From thaniff at keyotee.com Wed Jan 7 12:41:15 2004 From: thaniff at keyotee.com (thaniff at keyotee.com) Date: 7 Jan 2004 20:41:15 -0000 Subject: Clean Si fusion Bonding Message-ID: <20040107204115.25049.qmail@ns6.webmasters.com> Dear Specmat members, I would like to do some si fusion bonding in a vacuum ambient. The general process outline is: 1. Etch Cavity inta a bulk or SOI wafer. 2. Perfom pre bond clean Sulfuric, RCA1, and RCA2. 3. Bond to another bulk or SOI wafer in a vacuum environment. 4. Thin down (grind and polish) the non-cavity side of the wafer. 5. Pattern and etch (in STS) the non cavity side of the wafer. I'd like to know what the current options are for this process in the SNF. Best Regards, -Tariq From mtang at snf.stanford.edu Wed Jan 7 12:52:31 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 07 Jan 2004 12:52:31 -0800 Subject: Clean Si fusion Bonding References: <20040107204115.25049.qmail@ns6.webmasters.com> Message-ID: <3FFC718F.9D6B0BC7@snf.stanford.edu> Hi Tariq -- I'm sure Mahnaz and Colby will have more insight on this -- but I don't believe we have the capability to do Si fusion bonding in a vacuum environment. Pre-bonding (i.e., just touching two wafer together) can be done in the vacuum environment of the bonder, but I really don't know if you can simply take the wafers out and place them in a furnace and maintain vacuum (have you done this? I don't have Si-Si bonding experience -- and when I've done glass-Si vacuum bonding, it's been in a vacuum furnace...) How long does the thermal part of your Si-Si fusion bond process take? Also, grinding/polishing are dirty processes and the STS is considered a clean system. I believe there are certain required clean protocols following grinding/polishing which may allow something to return to some clean systems in the lab (Jim, didn't you work this out already?). Mary thaniff at keyotee.com wrote: > Dear Specmat members, > > I would like to do some si fusion bonding in a vacuum ambient. > > The general process outline is: > > 1. Etch Cavity inta a bulk or SOI wafer. > 2. Perfom pre bond clean Sulfuric, RCA1, and RCA2. > 3. Bond to another bulk or SOI wafer in a vacuum environment. > 4. Thin down (grind and polish) the non-cavity side of the wafer. > 5. Pattern and etch (in STS) the non cavity side of the wafer. > > I'd like to know what the current options are for this process in the SNF. > > Best Regards, > > -Tariq -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From bleen at stanford.edu Thu Jan 8 13:28:51 2004 From: bleen at stanford.edu (J. Brian Leen) Date: Thu, 8 Jan 2004 13:28:51 -0800 Subject: Baby Oil approval for use in SNF cleanroom Message-ID: 1. Requestor: Brian Leen 2. Phone: 5.3301 3. bleen at stanford.edu 4. Advisor: Lambertus Hesselink 5. Chemical Name(s): Baby Oil, Mineral Oil 6. The chemical will be used in conjunction with HF 49%. 7. Johnson & Johnson 8. http://www.johnsonsbaby.com/products/oil/baby-oil 9. See MSDS. 10. The process goal is to etch optical fibers to a fine point. The oil will be used to form a limited meniscus in the HF and to protect the rest of the fiber from acid vapors. See attached papers for more details. 11. To my knowledge, no other oils with known prosperities in this situation are approved (fomblin oil is the only other approved oil and is not desirable). 12. This will be used at WBGeneral and residual oil will be cleaned off at WBSolvent. 13. Quantity will be ~14oz bottle. 14. State is liquid. 15. No mixing is required. 16. MSDS @ http://stanford.chemquik.com/default.asp?LinkNum=DOL%2E239303 17. NA 18. NA 19. No special storage required 20. Disposal will be down the HF drain. 21. Attached -------------- next part -------------- A non-text attachment was scrubbed... Name: Method to produce high-resolution scanning near-field optical microscope probes.pdf Type: application/pdf Size: 1045993 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: Chemically etched fiber tips for near-field optical microscopy.pdf Type: application/pdf Size: 262994 bytes Desc: not available URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: HF-Oil tip etch process.doc Type: application/msword Size: 24064 bytes Desc: not available URL: From mtang at snf.stanford.edu Thu Jan 8 16:19:27 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 08 Jan 2004 16:19:27 -0800 Subject: Baby Oil approval for use in SNF cleanroom References: Message-ID: <3FFDF38F.A2D1ACC1@snf.stanford.edu> Hi all -- I spoke with Brian about this. He's talking about adding a drop or two of baby oil to float a thin film on top of 49% HF. The purpose is to etch tip of his fiberoptic while preventing fumes from corroding the rest of it -- pretty clever. Since HF isn't an oxidizer, and because he's using a miniscule amount, (the container will be very small) I think it should be OK to pour this down the HF drain. He will rinse several times, pouring this down the HF drain, and then rinse the container with acetone at wbsolvent to remove traces of baby oil. Does this sound OK to you? Mary "J. Brian Leen" wrote: > 1. Requestor: Brian Leen > 2. Phone: 5.3301 > 3. bleen at stanford.edu > 4. Advisor: Lambertus Hesselink > > 5. Chemical Name(s): Baby Oil, Mineral Oil > 6. The chemical will be used in conjunction with HF 49%. > 7. Johnson & Johnson > 8. http://www.johnsonsbaby.com/products/oil/baby-oil > 9. See MSDS. > 10. The process goal is to etch optical fibers to a fine point. The oil > will be used to form a limited meniscus in the HF and to protect the rest of > the fiber from acid vapors. See attached papers for more details. > 11. To my knowledge, no other oils with known prosperities in this situation > are approved (fomblin oil is the only other approved oil and is not > desirable). > 12. This will be used at WBGeneral and residual oil will be cleaned off at > WBSolvent. > 13. Quantity will be ~14oz bottle. > 14. State is liquid. > 15. No mixing is required. > 16. MSDS @ http://stanford.chemquik.com/default.asp?LinkNum=DOL%2E239303 > 17. NA > 18. NA > 19. No special storage required > 20. Disposal will be down the HF drain. > 21. Attached > > ------------------------------------------------------------------------ > Name: Method to produce high-resolution scanning near-field optical microscope probes.pdf > Method to produce high-resolution scanning near-field optical microscope probes.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: Chemically etched fiber tips for near-field optical microscopy.pdf > Chemically etched fiber tips for near-field optical microscopy.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: HF-Oil tip etch process.doc > HF-Oil tip etch process.doc Type: WINWORD File (application/msword) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Fri Jan 9 11:33:16 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 09 Jan 2004 11:33:16 -0800 Subject: Post-grind and CMP clean Message-ID: <3FFF01FC.BD998CF4@snf.stanford.edu> Hi all -- There are at least two groups that seem to do CMP or wafer grinding outside and then clean their wafers so that they can be processed in "clean" equipment in our lab. I know many emails have gone back and forth as to possible concerns about particles, above and beyond the alkali and metal ion contamination... but was there ever a final decision on procedures? We're getting a couple more requests now (such as Tariq's from earlier this week.) What do you all think? Mary -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mtang at snf.stanford.edu Fri Jan 9 11:45:21 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 09 Jan 2004 11:45:21 -0800 Subject: Baby Oil approval for use in SNF cleanroom References: Message-ID: <3FFF04D1.F88FAA77@snf.stanford.edu> Hi Brian -- I spoke with Mahnaz and we agreed that your request is hereby approved (assuming that you're using only a thin film of oil.) Good luck! Mary "J. Brian Leen" wrote: > 1. Requestor: Brian Leen > 2. Phone: 5.3301 > 3. bleen at stanford.edu > 4. Advisor: Lambertus Hesselink > > 5. Chemical Name(s): Baby Oil, Mineral Oil > 6. The chemical will be used in conjunction with HF 49%. > 7. Johnson & Johnson > 8. http://www.johnsonsbaby.com/products/oil/baby-oil > 9. See MSDS. > 10. The process goal is to etch optical fibers to a fine point. The oil > will be used to form a limited meniscus in the HF and to protect the rest of > the fiber from acid vapors. See attached papers for more details. > 11. To my knowledge, no other oils with known prosperities in this situation > are approved (fomblin oil is the only other approved oil and is not > desirable). > 12. This will be used at WBGeneral and residual oil will be cleaned off at > WBSolvent. > 13. Quantity will be ~14oz bottle. > 14. State is liquid. > 15. No mixing is required. > 16. MSDS @ http://stanford.chemquik.com/default.asp?LinkNum=DOL%2E239303 > 17. NA > 18. NA > 19. No special storage required > 20. Disposal will be down the HF drain. > 21. Attached > > ------------------------------------------------------------------------ > Name: Method to produce high-resolution scanning near-field optical microscope probes.pdf > Method to produce high-resolution scanning near-field optical microscope probes.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: Chemically etched fiber tips for near-field optical microscopy.pdf > Chemically etched fiber tips for near-field optical microscopy.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: HF-Oil tip etch process.doc > HF-Oil tip etch process.doc Type: WINWORD File (application/msword) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From mcvittie at snf.stanford.edu Mon Jan 12 15:08:46 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Mon, 12 Jan 2004 15:08:46 -0800 Subject: Post-grind and CMP clean References: <3FFF01FC.BD998CF4@snf.stanford.edu> Message-ID: <400328FE.2CF43F6D@snf.stanford.edu> Mary, My understanding is that if there are any particles on the wafers, they have to go through the cleaning procedure put together by Theresa Kramer back in 1998. If there are no particles, they must go the post KOH clean. Jim Mary Tang wrote: > Hi all -- > > There are at least two groups that seem to do CMP or wafer grinding > outside and then clean their wafers so that they can be processed in > "clean" equipment in our lab. I know many emails have gone back and > forth as to possible concerns about particles, above and beyond the > alkali and metal ion contamination... but was there ever a final > decision on procedures? We're getting a couple more requests now (such > as Tariq's from earlier this week.) What do you all think? > > Mary > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu -------------- next part -------------- CMP Cleanup Procedure Theresa Kramer April 1998 Starting wafers: 4" silicon with thermal oxide and LTO, nonmetal CMP: Rodel pad Q1400 (used for ICs), Rodel slurry ILD1200 (KOH based, silica particle abrasive) at San Jose State Clean: SC1 clean * H2O:H2O2:NH4OH 5:1:1 10 min, running DI 5 min at wbgeneral in clean, nonmetal glassware (better to have this done at San Jose State before the wafers dry, but if you cannot, possibly transport wafers still wet back to Stanford). This step leaves slurry residue and silica particles. If they are dry, they are much more difficult to remove. Inspect wafers under dark field to see the particulates for later comparison if they were allowed to dry. Scrub wafer front and back with polyvinyl alcohol (PVA) sponge in 2mm sheet form in clean glassware at wbgeneral. PVA sponge available from Rippey. I put one sheet at bottom of large beaker filled with DI, then the wafer, then used a second sheet folded to scrub the surface of the wafer for several minutes. The bottom sheet is to avoid scratching. The wafer should be flipped and scrubbed on both sides. Follow with DI rinse. Make sure to use clean gloves as they are in contact with the PVA sponge in the DI in contact with the wafer. Inspect wafers under dark field to confirm particulates have been removed. KOH cleanup (standard) * H2O:H2O2:HCl 5:1:1 20 minutes in clean, nonmetal quartzware at wbgeneral, DI rinse 5 min. Wafers may now return to mainline equipment. -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From patlu at stanford.edu Thu Jan 22 17:07:01 2004 From: patlu at stanford.edu (Patrick Lu) Date: Thu, 22 Jan 2004 17:07:01 -0800 Subject: STS and gold-containing samples Message-ID: <200401230107.i0N173s1014969@smtp2.Stanford.EDU> Hi, I have some chips that have been flip-chip bonded, where the bond junction is formed by Au-Au contacts. I was wondering if I could use the STS to etch these samples ( I know the new STS isn't quite up and running yet). The gold is completely buried by photoresist, and only silicon and SiO2 surfaces will be exposed. If anyone can advise me on this, that would be great! Thanks, Patrick Lu -------------- next part -------------- An HTML attachment was scrubbed... URL: From cschaper at stanford.edu Thu Jan 22 17:49:44 2004 From: cschaper at stanford.edu (Charles D Schaper) Date: Thu, 22 Jan 2004 17:49:44 -0800 (PST) Subject: special materials request Message-ID: Tze Wee Chen submitted an application around Aug, 2002, to use the material in the attached MSDS, a mixture of alcohols. Another student, Hiro, would also like to use this material, but we didn't see it listed in the data base of accepted materials. We would like to conduct the experiments as soon as possible, and would appreciate your attention to this matter. We will repeat the application just in case Tze Wee's application was misplaced, but I believe there was some communication approving the material: 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. email address: hatogai at stanford.edu 4. Requstors PI: Professor R. Fabian W. Pease 5. Name of new chemical: Partall Film #10 6. No other materials 7. Name of vendor: Fiberlay, Inc. 8. www.fiberlay.com 9. 2425 NW Market St., Seattle WA 98107 1-800-942-0660 10. Surface coating that is water soluble 11. No other material exists that can form as strong soluble films 12. Drytek2, headway, nanospec, ellipsometer, semhitachi 13. 1 pint 14. liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. Material is water soluble and can be poured down drain 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, (2) Detach dried film from silicon wafer, (3) Spin-coat resist onto dried film (4) Etch resist and dried film in drytek2 (5) Measure film thickness using nanospec, ellipsometer (6) Measure cross section in semhitachi -------------- next part -------------- A non-text attachment was scrubbed... Name: PartallFilm254Q.pdf Type: application/pdf Size: 145295 bytes Desc: URL: From mtang at snf.stanford.edu Fri Jan 23 08:37:11 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Fri, 23 Jan 2004 08:37:11 -0800 Subject: special materials request References: Message-ID: <40114DB7.F31BF992@snf.stanford.edu> Hi Charles -- I'm sorry, but we don't seem to have a record of Tze Wee ever submitting a request for PVA, at least not to specmat at snf -- I hope this has not caused a serious delay in your experiments... PVA has been approved for use in the lab, but we still like to see requests and MSDS sheets since, as you know, there are so many formulations and some are not as benign as yours. Also, I still have a couple of questions regarding your process flow, and if you could correct/clarify, it would be much appreciated. I take it that your process is: headway spin/cure on a hotplate etch substrate in drytek2 analyze on nanospec, ellipsometer, semhitachi do you plan on stripping the PVA? I take it that this will be at wbgeneral? If this is, indeed the case, then I take it that we will not have to worry about disposal (waste from the headway will be taken up in foil and disposed of in the hazardous waste can; if you strip at wbgeneral, presumably the PVA will be so dilute it will not pose a hazard.) The concern is that although your PVA formulation is pretty benign by Palo Alto waste standards, our drains at SNF are used for oxidizing chemicals (which are neutralized in the AWN.) PVA and the diluting alcohols are flammables and should not come into contact with oxidizers. However, if the amounts you are using are very small (i.e., whatever is cured on top of a wafer), then it shouldn't be a problem (one pint down the drain might be, however.) The final concern would be that the PVA should not outgas in the semhitachi (it should be subject to the same softbake required for resists.) If this is the case, and there are no additional concerns from the other specmat members, then I'd say your PVA is approved. Please see Mahnaz about getting a yellow sticker to store your PVA. Mary Charles D Schaper wrote: > Tze Wee Chen submitted an application around Aug, 2002, to use > the material in the attached MSDS, a mixture of alcohols. Another > student, Hiro, would also like to use this material, but we didn't > see it listed in the data base of accepted materials. We would > like to conduct the experiments as soon as possible, and would > appreciate your attention to this matter. We will repeat the > application just in case Tze Wee's application was misplaced, but > I believe there was some communication approving the material: > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. email address: hatogai at stanford.edu > 4. Requstors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: Partall Film #10 > 6. No other materials > 7. Name of vendor: Fiberlay, Inc. > 8. www.fiberlay.com > 9. 2425 NW Market St., Seattle WA 98107 1-800-942-0660 > 10. Surface coating that is water soluble > 11. No other material exists that can form as strong soluble films > 12. Drytek2, headway, nanospec, ellipsometer, semhitachi > 13. 1 pint > 14. liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. Material is water soluble and can be poured down drain > 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, > (2) Detach dried film from silicon wafer, > (3) Spin-coat resist onto dried film > (4) Etch resist and dried film in drytek2 > (5) Measure film thickness using nanospec, ellipsometer > (6) Measure cross section in semhitachi > > ------------------------------------------------------------------------ > Name: PartallFilm254Q.pdf > PartallFilm254Q.pdf Type: Portable Document Format (APPLICATION/PDF) > Encoding: BASE64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From cschaper at stanford.edu Sat Jan 24 09:45:37 2004 From: cschaper at stanford.edu (Charles D Schaper) Date: Sat, 24 Jan 2004 09:45:37 -0800 (PST) Subject: special materials request In-Reply-To: <40114DB7.F31BF992@snf.stanford.edu> Message-ID: Mary, I would like to thank you for the fast evaluation of our request. It was informative as well. We will use small amounts of PVA for spin-coating on headway and will dispose of the excess material in the usual way, that is wrapping in aluminum foil. Eventually we will strip the PVA by placing in water, and would therefore add wbgeneral to the equipment list. A bake of the PVA film will be included to take into account possible outgassing issues. We will measure this ultimately. Best, chuck On Fri, 23 Jan 2004, Mary Tang wrote: > Hi Charles -- > > I'm sorry, but we don't seem to have a record of Tze Wee ever submitting a request > for PVA, at least not to specmat at snf -- I hope this has not caused a serious delay in > your experiments... > > PVA has been approved for use in the lab, but we still like to see requests and MSDS > sheets since, as you know, there are so many formulations and some are not as benign > as yours. > > Also, I still have a couple of questions regarding your process flow, and if you > could correct/clarify, it would be much appreciated. I take it that your process is: > > headway spin/cure on a hotplate > etch substrate in drytek2 > analyze on nanospec, ellipsometer, semhitachi > do you plan on stripping the PVA? I take it that this will be at wbgeneral? > > If this is, indeed the case, then I take it that we will not have to worry about > disposal (waste from the headway will be taken up in foil and disposed of in the > hazardous waste can; if you strip at wbgeneral, presumably the PVA will be so dilute > it will not pose a hazard.) The concern is that although your PVA formulation is > pretty benign by Palo Alto waste standards, our drains at SNF are used for oxidizing > chemicals (which are neutralized in the AWN.) PVA and the diluting alcohols are > flammables and should not come into contact with oxidizers. However, if the amounts > you are using are very small (i.e., whatever is cured on top of a wafer), then it > shouldn't be a problem (one pint down the drain might be, however.) > > The final concern would be that the PVA should not outgas in the semhitachi (it > should be subject to the same softbake required for resists.) > > If this is the case, and there are no additional concerns from the other specmat > members, then I'd say your PVA is approved. Please see Mahnaz about getting a yellow > sticker to store your PVA. > > Mary > > > Charles D Schaper wrote: > > > Tze Wee Chen submitted an application around Aug, 2002, to use > > the material in the attached MSDS, a mixture of alcohols. Another > > student, Hiro, would also like to use this material, but we didn't > > see it listed in the data base of accepted materials. We would > > like to conduct the experiments as soon as possible, and would > > appreciate your attention to this matter. We will repeat the > > application just in case Tze Wee's application was misplaced, but > > I believe there was some communication approving the material: > > > > 1. Requestor name: Tetsuhiro Hatogai > > 2. Phone number: 650-799-5366 > > 3. email address: hatogai at stanford.edu > > 4. Requstors PI: Professor R. Fabian W. Pease > > 5. Name of new chemical: Partall Film #10 > > 6. No other materials > > 7. Name of vendor: Fiberlay, Inc. > > 8. www.fiberlay.com > > 9. 2425 NW Market St., Seattle WA 98107 1-800-942-0660 > > 10. Surface coating that is water soluble > > 11. No other material exists that can form as strong soluble films > > 12. Drytek2, headway, nanospec, ellipsometer, semhitachi > > 13. 1 pint > > 14. liquid > > 15. No chemical is needed to mix it > > 16. Please see attached > > 17. Will not be used in the clean area > > 18. Storage group identifier = L, Main Hazard Class = 6 > > 19. Should be enough room > > 20. Material is water soluble and can be poured down drain > > 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, > > (2) Detach dried film from silicon wafer, > > (3) Spin-coat resist onto dried film > > (4) Etch resist and dried film in drytek2 > > (5) Measure film thickness using nanospec, ellipsometer > > (6) Measure cross section in semhitachi > > > > ------------------------------------------------------------------------ > > Name: PartallFilm254Q.pdf > > PartallFilm254Q.pdf Type: Portable Document Format (APPLICATION/PDF) > > Encoding: BASE64 > > Download Status: Not downloaded with message > > -- > Mary X. Tang, Ph.D. > National Nanofabrication Users' Network > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > > From hatogai at stanford.edu Sun Jan 25 22:31:24 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Sun, 25 Jan 2004 22:31:24 -0800 Subject: New Material registering request [Zipcone] Message-ID: <000101c3e3d6$08467e90$6500a8c0@toshibauser> Dear Sir or Madam: Here is the application for new material, Zipcone. I attached the scanned MSDS for the material. Here is the information for the material required by following website. http://snf.stanford.edu/Materials/NewMatProc.html 1. Requestor name: Tetsuhiro Hatogai 2. Phone number: 650-799-5366 3. Email address: hatogai at stanford.edu 4. Requestors PI: Professor R. Fabian W. Pease 5. Name of new chemical: Zipcone U Series 6. No other materials 7. Name of vendor: Gelest, Inc. 8. www.gelest.com 9. 11 East Steel Road, Morrisville, PA 19067 10. Curable spin-on silicone 11. Inexpensive silicon containing material comparable with PVA 20. Headway spin-on material would be wrapped in aluminum foil and disposed 21. Replace "resist" with "zipcone" 12. Drytek2, headway, nanospec, ellipsometer, semhitachi 13. 100 grams 14. Liquid 15. No chemical is needed to mix it 16. Please see attached 17. Will not be used in the clean area 18. Storage group identifier = L, Main Hazard Class = 6 19. Should be enough room 20. Material is water soluble and can be poured down drain 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, (2) Detach dried film from silicon wafer, (3) Spin-coat resist onto dried film (4) Etch resist and dried film in drytek2 (5) Measure film thickness using nanospec, ellipsometer (6) Measure cross section in semhitachi Please find the detailed process flow in attached file. 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Name: MSDS p3.JPG Type: image/jpeg Size: 70004 bytes Desc: not available URL: From mtang at snf.stanford.edu Mon Jan 26 07:28:05 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Mon, 26 Jan 2004 07:28:05 -0800 Subject: New Material registering request [Zipcone] References: <000101c3e3d6$08467e90$6500a8c0@toshibauser> Message-ID: <40153204.AB2E3ECB@snf.stanford.edu> Hi Tetsushiro -- I'm responding to your request, although this is really in Mahnaz's area and she should have the final word... I've two concerns. First, is fumes. This looks like conventional RTV formulation, but UV-curable -- which means it generates acetic acid fumes on curing and should be used in a well-ventilated area. The headway is a well-ventilated area (provided proper procedures are followed). But the aligners are not (the air in the litho area outside of the hoods is recirculated to >90%). Do you plan to use the aligners for UV-cure? If so, we need to talk. Basically, we need to make sure that prior to curing that this material doesn't generate fumes in the lab outside the exhausted areas... Second, is that the stuff gets everywhere... Handling is very important and being able to clean up any spills, smears, etc. is important. Spin chucks will need to be cleaned. And any labware that the substrates come into contact with (unless you provide your own.) Lastly, I don't know of anyone who has etched RTV silicone in the drytek2, but would be interested in your results. I do know of a group that etches silicone elastomer (PDMS) with some success, so would suggest that if you don't already have a recipe, that you contact them (let me know -- I've got the contact info somewhere...) Oh, and one more question. How often do you plan to use this? If you plan to use this routinely, then you will need a yellow tag from Mahnaz to store it in the lab. If it is a one-time evaluation, we'd much prefer that you keep this in your own lab (as personal chemical storage is limited at SNF.) Thanks! Mary "Tetsuhiro (Hiro) Hatogai" wrote: > Dear Sir or Madam: > > Here is the application for new material, Zipcone. > I attached the scanned MSDS for the material. > > Here is the information for the material required by following website. > http://snf.stanford.edu/Materials/NewMatProc.html > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. Email address: hatogai at stanford.edu > 4. Requestors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: Zipcone U Series > 6. No other materials > 7. Name of vendor: Gelest, Inc. > 8. www.gelest.com > 9. 11 East Steel Road, Morrisville, PA 19067 > 10. Curable spin-on silicone > 11. Inexpensive silicon containing material comparable with PVA 20. > Headway spin-on material would be wrapped in aluminum foil and > disposed 21. > Replace "resist" with "zipcone" > 12. Drytek2, headway, nanospec, ellipsometer, semhitachi > 13. 100 grams > 14. Liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. Material is water soluble and can be poured down drain > 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, > (2) Detach dried film from silicon wafer, > (3) Spin-coat resist onto dried film > (4) Etch resist and dried film in drytek2 > (5) Measure film thickness using nanospec, ellipsometer > (6) Measure cross section in semhitachi > Please find the detailed process flow in attached file. > > Sincerely, > Tetsuhiro Hatogai (Hiro) > > ------------------------------------------------------------------------ > Name: Expreiment Flow.pdf > Expreiment Flow.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message > > Name: MSDS p1.JPG > MSDS p1.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: MSDS p2.JPG > MSDS p2.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 > > Name: MSDS p3.JPG > MSDS p3.JPG Type: JPEG Image (image/jpeg) > Encoding: base64 -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kenney at SLAC.Stanford.EDU Tue Jan 27 01:07:38 2004 From: kenney at SLAC.Stanford.EDU (Chris Kenney) Date: Tue, 27 Jan 2004 01:07:38 -0800 (PST) Subject: DI/Ethanol/HF Request Message-ID: Dear SpecMat, Our group would like to develop a photo-assisted, electro- chemical etch process for making high-aspect ratio holes in silicon substrates. The basic setup involves a container which holds the silicon wafer against a window on one side. This is sealed using an O-ring. One side of the wafer will be exposed to the etching solution and the other side to the ambient air and a light source. The entire apparatus will be set inside a secondary containment basin. This basin in turn would be inside the sink at the wet bench. So there would be 3 levels of nested containers for the solution. Electrical contact is also made to the air-side of the wafer. There are two platinum electrodes immersed in the solution iside the container: a reference electrode and a field electrode. In use, a potential of about 1 Volt will be applied between the field electrode and the silicon wafer. We expect total electrical currents used in the system to be less than 100 milliAmperes. The power source will have current and Voltage limits set near these values for safety. The power source is a Keitheley 2400 source meter. It would be located away from the interior of the wet bench and close to the floor to avoid a fall hazard. The solution will consist of approximately 75% water and 25% ethanol with a small amount of HF. The typical HF concentration would be between 4% and 6% by weight. It seems that the unusual aspect of this request is the use of a mixture containing both an acid and a solvent. I'm unsure of the best method for disposing of this solution after use. We feel the most appropriate location for this set up is the GaAs wet bench. We would use less than half of the bench and would remove our set up when it wasn't in use to avoid getting in the way of other users. We welcome all suggestions and comments on the best way to proceed. Feel free to ask any questions. We would like permission to use the GaAs wet bench for this work. Thanks for your help. Chris From hatogai at stanford.edu Tue Jan 27 15:09:36 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Tue, 27 Jan 2004 15:09:36 -0800 Subject: special materials request [PVA] In-Reply-To: <40114DB7.F31BF992@snf.stanford.edu> Message-ID: <000001c3e52a$a54fbf80$7a5e40ab@toshibauser> Hi Mary, Thanks for the prompt response. Initially we are going to use Drytek2 for PVA and compare its property with some other general photo resist. For a while, we are NOT going to use i) Headway (We do spincoating outside SNF) ii) Aligner (We do UV care outside SNF) Before using SEM, we bake the material to be free from outgas in hitachisem chamber. Again, for a while, we only need to use Drytek2. Finally, we really appreciate if you give me the contact information for the group that uses PDMS. Thanks in advance, Hiro (Tetsuhiro Hatogai) -----Original Message----- From: Mary Tang [mailto:mtang at snf.stanford.edu] Sent: Friday, January 23, 2004 8:37 AM To: Charles D Schaper Cc: specmat at snf.stanford.edu; hatogai at stanford.edu; pease at cis.Stanford.EDU Subject: Re: special materials request Hi Charles -- I'm sorry, but we don't seem to have a record of Tze Wee ever submitting a request for PVA, at least not to specmat at snf -- I hope this has not caused a serious delay in your experiments... PVA has been approved for use in the lab, but we still like to see requests and MSDS sheets since, as you know, there are so many formulations and some are not as benign as yours. Also, I still have a couple of questions regarding your process flow, and if you could correct/clarify, it would be much appreciated. I take it that your process is: headway spin/cure on a hotplate etch substrate in drytek2 analyze on nanospec, ellipsometer, semhitachi do you plan on stripping the PVA? I take it that this will be at wbgeneral? If this is, indeed the case, then I take it that we will not have to worry about disposal (waste from the headway will be taken up in foil and disposed of in the hazardous waste can; if you strip at wbgeneral, presumably the PVA will be so dilute it will not pose a hazard.) The concern is that although your PVA formulation is pretty benign by Palo Alto waste standards, our drains at SNF are used for oxidizing chemicals (which are neutralized in the AWN.) PVA and the diluting alcohols are flammables and should not come into contact with oxidizers. However, if the amounts you are using are very small (i.e., whatever is cured on top of a wafer), then it shouldn't be a problem (one pint down the drain might be, however.) The final concern would be that the PVA should not outgas in the semhitachi (it should be subject to the same softbake required for resists.) If this is the case, and there are no additional concerns from the other specmat members, then I'd say your PVA is approved. Please see Mahnaz about getting a yellow sticker to store your PVA. Mary Charles D Schaper wrote: > Tze Wee Chen submitted an application around Aug, 2002, to use > the material in the attached MSDS, a mixture of alcohols. Another > student, Hiro, would also like to use this material, but we didn't > see it listed in the data base of accepted materials. We would > like to conduct the experiments as soon as possible, and would > appreciate your attention to this matter. We will repeat the > application just in case Tze Wee's application was misplaced, but > I believe there was some communication approving the material: > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. email address: hatogai at stanford.edu > 4. Requstors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: Partall Film #10 > 6. No other materials > 7. Name of vendor: Fiberlay, Inc. > 8. www.fiberlay.com > 9. 2425 NW Market St., Seattle WA 98107 1-800-942-0660 > 10. Surface coating that is water soluble > 11. No other material exists that can form as strong soluble films > 12. Drytek2, headway, nanospec, ellipsometer, semhitachi > 13. 1 pint > 14. liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. Material is water soluble and can be poured down drain > 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, > (2) Detach dried film from silicon wafer, > (3) Spin-coat resist onto dried film > (4) Etch resist and dried film in drytek2 > (5) Measure film thickness using nanospec, ellipsometer > (6) Measure cross section in semhitachi > > ------------------------------------------------------------------------ > Name: PartallFilm254Q.pdf > PartallFilm254Q.pdf Type: Portable Document Format (APPLICATION/PDF) > Encoding: BASE64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From hatogai at stanford.edu Tue Jan 27 15:16:20 2004 From: hatogai at stanford.edu (Tetsuhiro (Hiro) Hatogai) Date: Tue, 27 Jan 2004 15:16:20 -0800 Subject: special materials request [Zipcone] In-Reply-To: <000001c3e52a$a54fbf80$7a5e40ab@toshibauser> Message-ID: <000101c3e52b$95b705a0$7a5e40ab@toshibauser> Hi Mary, Thanks for the prompt response. Here is the reply regarding to Zipcone. In the previous email, I wrote about UV curing for PVA, actually it does not need UV cure. Sorry for mixed up. But Zipcone do need UV cure. Overall the answer is very similar to that of PVA. Initially we are going to use Drytek2 for Zipcone and compare its property with some other general photo resist. For a while, we are NOT going to use i) Headway (We do spincoating outside SNF) ii) Aligner (We do UV care outside SNF) Before using SEM, we bake the material to be free from outgas in hitachisem chamber. Again, for a while, we only need to use Drytek2. Finally, we really appreciate if you give me the contact information for the group that uses PDMS. Thanks in advance, Hiro (Tetsuhiro Hatogai) -----Original Message----- From: Mary Tang [mailto:mtang at snf.stanford.edu] Sent: Friday, January 23, 2004 8:37 AM To: Charles D Schaper Cc: specmat at snf.stanford.edu; hatogai at stanford.edu; pease at cis.Stanford.EDU Subject: Re: special materials request Hi Charles -- I'm sorry, but we don't seem to have a record of Tze Wee ever submitting a request for PVA, at least not to specmat at snf -- I hope this has not caused a serious delay in your experiments... PVA has been approved for use in the lab, but we still like to see requests and MSDS sheets since, as you know, there are so many formulations and some are not as benign as yours. Also, I still have a couple of questions regarding your process flow, and if you could correct/clarify, it would be much appreciated. I take it that your process is: headway spin/cure on a hotplate etch substrate in drytek2 analyze on nanospec, ellipsometer, semhitachi do you plan on stripping the PVA? I take it that this will be at wbgeneral? If this is, indeed the case, then I take it that we will not have to worry about disposal (waste from the headway will be taken up in foil and disposed of in the hazardous waste can; if you strip at wbgeneral, presumably the PVA will be so dilute it will not pose a hazard.) The concern is that although your PVA formulation is pretty benign by Palo Alto waste standards, our drains at SNF are used for oxidizing chemicals (which are neutralized in the AWN.) PVA and the diluting alcohols are flammables and should not come into contact with oxidizers. However, if the amounts you are using are very small (i.e., whatever is cured on top of a wafer), then it shouldn't be a problem (one pint down the drain might be, however.) The final concern would be that the PVA should not outgas in the semhitachi (it should be subject to the same softbake required for resists.) If this is the case, and there are no additional concerns from the other specmat members, then I'd say your PVA is approved. Please see Mahnaz about getting a yellow sticker to store your PVA. Mary Charles D Schaper wrote: > Tze Wee Chen submitted an application around Aug, 2002, to use > the material in the attached MSDS, a mixture of alcohols. Another > student, Hiro, would also like to use this material, but we didn't > see it listed in the data base of accepted materials. We would > like to conduct the experiments as soon as possible, and would > appreciate your attention to this matter. We will repeat the > application just in case Tze Wee's application was misplaced, but > I believe there was some communication approving the material: > > 1. Requestor name: Tetsuhiro Hatogai > 2. Phone number: 650-799-5366 > 3. email address: hatogai at stanford.edu > 4. Requstors PI: Professor R. Fabian W. Pease > 5. Name of new chemical: Partall Film #10 > 6. No other materials > 7. Name of vendor: Fiberlay, Inc. > 8. www.fiberlay.com > 9. 2425 NW Market St., Seattle WA 98107 1-800-942-0660 > 10. Surface coating that is water soluble > 11. No other material exists that can form as strong soluble films > 12. Drytek2, headway, nanospec, ellipsometer, semhitachi > 13. 1 pint > 14. liquid > 15. No chemical is needed to mix it > 16. Please see attached > 17. Will not be used in the clean area > 18. Storage group identifier = L, Main Hazard Class = 6 > 19. Should be enough room > 20. Material is water soluble and can be poured down drain > 21. Process Flow: (1) Spin-coat on a silicon wafer using headway, > (2) Detach dried film from silicon wafer, > (3) Spin-coat resist onto dried film > (4) Etch resist and dried film in drytek2 > (5) Measure film thickness using nanospec, ellipsometer > (6) Measure cross section in semhitachi > > ------------------------------------------------------------------------ > Name: PartallFilm254Q.pdf > PartallFilm254Q.pdf Type: Portable Document Format (APPLICATION/PDF) > Encoding: BASE64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. National Nanofabrication Users' Network Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From latta at snf.stanford.edu Wed Jan 28 15:35:37 2004 From: latta at snf.stanford.edu (Nancy Latta) Date: Wed, 28 Jan 2004 15:35:37 -0800 Subject: [Fwd: FGA Anneal] Message-ID: <40184749.8060806@snf.stanford.edu> What do you folks think? -- --- Nancy Latta Stanford Nanofabrication Facility CIS Bldg, 145 420 Via Palou Mall Stanford, CA, 94305 - 4070 (650) 725-6727 Fax (650) 725-6278 -------------- next part -------------- An embedded message was scrubbed... From: "Ragesh Puthenkovilakam" Subject: FGA Anneal Date: Thu, 22 Jan 2004 17:45:11 -0800 Size: 1762 URL: From masafumi at stanford.edu Fri Jan 30 12:08:41 2004 From: masafumi at stanford.edu (masa) Date: Fri, 30 Jan 2004 12:08:41 -0800 Subject: New materials request Message-ID: <20040130105656.7EEC.MASAFUMI@stanford.edu> Dear Special Materials Committee, I'd like to request to use new materials in CIS. Here is information below. Requestor name: Masafumi Nakamura Phone number: 6507259936 email address: masafumi at stanford.edu Requestor?s PI (Advisor) or Company: Prof. Prinz The name of the new Chemical (give all names commonly used): YSZ(Yttrium Stabilized Zirconia) and GDC(Gadolinium Doped Ceria) If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. Name of vendor/manufacturer that you are planning to obtain this material from: Kurt J. Lesker URL for vendor?s website where info on the proposed chemical can be found: http://www.lesker.com/newweb/menu_sputtertargets.cfm?CFID=509541&CFTOKEN=52542279 Vendor?s address and phone number: 3983 First Street Livermore, CA 94551 1-800-245-1656/925-449-0104 What is your reason for wanting to bring this material into the lab: I want to process, such as etch, Si wafer or SiN in CIS after deposition of these materials. List all the lab equipment and wet benches that you propose to use with this chemical: Drytek1 and wetbenchgen Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): YSZ: Yttrium 16%, Zirconia 84% - Purity:99.7% GDC: Gadolinium 20%, Ceria 20% - Purity:99.9% State the form that the proposed chemical is in: Thin film on Si wafer. Put together a detailed process flow description on how you proposed to use this chemical: The materials are DC sputtered thin film and oxidized afterward. I sent MSDS to Jim via fax. If you have any comment on them, Please let me know. Regards. Masafumi Nakamura