Spin-on dopant annealing

Mary Tang mtang at snf.stanford.edu
Wed Jul 28 16:58:22 PDT 2004

Hi Amy --

Could you please outline your process flow in more detail?  I think that SOD is
often spun on, and then heated to drive dopants to the interface, dipped to
remove the oxide, and then annealed to do drive in.  Is this what you are
proposing to do?  Otherwise, are you proposing to put uncured SOD into the
ag4108?  By the way, the headway is considered gold-contaminated -- and because
the wafer comes into direct contact with the not-so-clean chuck, unless there
is a proper wbdiff-type clean afterwards, I don't think it's a good idea to put
this into the ag4108...

I don't recall, but is the SOD electronics grade?


Amy Lee wrote:

> We're interested in putting a bare Si wafer that has been treated with a
> spin-on dopant (SOD) in the ag4108 rapid thermal annealer at temperatures
> around 1000degC.  Prior to RTA, the only "non-clean" process the wafer will
> go through is the application of the SOD, which is done on the headway in
> Litho.  After RTA, the wafer does not need to be put into any clean
> processing eqpt.
> Our group already has approval to use the SOD (Emulsitone, borosilicate
> film) in the lab (Morgan Mager received the approval).
> If we can't put it in ag4108, would it be possible to put our wafers in
> Tylan4 furnace instead?
> Thanks,
> Amy Lee

Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
mtang at stanford.edu

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