Particles Re: Appointment for wafer inspection

Mahnaz Mansourpour mahnaz at snf.stanford.edu
Thu Apr 21 15:17:22 PDT 2005


Jim McVittie wrote:

>Hi,
>
>I inspected Ankur's wafer this afternoon. I was surprised on how drity it 
>was. It had finger prints all over and it was loaded with particles. He 
>claimed the particles and finger prints were from the a carrier wafer to 
>the back. He did not seem to know anything about using dark field or the 
>black lamp for looking at particles. Putting wafers like his into clean 
>etchers can't be good for the users trying to do clean work. It seems 
>to me we should have some standard in terms of gross particles for 
>wafers going into our tools. A simple black light or dark field inspection 
>would be good enough. Maybe we could do wafer inspections at several 
>point in a first process for new users.
>
>	Jim  
>
>
>On Thu, 21 Apr 2005, Ankur Jain wrote:
>
>  
>
>>Hello Dr. McVittie,
>> As per SpecMat instructions given to me (please see note below), I would
>>like to show you a wafer which I did DRIE on yesterday. What would be a
>>good time for you? I'd appreciate it if we could do this as soon as
>>possible. I am available any time Thursday after 2 pm, including late
>>night, and any time on Friday.
>>
>>thanks,
>>
>>Ankur
>>
>>---------- Forwarded message ----------
>>Date: Thu, 10 Mar 2005 08:28:03 -0800
>>From: Ed Myers <edmyers at stanford.edu>
>>To: Ankur Jain <ankurjn at stanford.edu>
>>Cc: rissman at stanford.edu, maurice at snf.stanford.edu
>>Subject: Re: Addendum to my request
>>
>>Ankur,
>>
>>SpecMat has reviewed your process.  We have the following comments
>>regarding your request.  First, the clean prior to step 2, Al deposition in
>>the gryphon can not be done at WBMetal, it needs to be done at WBGeneral in
>>beakers.  Also, while you can use the gryphon for metal deposition, please
>>do not use any sputter etch.  Finally, Jim McVittie would like to inspect
>>your wafer following the deep reactive ion etch step.  Please contact Jim
>>and arrange this inspection.
>>
>>Regards,
>>
>>
>>At 01:51 PM 2/18/2005, you wrote:
>>    
>>
>>>Hello SpecMat members,
>>> Following discussions with Ed Myers and Jim McVittie, I would like to
>>>propose two alternatives to the way I was planning to doing the DRIE in my
>>>structure. These alternatives are (1) leaving 20-30 um of Si during the
>>>STS etcher and completing the etch in drytek1, or (2) growing a layer of
>>>thermal oxide prior to NiTi sputter and using that as an etch stop for
>>>DRIE.
>>> I am attaching a powerpoint file explaining these two alternatives. I
>>>will be happy to adopt either of the alternatives if that helps me run the
>>>proposed process.
>>> Please let me know if there are any questions.
>>>
>>>
>>>regards,
>>>
>>>Ankur.
>>>
>>>*************************************************************************
>>>ANKUR JAIN
>>>Graduate Student
>>>Microscale Heat Transfer Laboratories         Residence:
>>>Room 201, Building 530                        126 Blackwelder Ct, Apt 902
>>>Stanford, CA-94305                            Stanford, CA - 94305
>>>Ph: 650-736-0044                              Cell Ph: 650-799-8986
>>>http://www.stanford.edu/~ankurjn
>>>      
>>>
>>
>>    
>>
>
>  
>
I totally agree with jim on this.

mahnaz
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