Process Flwow for ALD and Pd/Si/O film request

Ed Myers edmyers at stanford.edu
Mon Feb 7 17:03:18 PST 2005


Here is Rhett's process flow.


>From: "Brewer, Rhett T" <rhett.t.brewer at intel.com>
>To: "Ed Myers" <edmyers at stanford.edu>
>
>
>Ed,
>
>I just finished my excel version of the process flow so I thought I
>would send it anyway.
>
>I think that the RTA step comes after the LTO per your suggestion.
>After metallization we should only have a 400C anneal in tylanfga (I
>believe this is a pretty standard forming gas anneal.)  If the temp is
>too high, I am more than happy to bring it down, but I believe this is a
>standard process.  The only thing non-standard are my films beneath it.
>
>In your previous e-mail you mentioned TXRF.  There are standard
>materials that can be observed in TXRF, but I believe that Au is not one
>of them (I will check into that.)
>
>Certainly because we control the process we can self police and ensure
>no possibility for Au contamination.  Is that sufficient?
>
>Also, when I request TXRF they only do it for the materials I request.
>Do you have a list of specific materials to look for?
>
>Rhett
>
>
>
>-----Original Message-----
>From: Ed Myers [mailto:edmyers at stanford.edu]
>Sent: Monday, February 07, 2005 10:22 AM
>To: Brewer, Rhett T
>Subject: RE: Contamination Experiment and LGA filmsq
>
>Rhett,
>
>I used my notes to send something off to specmat.  I did notice one item
>
>that concerned me.  The RTA you mentioned was after metallization.  The
>temperatures seemed awfully high for aluminum.  You may also want to
>combine your anneal, with the LTO densification.  The wafer will be
>covered
>in LTO and should minimize contamination concern.
>
>Ed
>
>
>At 09:48 AM 2/7/2005, you wrote:
> >Ed,
> >
> >I am making up a process flow for you to send around.  Will be done in
>a
> >few minutes...
> >
> >Rhett
> >
> >-----Original Message-----
> >From: Ed Myers [mailto:edmyers at stanford.edu]
> >Sent: Monday, February 07, 2005 9:48 AM
> >To: Brewer, Rhett T
> >Subject: Re: Contamination Experiment and LGA filmsq
> >
> >Rhett,
> >
> >Outside of getting TXRF measurements on your incoming wafer, I'm not
> >sure
> >what is required.  I need to condense our discussion and forward
> >comments
> >to the SpecMat committee.  I will encourage the committee to give me
> >testing conditions prior to our meeting.  Worst case maybe the meeting
> >will
> >come out with an acceptance criteria that once it is met you can do
>your
> >
> >processing.
> >
> >Regards,
> >Ed
> >
> >
> >At 08:56 AM 2/7/2005, you wrote:
> > >Hi Ed,
> > >I had some issues with my e-mail late last week and some mail got
> > >bounced.  I am resending this important e-mail about the
>contamination
> > >experiment I need to run:
> > >
> > >Thanks for taking time to speak with me this morning.
> > >
> > >I left without a clear experiment to run on my wafers coming into the
> > >fab.  I understand that I need to check the front and backside, but
> >what
> > >is the standard experiment required by Stanford to qualify wafers as
> > >eligible for processing in semi-clean equipment.  I want to make sure
> >that
> > >what I do will satisfy the committee.  Let me know soon so that I can
> >set
> > >it up and get the required analysis done.  Given the typical several
> >day
> > >turn around time for analysis - and my desire to have this data by
>your
> >
> > >Feb. 15th meeting - I need to process my wafers at the beginning of
> >this week.
> > >
> > >Thank you.
> > >
> > >Rhett
> > >
> > >
> > >Additionally, I am looking for a "semi-clean" source for Al2O3
> > >deposition.  I contacted Lance Goddard Associates and they can grow
> >Al2O3,
> > >but I need to know how to determine if they have a qualified
> >"semi-clean"
> > >process.  I am asking basic questions like - does the chamber see Au,
> >Cu,
> > >or Cr.
> > >Do you know of a thin film growth company with "semi-clean" processes
> >that
> > >grow Al2O3 - otherwise, what is the standard procedure for bringing
> >films
> > >from outside vendors in?
> > >
> > >Alternatively - I believe the Balzers was a semi-clean machine and is
> >now
> > >over in physics.  Who would know how to find that machine and if I
> >could
> > >still use it for semi-clean Al2O3 deposition.
> > >
> > >Thanks again.
> > >Rhett
> > >
> > >Rhett Brewer
> > >Intel Corporation
> > >work: 408-765-8254
> > >cell: 408-655-3448
> > ><mailto:rhett.t.brewer at intel.com>rhett.t.brewer at intel.com
> > >
>
>
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