[Fwd: Etching Nitride layers - P5000]
Mary Tang
mtang at snf.stanford.edu
Mon Feb 14 07:05:18 PST 2005
-------- Original Message --------
Subject: Etching Nitride layers - P5000
Date: Fri, 11 Feb 2005 13:25:02 -0800
From: Ofer Levi <levi at snowmass.stanford.edu>
To: Mary Tang <mtang at snf.stanford.edu>
CC: Jim McVittie <mcvittie at snf.stanford.edu>, Wonjoo Suh
<wjsuh at stanford.edu>
Dear Mary,
Following our discussion yesterday, I attach hereby a revised run sheet for
our sensor wafer that describes the processing I do so far. I can clean the
sample as needed before coating the sample with E-beam resist and Chrome.
At the moment I am using Innotec for chrome layer, but if needed I can
consider doing clean Cr. deposition. After e-beam writing, I remove the
Chrome layer using the wet Chrome etch, and develop the resist.
I would like to try using the P-5000 etch tool, by mounting my sample onto
a 4 inch Silicon wafer and etching the Nitride layer.
Thanks,
Ofer
______________________________________________
Ofer Levi, Ph.D.
Department of Electrical Engineering, Stanford University
CIS-X Rm 310, Stanford, CA 94305-4075
Phone: (650)723-0464 or 725-6907
Fax: (650)723-4659
Adm. Asst.: Gail Chun-Creech Ph: (650)723-0983
E-Mail: levi at snow.stanford.edu
Web page: http://snow.stanford.edu/~levi/
______________________________________________
--
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA 94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu
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