[Fwd: Ge and metal process flow outline]
mtang at snf.stanford.edu
Mon Nov 29 16:07:32 PST 2004
Hi all --
Follow up from Krishna and Abhijit -- the process flow that he and
fellow Germanium folk would like to use. What do you think?
By the way, speaking with Uli and Abhijit, both say that Ge processing
has been going on in the AG4108. There are still some concerns about
contamination and such, but it appears that this is not a gating factor
in Ge processing in our lab.
-------- Original Message --------
Subject: Ge and metal process flow outline
Date: Mon, 29 Nov 2004 15:21:32 -0800
From: Abhijit Pethe <pethe at stanford.edu>
To: 'Mary Tang' <mtang at snf.stanford.edu>
Here is an outline of my process flow. This would be the flow most
people who would be working on Ge would use in the SNF.
Substrate: Umicore Ge wafers
Have been using silicide contaminated tubes and apparatus
mainly the tylanbpsg and wbsilicide
1. Oxynitridation in the *AG4108* - using ammonia and oxygen for
1-2min @650C in silicide quartz ware.
2. doped poly deposition in *tystar1* followed by a tubecoat
1. 500-800A deposition of Ni/ Hf / W or Ti in sct/gryphon
2. silicidation furnace RTP system 300-700C for 5min - *ag4108*
3. Clean etch conditions either at the *wbmetal* or *clean* glassware
1. LTO Deposition in *tylanbpsg* metal side
2. Etch in *wbmetal*
3. Al deposition in gryphon/sct
4. etch in *p5000 chamber A* or wbmetal
1. anneal in *tylanfga* 1hr-4hrs
Please let me know if there are any questions.
_Abhijit Jayant Pethe_
Department of Electrical Engineering
Stanford University, CA
Phone :(O)(650)-725-3608; (C) (650)-387-6435
e-mail:// ////pethe at stanford.edu// <mailto:pethe at stanford.edu>
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
mtang at stanford.edu
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