. This is sealed using > an O-ring. One side of the wafer will be exposed to the > etching solution and the other side to the ambient air and > a light source. > > The entire apparatus will be set inside a secondary containment > basin. This basin in turn would be inside the sink at the wet bench. > > So there would be 3 levels of nested containers for the solution. > > Electrical contact is also made to the air-side of the wafer. > > There are two platinum electrodes immersed in the solution iside > the container: a reference electrode and a field electrode. > > In use, a potential of about 1 Volt will be applied between > the field electrode and the silicon wafer. We expect total > electrical currents used in the system to be less than > 100 milliAmperes. The power source will have current > and Voltage limits set near these values for safety. > > The power source is a Keitheley 2400 source meter. It would > be located away from the interior of the wet bench and close to > the floor to avoid a fall hazard. > > The solution will consist of approximately 75% water and > 25% ethanol with a small amount of HF. The typical HF concentration > would be between 4% and 6% by weight. > > It seems that the unusual aspect of this request is the > use of a mixture containing both an acid and a solvent. > > I'm unsure of the best method for disposing of this solution > after use. > > We feel the most appropriate location for this set up is the > GaAs wet bench. We would use less than half of the bench and > would remove our set up when it wasn't in use to avoid > getting in the way of other users. > > We welcome all suggestions and comments on the best way to proceed. > > Feel free to ask any questions. > > We would like permission to use the GaAs wet bench for this work. > > Thanks for your help. > > Chris -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kenney at SLAC.Stanford.EDU Wed Feb 18 10:20:29 2004 From: kenney at SLAC.Stanford.EDU (Chris Kenney) Date: Wed, 18 Feb 2004 10:20:29 -0800 (PST) Subject: Status? - DI/Ethanol/HF Request (fwd) In-Reply-To: <40338E23.9E0C0B12@snf.stanford.edu> References: <40338E23.9E0C0B12@snf.stanford.edu> Message-ID: Hi Mary, Thanks for your reply. I discussed all the details with Jim and Uli in December. My impression is that Jim has a permit form the county to dispose of a modest amount of ethanol down the HF drain. I was lacking official permission from specmat to proceed. I will talk to Uli and Jim again to make sure I understand the details of how I should do this before performing the etch. Thanks for your help. Chris On Wed, 18 Feb 2004, Mary Tang wrote: > Wups! Sorry, I meant to follow up. I believe Jim McVittie went through > this exercise and it was decided that this chemical mixture and the > first rinses of labware and wafers, should all go into the HF drain. > The only concern is that ethanol is a flammable solvent and that other > people using wbgeneral may put HNA (which contains nitric, an oxidizer > and a no-no with regard to flammables) into the sink as well. It is > thought that the dilution from other HF tanks and such would make it a > non-issue, particularly if the volume and proportion of ethanol were > relatively small. Alternatively, to be on the extra-safe side, it may > be better to simply collect the waste in a labelled hazardous waste > container and deal with it according to standard procedure. I'll double > check with Jim and get back to you on this. > > As for the set up -- Uli and Jim Haydon have gone through this before > with another user in the last year or so. Please work with them on the > logistics of scheduling, setup, etc. at wbgaas. > > Again, my apologies for the delay -- I'd forgotten about the SpecMat > files. > > Mary > > > Chris Kenney wrote: > > > Dear Specmat, > > > > Could you let me know the status of my request to perform > > photo-assisted, electrochemical etching using a DI/ethanol/HF > > solution? > > > > Do you need more information from me? > > > > Are there issues we should discuss? > > > > Thank you for your help. > > > > Chris > > > > ---------- Forwarded message ---------- > > Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) > > From: Chris Kenney > > To: specmat at snf.stanford.edu > > Cc: sher at slac.stanford.edu > > Subject: DI/Ethanol/HF Request > > > > Dear SpecMat, > > > > Our group would like to develop a photo-assisted, electro- > > chemical etch process for making high-aspect ratio holes > > in silicon substrates. > > > > The basic setup involves a container which holds the silicon > > wafer against a window on one side. This is sealed using > > an O-ring. One side of the wafer will be exposed to the > > etching solution and the other side to the ambient air and > > a light source. > > > > The entire apparatus will be set inside a secondary containment > > basin. This basin in turn would be inside the sink at the wet bench. > > > > So there would be 3 levels of nested containers for the solution. > > > > Electrical contact is also made to the air-side of the wafer. > > > > There are two platinum electrodes immersed in the solution iside > > the container: a reference electrode and a field electrode. > > > > In use, a potential of about 1 Volt will be applied between > > the field electrode and the silicon wafer. We expect total > > electrical currents used in the system to be less than > > 100 milliAmperes. The power source will have current > > and Voltage limits set near these values for safety. > > > > The power source is a Keitheley 2400 source meter. It would > > be located away from the interior of the wet bench and close to > > the floor to avoid a fall hazard. > > > > The solution will consist of approximately 75% water and > > 25% ethanol with a small amount of HF. The typical HF concentration > > would be between 4% and 6% by weight. > > > > It seems that the unusual aspect of this request is the > > use of a mixture containing both an acid and a solvent. > > > > I'm unsure of the best method for disposing of this solution > > after use. > > > > We feel the most appropriate location for this set up is the > > GaAs wet bench. We would use less than half of the bench and > > would remove our set up when it wasn't in use to avoid > > getting in the way of other users. > > > > We welcome all suggestions and comments on the best way to proceed. > > > > Feel free to ask any questions. > > > > We would like permission to use the GaAs wet bench for this work. > > > > Thanks for your help. > > > > Chris > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > From mtang at snf.stanford.edu Wed Feb 18 10:31:50 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 18 Feb 2004 10:31:50 -0800 Subject: Status? - DI/Ethanol/HF Request (fwd) References: <40338E23.9E0C0B12@snf.stanford.edu> Message-ID: <4033AF96.A132DC09@snf.stanford.edu> Hi Chris -- Yes, I just received an email from Jim and as he was doing only a small quantity, it was OK'ed to put the waste into the HF drain. He indicated that if this becomes a routine procedure, then we will need to reconsider the ethanol issue. So, consider this the official SpecMat go-ahead to proceed, with the proviso that you are the only group doing this and that it is being done relatively infrequently, with small quantities. Thanks, Mary Chris Kenney wrote: > Hi Mary, > > Thanks for your reply. > > I discussed all the details with Jim and Uli in December. > > My impression is that Jim has a permit form the county to > dispose of a modest amount of ethanol down the HF drain. > > I was lacking official permission from specmat to proceed. > > I will talk to Uli and Jim again to make sure I understand > the details of how I should do this before performing the etch. > > Thanks for your help. > > Chris > > On Wed, 18 Feb 2004, Mary Tang wrote: > > > Wups! Sorry, I meant to follow up. I believe Jim McVittie went through > > this exercise and it was decided that this chemical mixture and the > > first rinses of labware and wafers, should all go into the HF drain. > > The only concern is that ethanol is a flammable solvent and that other > > people using wbgeneral may put HNA (which contains nitric, an oxidizer > > and a no-no with regard to flammables) into the sink as well. It is > > thought that the dilution from other HF tanks and such would make it a > > non-issue, particularly if the volume and proportion of ethanol were > > relatively small. Alternatively, to be on the extra-safe side, it may > > be better to simply collect the waste in a labelled hazardous waste > > container and deal with it according to standard procedure. I'll double > > check with Jim and get back to you on this. > > > > As for the set up -- Uli and Jim Haydon have gone through this before > > with another user in the last year or so. Please work with them on the > > logistics of scheduling, setup, etc. at wbgaas. > > > > Again, my apologies for the delay -- I'd forgotten about the SpecMat > > files. > > > > Mary > > > > > > Chris Kenney wrote: > > > > > Dear Specmat, > > > > > > Could you let me know the status of my request to perform > > > photo-assisted, electrochemical etching using a DI/ethanol/HF > > > solution? > > > > > > Do you need more information from me? > > > > > > Are there issues we should discuss? > > > > > > Thank you for your help. > > > > > > Chris > > > > > > ---------- Forwarded message ---------- > > > Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) > > > From: Chris Kenney > > > To: specmat at snf.stanford.edu > > > Cc: sher at slac.stanford.edu > > > Subject: DI/Ethanol/HF Request > > > > > > Dear SpecMat, > > > > > > Our group would like to develop a photo-assisted, electro- > > > chemical etch process for making high-aspect ratio holes > > > in silicon substrates. > > > > > > The basic setup involves a container which holds the silicon > > > wafer against a window on one side. This is sealed using > > > an O-ring. One side of the wafer will be exposed to the > > > etching solution and the other side to the ambient air and > > > a light source. > > > > > > The entire apparatus will be set inside a secondary containment > > > basin. This basin in turn would be inside the sink at the wet bench. > > > > > > So there would be 3 levels of nested containers for the solution. > > > > > > Electrical contact is also made to the air-side of the wafer. > > > > > > There are two platinum electrodes immersed in the solution iside > > > the container: a reference electrode and a field electrode. > > > > > > In use, a potential of about 1 Volt will be applied between > > > the field electrode and the silicon wafer. We expect total > > > electrical currents used in the system to be less than > > > 100 milliAmperes. The power source will have current > > > and Voltage limits set near these values for safety. > > > > > > The power source is a Keitheley 2400 source meter. It would > > > be located away from the interior of the wet bench and close to > > > the floor to avoid a fall hazard. > > > > > > The solution will consist of approximately 75% water and > > > 25% ethanol with a small amount of HF. The typical HF concentration > > > would be between 4% and 6% by weight. > > > > > > It seems that the unusual aspect of this request is the > > > use of a mixture containing both an acid and a solvent. > > > > > > I'm unsure of the best method for disposing of this solution > > > after use. > > > > > > We feel the most appropriate location for this set up is the > > > GaAs wet bench. We would use less than half of the bench and > > > would remove our set up when it wasn't in use to avoid > > > getting in the way of other users. > > > > > > We welcome all suggestions and comments on the best way to proceed. > > > > > > Feel free to ask any questions. > > > > > > We would like permission to use the GaAs wet bench for this work. > > > > > > Thanks for your help. > > > > > > Chris > > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kenney at SLAC.Stanford.EDU Wed Feb 18 18:10:19 2004 From: kenney at SLAC.Stanford.EDU (Chris Kenney) Date: Wed, 18 Feb 2004 18:10:19 -0800 (PST) Subject: Status? - DI/Ethanol/HF Request (fwd) In-Reply-To: <4033AF96.A132DC09@snf.stanford.edu> References: <40338E23.9E0C0B12@snf.stanford.edu> <4033AF96.A132DC09@snf.stanford.edu> Message-ID: Thanks Mary and Jim On Wed, 18 Feb 2004, Mary Tang wrote: > Hi Chris -- > > Yes, I just received an email from Jim and as he was doing only a small > quantity, it was OK'ed to put the waste into the HF drain. He indicated that > if this becomes a routine procedure, then we will need to reconsider the > ethanol issue. > > So, consider this the official SpecMat go-ahead to proceed, with the proviso > that you are the only group doing this and that it is being done relatively > infrequently, with small quantities. > > > Thanks, > > Mary > > Chris Kenney wrote: > > > Hi Mary, > > > > Thanks for your reply. > > > > I discussed all the details with Jim and Uli in December. > > > > My impression is that Jim has a permit form the county to > > dispose of a modest amount of ethanol down the HF drain. > > > > I was lacking official permission from specmat to proceed. > > > > I will talk to Uli and Jim again to make sure I understand > > the details of how I should do this before performing the etch. > > > > Thanks for your help. > > > > Chris > > > > On Wed, 18 Feb 2004, Mary Tang wrote: > > > > > Wups! Sorry, I meant to follow up. I believe Jim McVittie went through > > > this exercise and it was decided that this chemical mixture and the > > > first rinses of labware and wafers, should all go into the HF drain. > > > The only concern is that ethanol is a flammable solvent and that other > > > people using wbgeneral may put HNA (which contains nitric, an oxidizer > > > and a no-no with regard to flammables) into the sink as well. It is > > > thought that the dilution from other HF tanks and such would make it a > > > non-issue, particularly if the volume and proportion of ethanol were > > > relatively small. Alternatively, to be on the extra-safe side, it may > > > be better to simply collect the waste in a labelled hazardous waste > > > container and deal with it according to standard procedure. I'll double > > > check with Jim and get back to you on this. > > > > > > As for the set up -- Uli and Jim Haydon have gone through this before > > > with another user in the last year or so. Please work with them on the > > > logistics of scheduling, setup, etc. at wbgaas. > > > > > > Again, my apologies for the delay -- I'd forgotten about the SpecMat > > > files. > > > > > > Mary > > > > > > > > > Chris Kenney wrote: > > > > > > > Dear Specmat, > > > > > > > > Could you let me know the status of my request to perform > > > > photo-assisted, electrochemical etching using a DI/ethanol/HF > > > > solution? > > > > > > > > Do you need more information from me? > > > > > > > > Are there issues we should discuss? > > > > > > > > Thank you for your help. > > > > > > > > Chris > > > > > > > > ---------- Forwarded message ---------- > > > > Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) > > > > From: Chris Kenney > > > > To: specmat at snf.stanford.edu > > > > Cc: sher at slac.stanford.edu > > > > Subject: DI/Ethanol/HF Request > > > > > > > > Dear SpecMat, > > > > > > > > Our group would like to develop a photo-assisted, electro- > > > > chemical etch process for making high-aspect ratio holes > > > > in silicon substrates. > > > > > > > > The basic setup involves a container which holds the silicon > > > > wafer against a window on one side. This is sealed using > > > > an O-ring. One side of the wafer will be exposed to the > > > > etching solution and the other side to the ambient air and > > > > a light source. > > > > > > > > The entire apparatus will be set inside a secondary containment > > > > basin. This basin in turn would be inside the sink at the wet bench. > > > > > > > > So there would be 3 levels of nested containers for the solution. > > > > > > > > Electrical contact is also made to the air-side of the wafer. > > > > > > > > There are two platinum electrodes immersed in the solution iside > > > > the container: a reference electrode and a field electrode. > > > > > > > > In use, a potential of about 1 Volt will be applied between > > > > the field electrode and the silicon wafer. We expect total > > > > electrical currents used in the system to be less than > > > > 100 milliAmperes. The power source will have current > > > > and Voltage limits set near these values for safety. > > > > > > > > The power source is a Keitheley 2400 source meter. It would > > > > be located away from the interior of the wet bench and close to > > > > the floor to avoid a fall hazard. > > > > > > > > The solution will consist of approximately 75% water and > > > > 25% ethanol with a small amount of HF. The typical HF concentration > > > > would be between 4% and 6% by weight. > > > > > > > > It seems that the unusual aspect of this request is the > > > > use of a mixture containing both an acid and a solvent. > > > > > > > > I'm unsure of the best method for disposing of this solution > > > > after use. > > > > > > > > We feel the most appropriate location for this set up is the > > > > GaAs wet bench. We would use less than half of the bench and > > > > would remove our set up when it wasn't in use to avoid > > > > getting in the way of other users. > > > > > > > > We welcome all suggestions and comments on the best way to proceed. > > > > > > > > Feel free to ask any questions. > > > > > > > > We would like permission to use the GaAs wet bench for this work. > > > > > > > > Thanks for your help. > > > > > > > > Chris > > > > > > -- > > > Mary X. Tang, Ph.D. > > > Stanford Nanofabrication Facility > > > CIS Room 136, Mail Code 4070 > > > Stanford, CA 94305 > > > (650)723-9980 > > > mtang at stanford.edu > > > http://snf.stanford.edu > > > > > > > > > > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > From SamS at LSInc.biz Thu Feb 19 14:28:32 2004 From: SamS at LSInc.biz (Samuel B. Schaevitz) Date: Thu, 19 Feb 2004 14:28:32 -0800 Subject: Zirconia in the STSetcher Message-ID: <6.0.1.1.2.20040219130648.031f80c8@pop.lilliputiansystemsinc.com> Hey All, As I discussed with Jim, Lilliputian would like to put Yttria-stabilized Zirconia into the STS etcher. We have experience from an STS at Silicon Microstructures indicating that no etching of the YSZ occurs. In the attached files: You will see in the RBS and PIXE data that the film consists of Zirconium, Yttrium, and Hafnium, fully oxidized, sitting on SiO2. Yttria stabilized Zirconia is widely investigated as a new gate dielectric, and I have attached one recent article which comments on the excellent thermodynamic stability with respect to silicon. Hafnia has almost identical chemical properties to Zirconia, and so is also investigated for gate dielectrics; attached is a paper which discusses both Zr and Hf. Thank you, Sam ------------------------------------------------------ Samuel B. Schaevitz Lilliputian Systems, Inc. 46560 Fremont Blvd, Suite 419 Fremont, CA 94538 Cell: 617 543-5875 Office: 510 656-5999 Fax: 510 656-4999 Corporate Headquarters 25-K Olympia Ave, Suite 100 Woburn, MA 01801 Tel: 781 935-9777 Fax: 781 935-0666 -------------- next part -------------- A non-text attachment was scrubbed... Name: YSZ_gate.pdf Type: application/pdf Size: 468306 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Hf_Zr_gate.pdf Type: application/pdf Size: 179938 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: RBS OSD3-201.doc Type: application/msword Size: 235008 bytes Desc: not available URL: From mtang at snf.stanford.edu Thu Feb 19 15:08:43 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 19 Feb 2004 15:08:43 -0800 Subject: Zirconia in the STSetcher References: <6.0.1.1.2.20040219130648.031f80c8@pop.lilliputiansystemsinc.com> Message-ID: <403541FB.3240CF07@snf.stanford.edu> Hi Jim -- I take it, then, that this is OK with you? Just for the sake of completeness of SpecMat records: 1. Is the zirconia exposed to the plasma, or covered with resist? 2. Where will the wafers be cleaned? 3. Will these wafers be processed through any non-gold-contaminated equipment after this step? 4. Will this material be acceptable as a rule or only material from this specific source, for which the RBS test was done? (Anything else I've forgotten?) Thanks, Mary "Samuel B. Schaevitz" wrote: > Hey All, > > As I discussed with Jim, Lilliputian would like to put Yttria-stabilized > Zirconia into the STS etcher. We have experience from an STS at Silicon > Microstructures indicating that no etching of the YSZ occurs. > > In the attached files: > You will see in the RBS and PIXE data that the film consists of Zirconium, > Yttrium, and Hafnium, fully oxidized, sitting on SiO2. Yttria stabilized > Zirconia is widely investigated as a new gate dielectric, and I have > attached one recent article which comments on the excellent thermodynamic > stability with respect to silicon. Hafnia has almost identical chemical > properties to Zirconia, and so is also investigated for gate dielectrics; > attached is a paper which discusses both Zr and Hf. > > Thank you, > Sam > > ------------------------------------------------------ > Samuel B. Schaevitz > Lilliputian Systems, Inc. > 46560 Fremont Blvd, Suite 419 > Fremont, CA 94538 > Cell: 617 543-5875 > Office: 510 656-5999 > Fax: 510 656-4999 > > Corporate Headquarters > 25-K Olympia Ave, Suite 100 > Woburn, MA 01801 > Tel: 781 935-9777 > Fax: 781 935-0666 > > ------------------------------------------------------------------------ > Name: YSZ_gate.pdf > YSZ_gate.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: Hf_Zr_gate.pdf > Hf_Zr_gate.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: RBS OSD3-201.doc > RBS OSD3-201.doc Type: WINWORD File (application/msword) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From SamS at LSInc.biz Thu Feb 19 15:22:45 2004 From: SamS at LSInc.biz (Samuel B. Schaevitz) Date: Thu, 19 Feb 2004 15:22:45 -0800 Subject: Zirconia in the STSetcher In-Reply-To: <403541FB.3240CF07@snf.stanford.edu> References: <6.0.1.1.2.20040219130648.031f80c8@pop.lilliputiansystemsinc.com> <403541FB.3240CF07@snf.stanford.edu> Message-ID: <6.0.1.1.2.20040219151207.03307a38@pop.lilliputiansystemsinc.com> Mary, I'm not sure that Jim has made a decision, although I hope he has. In the mean time, here are the answers to your questions: >1. Is the zirconia exposed to the plasma, or covered with resist? I would like approval for exposed YSZ. If I am only able to get approval if it is covered, that is a start. >2. Where will the wafers be cleaned? Except for the YSZ deposition step, the wafers are only processed at SNF in non-gold-contaminated equipment. >3. Will these wafers be processed through any non-gold-contaminated equipment >after this step? No, the wafers are not processed in any other non-gold-contaminated equipment after YSZ deposition. >4. Will this material be acceptable as a rule or only material from this >specific source, for which the RBS test was done? We only have a specific source right now. We will be happy to resubmit if we qualify a new source. >"Samuel B. Schaevitz" wrote: > > > Hey All, > > > > As I discussed with Jim, Lilliputian would like to put Yttria-stabilized > > Zirconia into the STS etcher. We have experience from an STS at Silicon > > Microstructures indicating that no etching of the YSZ occurs. > > > > In the attached files: > > You will see in the RBS and PIXE data that the film consists of Zirconium, > > Yttrium, and Hafnium, fully oxidized, sitting on SiO2. Yttria stabilized > > Zirconia is widely investigated as a new gate dielectric, and I have > > attached one recent article which comments on the excellent thermodynamic > > stability with respect to silicon. Hafnia has almost identical chemical > > properties to Zirconia, and so is also investigated for gate dielectrics; > > attached is a paper which discusses both Zr and Hf. > > > > Thank you, > > Sam > > > > ------------------------------------------------------ > > Samuel B. Schaevitz > > Lilliputian Systems, Inc. > > 46560 Fremont Blvd, Suite 419 > > Fremont, CA 94538 > > Cell: 617 543-5875 > > Office: 510 656-5999 > > Fax: 510 656-4999 > > > > Corporate Headquarters > > 25-K Olympia Ave, Suite 100 > > Woburn, MA 01801 > > Tel: 781 935-9777 > > Fax: 781 935-0666 > > > > ------------------------------------------------------------------------ > > Name: YSZ_gate.pdf > > YSZ_gate.pdf Type: Portable Document Format (application/pdf) > > Encoding: base64 > > Download Status: Not downloaded with message > > > > Name: Hf_Zr_gate.pdf > > Hf_Zr_gate.pdf Type: Portable Document Format > (application/pdf) > > Encoding: base64 > > Download Status: Not downloaded with message > > > > Name: RBS OSD3-201.doc > > RBS OSD3-201.doc Type: WINWORD File (application/msword) > > Encoding: base64 > > Download Status: Not downloaded with message > >-- >Mary X. Tang, Ph.D. >Stanford Nanofabrication Facility >CIS Room 136, Mail Code 4070 >Stanford, CA 94305 >(650)723-9980 >mtang at stanford.edu >http://snf.stanford.edu ------------------------------------------------------ Samuel B. Schaevitz Lilliputian Systems, Inc. 46560 Fremont Blvd, Suite 419 Fremont, CA 94538 Cell: 617 543-5875 Office: 510 656-5999 Fax: 510 656-4999 Corporate Headquarters 25-K Olympia Ave, Suite 100 Woburn, MA 01801 Tel: 781 935-9777 Fax: 781 935-0666 From mtang at snf.stanford.edu Mon Feb 23 11:38:37 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 23 Feb 2004 11:38:37 -0800 Subject: [Fwd: New materials request] Message-ID: <403A56BD.C02C126E@snf.stanford.edu> Hi all -- Was this approved? (Sorry, I don't seem to have any response in my files...) Mary -------- Original Message -------- Subject: New materials request Date: Fri, 30 Jan 2004 12:08:41 -0800 From: masa To: specmat at snf.stanford.edu CC: mcvittie at snf.stanford.edu Dear Special Materials Committee, I'd like to request to use new materials in CIS. Here is information below. Requestor name: Masafumi Nakamura Phone number: 6507259936 email address: masafumi at stanford.edu Requestor?fs PI (Advisor) or Company: Prof. Prinz The name of the new Chemical (give all names commonly used): YSZ(Yttrium Stabilized Zirconia) and GDC(Gadolinium Doped Ceria) If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. Name of vendor/manufacturer that you are planning to obtain this material from: Kurt J. Lesker URL for vendor?fs website where info on the proposed chemical can be found: http://www.lesker.com/newweb/menu_sputtertargets.cfm?CFID=509541&CFTOKEN=52542279 Vendor?fs address and phone number: 3983 First Street Livermore, CA 94551 1-800-245-1656/925-449-0104 What is your reason for wanting to bring this material into the lab: I want to process, such as etch, Si wafer or SiN in CIS after deposition of these materials. List all the lab equipment and wet benches that you propose to use with this chemical: Drytek1 and wetbenchgen Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): YSZ: Yttrium 16%, Zirconia 84% - Purity:99.7% GDC: Gadolinium 20%, Ceria 20% - Purity:99.9% State the form that the proposed chemical is in: Thin film on Si wafer. Put together a detailed process flow description on how you proposed to use this chemical: The materials are DC sputtered thin film and oxidized afterward. I sent MSDS to Jim via fax. If you have any comment on them, Please let me know. Regards. Masafumi Nakamura From gu at monano.com Tue Feb 24 10:42:49 2004 From: gu at monano.com (gu) Date: Tue, 24 Feb 2004 10:42:49 -0800 Subject: new target for metallic Message-ID: <403B9B29.5010900@monano.com> Hi All, Good morning! I want to know whether it is possible to use metallic to sputter some alloys such as AlNi (with small percentage of Ni) and AlFe (with small percentage of Fe). I saw a NiCr target for metallic, it means Ni can be used in metallic. I noted that Fe Ni and Co can not be used for metallic due to magnetic shielding, but small percentage of Fe or Ni in the alloy could be OK. Your quick response will be appreciated. Best regards, Gang Gu Senior Scientist, Ph. D Molecular Nanosystems 977 Commercial Street Palo Alto, CA 94303 Tel 650-8462598 From SamS at LSInc.biz Thu Feb 26 09:26:16 2004 From: SamS at LSInc.biz (Samuel B. Schaevitz) Date: Thu, 26 Feb 2004 09:26:16 -0800 Subject: Zirconia in the STSetcher In-Reply-To: <6.0.1.1.2.20040219151207.03307a38@pop.lilliputiansystemsin c.com> References: <403541FB.3240CF07@snf.stanford.edu> <6.0.1.1.2.20040219130648.031f80c8@pop.lilliputiansystemsinc.com> <403541FB.3240CF07@snf.stanford.edu> Message-ID: <5.2.1.1.2.20040226092500.039236c0@pop.lilliputiansystemsinc.com> Hey All, I have not heard anything more about this request. What is the status? I have wafers that I need to processes. Thanks, Sam At 03:22 PM 2/19/2004, Samuel B. Schaevitz wrote: >Mary, > >I'm not sure that Jim has made a decision, although I hope he has. In the >mean time, here are the answers to your questions: > >>1. Is the zirconia exposed to the plasma, or covered with resist? >I would like approval for exposed YSZ. If I am only able to get approval >if it is covered, that is a start. > >>2. Where will the wafers be cleaned? >Except for the YSZ deposition step, the wafers are only processed at SNF >in non-gold-contaminated equipment. > >>3. Will these wafers be processed through any non-gold-contaminated >>equipment >>after this step? >No, the wafers are not processed in any other non-gold-contaminated >equipment after YSZ deposition. > >>4. Will this material be acceptable as a rule or only material from this >>specific source, for which the RBS test was done? >We only have a specific source right now. We will be happy to resubmit if >we qualify a new source. > >>"Samuel B. Schaevitz" wrote: >> >> > Hey All, >> > >> > As I discussed with Jim, Lilliputian would like to put Yttria-stabilized >> > Zirconia into the STS etcher. We have experience from an STS at Silicon >> > Microstructures indicating that no etching of the YSZ occurs. >> > >> > In the attached files: >> > You will see in the RBS and PIXE data that the film consists of Zirconium, >> > Yttrium, and Hafnium, fully oxidized, sitting on SiO2. Yttria stabilized >> > Zirconia is widely investigated as a new gate dielectric, and I have >> > attached one recent article which comments on the excellent thermodynamic >> > stability with respect to silicon. Hafnia has almost identical chemical >> > properties to Zirconia, and so is also investigated for gate dielectrics; >> > attached is a paper which discusses both Zr and Hf. >> > >> > Thank you, >> > Sam >> > >> > ------------------------------------------------------ >> > Samuel B. Schaevitz >> > Lilliputian Systems, Inc. >> > 46560 Fremont Blvd, Suite 419 >> > Fremont, CA 94538 >> > Cell: 617 543-5875 >> > Office: 510 656-5999 >> > Fax: 510 656-4999 >> > >> > Corporate Headquarters >> > 25-K Olympia Ave, Suite 100 >> > Woburn, MA 01801 >> > Tel: 781 935-9777 >> > Fax: 781 935-0666 >> > >> > ------------------------------------------------------------------------ >> > Name: YSZ_gate.pdf >> > YSZ_gate.pdf Type: Portable Document Format (application/pdf) >> > Encoding: base64 >> > Download Status: Not downloaded with message >> > >> > Name: Hf_Zr_gate.pdf >> > Hf_Zr_gate.pdf Type: Portable Document Format >> (application/pdf) >> > Encoding: base64 >> > Download Status: Not downloaded with message >> > >> > Name: RBS OSD3-201.doc >> > RBS OSD3-201.doc Type: WINWORD File (application/msword) >> > Encoding: base64 >> > Download Status: Not downloaded with message >> >>-- >>Mary X. Tang, Ph.D. >>Stanford Nanofabrication Facility >>CIS Room 136, Mail Code 4070 >>Stanford, CA 94305 >>(650)723-9980 >>mtang at stanford.edu >>http://snf.stanford.edu > >------------------------------------------------------ >Samuel B. Schaevitz >Lilliputian Systems, Inc. >46560 Fremont Blvd, Suite 419 >Fremont, CA 94538 >Cell: 617 543-5875 >Office: 510 656-5999 >Fax: 510 656-4999 > >Corporate Headquarters >25-K Olympia Ave, Suite 100 >Woburn, MA 01801 >Tel: 781 935-9777 >Fax: 781 935-0666 ------------------------------------------------------ Samuel B. Schaevitz Lilliputian Systems, Inc. 46560 Fremont Blvd, Suite 419 Fremont, CA 94538 Cell: 617 543-5875 Office: 510 656-5999 Fax: 510 656-4999 Corporate Headquarters 25-K Olympia Ave, Suite 100 Woburn, MA 01801 Tel: 781 935-9777 Fax: 781 935-0666 From SamS at LSInc.biz Thu Feb 26 10:48:05 2004 From: SamS at LSInc.biz (Samuel B. Schaevitz) Date: Thu, 26 Feb 2004 10:48:05 -0800 Subject: Return to fab after processing at SMI Message-ID: <5.2.1.1.2.20040226102043.03912008@pop.lilliputiansystemsinc.com> Hey All, I have some wafers which have been through processing at SMI (Silicon Microstructures, Inc. in Milpitas), that I would like to bring back into the fab as clean wafers. The wafers have no metals or other non-standard materials on them. These wafers have been through 3 steps at SMI: photo processing, plasma etching, and wet oxidation. The photo is done in an area which also processes Au wafers. This is similar to SNF's policy, so I do not see why this would be a problem. The plasma etching consists of a SiN etch in a Tegal parallel-plate etcher, followed by a resist strip in a Branson barrel asher. Au is not etched in either machine, however Au-coated wafers are allowed in both machines. The final step at SMI is a diffusion clean in NH3OH:H2O2 and HCl:H2O2 (SC-1 and SC-2), followed by a wet oxidation at 800C in a furnace. Au is not allowed into either the diffusion clean or the furnace. I believe that the final clean in the diffusion bench should eliminate any possible contact contamination in the metal etchers. If SNF will not accept these wafers as "clean", then I would like to specifically request that these wafers be allowed into the following equipment: All Au-contaminated equipment, including the photo area drytek2 amtetcher stsetcher matrix Thank you, Sam ------------------------------------------------------ Samuel B. Schaevitz Lilliputian Systems, Inc. 46560 Fremont Blvd, Suite 419 Fremont, CA 94538 Cell: 617 543-5875 Office: 510 656-5999 Fax: 510 656-4999 Corporate Headquarters 25-K Olympia Ave, Suite 100 Woburn, MA 01801 Tel: 781 935-9777 Fax: 781 935-0666 From mtang at snf.stanford.edu Thu Feb 26 12:49:01 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 26 Feb 2004 12:49:01 -0800 Subject: new target for metallic References: <403B9B29.5010900@monano.com> Message-ID: <403E5BBD.E23881F4@snf.stanford.edu> Hi -- We spoke with Jeannie, Eric Perozziello, and Dick Crane. All are in agreement that as long as the target must be non-magnetic. NiCr is not magnetic, despite the high Ni content. Pure Ni, however, is magnetic, and there have been several attempts to sputter this in metalica without success. It's been attributed to the particular type of gun used in metalica. Are the AlNi and AlFe alloys you are interested in magnetic at these compositions? Mary gu wrote: > Hi All, > > Good morning! > > I want to know whether it is possible to use metallic to sputter some > alloys such as AlNi (with small percentage of Ni) and AlFe (with small > percentage of Fe). I saw a NiCr target for metallic, it means Ni can be > used in metallic. I noted that Fe Ni and Co can not be used for metallic > due to magnetic shielding, but small percentage of Fe or Ni in the alloy > could be OK. > > Your quick response will be appreciated. > > Best regards, > Gang Gu > > Senior Scientist, Ph. D > Molecular Nanosystems > 977 Commercial Street > Palo Alto, CA 94303 > Tel 650-8462598 -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From gu at monano.com Thu Feb 26 14:04:49 2004 From: gu at monano.com (gu) Date: Thu, 26 Feb 2004 14:04:49 -0800 Subject: new target for metallic References: <403B9B29.5010900@monano.com> <403E5BBD.E23881F4@snf.stanford.edu> Message-ID: <403E6D81.4040004@monano.com> Hi Mary, AlNi and AlFe alloys are NOT ferromagnetic, because the concentration of Ni and Fe is pretty low, which is around 3% at. There is no problem to get plasma on by using our targets. Best wishes, Gu Gang Mary Tang wrote: > Hi -- > > We spoke with Jeannie, Eric Perozziello, and Dick Crane. All are in > agreement that as long as the target must be non-magnetic. NiCr is not > magnetic, despite the high Ni content. Pure Ni, however, is magnetic, and > there have been several attempts to sputter this in metalica without > success. It's been attributed to the particular type of gun used in > metalica. Are the AlNi and AlFe alloys you are interested in magnetic at > these compositions? > > Mary > > gu wrote: > > >>Hi All, >> >>Good morning! >> >>I want to know whether it is possible to use metallic to sputter some >>alloys such as AlNi (with small percentage of Ni) and AlFe (with small >>percentage of Fe). I saw a NiCr target for metallic, it means Ni can be >>used in metallic. I noted that Fe Ni and Co can not be used for metallic >>due to magnetic shielding, but small percentage of Fe or Ni in the alloy >> could be OK. >> >>Your quick response will be appreciated. >> >>Best regards, >>Gang Gu >> >>Senior Scientist, Ph. D >>Molecular Nanosystems >>977 Commercial Street >>Palo Alto, CA 94303 >>Tel 650-8462598 >> > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > > From mtang at snf.stanford.edu Fri Feb 27 11:30:00 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 27 Feb 2004 11:30:00 -0800 Subject: new target for metallic References: <403B9B29.5010900@monano.com> <403E5BBD.E23881F4@snf.stanford.edu> <403E6D81.4040004@monano.com> Message-ID: <403F9AB8.16778DE4@snf.stanford.edu> Hi Gu -- As per Jim McVittie of the SpecMat committee, your request for these targets in metalica is approved. Good luck with your experiments! Mary gu wrote: > Hi Mary, > > AlNi and AlFe alloys are NOT ferromagnetic, because the concentration of > Ni and Fe is pretty low, which is around 3% at. There is no problem to > get plasma on by using our targets. > > Best wishes, > Gu Gang > > Mary Tang wrote: > > > Hi -- > > > > We spoke with Jeannie, Eric Perozziello, and Dick Crane. All are in > > agreement that as long as the target must be non-magnetic. NiCr is not > > magnetic, despite the high Ni content. Pure Ni, however, is magnetic, and > > there have been several attempts to sputter this in metalica without > > success. It's been attributed to the particular type of gun used in > > metalica. Are the AlNi and AlFe alloys you are interested in magnetic at > > these compositions? > > > > Mary > > > > gu wrote: > > > > > >>Hi All, > >> > >>Good morning! > >> > >>I want to know whether it is possible to use metallic to sputter some > >>alloys such as AlNi (with small percentage of Ni) and AlFe (with small > >>percentage of Fe). I saw a NiCr target for metallic, it means Ni can be > >>used in metallic. I noted that Fe Ni and Co can not be used for metallic > >>due to magnetic shielding, but small percentage of Fe or Ni in the alloy > >> could be OK. > >> > >>Your quick response will be appreciated. > >> > >>Best regards, > >>Gang Gu > >> > >>Senior Scientist, Ph. D > >>Molecular Nanosystems > >>977 Commercial Street > >>Palo Alto, CA 94303 > >>Tel 650-8462598 > >> > > > > -- > > Mary X. Tang, Ph.D. > > Stanford Nanofabrication Facility > > CIS Room 136, Mail Code 4070 > > Stanford, CA 94305 > > (650)723-9980 > > mtang at stanford.edu > > http://snf.stanford.edu > > > > > > > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From gu at monano.com Fri Feb 27 11:37:24 2004 From: gu at monano.com (gu) Date: Fri, 27 Feb 2004 11:37:24 -0800 Subject: new target for metallic References: <403B9B29.5010900@monano.com> <403E5BBD.E23881F4@snf.stanford.edu> <403E6D81.4040004@monano.com> <403F9AB8.16778DE4@snf.stanford.edu> Message-ID: <403F9C74.1020209@monano.com> Hi all, Thank you so much for kind assistance. Gu Gang Molecular Nanosystems 977 Commercial Street Palo Alto, CA 94303 Mary Tang wrote: > Hi Gu -- > > As per Jim McVittie of the SpecMat committee, your request for these targets in > metalica is approved. > > Good luck with your experiments! > > Mary > > gu wrote: > > >>Hi Mary, >> >>AlNi and AlFe alloys are NOT ferromagnetic, because the concentration of >>Ni and Fe is pretty low, which is around 3% at. There is no problem to >>get plasma on by using our targets. >> >>Best wishes, >>Gu Gang >> >>Mary Tang wrote: >> >> >>>Hi -- >>> >>>We spoke with Jeannie, Eric Perozziello, and Dick Crane. All are in >>>agreement that as long as the target must be non-magnetic. NiCr is not >>>magnetic, despite the high Ni content. Pure Ni, however, is magnetic, and >>>there have been several attempts to sputter this in metalica without >>>success. It's been attributed to the particular type of gun used in >>>metalica. Are the AlNi and AlFe alloys you are interested in magnetic at >>>these compositions? >>> >>>Mary >>> >>>gu wrote: >>> >>> >>> >>>>Hi All, >>>> >>>>Good morning! >>>> >>>>I want to know whether it is possible to use metallic to sputter some >>>>alloys such as AlNi (with small percentage of Ni) and AlFe (with small >>>>percentage of Fe). I saw a NiCr target for metallic, it means Ni can be >>>>used in metallic. I noted that Fe Ni and Co can not be used for metallic >>>>due to magnetic shielding, but small percentage of Fe or Ni in the alloy >>>> could be OK. >>>> >>>>Your quick response will be appreciated. >>>> >>>>Best regards, >>>>Gang Gu >>>> >>>>Senior Scientist, Ph. D >>>>Molecular Nanosystems >>>>977 Commercial Street >>>>Palo Alto, CA 94303 >>>>Tel 650-8462598 >>>> >>>> >>>-- >>>Mary X. Tang, Ph.D. >>>Stanford Nanofabrication Facility >>>CIS Room 136, Mail Code 4070 >>>Stanford, CA 94305 >>>(650)723-9980 >>>mtang at stanford.edu >>>http://snf.stanford.edu >>> >>> >>> >>> >>> > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > > >