From Umberto.Ulmanella at appliedbiosystems.com Tue Jul 6 13:59:05 2004 From: Umberto.Ulmanella at appliedbiosystems.com (Umberto Ulmanella) Date: Tue, 6 Jul 2004 13:59:05 -0700 Subject: Application to use PEG Message-ID: __________________ To whom it may concern, I am contemplating the possibility of using PolyEthylene Glycol in my process. This material has unique biocompatibility properties and is suitable to be used in a cleanroom setting and to be integrated in MEMS devices, as proven in the literature. Please find attached the forms required in your website. Any suggestions regarding changes to equipment and/or procedures are welcome. Regards, Umberto Ulmanella -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... Name: PEG application.doc Type: application/octet-stream Size: 35328 bytes Desc: not available URL: From mahnaz at snf.stanford.edu Tue Jul 6 14:17:38 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Tue, 06 Jul 2004 14:17:38 -0700 Subject: Application to use SU-8 References: Message-ID: <40EB16F2.6E1CDC04@snf.stanford.edu> Hi Umberto, sorry for the delay, the issue with su8 is contamination. we do allow the chemical to be spun only at headway and is one on one base. I will see you today for training so we can discuss it in more details. mahnaz Umberto Ulmanella wrote: > > To whom it may concern, > > I am contemplating the possibility of using SU-8 photoresist from > Microchem corp. (http://www.microchem.com) in my process. The goal is > to obtain tall structures, in the order of 100um or more, in > particular reservoir and channels, with minimum feature size 10um. > Currently the design has not been finalized, so the choice between the > different families of product is still open, with the SU8-50 to 100 > and SU8-2035 to 2100 the most likely. I would appreciate any feedback > on the choice of a particular type, especially for what concerns the > difference between the traditional SU8 and the newer SU8-2000 types. > Please find attached the necessary documentation as per the SNF > procedures listed in your website. Any suggestions regarding changes > to equipment and/or procedures are welcome. > > Regards, > > Umberto Ulmanella > > > > -------------- next part -------------- An HTML attachment was scrubbed... URL: From aeonia at stanford.edu Sun Jul 11 13:21:47 2004 From: aeonia at stanford.edu (Hyeun-su Kim) Date: Sun, 11 Jul 2004 13:21:47 -0700 Subject: Using Polyimide. Message-ID: <1089577307.40f1a15bcf170@webmail.stanford.edu> Hi, I have a bottle of polyimide (HD chemical, PI-2610). I am thinking about spin coating and drytek etching. I have MSDS for this. Could you tell me what I need to do to bring it into the clean room? Thank you. Hyeun-Su (aeonia) From mahnaz at snf.stanford.edu Wed Jul 14 16:44:47 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Wed, 14 Jul 2004 16:44:47 -0700 Subject: A question. References: <1089671862.40f312b6b3460@webmail.stanford.edu> <40F32F4C.5835601F@snf.stanford.edu> <1089741009.40f420d1d3bd4@webmail.stanford.edu> Message-ID: <40F5C56F.2187B8DA@snf.stanford.edu> My bad, one t The site is specmat at snf.stanford.edu mahnaz Yiqi Luo wrote: > Sorry, Mahnaz, the server said this email address doesn't exist. Could you > give me another one? Thank you. > > > please send a request to specmatt at snf. > > > > mahnaz > > > > Yiqi Luo wrote: > > > > > Hello, Mahnaz, > > > > > > I'm Yiqi Luo, a cleanroom user. Since our section needs the > > photoresist > > > pattern with a thickness of 50 um, I should use SU8 headway > > spincoater. > > > Could you please let me know how to get the permission to use that > > one? > > > Thank you so much. > > > > > > Regards, > > > > > > Yiqi Luo > > > 07/12 > > > > From rubenluo at stanford.edu Wed Jul 14 18:16:19 2004 From: rubenluo at stanford.edu (Yiqi Luo) Date: Wed, 14 Jul 2004 18:16:19 -0700 Subject: A question. Message-ID: <1089854179.40f5dae3cc6c2@webmail.stanford.edu> Dear officer, I'm Yiqi Luo, a cleanroom user. Since our section needs the photoresist pattern with a thickness of 50 um, I should use SU8 headway spincoater. Could you please let me know how to get the permission to use that one? Thank you so much. Regards, Yiqi Luo 07/12 From mahnaz at snf.stanford.edu Mon Jul 19 17:01:11 2004 From: mahnaz at snf.stanford.edu (Mahnaz Mansourpour) Date: Mon, 19 Jul 2004 17:01:11 -0700 Subject: A question. References: <1089854179.40f5dae3cc6c2@webmail.stanford.edu> Message-ID: <40FC60C7.4F580145@snf.stanford.edu> Hi Yiqi You are ok to use this material in our lab under some restriction. The material is only allowed to be dispense at headway, contamination is a major issue. I think I have some material to share with my name/lab use on it as storage is another issue for us. Please see me before starting your work so I can show you which cassette to use and how to go about it in general.. mahnaz Yiqi Luo wrote: > Dear officer, > > I'm Yiqi Luo, a cleanroom user. Since our section needs the photoresist > pattern with a thickness of 50 um, I should use SU8 headway spincoater. > Could you please let me know how to get the permission to use that one? > Thank you so much. > > Regards, > > Yiqi Luo > 07/12 From jimkruger at yahoo.com Wed Jul 21 16:50:17 2004 From: jimkruger at yahoo.com (jim kruger) Date: Wed, 21 Jul 2004 16:50:17 -0700 (PDT) Subject: Molybdenum Disilicide in Metallica Message-ID: <20040721235017.71505.qmail@web40902.mail.yahoo.com> I am requesting approval of deposition of MoSi2 in Metallica. Other than film thickness, manual 4-pt probe and annealing (hot plate or Blue M oven), and wafer saw, no other equipment use is planned. Thanks, jimkruger __________________________________ Do you Yahoo!? Vote for the stars of Yahoo!'s next ad campaign! http://advision.webevents.yahoo.com/yahoo/votelifeengine/ -------------- next part -------------- A non-text attachment was scrubbed... Name: Request for approval of MoSi2.doc Type: application/msword Size: 25088 bytes Desc: Request for approval of MoSi2.doc URL: From artyjamo at comcast.net Thu Jul 22 10:13:38 2004 From: artyjamo at comcast.net (artyjamo at comcast.net) Date: Thu, 22 Jul 2004 17:13:38 +0000 Subject: MSDS for AZ 100nXT Message-ID: <072220041713.5033.40FFF5B70001CE32000013A9220076143801030E06979B9D0E@comcast.net> Hello SpecMat, I would like to request approval to use a negative resist made by Clariant (AZ) called AZ 100nXT. This is a thick coating (42-100um) negative resist that develops in LDD-26W (TMAH) and cleans up in Acetone/ NMP i.e. a thick resist that is easier to strip than SU-8. I would use this resist on the headway spinner, and expose on the KS MA-6 Thanks! -Aleta Jamora (ajamo) artyjamo at comcast.net -------------- next part -------------- An HTML attachment was scrubbed... URL: -------------- next part -------------- A non-text attachment was scrubbed... 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However, if you wish to be canceled from this list please click on the following link: http://www.software-for-education.com/rem.pl?email=specmat at snf.stanford.edu&done=rem.htm Or call 800-679-7007 and ask to be deleted from our list. __________________________ Computer Products for Education 5325 140th Avenue North Clearwater, Florida 33760 Tel: 800-679-7007 Fax: 800-679-6996 ___________________ THANK YOU! 18314149221117 From bipr at hotmail.com Mon Jul 26 12:31:50 2004 From: bipr at hotmail.com (bipr at hotmail.com) Date: Tue, 27 Jul 2004 03:31:50 +0800 Subject: Email marketing Message-ID: An HTML attachment was scrubbed... URL: From ayz at snf.stanford.edu Tue Jul 27 10:28:29 2004 From: ayz at snf.stanford.edu (Arthur Zhang) Date: Tue, 27 Jul 2004 10:28:29 -0700 (PDT) Subject: carbon nanotubes Message-ID: Hi, I would like to bring in single walled carbon nanotubes into the lab. Could you tell me the procedure for doing this? I am getting the nanotubes from a professor from the University of Florida and he has sent me the msds for them. Thanks, Arthur Zhang From ayz2 at cornell.edu Tue Jul 27 13:10:17 2004 From: ayz2 at cornell.edu (Arthur Yasheng Zhang) Date: Tue, 27 Jul 2004 16:10:17 -0400 (EDT) Subject: carbon nanotubes Message-ID: <1477.171.64.98.238.1090959017.squirrel@webmail.cornell.edu> Hi, I would like to bring single walled carbon nanotubes into the lab. I will be getting them from a professor from the University of Florida. The nanotubes are suspended in ethanol solution. I would like to deposit them in WB Solvent and look at them in the AFM. Attached is the MSDS for the nanotubes. Please let me know of any other information/procedure needed. Thanks! --Arthur Zhang ayz at snf.stanford.edu -------------- next part -------------- A non-text attachment was scrubbed... Name: MSDS-SWNT.pdf Type: application/pdf Size: 116431 bytes Desc: not available URL: From mcvittie at snf.stanford.edu Tue Jul 27 13:34:51 2004 From: mcvittie at snf.stanford.edu (Jim McVittie) Date: Tue, 27 Jul 2004 13:34:51 -0700 Subject: carbon nanotubes References: Message-ID: <4106BC6B.F453B2A2@snf.stanford.edu> Arthur, To bring your nanotubes into the lab, we need the following: 1. MSDS -- I found a MSDS for multiwall tubes. It would be nice if you could find one for single wall tubes. See http://www.nano-lab.com/safety.html 2. Are these SWNTs in powder form? Generally, we do like powders in the cleanroom. 3. What equipment do you want to use? I believe SWNT have metal (iron) particles on one end so we will not let SWNT into clean tools. 4. Outline the process you want to do. This can be conbined with item 3 above. Jim Arthur Zhang wrote: > Hi, > I would like to bring in single walled carbon nanotubes into the lab. > Could you tell me the procedure for doing this? I am getting the > nanotubes from a professor from the University of Florida and he has sent > me the msds for them. > > Thanks, > Arthur Zhang -------------- next part -------------- A non-text attachment was scrubbed... Name: mcvittie.vcf Type: text/x-vcard Size: 422 bytes Desc: Card for Jim McVittie URL: From mtang at snf.stanford.edu Tue Jul 27 14:20:43 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Tue, 27 Jul 2004 14:20:43 -0700 Subject: carbon nanotubes References: <1477.171.64.98.238.1090959017.squirrel@webmail.cornell.edu> Message-ID: <4106C72B.631FC7B@snf.stanford.edu> Hi Arthur -- Thanks, I think you have addressed Jim's concerns (does everyone else agree?) The only addition I would make is to request that you obtain and use your own labware, as necessary (we do provide labware for general use, but if nanotubes stick to the labware, they may cause problems in other people's devices.) Labware is available in biostores and I have some beakers that you are welcome to have. Mary Arthur Yasheng Zhang wrote: > Hi, > > I would like to bring single walled carbon nanotubes into the lab. I will > be getting them from a professor from the University of Florida. The > nanotubes are suspended in ethanol solution. I would like to deposit them > in WB Solvent and look at them in the AFM. Attached is the MSDS for the > nanotubes. > > Please let me know of any other information/procedure needed. > > Thanks! > --Arthur Zhang > ayz at snf.stanford.edu > > ------------------------------------------------------------------------ > Name: MSDS-SWNT.pdf > MSDS-SWNT.pdf Type: Portable Document Format (application/pdf) > Encoding: base64 > Download Status: Not downloaded with message -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kone at stanford.edu Wed Jul 28 11:05:26 2004 From: kone at stanford.edu (Amy Lee) Date: Wed, 28 Jul 2004 11:05:26 -0700 Subject: Spin-on dopant annealing Message-ID: <1091037926.4107eae6afe9c@webmail.stanford.edu> We're interested in putting a bare Si wafer that has been treated with a spin-on dopant (SOD) in the ag4108 rapid thermal annealer at temperatures around 1000degC. Prior to RTA, the only "non-clean" process the wafer will go through is the application of the SOD, which is done on the headway in Litho. After RTA, the wafer does not need to be put into any clean processing eqpt. Our group already has approval to use the SOD (Emulsitone, borosilicate film) in the lab (Morgan Mager received the approval). If we can't put it in ag4108, would it be possible to put our wafers in Tylan4 furnace instead? Thanks, Amy Lee From mtang at snf.stanford.edu Wed Jul 28 16:58:22 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Wed, 28 Jul 2004 16:58:22 -0700 Subject: Spin-on dopant annealing References: <1091037926.4107eae6afe9c@webmail.stanford.edu> Message-ID: <41083D9E.45F003C5@snf.stanford.edu> Hi Amy -- Could you please outline your process flow in more detail? I think that SOD is often spun on, and then heated to drive dopants to the interface, dipped to remove the oxide, and then annealed to do drive in. Is this what you are proposing to do? Otherwise, are you proposing to put uncured SOD into the ag4108? By the way, the headway is considered gold-contaminated -- and because the wafer comes into direct contact with the not-so-clean chuck, unless there is a proper wbdiff-type clean afterwards, I don't think it's a good idea to put this into the ag4108... I don't recall, but is the SOD electronics grade? Mary Amy Lee wrote: > We're interested in putting a bare Si wafer that has been treated with a > spin-on dopant (SOD) in the ag4108 rapid thermal annealer at temperatures > around 1000degC. Prior to RTA, the only "non-clean" process the wafer will > go through is the application of the SOD, which is done on the headway in > Litho. After RTA, the wafer does not need to be put into any clean > processing eqpt. > > Our group already has approval to use the SOD (Emulsitone, borosilicate > film) in the lab (Morgan Mager received the approval). > > If we can't put it in ag4108, would it be possible to put our wafers in > Tylan4 furnace instead? > > Thanks, > Amy Lee -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu From kone at stanford.edu Wed Jul 28 23:17:49 2004 From: kone at stanford.edu (Amy Lee) Date: Wed, 28 Jul 2004 23:17:49 -0700 Subject: Spin-on dopant annealing In-Reply-To: <41083D9E.45F003C5@snf.stanford.edu> Message-ID: <000301c47533$c62b87e0$5ec20c80@P> Process flow (either A or B, not including the various diff cleans required in between the furnace steps): A. Bare Si wafer -> tylan furnace to grow oxide layer -> tylan poly to grow amorphous Si -> cont'd below or B. Purchased SOI wafer -> cont'd below A or B -> spin on SOD w/ headway coater -> bake on hot plate for 1hr @ 100degC -> RTA or tylan4 to drive in the dopants -> residual film strip at wbgeneral I am assuming that the SOD is electronics grade, but I will have to call and check to be sure. Otherwise, here is more information from the vendor about the SOD we are using. http://www.emulsitone.com/bsif1x10.html Thanks! > -----Original Message----- > From: Mary Tang [mailto:mtang at snf.stanford.edu] > Sent: Wednesday, July 28, 2004 4:58 PM > To: Amy Lee > Cc: specmat at snf.stanford.edu; dtyeh at stanford.edu > Subject: Re: Spin-on dopant annealing > > Hi Amy -- > > Could you please outline your process flow in more detail? I think that > SOD is > often spun on, and then heated to drive dopants to the interface, dipped > to > remove the oxide, and then annealed to do drive in. Is this what you are > proposing to do? Otherwise, are you proposing to put uncured SOD into the > ag4108? By the way, the headway is considered gold-contaminated -- and > because > the wafer comes into direct contact with the not-so-clean chuck, unless > there > is a proper wbdiff-type clean afterwards, I don't think it's a good idea > to put > this into the ag4108... > > I don't recall, but is the SOD electronics grade? > > Mary > > Amy Lee wrote: > > > We're interested in putting a bare Si wafer that has been treated with a > > spin-on dopant (SOD) in the ag4108 rapid thermal annealer at > temperatures > > around 1000degC. Prior to RTA, the only "non-clean" process the wafer > will > > go through is the application of the SOD, which is done on the headway > in > > Litho. After RTA, the wafer does not need to be put into any clean > > processing eqpt. > > > > Our group already has approval to use the SOD (Emulsitone, borosilicate > > film) in the lab (Morgan Mager received the approval). > > > > If we can't put it in ag4108, would it be possible to put our wafers in > > Tylan4 furnace instead? > > > > Thanks, > > Amy Lee > > -- > Mary X. Tang, Ph.D. > Stanford Nanofabrication Facility > CIS Room 136, Mail Code 4070 > Stanford, CA 94305 > (650)723-9980 > mtang at stanford.edu > http://snf.stanford.edu > From jun_yuan at icsl.ucla.edu Thu Jul 29 00:34:29 2004 From: jun_yuan at icsl.ucla.edu (Yuan) Date: Thu, 29 Jul 2004 00:34:29 -0700 (PDT) Subject: Nickel Silicide process in your lab Message-ID: Dear committe members: This is Jun Yuan from UC,LA, the student of Prof. Jason Woo. I am working in SNF lab now to build a metal gate mosfet, and I plan to use Ni-silicide in Source/Drain and Gate region instead of using Ti-silicide. I wish you can consider Ni-silicide just a replacement of Ti-silicide process, so that I can finish all of the process step in your lab. There are a lot of papers talking about the Ni-silicide process in CMOS technology recently, and I randomly picked up a few of them for the convenient references. If necessary, I can show my CV and IV curves measured on Ni-silicide/thin-oxide(26A)/Si layer, which shows good performance, means Ni doesn't affect the oxide quality. Thanks for your considerations. Jun Yuan -------------------------- Electrical Engineering department, University of California, Los Angeles Tel: 1-310-206-7331 (O) Tel: 1-310-313-6681 (H) -------------- next part -------------- A non-text attachment was scrubbed... Name: nisi.zip Type: application/zip Size: 995197 bytes Desc: URL: From mtang at snf.stanford.edu Thu Jul 29 16:58:37 2004 From: mtang at snf.stanford.edu (Mary Tang) Date: Thu, 29 Jul 2004 16:58:37 -0700 Subject: Application to use PEG References: Message-ID: <41098F2D.4A41B32C@snf.stanford.edu> Hi Umberto, Jun Xie -- Many apologies for the delay in getting back to you on this -- I'm afraid we each thought the other took care of it... Although in principle PEG is OK, there are some concerns: 1. We do not allow powders or crystals in the lab, as they generate particles. So, please mix up your chemicals outside the lab. You can mix them up in your own lab, or mix them here, in the wafersaw room. If you have concerns about particulates, you can filter them in the lab (I think PEG would be OK.) 2. PEG is OK on the headway and on the hotplates. However, please make sure to use foil liners to prevent contaminating the station. Please also either avoid using cassettes or ensure they are clean after you use them (yes, I know there's residual resist in most places, but we know and understand resist.) 3. Which etcher to do propose to use? The DRIE etcher at SNF is the STS etch system, which is a clean system and not compatible with your materials (not to mention, probably of absolutely no use, since it's good for etching silicon and not much else.) Plasma etchers which would probably serve your needs are the MRC and drytek1. 4. PEG that is cured is fine for the contact aligners (I believe this is what Jun Xie mentioned in our chat today.) So, in summary, the use of PEG, as discussed with Jun Xie (for headway, hotplates, and aligner), is OK (Mahnaz and I have discussed this.) The PEG should be mixed outside the lab. The etcher requires more discussion. Thanks, Mary Umberto Ulmanella wrote: > > > __________________ > > To whom it may concern, > > I am contemplating the possibility of using PolyEthylene Glycol in my > process. This material has unique biocompatibility properties and is > suitable to be used in a cleanroom setting and to be integrated in > MEMS devices, as proven in the literature. Please find attached the > forms required in your website. Any suggestions regarding changes to > equipment and/or procedures are welcome. > > Regards, > > Umberto Ulmanella > > -- Mary X. Tang, Ph.D. Stanford Nanofabrication Facility CIS Room 136, Mail Code 4070 Stanford, CA 94305 (650)723-9980 mtang at stanford.edu http://snf.stanford.edu -------------- next part -------------- An HTML attachment was scrubbed... URL: