Addendum to my request

[Ankur Jain]

Hello SpecMat members,
 Following discussions with Ed Myers and Jim McVittie, I would like to
propose two alternatives to the way I was planning to doing the DRIE in my
structure. These alternatives are (1) leaving 20-30 um of Si during the
STS etcher and completing the etch in drytek1, or (2) growing a layer of
thermal oxide prior to NiTi sputter and using that as an etch stop for
DRIE.
 I am attaching a powerpoint file explaining these two alternatives. I
will be happy to adopt either of the alternatives if that helps me run the
proposed process.
 Please let me know if there are any questions.


regards,

Ankur.

*************************************************************************
ANKUR JAIN
Graduate Student
Microscale Heat Transfer Laboratories         Residence:
Room 201, Building 530                        126 Blackwelder Ct, Apt 902
Stanford, CA-94305                            Stanford, CA - 94305
Ph: 650-736-0044                              Cell Ph: 650-799-8986
http://www.stanford.edu/~ankurjn
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