From zxie at stanford.edu  Tue Jan  4 16:54:04 2005
From: zxie at stanford.edu (Zhigang Xie)
Date: Tue, 4 Jan 2005 16:54:04 -0800 (PST)
Subject: chemical usage
Message-ID: <Pine.GSO.4.44.0501041644570.3707-100000@elaine36.Stanford.EDU>

I want to use hydrobromic acid (HBr) for my process in GaAs wetbench.
According to SNF website, it is "in stock". So it is not a new material.
Is it really available in CIS clean room? If not available, I want to
bring in one bottle, where is the good place for storage?

Thanks,
Zhigang Xie (coral ID: zxie)





From edmyers at stanford.edu  Wed Jan  5 07:43:31 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Wed, 05 Jan 2005 07:43:31 -0800
Subject: Fwd: SCT Tungsten and Niobium
Message-ID: <6.0.1.1.2.20050105074153.01c0feb0@edmyers.pobox.stanford.edu>

Committee members,

Gloria is requesting Niobium deposition in the SCT.  I've asked her to make 
a formal request to the committee.  Tungsten is already an approved metal.

Ed


>X-Sieve: CMU Sieve 2.2
>Delivered-To: emyers at snf.stanford.edu
>Date: Tue,  4 Jan 2005 18:43:55 -0800
>From: Gloria Man Ting Wong <gloriamt at stanford.edu>
>To: emyers at snf.stanford.edu
>Subject: SCT Tungsten and Niobium
>User-Agent: Internet Messaging Program (IMP) 3.2.5
>X-Authenticated-User: gloriamt
>X-Originating-IP: 171.67.103.206
>
>Hi,
>
>Happy New Year!  With the new year brings (finally) my need to use the SCT
>sputtering system for tungsten and niobium.  Do you have time to train me
>on this?  I need careful control of the layer thicknesses, so will be
>confirming thicknesses across the wafer with x-ray diffraction.
>
>Please let me know when would be convenient to meet.  Also, will I need to
>purchase a niobium target?
>
>Thanks,
>Gloria




From mdeal at stanford.edu  Wed Jan  5 08:12:04 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Wed, 05 Jan 2005 08:12:04 -0800
Subject: Fwd: SCT Tungsten and Niobium
In-Reply-To: <6.0.1.1.2.20050105074153.01c0feb0@edmyers.pobox.stanford.e
 du>
References: <6.0.1.1.2.20050105074153.01c0feb0@edmyers.pobox.stanford.edu>
Message-ID: <6.1.1.1.2.20050105080210.01e9ff08@mdeal.pobox.stanford.edu>


Nb should be fine.  It has a very low vapor pressure and is similar to Moly 
and W. No known deep levels in Si.     -mike



At 07:43 AM 1/5/2005, Ed Myers wrote:
>Committee members,
>
>Gloria is requesting Niobium deposition in the SCT.  I've asked her to 
>make a formal request to the committee.  Tungsten is already an approved metal.
>
>Ed
>
>
>>X-Sieve: CMU Sieve 2.2
>>Delivered-To: emyers at snf.stanford.edu
>>Date: Tue,  4 Jan 2005 18:43:55 -0800
>>From: Gloria Man Ting Wong <gloriamt at stanford.edu>
>>To: emyers at snf.stanford.edu
>>Subject: SCT Tungsten and Niobium
>>User-Agent: Internet Messaging Program (IMP) 3.2.5
>>X-Authenticated-User: gloriamt
>>X-Originating-IP: 171.67.103.206
>>
>>Hi,
>>
>>Happy New Year!  With the new year brings (finally) my need to use the SCT
>>sputtering system for tungsten and niobium.  Do you have time to train me
>>on this?  I need careful control of the layer thicknesses, so will be
>>confirming thicknesses across the wafer with x-ray diffraction.
>>
>>Please let me know when would be convenient to meet.  Also, will I need to
>>purchase a niobium target?
>>
>>Thanks,
>>Gloria
>
>



From mtang at snf.stanford.edu  Wed Jan  5 09:07:32 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Wed, 05 Jan 2005 09:07:32 -0800
Subject: chemical usage
In-Reply-To: <Pine.GSO.4.44.0501041644570.3707-100000@elaine36.Stanford.EDU>
References: <Pine.GSO.4.44.0501041644570.3707-100000@elaine36.Stanford.EDU>
Message-ID: <41DC1ED4.4070800@snf.stanford.edu>

Hi Zhigang --

HBr is an etch gas, so you might say that we stock it, but it's not 
something you can pour to use at wbgaas, I'm afraid.  We do not stock 
HBr liquid acid, so you would have to order your own.  Could you please 
submit a formal new materials request?  Please let us know what you 
would like to use it for (i.e., do you have application notes or an 
experimental methods description or some other protocol?), what amount 
you would like to bring in and what concentration (ideally, as little as 
possible and at the lowest concentration possible.)  Please provide (and 
read) the MSDS (the concentrated stuff is pretty bad and requires some 
caution in handling.)  Is this a one-time experiment or something you 
will be using routinely?  If you need this frequently, we can provide 
storage space in an appropriate area.

Thanks,

Mary


Zhigang Xie wrote:

>I want to use hydrobromic acid (HBr) for my process in GaAs wetbench.
>According to SNF website, it is "in stock". So it is not a new material.
>Is it really available in CIS clean room? If not available, I want to
>bring in one bottle, where is the good place for storage?
>
>Thanks,
>Zhigang Xie (coral ID: zxie)
>
>
>  
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From zxie at stanfordalumni.org  Thu Jan  6 18:02:01 2005
From: zxie at stanfordalumni.org (Zhigang Xie)
Date: Thu, 06 Jan 2005 18:02:01 -0800
Subject: HBr usage in clean room
Message-ID: <970JagccB1136S06.1105063321@cmsweb06.cms.usa.net>

Dear committee,

As a formal new material request, I put three file related to Hydrogen Bromide
(HBr)here: 
MSDS pdf file,
text file for filling the form,
word file to describe the process I will use. 
I plan to use this chemical frequently, so a storage place inside clean room
is ideal. 

Thanks,
Zhigang Xie (coral ID: zxie)


____________________________________________________________________
   
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From mtang at snf.stanford.edu  Mon Jan 10 15:46:09 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Mon, 10 Jan 2005 15:46:09 -0800
Subject: [Fwd: HBr usage in clean room]
Message-ID: <41E313C1.2080205@snf.stanford.edu>

Hi all --

Zhigang stopped by and asked about the status of this request.  It looks 
fine to me, so with Mahnaz' OK, I've approved it.  Zhigang will collect 
waste locally and label appropriately.  As he plans to use this chemical 
frequently, the chemical will be stored in the original container, 
labeled with his contact info, in the chemical passthrough area for 
personal chemicals (there is room there.)

Mary

-------- Original Message --------
Subject: 	HBr usage in clean room
Date: 	Thu, 06 Jan 2005 18:02:01 -0800
From: 	Zhigang Xie <zxie at stanfordalumni.org>
To: 	<specmat at snf.stanford.edu>



Dear committee,

As a formal new material request, I put three file related to Hydrogen Bromide
(HBr)here: 
MSDS pdf file,
text file for filling the form,
word file to describe the process I will use. 
I plan to use this chemical frequently, so a storage place inside clean room
is ideal. 

Thanks,
Zhigang Xie (coral ID: zxie)


____________________________________________________________________
   



-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu

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From wangdw at stanford.edu  Mon Jan 10 17:11:47 2005
From: wangdw at stanford.edu (Dunwei Wang)
Date: Mon, 10 Jan 2005 17:11:47 -0800
Subject: Sputtering of Co and Mn in metalica
Message-ID: <5.2.1.1.2.20050110170904.02201d00@localhost>

Hi,

We are looking for sources of sputtering Co and Mn. I wonder if these 
materials are allowed in metalica. If so, what precautions are needed for 
handling sputtering? Thanks a lot!

Dunwei



From lwchang at stanford.edu  Tue Jan 11 01:57:30 2005
From: lwchang at stanford.edu (Li-Wen Chang)
Date: Tue, 11 Jan 2005 17:57:30 +0800
Subject: New chemical approval request : Poly(styrene-b-methyl methacrylate) 
Message-ID: <005901c4f7c3$f6f596f0$52840c80@IBM4A340690B1D>

Dear sirs:
I have a request for approving a new chemical : Poly(styrene-b-methyl methacrylate) which is a kind of diblock copolymer.(PS:PMMA).
Please review the following information.
Tks.


1. Requestor name: Li-Wen Chang

2. Phone number: 650-387-6139

3. email address: lwchang at stanford.edu

4. Requestor?s PI (Advisor) or Company: 
  H.-S. Philip Wong
  Center for Integrated Systems, CISX 312
  Stanford University, Stanford, CA 94305.
  Phone: +1-650-725-0982
  Fax: +1-650-725-7731
  Mobile: +1-650-353-0796
  Email: hspwong at stanford.edu 
5. The name of the new Chemical (give all names commonly used): 
  Poly(styrene-b-methyl methacrylate)
6. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 
  N/A.
7. Name of vendor/manufacturer that you are planning to obtain this material from: 
  Polymer Source Inc.
8. URL for vendor?s website where info on the proposed chemical can be found: 
  http://www.polymersource.com/shoppingCart/product.asp?ID=408

9. Vendor?s address and phone number: 
  124 Avro Street 
  Dorval (Montreal), Quebec H9P 2X8
  Canada
  Toll Free: 1-866-422-9842
  Telephone: 514-421-5517 or 5506
  Fax: 514-421-5518

  E-mail: contact at polymersource.com


10. What is your reason for wanting to bring this material into the lab: 
  Quantitative investigation of lithographic subdivision using self-assembly diblock copolymer

11. Make a strong case why you can not use an already approved chemical/material for this purpose: 
  Poly(styrene-b-methyl methacrylate) has self-assembly property and has the potential to integrate to semiconductor process. We want to explore the process space of self-assembly Poly(styrene-b-methyl methacrylate).
(Note that all previously approved chemicals are listed in the MSDS Index binder located in the receiving area. Also see SNF Index of MSDS Sheets.)

12. List all the lab equipment and wet benches that you propose to use with this chemical: 
  Optical Photolithography Resist Coat - Headway Coater . Exposure - Karl Suss MA-6 Contact Aligner . 
  Annealing Furnaces  - Tylan Forming Gas Anneal . 
  Wet Benches - General Use Wet Bench (wbgeneral) ; Solvent Wet Bench . 
  In-Line Process Characterization AFM Nanoscope Dimension ; Rudolph Ellipsometer ; SEM Hitachi Model S-800 

13. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 
  Mixed quantities : approximate 200ml . (The raw material is in the form of powders and is not permitted in the cleanroom.)
14. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): 
  powders

15. State whether the chemical needed to be mixed to use it: 
  To mix up the powders using toluene into a solution.(Need access to a chemicals handling bench.)

16. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. 
  As attached files. (SMMA)

17. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. 

18. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. 
  L Solvents, Flammables, and Combustible Materials. Main hazard class : 0.
19. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. 
  Stored in the yellow solvent cabinet.
20. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed. 
  APPROPRIATE METHOD OF DISPOSAL OF SUBSTANCE OR PREPARATION

  Contact a licensed professional waste disposal service to dispose

  of this material. Dissolve or mix the material with a combustible

  solvent and burn in a chemical incinerator equipped with an

  after burner and scrubber. Observe all federal, state, and local

  environmental regulations.

21. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. 
  As attached file. (flow)
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From mtang at snf.stanford.edu  Tue Jan 11 07:13:17 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 11 Jan 2005 07:13:17 -0800
Subject: New chemical approval request : Poly(styrene-b-methyl methacrylate)
In-Reply-To: <005901c4f7c3$f6f596f0$52840c80@IBM4A340690B1D>
References: <005901c4f7c3$f6f596f0$52840c80@IBM4A340690B1D>
Message-ID: <41E3ED0D.3040302@snf.stanford.edu>

Hi Li-Wen --

Thanks for your request. In principle, your PS:PMMA is fine to use in
the lab. However, there are additional considerations:

1. The TylanFGA tube is NOT what you want to use. This probably goes too
high for what you want (you'll char your polymer) and your material will
then contaminate the tube. Please review the procedures available
on-line for processing PMMA. There are a couple of BlueM ovens available
which are likely more appropriate for your needs. Let us know what
temperature process cycle you require for the PS/PMMA material. Please
also be aware that because you are using toluene, that you'll have to
take special precautions to ensure that your uncured material is always
kept either under an exhausted bench work area or in an enclosed box. We
do not want toluene vapors in the lab.

2. Make sure to review the MSDS for toluene. PS:PMMA is pretty inert --
toluene is not -- although you find it everywhere, it should be handled
carefully. Most MSDS sheets will not state this, but it is a suspected
carcinogen and should be handled only in a solvent hood. There is a
solvent hood available in the wafersaw room which you can use for mixing
your solutions. There is also a small scale there which you can use for
weighing. You will probably have to find your own labware to measure,
mix, and store your solutions.

3. The AFM, ellipsometer, and SEM should be used only on the cured material.

4. You will need a yellow Personal Chemicals label for each of your
PS:PMMA/Toluene bottles, if you plan to store this in the lab. If you
plan to dispose of it the same day you use it, then you can just use a
standard blue hazardous chemicals label. Please see Mahnaz about getting
a yellow label, if you need it.

5. You will need to take precautions in disposing only of the uncured
material. At the headway, solid waste should be enclosed in a sealed
plastic bag and then placed in the solid waste container for solvent
waste, under the lithosolv bench. Any liquid waste may be disposed of in
the solvent carboy at the lithosolv bench.

In summary, your request is not approved until you take care of #1 and
you understand and agree to abide by #2,3,4 & 5. Discuss your curing
cycle with Mahnaz and see if the standard PMMA process tools will work
for you.

Mary



Li-Wen Chang wrote:

> Dear sirs:
> I have a request for approving a new chemical : Poly(styrene-b-methyl
> methacrylate) which is a kind of diblock copolymer.(PS:PMMA).
> Please review the following information.
> Tks.
> 1. Requestor name: *Li-Wen Chang*
> 2. Phone number: *650-387-6139*
> 3. email address: *lwchang at stanford.edu* <mailto:lwchang at stanford.edu>
> 4. Requestor?s PI (Advisor) or Company:
>
>     *H.-S. Philip Wong
>     Center for Integrated Systems, CISX 312
>     Stanford University, Stanford, CA 94305.
>     Phone: +1-650-725-0982
>     Fax: +1-650-725-7731
>     Mobile: +1-650-353-0796
>     Email: hspwong at stanford.edu *
>
> 5. The name of the new Chemical (give all names commonly used):
>
>     *Poly(styrene-b-methyl methacrylate)*
>
> 6. If there are secondary new chemicals that must be used with this
> material, such as a developer for a new resist, list each of them here
> and supply MSDSs for each of them.
>
>     *N/A.*
>
> 7. Name of vendor/manufacturer that you are planning to obtain this
> material from:
>
>     *Polymer Source Inc.*
>
> 8. URL for vendor?s website where info on the proposed chemical can be
> found:
>
>     *http://www.polymersource.com/shoppingCart/product.asp?ID=408*
>
> 9. Vendor?s address and phone number:
>
>     *124 Avro Street
>     Dorval (Montreal), Quebec H9P 2X8
>     Canada*
>
>     *Toll Free: 1-866-422-9842
>     Telephone: 514-421-5517 or 5506
>     Fax: 514-421-5518
>
>     E-mail: **contact at polymersource.com*
>     <mailto:contact at polymersource.com>
>
> 10. What is your reason for wanting to bring this material into the lab:
>
>     *Quantitative investigation of lithographic subdivision using
>     self-assembly diblock copolymer*
>
> 11. Make a strong case why you can not use an already approved
> chemical/material for this purpose:
>
>     *Poly(styrene-b-methyl methacrylate) has self-assembly property
>     and has the potential to integrate to semiconductor process. We
>     want to explore the process space of self-assembly
>     Poly(styrene-b-methyl methacrylate).*
>
> (Note that all previously approved chemicals are listed in the MSDS
> Index binder located in the receiving area. Also see SNF Index of MSDS
> Sheets <http://snf.stanford.edu/Materials/MSDS-index.html>.)
>
> 12. List all the lab equipment
> <http://snf.stanford.edu/Equipment/EquipByArea.html> and wet benches
> that you propose to use with this chemical:
>
>     Optical Photolithography Resist Coat - *Headway Coater*
>     <http://snf.stanford.edu/Equipment/headway2/headway2.html> .
>     Exposure - *Karl Suss MA-6 Contact Aligner*
>     <http://snf.stanford.edu/Equipment/karlsuss/karlsuss.html> .
>     Annealing Furnaces - *Tylan Forming Gas Anneal*
>     <http://snf.stanford.edu/Equipment/tylanatm/tylanfga.html> .
>     Wet Benches - *General Use Wet Bench (wbgeneral)*
>     <http://snf.stanford.edu/Equipment/wbgeneral/wbgeneral.html> ;
>     *Solvent Wet Bench*
>     <http://snf.stanford.edu/Equipment/wbsolvent/wbsolvent.html> .
>     In-Line Process Characterization *AFM Nanoscope Dimension*
>     <http://snf.stanford.edu/Equipment/afm2/afm2.html> ; *Rudolph
>     Ellipsometer*
>     <http://snf.stanford.edu/Equipment/ellipsomter/ellipsomter.html> ;
>     *SEM Hitachi Model S-800*
>     <http://snf.stanford.edu/Equipment/semhitachi/semhitachi.html>
>
> 13. Proposed quantity of the chemical that you want to bring into lab
> (give both raw and mixed quantities):
>
>     *Mixed quantities : approximate 200ml . (The raw material is in
>     the form of powders and is not permitted in the cleanroom.)*
>
> 14. State the form that the proposed chemical is in. (Is it solid,
> powder <http://snf.stanford.edu/Materials/Powders.html> or liquid?
> Note: as a general rule, powders
> <http://snf.stanford.edu/Materials/Powders.html> are not permitted in
> the cleanroom.):
>
>     *powders*
>
> 15. State whether the chemical needed to be mixed to use it:
>
>     *To mix up the powders using toluene into a solution.(Need access
>     to a chemicals handling bench.)*
>
> 16. From manufacturer, vendor or the Stanford safety site
> <http://goddard.stanford.edu/msds/>, obtain a legible Material Safety
> Data Sheet (MSDS) for all the proposed chemicals. Send these to the
> person listed below.
>
>     *As attached files. (SMMA)*
>
> 17. If the chemical/material is to be used in any the "clean"
> <http://snf.stanford.edu/Materials/EquipmentLists/Clean.html>
> equipment, purity specifications will be needed. This is most
> important for chemicals/material that are not normally used for VLSI
> device fabrication. To be allowed into a "clean" tool
> <http://snf.stanford.edu/Materials/EquipmentLists/Clean.html>, the
> material should MOS grade or better.
> 18. Read the MSDSs as well as the Stanford Chemical Storage Groups
> <http://snf.stanford.edu/Materials/StorageGroup.html> and the Stanford
> Chemical Safety Data Base
> <http://ehs.stanford.edu/servlet/chemsafe.lookup.class> sections on
> this website to determine the Storage Group Identifier
> <http://snf.stanford.edu/Materials/StorageGroup.html> and Main Hazard
> Class <http://snf.stanford.edu/Materials/HazardClasses.html> of your
> chemical/material.
>
>     *L Solvents, Flammables, and Combustible Materials. Main hazard
>     class : 0.*
>
> 19. Determine whether there is enough room to store your material in
> the designed lab storage areas. Storage groups
> <http://snf.stanford.edu/Materials/StorageGroup.html> A,B,D and L are
> stored in the yellow solvent cabinet in the furnace support area,
> while storage groups
> <http://snf.stanford.edu/Materials/StorageGroup.html> C, E, F and G
> are stored on top of one of the Pass-through Carts. Ensure your
> chemical container or material is properly labeled
> <http://snf.stanford.edu/Materials/ChemLabels.html>. If there is no
> available room, it must be stored by in the bulk storage area. You
> will then need to obtain it from receiving area personnel each time
> you want to use it and return it to them when you are finished using
> it (or each time you leave the lab). Note that there is no storage of
> chemicals/materials in the processing lab or at any wet bench.
>
>     *Stored in the yellow solvent cabinet.*
>
> 20. In your discussions with vendors, try to determine the best way to
> dispose of your spent chemicals and by-products. The lab has
> acid/base, HF and solvent drains. The acid/base drains go to a
> neutralization system before going the city waste water system. The
> city of Palo Alto has tight limits on the amount of heavy metals that
> be disposed of through the waste water system. If your chemical
> contains any metals, there is a good chance that you will have to
> collect all your waste and dispose of it in labeled containers which
> are picked up the Health and Safety Department. The HF drains go to a
> central tank which is pumped out by a HF disposal service at
> considerable expense on a regular basis. The solvent drains in the
> solvent benches are collected under the benches and disposed of by
> Heath and Safety as needed.
>
>     *APPROPRIATE METHOD OF DISPOSAL OF SUBSTANCE OR PREPARATION*
>
>     *Contact a licensed professional waste disposal service to dispose*
>
>     *of this material. Dissolve or mix the material with a combustible*
>
>     *solvent and burn in a chemical incinerator equipped with an*
>
>     *after burner and scrubber. Observe all federal, state, and local*
>
>     *environmental regulations.*
>
> 21. Put together a detailed process flow description on how you
> proposed to use this chemical. This should include: Any chemical
> mixing, all lab equipment and wet benched to be used, all containers
> to be used, where chemical is to be stored and how chemical and
> by-products are to be deposed of. This should be in a Word file
> attached to your e-mail request. In reviewing your procedure, we will
> be most interested in how the safety and contamination issues are to
> be dealt with.
>
>     *As attached file. (flow)*
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From chi.on.chui at intel.com  Tue Jan 11 09:57:39 2005
From: chi.on.chui at intel.com (Chui, Chi On)
Date: Tue, 11 Jan 2005 09:57:39 -0800
Subject: Request to process LaAlO3 inside SNF
Message-ID: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>

Dear All,

 

I'm the Intel Researcher-in-Residence in SNF. I have some film stacks of ~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some FGA in tylanfga (in addition to standard litho). Could I anneal them in the backside of the furnace?

 

Thanks in advance!

 

/Chi On

 

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From mcvittie at snf.stanford.edu  Tue Jan 11 10:46:24 2005
From: mcvittie at snf.stanford.edu (Jim McVittie)
Date: Tue, 11 Jan 2005 10:46:24 -0800
Subject: Request to process LaAlO3 inside SNF
References: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>
Message-ID: <41E41F00.6AE63B38@snf.stanford.edu>

Specmat,

Here is some info I found on La2O3.

La2O3 is of interest as a new hi k material so it is thought to be a Si
device friendly material. Both La and its oxides have low vapor
pressures so there should no vapor transport during a FGA step.

La is  of the most reactive of the rare-earth metals. It oxidises
rapidly when exposed to air. Cold water attacks lanthanum slowly, and
hot water attacks it much more rapidly. The metal reacts directly with
elemental carbon, nitrogen, boron, selenium, silicon, phosphorus,
sulphur, and with halogens.

La2O3 has a melting point of 2307C and boiling point of 4200C. This
means it is very stable will not easily decompose. Under stability in ts
MSDS, I found the following:
   Stable: Stable.
   Conditions to Avoid: Protect from moisture.
   Materials to Avoid: Strong acids, Strong oxidizing agents Carbon
dioxide.

 Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity --
1,


"Chui, Chi On" wrote:

> Dear All,
>
> I?m the Intel Researcher-in-Residence in SNF. I have some film stacks
> of ~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some FGA in
> tylanfga (in addition to standard litho). Could I anneal them in the
> backside of the furnace?
>
> Thanks in advance!
>
> /Chi On
>
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From mdeal at stanford.edu  Tue Jan 11 10:49:06 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Tue, 11 Jan 2005 10:49:06 -0800
Subject: Request to process LaAlO3 inside SNF
In-Reply-To: <41E41F00.6AE63B38@snf.stanford.edu>
References: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>
 <41E41F00.6AE63B38@snf.stanford.edu>
Message-ID: <6.1.1.1.2.20050111104818.01fbed28@mdeal.pobox.stanford.edu>


It should fine as long as it came from a clean source.  Do we know where 
Chi-On got it or deposited it?    -mike

At 10:46 AM 1/11/2005, Jim McVittie wrote:
>Specmat,
>
>Here is some info I found on La2O3.
>
>La2O3 is of interest as a new hi k material so it is thought to be a Si 
>device friendly material. Both La and its oxides have low vapor pressures 
>so there should no vapor transport during a FGA step.
>
>La is  of the most reactive of the rare-earth metals. It oxidises rapidly 
>when exposed to air. Cold water attacks lanthanum slowly, and hot water 
>attacks it much more rapidly. The metal reacts directly with elemental 
>carbon, nitrogen, boron, selenium, silicon, phosphorus, sulphur, and with 
>halogens.
>
>La2O3 has a melting point of 2307C and boiling point of 4200C. This means 
>it is very stable will not easily decompose. Under stability in ts MSDS, I 
>found the following:
>    Stable: Stable.
>    Conditions to Avoid: Protect from moisture.
>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon dioxide.
>
>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity -- 1,
>
>
>"Chui, Chi On" wrote:
>>Dear All,
>>I?m the Intel Researcher-in-Residence in SNF. I have some film stacks of 
>>~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some FGA in tylanfga 
>>(in addition to standard litho). Could I anneal them in the backside of 
>>the furnace? Thanks in advance! /Chi On
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From shott at snf.stanford.edu  Tue Jan 11 12:06:32 2005
From: shott at snf.stanford.edu (John Shott)
Date: Tue, 11 Jan 2005 12:06:32 -0800
Subject: [Fwd: HBr usage in clean room]
In-Reply-To: <41E313C1.2080205@snf.stanford.edu>
References: <41E313C1.2080205@snf.stanford.edu>
Message-ID: <41E431C8.6070704@snf.stanford.edu>

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From mtang at snf.stanford.edu  Tue Jan 11 13:20:18 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 11 Jan 2005 13:20:18 -0800
Subject: [Fwd: HBr usage in clean room]
In-Reply-To: <41E431C8.6070704@snf.stanford.edu>
References: <41E313C1.2080205@snf.stanford.edu> <41E431C8.6070704@snf.stanford.edu>
Message-ID: <41E44312.8030204@snf.stanford.edu>

Hi John, et al --

Yes, that is a very good point and one that I guess I hadn't really 
thought carefully about, I have to admit.... He was in my office with a 
bottle in hand...

The solution he is using is dilute, and probably poses less risk, but 
you're absolutely right -- he'll be handling the concentrated stuff 
while he's mixing -- and, this stuff will stored in the same chemicals 
passthrough area as nitric and other strong acids and bases... (I 
gather, however, that this is a standard procedure for polishing GaAs -- 
does the Harris lab have a chemical handling area where they can do this?)

I will get in touch with him and ask him to remove his bottle.

My sincerest apologies to all -- I just acted too quickly...



Mary


John Shott wrote:

> Mary et al:
>
> I'm sorry to be contributing to this discussion so late ... I think 
> that I must have missed this when I was in Denver.
>
> However, if I'm not mistaken, at one point we had NOT allowed HBr in 
> the lab based on the fact that it would have to be used at wbgen and 
> that it's got serious chemical reactivity problems ... if I remember 
> correctly, it's exceedingly reactive with nitric acid and we didn't 
> feel that we had the controls in place to insure that nitric and HBr 
> wouldn't be in and around the wet bench at the same time.
>
> My memory may be bad on this subject ... Jim or Mike may have better 
> recall than I .... but I think that an argument can be made that use 
> of HBr in a shared laboratory environment may not be a great idea.
>
> I apologize again for not jumping in before now .... I must have 
> missed this either when I was trying to read email over a slow modem 
> from Denver last week or when I was wading through the large volume of 
> e-mail in my mailbox upon my return.
>
> Comments from other members?
>
> Thanks,
>
> John
>
>
> Mary Tang wrote:
>
>> Hi all --
>>
>> Zhigang stopped by and asked about the status of this request. It 
>> looks fine to me, so with Mahnaz' OK, I've approved it. Zhigang will 
>> collect waste locally and label appropriately. As he plans to use 
>> this chemical frequently, the chemical will be stored in the original 
>> container, labeled with his contact info, in the chemical passthrough 
>> area for personal chemicals (there is room there.)
>>
>> Mary
>>
>> -------- Original Message --------
>> Subject: HBr usage in clean room
>> Date: Thu, 06 Jan 2005 18:02:01 -0800
>> From: Zhigang Xie <zxie at stanfordalumni.org>
>> To: <specmat at snf.stanford.edu>
>>
>>
>>
>> Dear committee,
>>
>> As a formal new material request, I put three file related to 
>> Hydrogen Bromide
>> (HBr)here: MSDS pdf file,
>> text file for filling the form,
>> word file to describe the process I will use. I plan to use this 
>> chemical frequently, so a storage place inside clean room
>> is ideal.
>> Thanks,
>> Zhigang Xie (coral ID: zxie)
>>
>>
>> ____________________________________________________________________
>>
>>
>>
>>------------------------------------------------------------------------
>>
>>1. Requestor name: Zhigang Xie
>> 
>>2. Phone number: (650)7238040
>>
>>3. email address: zxie at stanford.edu
>> 
>>4. Requestor?s PI (Advisor) or Company: 
>>
>>J. S. Harris and G. S. Solomon.
>> 
>>5. The name of the new Chemical (give all names commonly used): 
>>
>>hydrobromic acid (HBr)
>> 
>>6. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 
>>
>>N/A
>>
>>7. Name of vendor/manufacturer that you are planning to obtain this material from: 
>>
>>VWR international
>>
>>8. URL for vendor?s website where info on the proposed chemical can be found: 
>>
>>www.vwr.com
>>
>>9. Vendor?s address and phone number: 
>>
>>San Francisco Regional Distribution Center 
>>3745 Bayshore Blvd. 
>>Brisbane, CA 94005 
>>Orders: 1-800-932-5000 
>>Web Orders: www.vwr.com 
>>Phone: (415) 468-7150 
>>Fax: (415) 468-1105
>>
>>
>>10. What is your reason for wanting to bring this material into the lab: 
>>
>>For etching of GaAs and AlGaAs with enough smoothness and roundness for optical device fabrication.  
>>
>>11. Make a strong case why you can not use an already approved chemical/material for this purpose: 
>>
>>HBr is the standard chemical for making my devices according to publications. Try to find alternative, but it is impossible. 
>>(Note that all previously approved chemicals are listed in the MSDS Index binder located in the receiving area. Also see SNF Index of MSDS Sheets.)
>>
>>12. List all the lab equipment and wet benches that you propose to use with this chemical: 
>>
>>Only GaAs wet bench. 
>>
>>13. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 
>>
>>the order for VWR is one bottle (500ml)
>>
>>14. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): 
>>
>>It is liquied (acid)
>>
>>15. State whether the chemical needed to be mixed to use it: 
>>
>>It need to mix with H2O2 (peroxide) in very diluted solution.
>>
>>16. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. 
>>
>>Please see the attached PDF file. 
>>
>>17. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. 
>>
>>It will not be used in "clean" equipment.
>>
>>18. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. 
>>
>>19. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. 
>>
>>As an inorganic Acid, it should be in storage group F. 
>>
>>20. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed.
>>
>>I intend to keep the spent chemical and by-products in a plastic bottle for EH&S to pick up. (After discussions with vendors, it seems OK to get aspirated, but it wait for the committee to approve.)  
>> 
>>21. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. 
>>
>>See the attached word file. 
>>
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mtang at snf.stanford.edu  Tue Jan 11 13:31:30 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 11 Jan 2005 13:31:30 -0800
Subject: HBr usage in clean room
In-Reply-To: <970JagccB1136S06.1105063321@cmsweb06.cms.usa.net>
References: <970JagccB1136S06.1105063321@cmsweb06.cms.usa.net>
Message-ID: <41E445B2.1000306@snf.stanford.edu>

Hi Zhigang --

I'm sorry, I realize I just approved your process, but it was pointed 
out to me that wet processing of HBr has been previously been banned 
from the lab... The concern is for the handling and storage of 
hydrobromic acid in the presence of strong acids and bases, as it will 
form Bromine gas. At the wet stations, where there are multiple users, 
it is difficult to ensure that there will be no contact with acids or 
bases.

Are there wet benches in the Harris lab which you could use for your 
work? There are labs in chemistry, where HBr is frequently done, which 
might work for your needs.

Again, I'm really sorry, but I hadn't thought it out. I'm afraid this 
means that we cannot allow you to do this process in the lab... Could 
you please remove your HBr bottle from the lab? If you need help in 
finding where else you can store it, or in finding ways to transport it, 
let me know.

Again, my apologies -- please let me know what we might be able to do to 
help...

Mary

Zhigang Xie wrote:

>Dear committee,
>
>As a formal new material request, I put three file related to Hydrogen Bromide
>(HBr)here: 
>MSDS pdf file,
>text file for filling the form,
>word file to describe the process I will use. 
>I plan to use this chemical frequently, so a storage place inside clean room
>is ideal. 
>
>Thanks,
>Zhigang Xie (coral ID: zxie)
>
>
>____________________________________________________________________
>   
>
>------------------------------------------------------------------------
>
>1. Requestor name: Zhigang Xie
> 
>2. Phone number: (650)7238040
>
>3. email address: zxie at stanford.edu
> 
>4. Requestor?s PI (Advisor) or Company: 
>
>J. S. Harris and G. S. Solomon.
> 
>5. The name of the new Chemical (give all names commonly used): 
>
>hydrobromic acid (HBr)
> 
>6. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 
>
>N/A
>
>7. Name of vendor/manufacturer that you are planning to obtain this material from: 
>
>VWR international
>
>8. URL for vendor?s website where info on the proposed chemical can be found: 
>
>www.vwr.com
>
>9. Vendor?s address and phone number: 
>
>San Francisco Regional Distribution Center 
>3745 Bayshore Blvd. 
>Brisbane, CA 94005 
>Orders: 1-800-932-5000 
>Web Orders: www.vwr.com 
>Phone: (415) 468-7150 
>Fax: (415) 468-1105
>
>
>10. What is your reason for wanting to bring this material into the lab: 
>
>For etching of GaAs and AlGaAs with enough smoothness and roundness for optical device fabrication.  
>
>11. Make a strong case why you can not use an already approved chemical/material for this purpose: 
>
>HBr is the standard chemical for making my devices according to publications. Try to find alternative, but it is impossible. 
>(Note that all previously approved chemicals are listed in the MSDS Index binder located in the receiving area. Also see SNF Index of MSDS Sheets.)
>
>12. List all the lab equipment and wet benches that you propose to use with this chemical: 
>
>Only GaAs wet bench. 
>
>13. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 
>
>the order for VWR is one bottle (500ml)
>
>14. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): 
>
>It is liquied (acid)
>
>15. State whether the chemical needed to be mixed to use it: 
>
>It need to mix with H2O2 (peroxide) in very diluted solution.
>
>16. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. 
>
>Please see the attached PDF file. 
>
>17. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. 
>
>It will not be used in "clean" equipment.
>
>18. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. 
>
>19. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. 
>
>As an inorganic Acid, it should be in storage group F. 
>
>20. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed.
>
>I intend to keep the spent chemical and by-products in a plastic bottle for EH&S to pick up. (After discussions with vendors, it seems OK to get aspirated, but it wait for the committee to approve.)  
> 
>21. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. 
>
>See the attached word file. 
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mcvittie at snf.stanford.edu  Tue Jan 11 14:01:06 2005
From: mcvittie at snf.stanford.edu (Jim McVittie)
Date: Tue, 11 Jan 2005 14:01:06 -0800
Subject: [Fwd: HBr usage in clean room]
References: <41E313C1.2080205@snf.stanford.edu> <41E431C8.6070704@snf.stanford.edu>
Message-ID: <41E44CA1.1DCF5546@snf.stanford.edu>

John,

As I recall, the previous request was for using Br not HBr. HBr is a bit
better than Br but I agree there is concern in using it in a common wet
bench.  Br has a exposure limit of 0.1 ppm while the limit for HBr is 3
ppm and for HCl is 5 ppm.

    Jim



John Shott wrote:

> Mary et al:
>
> I'm sorry to be contributing to this discussion so late ... I think
> that I must have missed this when I was in Denver.
>
> However, if I'm not mistaken, at one point we had NOT allowed HBr in
> the lab based on the fact that it would have to be used at wbgen and
> that it's got serious chemical reactivity problems ... if I remember
> correctly, it's exceedingly reactive with nitric acid and we didn't
> feel that we had the controls in place to insure that nitric and HBr
> wouldn't be in and around the wet bench at the same time.
>
> My memory may be bad on this subject ... Jim or Mike may have better
> recall than I .... but I think that an argument can be made that use
> of HBr in a shared laboratory environment may not be a great idea.
>
> I apologize again for not jumping in before now .... I must have
> missed this either when I was trying to read email over a slow modem
> from Denver last week or when I was wading through the large volume of
> e-mail in my mailbox upon my return.
>
> Comments from other members?
>
> Thanks,
>
> John
>
>
> Mary Tang wrote:
>
>> Hi all --
>>
>> Zhigang stopped by and asked about the status of this request.  It
>> looks fine to me, so with Mahnaz' OK, I've approved it.  Zhigang
>> will collect waste locally and label appropriately.  As he plans to
>> use this chemical frequently, the chemical will be stored in the
>> original container, labeled with his contact info, in the chemical
>> passthrough area for personal chemicals (there is room there.)
>>
>> Mary
>>
>> -------- Original Message --------
>> Subject:     HBr usage in clean room
>> Date:     Thu, 06 Jan 2005 18:02:01 -0800
>> From:     Zhigang Xie <zxie at stanfordalumni.org>
>> To:     <specmat at snf.stanford.edu>
>>
>>
>>
>> Dear committee,
>>
>> As a formal new material request, I put three file related to
>> Hydrogen Bromide
>> (HBr)here: MSDS pdf file,
>> text file for filling the form,
>> word file to describe the process I will use. I plan to use this
>> chemical frequently, so a storage place inside clean room
>> is ideal.
>> Thanks,
>> Zhigang Xie (coral ID: zxie)
>>
>>
>> ____________________________________________________________________
>>
>>
>>
>>
>>
>>     --------------------------------------------------------------
>>
>> 1. Requestor name: Zhigang Xie
>>
>> 2. Phone number: (650)7238040
>>
>> 3. email address: zxie at stanford.edu
>>
>> 4. Requestor?s PI (Advisor) or Company:
>>
>> J. S. Harris and G. S. Solomon.
>>
>> 5. The name of the new Chemical (give all names commonly used):
>>
>> hydrobromic acid (HBr)
>>
>> 6. If there are secondary new chemicals that must be used with this
>> material, such as a developer for a new resist, list each of them
>> here and supply MSDSs for each of them.
>>
>> N/A
>>
>> 7. Name of vendor/manufacturer that you are planning to obtain this
>> material from:
>>
>> VWR international
>>
>> 8. URL for vendor?s website where info on the proposed chemical can
>> be found:
>>
>> www.vwr.com
>>
>> 9. Vendor?s address and phone number:
>>
>> San Francisco Regional Distribution Center
>> 3745 Bayshore Blvd.
>> Brisbane, CA 94005
>> Orders: 1-800-932-5000
>> Web Orders: www.vwr.com
>> Phone: (415) 468-7150
>> Fax: (415) 468-1105
>>
>>
>> 10. What is your reason for wanting to bring this material into the
>> lab:
>>
>> For etching of GaAs and AlGaAs with enough smoothness and roundness
>> for optical device fabrication.
>>
>> 11. Make a strong case why you can not use an already approved
>> chemical/material for this purpose:
>>
>> HBr is the standard chemical for making my devices according to
>> publications. Try to find alternative, but it is impossible.
>> (Note that all previously approved chemicals are listed in the MSDS
>> Index binder located in the receiving area. Also see SNF Index of
>> MSDS Sheets.)
>>
>> 12. List all the lab equipment and wet benches that you propose to
>> use with this chemical:
>>
>> Only GaAs wet bench.
>>
>> 13. Proposed quantity of the chemical that you want to bring into
>> lab (give both raw and mixed quantities):
>>
>> the order for VWR is one bottle (500ml)
>>
>> 14. State the form that the proposed chemical is in. (Is it solid,
>> powder or liquid? Note: as a general rule, powders are not permitted
>> in the cleanroom.):
>>
>> It is liquied (acid)
>>
>> 15. State whether the chemical needed to be mixed to use it:
>>
>> It need to mix with H2O2 (peroxide) in very diluted solution.
>>
>> 16. From manufacturer, vendor or the Stanford safety site, obtain a
>> legible Material Safety Data Sheet (MSDS) for all the proposed
>> chemicals. Send these to the person listed below.
>>
>> Please see the attached PDF file.
>>
>> 17. If the chemical/material is to be used in any the "clean"
>> equipment, purity specifications will be needed. This is most
>> important for chemicals/material that are not normally used for VLSI
>> device fabrication. To be allowed into a "clean" tool, the material
>> should MOS grade or better.
>>
>> It will not be used in "clean" equipment.
>>
>> 18. Read the MSDSs as well as the Stanford Chemical Storage Groups
>> and the Stanford Chemical Safety Data Base sections on this website
>> to determine the Storage Group Identifier and Main Hazard Class of
>> your chemical/material.
>>
>> 19. Determine whether there is enough room to store your material in
>> the designed lab storage areas. Storage groups A,B,D and L are
>> stored in the yellow solvent cabinet in the furnace support area,
>> while storage groups C, E, F and G are stored on top of one of the
>> Pass-through Carts. Ensure your chemical container or material is
>> properly labeled. If there is no available room, it must be stored
>> by in the bulk storage area. You will then need to obtain it from
>> receiving area personnel each time you want to use it and return it
>> to them when you are finished using it (or each time you leave the
>> lab). Note that there is no storage of chemicals/materials in the
>> processing lab or at any wet bench.
>>
>> As an inorganic Acid, it should be in storage group F.
>>
>> 20. In your discussions with vendors, try to determine the best way
>> to dispose of your spent chemicals and by-products. The lab has
>> acid/base, HF and solvent drains. The acid/base drains go to a
>> neutralization system before going the city waste water system. The
>> city of Palo Alto has tight limits on the amount of heavy metals
>> that be disposed of through the waste water system. If your chemical
>> contains any metals, there is a good chance that you will have to
>> collect all your waste and dispose of it in labeled containers which
>> are picked up the Health and Safety Department. The HF drains go to
>> a central tank which is pumped out by a HF disposal service at
>> considerable expense on a regular basis. The solvent drains in the
>> solvent benches are collected under the benches and disposed of by
>> Heath and Safety as needed.
>>
>> I intend to keep the spent chemical and by-products in a plastic
>> bottle for EH&S to pick up. (After discussions with vendors, it
>> seems OK to get aspirated, but it wait for the committee to
>> approve.)
>>
>> 21. Put together a detailed process flow description on how you
>> proposed to use this chemical. This should include: Any chemical
>> mixing, all lab equipment and wet benched to be used, all containers
>> to be used, where chemical is to be stored and how chemical and
>> by-products are to be deposed of. This should be in a Word file
>> attached to your e-mail request. In reviewing your procedure, we
>> will be most interested in how the safety and contamination issues
>> are to be dealt with.
>>
>> See the attached word file.
>>
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From mtang at snf.stanford.edu  Tue Jan 11 14:30:15 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 11 Jan 2005 14:30:15 -0800
Subject: [Fwd: HBr usage in clean room]
In-Reply-To: <41E44CA1.1DCF5546@snf.stanford.edu>
References: <41E313C1.2080205@snf.stanford.edu> <41E431C8.6070704@snf.stanford.edu> <41E44CA1.1DCF5546@snf.stanford.edu>
Message-ID: <41E45377.6060902@snf.stanford.edu>

Hi all --

I think we could possibly manage it, if we required that the bench be 
used exclusively by Zhigang (i.e., reserved the whole bench) -- this is 
pretty commonly done by the GaAs folk at the wbgaas bench. That way, we 
can be pretty sure that there would be little risk of exposure to other 
strong corrosives.

I think I'm a little wary about storage. Although I know we are in 
compliance and it is considered to be OK to store something like HBr in 
the same area as strong corrosives, provided everything is capped and 
stored in isolated containment areas, I guess I'm concerned about 
vapors. We do have other things that probably pose similar, albeit low, 
risk (like gold etchant), but it's an unknown for me, so I'm wary.


Mary


Jim McVittie wrote:

> John,
>
> As I recall, the previous request was for using Br not HBr. HBr is a 
> bit better than Br but I agree there is concern in using it in a 
> common wet bench. Br has a exposure limit of 0.1 ppm while the limit 
> for HBr is 3 ppm and for HCl is 5 ppm.
>
> Jim
>
> John Shott wrote:
>
>> Mary et al:
>>
>> I'm sorry to be contributing to this discussion so late ... I think 
>> that I must have missed this when I was in Denver.
>>
>> However, if I'm not mistaken, at one point we had NOT allowed HBr in 
>> the lab based on the fact that it would have to be used at wbgen and 
>> that it's got serious chemical reactivity problems ... if I remember 
>> correctly, it's exceedingly reactive with nitric acid and we didn't 
>> feel that we had the controls in place to insure that nitric and HBr 
>> wouldn't be in and around the wet bench at the same time.
>>
>> My memory may be bad on this subject ... Jim or Mike may have better 
>> recall than I .... but I think that an argument can be made that use 
>> of HBr in a shared laboratory environment may not be a great idea.
>>
>> I apologize again for not jumping in before now .... I must have 
>> missed this either when I was trying to read email over a slow modem 
>> from Denver last week or when I was wading through the large volume 
>> of e-mail in my mailbox upon my return.
>>
>> Comments from other members?
>>
>> Thanks,
>>
>> John
>>
>> Mary Tang wrote:
>>
>>> Hi all --
>>>
>>> Zhigang stopped by and asked about the status of this request. It 
>>> looks fine to me, so with Mahnaz' OK, I've approved it. Zhigang will 
>>> collect waste locally and label appropriately. As he plans to use 
>>> this chemical frequently, the chemical will be stored in the 
>>> original container, labeled with his contact info, in the chemical 
>>> passthrough area for personal chemicals (there is room there.)
>>>
>>> Mary
>>>
>>> -------- Original Message --------
>>> Subject: HBr usage in clean room
>>> Date: Thu, 06 Jan 2005 18:02:01 -0800
>>> From: Zhigang Xie <zxie at stanfordalumni.org>
>>> To: <specmat at snf.stanford.edu>
>>>
>>> Dear committee,
>>>
>>> As a formal new material request, I put three file related to 
>>> Hydrogen Bromide
>>> (HBr)here: MSDS pdf file,
>>> text file for filling the form,
>>> word file to describe the process I will use. I plan to use this 
>>> chemical frequently, so a storage place inside clean room
>>> is ideal.
>>> Thanks,
>>> Zhigang Xie (coral ID: zxie)
>>>
>>> ____________________________________________________________________
>>>
>>>
>>>------------------------------------------------------------------------
>>>
>>>1. Requestor name: Zhigang Xie
>>> 
>>>2. Phone number: (650)7238040
>>>
>>>3. email address: zxie at stanford.edu
>>> 
>>>4. Requestor?s PI (Advisor) or Company: 
>>>
>>>J. S. Harris and G. S. Solomon.
>>> 
>>>5. The name of the new Chemical (give all names commonly used): 
>>>
>>>hydrobromic acid (HBr)
>>> 
>>>6. If there are secondary new chemicals that must be used with this material, such as a developer for a new resist, list each of them here and supply MSDSs for each of them. 
>>>
>>>N/A
>>>
>>>7. Name of vendor/manufacturer that you are planning to obtain this material from: 
>>>
>>>VWR international
>>>
>>>8. URL for vendor?s website where info on the proposed chemical can be found: 
>>>
>>>www.vwr.com
>>>
>>>9. Vendor?s address and phone number: 
>>>
>>>San Francisco Regional Distribution Center 
>>>3745 Bayshore Blvd. 
>>>Brisbane, CA 94005 
>>>Orders: 1-800-932-5000 
>>>Web Orders: www.vwr.com 
>>>Phone: (415) 468-7150 
>>>Fax: (415) 468-1105
>>>
>>>
>>>10. What is your reason for wanting to bring this material into the lab: 
>>>
>>>For etching of GaAs and AlGaAs with enough smoothness and roundness for optical device fabrication.  
>>>
>>>11. Make a strong case why you can not use an already approved chemical/material for this purpose: 
>>>
>>>HBr is the standard chemical for making my devices according to publications. Try to find alternative, but it is impossible. 
>>>(Note that all previously approved chemicals are listed in the MSDS Index binder located in the receiving area. Also see SNF Index of MSDS Sheets.)
>>>
>>>12. List all the lab equipment and wet benches that you propose to use with this chemical: 
>>>
>>>Only GaAs wet bench. 
>>>
>>>13. Proposed quantity of the chemical that you want to bring into lab (give both raw and mixed quantities): 
>>>
>>>the order for VWR is one bottle (500ml)
>>>
>>>14. State the form that the proposed chemical is in. (Is it solid, powder or liquid? Note: as a general rule, powders are not permitted in the cleanroom.): 
>>>
>>>It is liquied (acid)
>>>
>>>15. State whether the chemical needed to be mixed to use it: 
>>>
>>>It need to mix with H2O2 (peroxide) in very diluted solution.
>>>
>>>16. From manufacturer, vendor or the Stanford safety site, obtain a legible Material Safety Data Sheet (MSDS) for all the proposed chemicals. Send these to the person listed below. 
>>>
>>>Please see the attached PDF file. 
>>>
>>>17. If the chemical/material is to be used in any the "clean" equipment, purity specifications will be needed. This is most important for chemicals/material that are not normally used for VLSI device fabrication. To be allowed into a "clean" tool, the material should MOS grade or better. 
>>>
>>>It will not be used in "clean" equipment.
>>>
>>>18. Read the MSDSs as well as the Stanford Chemical Storage Groups and the Stanford Chemical Safety Data Base sections on this website to determine the Storage Group Identifier and Main Hazard Class of your chemical/material. 
>>>
>>>19. Determine whether there is enough room to store your material in the designed lab storage areas. Storage groups A,B,D and L are stored in the yellow solvent cabinet in the furnace support area, while storage groups C, E, F and G are stored on top of one of the Pass-through Carts. Ensure your chemical container or material is properly labeled. If there is no available room, it must be stored by in the bulk storage area. You will then need to obtain it from receiving area personnel each time you want to use it and return it to them when you are finished using it (or each time you leave the lab). Note that there is no storage of chemicals/materials in the processing lab or at any wet bench. 
>>>
>>>As an inorganic Acid, it should be in storage group F. 
>>>
>>>20. In your discussions with vendors, try to determine the best way to dispose of your spent chemicals and by-products. The lab has acid/base, HF and solvent drains. The acid/base drains go to a neutralization system before going the city waste water system. The city of Palo Alto has tight limits on the amount of heavy metals that be disposed of through the waste water system. If your chemical contains any metals, there is a good chance that you will have to collect all your waste and dispose of it in labeled containers which are picked up the Health and Safety Department. The HF drains go to a central tank which is pumped out by a HF disposal service at considerable expense on a regular basis. The solvent drains in the solvent benches are collected under the benches and disposed of by Heath and Safety as needed.
>>>
>>>I intend to keep the spent chemical and by-products in a plastic bottle for EH&S to pick up. (After discussions with vendors, it seems OK to get aspirated, but it wait for the committee to approve.)  
>>> 
>>>21. Put together a detailed process flow description on how you proposed to use this chemical. This should include: Any chemical mixing, all lab equipment and wet benched to be used, all containers to be used, where chemical is to be stored and how chemical and by-products are to be deposed of. This should be in a Word file attached to your e-mail request. In reviewing your procedure, we will be most interested in how the safety and contamination issues are to be dealt with. 
>>>
>>>See the attached word file.
>>>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mcvittie at snf.stanford.edu  Wed Jan 12 10:31:13 2005
From: mcvittie at snf.stanford.edu (Jim McVittie)
Date: Wed, 12 Jan 2005 10:31:13 -0800
Subject: Request to process LaAlO3 inside SNF
References: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>
	 <41E41F00.6AE63B38@snf.stanford.edu> <6.1.1.1.2.20050111104818.01fbed28@mdeal.pobox.stanford.edu>
Message-ID: <41E56CF1.1BA08314@snf.stanford.edu>

Mike,

I agree that it should not cause us problems as long it comes form a
clean source. I will ask him about his source.  Jim

Michael Deal wrote:

>
> It should fine as long as it came from a clean source.  Do we know
> where Chi-On got it or deposited it?    -mike
>
> At 10:46 AM 1/11/2005, Jim McVittie wrote:
>
>> Specmat,
>>
>> Here is some info I found on La2O3.
>>
>> La2O3 is of interest as a new hi k material so it is thought to be a
>> Si device friendly material. Both La and its oxides have low vapor
>> pressures so there should no vapor transport during a FGA step.
>>
>> La is  of the most reactive of the rare-earth metals. It oxidises
>> rapidly when exposed to air. Cold water attacks lanthanum slowly,
>> and hot water attacks it much more rapidly. The metal reacts
>> directly with elemental carbon, nitrogen, boron, selenium, silicon,
>> phosphorus, sulphur, and with halogens.
>>
>> La2O3 has a melting point of 2307C and boiling point of 4200C. This
>> means it is very stable will not easily decompose. Under stability
>> in ts MSDS, I found the following:
>>    Stable: Stable.
>>    Conditions to Avoid: Protect from moisture.
>>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon
>> dioxide.
>>
>>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity
>> -- 1,
>>
>>
>> "Chui, Chi On" wrote:
>>
>> > Dear All,
>> > I?m the Intel Researcher-in-Residence in SNF. I have some film
>> > stacks of ~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some
>> > FGA in tylanfga (in addition to standard litho). Could I anneal
>> > them in the backside of the furnace? Thanks in advance! /Chi On
>>
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From mcvittie at cis.Stanford.EDU  Wed Jan 12 13:10:46 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Wed, 12 Jan 2005 13:10:46 -0800 (PST)
Subject: Co and Mn
In-Reply-To: <6.1.2.0.2.20050111145315.055ea940@hdai1.pobox.stanford.edu>
Message-ID: <Pine.LNX.4.44.0501121256110.22415-100000@cis.Stanford.EDU>

Hongjie,

Mn and Co have vapor pressures below In so there is not a vapor pressure
problem. There are both metals which is consistent with the general use of
the tool. Co has a health risk level of 3 which is the same as Cr and Ni,
while Mn has a health risk level of 0. I believe Co has been used in
Metalica in the past. The main issue with Co is that is magnetic material
which means it will tend to shut the magnetic fields from the magnitron
magnets. This means the target thickness needs to be kept thin. Let me
find out what target thickness was used in the past. Regarding Mn, I do
not see any problems.

I am copying Specmat to see if anyone on the materials committee has any 
comments.

	Jim   

On Tue, 11 Jan 2005, Hongjie Dai wrote:

> 
> Jim,
> 
> Is it ok to deposit Mn and Co in Metallica?  If so, we will order some targets
> 
> Thanks, Hongjie
> 
> 
> ====================================
> Professor Hongjie Dai
> Stanford University
> Department of Chemistry
> Stanford, CA 94305
> 
> Phone: 650-723-4518 (office); 650-725-9156 (lab)
> Fax:     650-725-0259
> Email:  hdai or hdai1 at stanford.edu
> Office: Keck Science Building, Room 125
> ==================================== 
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640




From mcvittie at cis.Stanford.EDU  Wed Jan 12 14:56:14 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Wed, 12 Jan 2005 14:56:14 -0800 (PST)
Subject: Co and Mn
In-Reply-To: <Pine.GSO.4.44.0501121340140.4370-100000@gloworm.Stanford.EDU>
Message-ID: <Pine.LNX.4.44.0501121454220.22415-100000@cis.Stanford.EDU>

Hongjie,

See note below from Eric about using Metalica for sputtering Co. It does 
not sound like we would want to try it again.

	Jim 

On Wed, 12 Jan 2005, Eric Perozziello wrote:

> 
> Hi Jim,
> 
> Way back when metalica was an orphan (~1995).
> 
> I don't recommend it.  We had to thin it down to
> almost a foil, and only got a few thin deps from it.
> 
> It arcs and spits, and can eventually overheat the magnets.
> US, Inc says these guns were not designed for stong
> ferromagnetic materials.
> 
> -Eric
> 
> 
> 
> On Wed, 12 Jan 2005, Jim McVittie wrote:
> 
> > Eric,
> >
> > I believe you told me that you had run Co in the Metalica in the past. Is
> > this correct? Also what was the target thickness.
> >
> > 	Thanks,  Jim
> >
> > On Wed, 12 Jan 2005, Jim McVittie wrote:
> >
> > > Hongjie,
> > >
> > > Mn and Co have vapor pressures below In so there is not a vapor pressure
> > > problem. There are both metals which is consistent with the general use of
> > > the tool. Co has a health risk level of 3 which is the same as Cr and Ni,
> > > while Mn has a health risk level of 0. I believe Co has been used in
> > > Metalica in the past. The main issue with Co is that is magnetic material
> > > which means it will tend to shut the magnetic fields from the magnitron
> > > magnets. This means the target thickness needs to be kept thin. Let me
> > > find out what target thickness was used in the past. Regarding Mn, I do
> > > not see any problems.
> > >
> > > I am copying Specmat to see if anyone on the materials committee has any
> > > comments.
> > >
> > > 	Jim
> > >
> > > On Tue, 11 Jan 2005, Hongjie Dai wrote:
> > >
> > > >
> > > > Jim,
> > > >
> > > > Is it ok to deposit Mn and Co in Metallica?  If so, we will order some targets
> > > >
> > > > Thanks, Hongjie
> > > >
> > > >
> > > > ====================================
> > > > Professor Hongjie Dai
> > > > Stanford University
> > > > Department of Chemistry
> > > > Stanford, CA 94305
> > > >
> > > > Phone: 650-723-4518 (office); 650-725-9156 (lab)
> > > > Fax:     650-725-0259
> > > > Email:  hdai or hdai1 at stanford.edu
> > > > Office: Keck Science Building, Room 125
> > > > ====================================
> > > >
> > > >
> > >
> > >
> >
> > --
> > --------------------------------------------------------------
> > Jim McVittie, Ph.D.    			Senior Research Scientist
> > Allen Center for Integrated Systems     Electrical Engineering
> > Stanford University             	jmcvittie at stanford.edu
> > Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
> > Stanford, CA 94305-4075			Tel: (650) 725-3640
> >
> >
> >
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640




From hdai1 at stanford.edu  Wed Jan 12 16:04:18 2005
From: hdai1 at stanford.edu (Hongjie Dai)
Date: Wed, 12 Jan 2005 16:04:18 -0800
Subject: Co and Mn
In-Reply-To: <Pine.LNX.4.44.0501121454220.22415-100000@cis.Stanford.EDU>
References: <Pine.GSO.4.44.0501121340140.4370-100000@gloworm.Stanford.EDU>
 <Pine.LNX.4.44.0501121454220.22415-100000@cis.Stanford.EDU>
Message-ID: <6.1.2.0.2.20050112160322.05219b00@hdai1.pobox.stanford.edu>


Jim, we will be only depositing no more than 5 nm of Co and will use thin 
foils.  Would this be allowed?

Hongjie

At 02:56 PM 1/12/2005, Jim McVittie wrote:
>Hongjie,
>
>See note below from Eric about using Metalica for sputtering Co. It does
>not sound like we would want to try it again.
>
>         Jim
>
>On Wed, 12 Jan 2005, Eric Perozziello wrote:
>
> >
> > Hi Jim,
> >
> > Way back when metalica was an orphan (~1995).
> >
> > I don't recommend it.  We had to thin it down to
> > almost a foil, and only got a few thin deps from it.
> >
> > It arcs and spits, and can eventually overheat the magnets.
> > US, Inc says these guns were not designed for stong
> > ferromagnetic materials.
> >
> > -Eric
> >
> >
> >
> > On Wed, 12 Jan 2005, Jim McVittie wrote:
> >
> > > Eric,
> > >
> > > I believe you told me that you had run Co in the Metalica in the past. Is
> > > this correct? Also what was the target thickness.
> > >
> > >     Thanks,  Jim
> > >
> > > On Wed, 12 Jan 2005, Jim McVittie wrote:
> > >
> > > > Hongjie,
> > > >
> > > > Mn and Co have vapor pressures below In so there is not a vapor 
> pressure
> > > > problem. There are both metals which is consistent with the general 
> use of
> > > > the tool. Co has a health risk level of 3 which is the same as Cr 
> and Ni,
> > > > while Mn has a health risk level of 0. I believe Co has been used in
> > > > Metalica in the past. The main issue with Co is that is magnetic 
> material
> > > > which means it will tend to shut the magnetic fields from the magnitron
> > > > magnets. This means the target thickness needs to be kept thin. Let me
> > > > find out what target thickness was used in the past. Regarding Mn, I do
> > > > not see any problems.
> > > >
> > > > I am copying Specmat to see if anyone on the materials committee 
> has any
> > > > comments.
> > > >
> > > >   Jim
> > > >
> > > > On Tue, 11 Jan 2005, Hongjie Dai wrote:
> > > >
> > > > >
> > > > > Jim,
> > > > >
> > > > > Is it ok to deposit Mn and Co in Metallica?  If so, we will order 
> some targets
> > > > >
> > > > > Thanks, Hongjie
> > > > >
> > > > >
> > > > > ====================================
> > > > > Professor Hongjie Dai
> > > > > Stanford University
> > > > > Department of Chemistry
> > > > > Stanford, CA 94305
> > > > >
> > > > > Phone: 650-723-4518 (office); 650-725-9156 (lab)
> > > > > Fax:     650-725-0259
> > > > > Email:  hdai or hdai1 at stanford.edu
> > > > > Office: Keck Science Building, Room 125
> > > > > ====================================
> > > > >
> > > > >
> > > >
> > > >
> > >
> > > --
> > > --------------------------------------------------------------
> > > Jim McVittie, Ph.D.                         Senior Research Scientist
> > > Allen Center for Integrated Systems     Electrical Engineering
> > > Stanford University                 jmcvittie at stanford.edu
> > > Rm. 336, 330 Serra Mall                     Fax: (650) 723-4659
> > > Stanford, CA 94305-4075                     Tel: (650) 725-3640
> > >
> > >
> > >
> >
> >
>
>--
>--------------------------------------------------------------
>Jim McVittie, Ph.D.                     Senior Research Scientist
>Allen Center for Integrated Systems     Electrical Engineering
>Stanford University                     jmcvittie at stanford.edu
>Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
>Stanford, CA 94305-4075                 Tel: (650) 725-3640

====================================
Professor Hongjie Dai
Stanford University
Department of Chemistry
Stanford, CA 94305

Phone: 650-723-4518 (office); 650-725-9156 (lab)
Fax:     650-725-0259
Email:  hdai or hdai1 at stanford.edu
Office: Keck Science Building, Room 125
==================================== 



From mcvittie at snf.stanford.edu  Thu Jan 13 09:19:12 2005
From: mcvittie at snf.stanford.edu (Jim McVittie)
Date: Thu, 13 Jan 2005 09:19:12 -0800
Subject: Request to process LaAlO3 inside SNF
References: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>
	 <41E41F00.6AE63B38@snf.stanford.edu> <6.1.1.1.2.20050111104818.01fbed28@mdeal.pobox.stanford.edu>
Message-ID: <41E6AD90.C6785DA8@snf.stanford.edu>

Mike,

Chi On has given me the details on where his LaAlO3 is coming from,
however I am suppose to keep the source confidential. It is from a clean
and should give us no problems. I say let him use the FGA tube.

    Jim

Michael Deal wrote:

>
> It should fine as long as it came from a clean source.  Do we know
> where Chi-On got it or deposited it?    -mike
>
> At 10:46 AM 1/11/2005, Jim McVittie wrote:
>
>> Specmat,
>>
>> Here is some info I found on La2O3.
>>
>> La2O3 is of interest as a new hi k material so it is thought to be a
>> Si device friendly material. Both La and its oxides have low vapor
>> pressures so there should no vapor transport during a FGA step.
>>
>> La is  of the most reactive of the rare-earth metals. It oxidises
>> rapidly when exposed to air. Cold water attacks lanthanum slowly,
>> and hot water attacks it much more rapidly. The metal reacts
>> directly with elemental carbon, nitrogen, boron, selenium, silicon,
>> phosphorus, sulphur, and with halogens.
>>
>> La2O3 has a melting point of 2307C and boiling point of 4200C. This
>> means it is very stable will not easily decompose. Under stability
>> in ts MSDS, I found the following:
>>    Stable: Stable.
>>    Conditions to Avoid: Protect from moisture.
>>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon
>> dioxide.
>>
>>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity
>> -- 1,
>>
>>
>> "Chui, Chi On" wrote:
>>
>> > Dear All,
>> > I?m the Intel Researcher-in-Residence in SNF. I have some film
>> > stacks of ~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some
>> > FGA in tylanfga (in addition to standard litho). Could I anneal
>> > them in the backside of the furnace? Thanks in advance! /Chi On
>>
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From edmyers at stanford.edu  Thu Jan 13 09:58:42 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Thu, 13 Jan 2005 09:58:42 -0800
Subject: Nb target in SCT
In-Reply-To: <Pine.LNX.4.44.0501130901550.22415-100000@cis.Stanford.EDU>
References: <012201c4f912$9abbe830$0100000a@Laptopsally>
 <Pine.LNX.4.44.0501130901550.22415-100000@cis.Stanford.EDU>
Message-ID: <6.0.1.1.2.20050113095108.01b62ef0@edmyers.pobox.stanford.edu>

Gloria,

Do you have written confirmation from the SpecMat committee concerning Nb 
deposition in the SCT?  I don't remember seeing a Nb proposal since I've 
been involved.  I can look in to the purchase cost of the target, but no Nb 
deposition will be allowed unless you have written approved by the SpecMat 
committee.

Ed


At 09:13 AM 1/13/2005, Jim McVittie wrote:
>Gloria,
>
>I have not ordered a target. At this point, I think it would be best to
>have Ed order the target. In the past, the lab paid for targets only if
>several groups requested it. The cost of a 2" x 0.125" target from Lesker
>is $585. While the tool should be able to take 0,125" thick targets, it is
>actually set up to take 0.250" targets. I expect the 0.250" target from
>Lester will be about $1000. I purchased all the previous targets from
>Plasma Materials which had better prices and purity than Lesker.
>
>We can check with the Nishi and Saraswat groups to sdee if they need Nb.
>
>         Jim
>
>On Wed, 12 Jan 2005, Gloria Wong wrote:
>
> > Hi Jim,
> >
> > What is the status of the Nb target in the SCT?  I recall that you and 
> Mike okayed it for use in the SCT, but I can't remember if you were 
> planning on ordering it, or if I should be looking into that.
> >
> > Please let me know because after training on Friday, I would like to 
> starting depositing W and Nb.
> >
> > Thanks,
> > Gloria
> >
>
>--
>--------------------------------------------------------------
>Jim McVittie, Ph.D.                     Senior Research Scientist
>Allen Center for Integrated Systems     Electrical Engineering
>Stanford University                     jmcvittie at stanford.edu
>Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
>Stanford, CA 94305-4075                 Tel: (650) 725-3640




From mcvittie at snf.stanford.edu  Thu Jan 13 10:17:36 2005
From: mcvittie at snf.stanford.edu (Jim McVittie)
Date: Thu, 13 Jan 2005 10:17:36 -0800
Subject: Nb target in SCT
References: <012201c4f912$9abbe830$0100000a@Laptopsally>
	 <Pine.LNX.4.44.0501130901550.22415-100000@cis.Stanford.EDU> <6.0.1.1.2.20050113095108.01b62ef0@edmyers.pobox.stanford.edu>
Message-ID: <41E6BB3F.D983C0A8@snf.stanford.edu>

Ed,

Here is some info on Nb.

Its safety ratings are: Health - 0, Flammability - 4, Reactivity - 0
  Cr, Ti and Zr also have a flammability rating of 4.

The Sloan technical notes say that it can be sputtered with either dc or rf.

Nb has a very low vapor pressure. On the RCA 1B curve it is the 3rd below W.

My sources do not list any deep levels for Nb, so it is not a known bad actor
in Si.

    Jim



Ed Myers wrote:

> Gloria,
>
> Do you have written confirmation from the SpecMat committee concerning Nb
> deposition in the SCT?  I don't remember seeing a Nb proposal since I've
> been involved.  I can look in to the purchase cost of the target, but no Nb
> deposition will be allowed unless you have written approved by the SpecMat
> committee.
>
> Ed
>
> At 09:13 AM 1/13/2005, Jim McVittie wrote:
> >Gloria,
> >
> >I have not ordered a target. At this point, I think it would be best to
> >have Ed order the target. In the past, the lab paid for targets only if
> >several groups requested it. The cost of a 2" x 0.125" target from Lesker
> >is $585. While the tool should be able to take 0,125" thick targets, it is
> >actually set up to take 0.250" targets. I expect the 0.250" target from
> >Lester will be about $1000. I purchased all the previous targets from
> >Plasma Materials which had better prices and purity than Lesker.
> >
> >We can check with the Nishi and Saraswat groups to sdee if they need Nb.
> >
> >         Jim
> >
> >On Wed, 12 Jan 2005, Gloria Wong wrote:
> >
> > > Hi Jim,
> > >
> > > What is the status of the Nb target in the SCT?  I recall that you and
> > Mike okayed it for use in the SCT, but I can't remember if you were
> > planning on ordering it, or if I should be looking into that.
> > >
> > > Please let me know because after training on Friday, I would like to
> > starting depositing W and Nb.
> > >
> > > Thanks,
> > > Gloria
> > >
> >
> >--
> >--------------------------------------------------------------
> >Jim McVittie, Ph.D.                     Senior Research Scientist
> >Allen Center for Integrated Systems     Electrical Engineering
> >Stanford University                     jmcvittie at stanford.edu
> >Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
> >Stanford, CA 94305-4075                 Tel: (650) 725-3640
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From mdeal at stanford.edu  Thu Jan 13 10:18:29 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Thu, 13 Jan 2005 10:18:29 -0800
Subject: Request to process LaAlO3 inside SNF
In-Reply-To: <41E6AD90.C6785DA8@snf.stanford.edu>
References: <01EF044AAEE12F4BAAD955CB7506494302D40D8E@scsmsx401.amr.corp.intel.com>
 <41E41F00.6AE63B38@snf.stanford.edu>
 <6.1.1.1.2.20050111104818.01fbed28@mdeal.pobox.stanford.edu>
 <41E6AD90.C6785DA8@snf.stanford.edu>
Message-ID: <6.1.1.1.2.20050113101819.01f4b448@mdeal.pobox.stanford.edu>

I agree.   -mike

At 09:19 AM 1/13/2005, Jim McVittie wrote:
>Mike,
>
>Chi On has given me the details on where his LaAlO3 is coming from, 
>however I am suppose to keep the source confidential. It is from a clean 
>and should give us no problems. I say let him use the FGA tube.
>
>     Jim
>
>Michael Deal wrote:
>>
>>It should fine as long as it came from a clean source.  Do we know where 
>>Chi-On got it or deposited it?    -mike
>>
>>At 10:46 AM 1/11/2005, Jim McVittie wrote:
>>>Specmat,
>>>
>>>Here is some info I found on La2O3.
>>>
>>>La2O3 is of interest as a new hi k material so it is thought to be a Si 
>>>device friendly material. Both La and its oxides have low vapor 
>>>pressures so there should no vapor transport during a FGA step.
>>>
>>>La is  of the most reactive of the rare-earth metals. It oxidises 
>>>rapidly when exposed to air. Cold water attacks lanthanum slowly, and 
>>>hot water attacks it much more rapidly. The metal reacts directly with 
>>>elemental carbon, nitrogen, boron, selenium, silicon, phosphorus, 
>>>sulphur, and with halogens.
>>>
>>>La2O3 has a melting point of 2307C and boiling point of 4200C. This 
>>>means it is very stable will not easily decompose. Under stability in ts 
>>>MSDS, I found the following:
>>>    Stable: Stable.
>>>    Conditions to Avoid: Protect from moisture.
>>>    Materials to Avoid: Strong acids, Strong oxidizing agents Carbon 
>>> dioxide.
>>>
>>>  Its safety ratings are: Health -- 2, Flammability -- 0, Reactivity -- 1,
>>>
>>>
>>>"Chui, Chi On" wrote:
>>>>Dear All,
>>>>I?m the Intel Researcher-in-Residence in SNF. I have some film stacks 
>>>>of ~1000 ? Al/~50 ? LaAlO3/Si and would like to perform some FGA in 
>>>>tylanfga (in addition to standard litho). Could I anneal them in the 
>>>>backside of the furnace? Thanks in advance! /Chi On
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From mdeal at stanford.edu  Thu Jan 13 10:20:32 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Thu, 13 Jan 2005 10:20:32 -0800
Subject: Nb target in SCT
In-Reply-To: <41E6BB3F.D983C0A8@snf.stanford.edu>
References: <012201c4f912$9abbe830$0100000a@Laptopsally>
 <Pine.LNX.4.44.0501130901550.22415-100000@cis.Stanford.EDU>
 <6.0.1.1.2.20050113095108.01b62ef0@edmyers.pobox.stanford.edu>
 <41E6BB3F.D983C0A8@snf.stanford.edu>
Message-ID: <6.1.1.1.2.20050113102017.01f67098@mdeal.pobox.stanford.edu>

Approve it.    -mike

At 10:17 AM 1/13/2005, you wrote:
>Ed,
>
>Here is some info on Nb.
>
>Its safety ratings are: Health - 0, Flammability - 4, Reactivity - 0
>   Cr, Ti and Zr also have a flammability rating of 4.
>
>The Sloan technical notes say that it can be sputtered with either dc or rf.
>
>Nb has a very low vapor pressure. On the RCA 1B curve it is the 3rd below W.
>
>My sources do not list any deep levels for Nb, so it is not a known bad actor
>in Si.
>
>     Jim
>
>
>
>Ed Myers wrote:
>
> > Gloria,
> >
> > Do you have written confirmation from the SpecMat committee concerning Nb
> > deposition in the SCT?  I don't remember seeing a Nb proposal since I've
> > been involved.  I can look in to the purchase cost of the target, but no Nb
> > deposition will be allowed unless you have written approved by the SpecMat
> > committee.
> >
> > Ed
> >
> > At 09:13 AM 1/13/2005, Jim McVittie wrote:
> > >Gloria,
> > >
> > >I have not ordered a target. At this point, I think it would be best to
> > >have Ed order the target. In the past, the lab paid for targets only if
> > >several groups requested it. The cost of a 2" x 0.125" target from Lesker
> > >is $585. While the tool should be able to take 0,125" thick targets, it is
> > >actually set up to take 0.250" targets. I expect the 0.250" target from
> > >Lester will be about $1000. I purchased all the previous targets from
> > >Plasma Materials which had better prices and purity than Lesker.
> > >
> > >We can check with the Nishi and Saraswat groups to sdee if they need Nb.
> > >
> > >         Jim
> > >
> > >On Wed, 12 Jan 2005, Gloria Wong wrote:
> > >
> > > > Hi Jim,
> > > >
> > > > What is the status of the Nb target in the SCT?  I recall that you and
> > > Mike okayed it for use in the SCT, but I can't remember if you were
> > > planning on ordering it, or if I should be looking into that.
> > > >
> > > > Please let me know because after training on Friday, I would like to
> > > starting depositing W and Nb.
> > > >
> > > > Thanks,
> > > > Gloria
> > > >
> > >
> > >--
> > >--------------------------------------------------------------
> > >Jim McVittie, Ph.D.                     Senior Research Scientist
> > >Allen Center for Integrated Systems     Electrical Engineering
> > >Stanford University                     jmcvittie at stanford.edu
> > >Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
> > >Stanford, CA 94305-4075                 Tel: (650) 725-3640



From mcvittie at cis.Stanford.EDU  Fri Jan 14 13:51:10 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Fri, 14 Jan 2005 13:51:10 -0800 (PST)
Subject: Co and Mn
In-Reply-To: <6.1.2.0.2.20050112160322.05219b00@hdai1.pobox.stanford.edu>
Message-ID: <Pine.LNX.4.44.0501141307191.22415-100000@cis.Stanford.EDU>

Hongjie,

Ed Myers is now overseeing the sputter systems in the SNF lab. I am going
let him make the decision on this request. The new SCT sputter system is 
an alternative to Metalica for Co. We do have a thin (1/16") Co target for 
the SCT and Co has been approved for this tool. Since we have already done 
Ni in the SCT, Co should work fine.

	Jim 

On Wed, 12 Jan 2005, Hongjie Dai wrote:

> 
> Jim, we will be only depositing no more than 5 nm of Co and will use thin 
> foils.  Would this be allowed?
> 
> Hongjie
> 
> At 02:56 PM 1/12/2005, Jim McVittie wrote:
> >Hongjie,
> >
> >See note below from Eric about using Metalica for sputtering Co. It does
> >not sound like we would want to try it again.
> >
> >         Jim
> >
> >On Wed, 12 Jan 2005, Eric Perozziello wrote:
> >
> > >
> > > Hi Jim,
> > >
> > > Way back when metalica was an orphan (~1995).
> > >
> > > I don't recommend it.  We had to thin it down to
> > > almost a foil, and only got a few thin deps from it.
> > >
> > > It arcs and spits, and can eventually overheat the magnets.
> > > US, Inc says these guns were not designed for stong
> > > ferromagnetic materials.
> > >
> > > -Eric
> > >
> > >
> > >
> > > On Wed, 12 Jan 2005, Jim McVittie wrote:
> > >
> > > > Eric,
> > > >
> > > > I believe you told me that you had run Co in the Metalica in the past. Is
> > > > this correct? Also what was the target thickness.
> > > >
> > > >     Thanks,  Jim
> > > >
> > > > On Wed, 12 Jan 2005, Jim McVittie wrote:
> > > >
> > > > > Hongjie,
> > > > >
> > > > > Mn and Co have vapor pressures below In so there is not a vapor 
> > pressure
> > > > > problem. There are both metals which is consistent with the general 
> > use of
> > > > > the tool. Co has a health risk level of 3 which is the same as Cr 
> > and Ni,
> > > > > while Mn has a health risk level of 0. I believe Co has been used in
> > > > > Metalica in the past. The main issue with Co is that is magnetic 
> > material
> > > > > which means it will tend to shut the magnetic fields from the magnitron
> > > > > magnets. This means the target thickness needs to be kept thin. Let me
> > > > > find out what target thickness was used in the past. Regarding Mn, I do
> > > > > not see any problems.
> > > > >
> > > > > I am copying Specmat to see if anyone on the materials committee 
> > has any
> > > > > comments.
> > > > >
> > > > >   Jim
> > > > >
> > > > > On Tue, 11 Jan 2005, Hongjie Dai wrote:
> > > > >
> > > > > >
> > > > > > Jim,
> > > > > >
> > > > > > Is it ok to deposit Mn and Co in Metallica?  If so, we will order 
> > some targets
> > > > > >
> > > > > > Thanks, Hongjie
> > > > > >
> > > > > >
> > > > > > ====================================
> > > > > > Professor Hongjie Dai
> > > > > > Stanford University
> > > > > > Department of Chemistry
> > > > > > Stanford, CA 94305
> > > > > >
> > > > > > Phone: 650-723-4518 (office); 650-725-9156 (lab)
> > > > > > Fax:     650-725-0259
> > > > > > Email:  hdai or hdai1 at stanford.edu
> > > > > > Office: Keck Science Building, Room 125
> > > > > > ====================================
> > > > > >
> > > > > >
> > > > >
> > > > >
> > > >
> > > > --
> > > > --------------------------------------------------------------
> > > > Jim McVittie, Ph.D.                         Senior Research Scientist
> > > > Allen Center for Integrated Systems     Electrical Engineering
> > > > Stanford University                 jmcvittie at stanford.edu
> > > > Rm. 336, 330 Serra Mall                     Fax: (650) 723-4659
> > > > Stanford, CA 94305-4075                     Tel: (650) 725-3640
> > > >
> > > >
> > > >
> > >
> > >
> >
> >--
> >--------------------------------------------------------------
> >Jim McVittie, Ph.D.                     Senior Research Scientist
> >Allen Center for Integrated Systems     Electrical Engineering
> >Stanford University                     jmcvittie at stanford.edu
> >Rm. 336, 330 Serra Mall                 Fax: (650) 723-4659
> >Stanford, CA 94305-4075                 Tel: (650) 725-3640
> 
> ====================================
> Professor Hongjie Dai
> Stanford University
> Department of Chemistry
> Stanford, CA 94305
> 
> Phone: 650-723-4518 (office); 650-725-9156 (lab)
> Fax:     650-725-0259
> Email:  hdai or hdai1 at stanford.edu
> Office: Keck Science Building, Room 125
> ==================================== 
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640





From gloria.wong at stanford.edu  Fri Jan 14 17:27:11 2005
From: gloria.wong at stanford.edu (Gloria Wong)
Date: Fri, 14 Jan 2005 17:27:11 -0800
Subject: Process Flow
Message-ID: <003101c4faa1$56dc8df0$0100000a@Laptopsally>

Hi,

Enclosed is a proposed process flow, particularly for use of Nb in the SCT.

Please let me know if you have any concerns.

Thanks,
Gloria
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From alan.m.myers at intel.com  Tue Jan 18 08:36:36 2005
From: alan.m.myers at intel.com (Myers, Alan M)
Date: Tue, 18 Jan 2005 08:36:36 -0800
Subject: methane sulfonic acid
Message-ID: <8A3152FDE2948B42AECCF93BFFA130EC056E972C@scsmsx401.amr.corp.intel.com>

I would like to use and temporarily store the following chemical in the
lab  Methane Sulfonic Acid.  The details of this chemical can be found
at

 

http://www.sigmaaldrich.com/cgi-bin/hsrun/Suite7/Suite/Suite.hjx;start=S
uite.HsViewHierarchy.run?Detail=Product&ProductNumber=ALDRICH-471356&Ver
sionSequence=1

 

 

Please let me know the next step to get the chemical in the lab.

 

Thanks,

            Alan

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From mtang at snf.stanford.edu  Tue Jan 18 09:07:19 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Tue, 18 Jan 2005 09:07:19 -0800
Subject: methane sulfonic acid
In-Reply-To: <8A3152FDE2948B42AECCF93BFFA130EC056E972C@scsmsx401.amr.corp.intel.com>
References: <8A3152FDE2948B42AECCF93BFFA130EC056E972C@scsmsx401.amr.corp.intel.com>
Message-ID: <41ED4247.40404@snf.stanford.edu>

Hi Alan --

You may be in luck.  There's a SpecMat meeting today at 1, so if we have 
all your information, we can review it then.  If you could provide the 
following information:

http://snf.stanford.edu/Materials/NewMatProc.html

it would be much appreciated.  Basically, where are you going to use it 
and how, what's the disposal method, etc.  I have to admit that I'm a 
little concerned about storage because the MSDS indicates it should not 
be stored with strong oxidizers, so I think that rules out the chemicals 
passthrough area...  If you have further information, it would be 
appreciated...

Mary

Myers, Alan M wrote:

> I would like to use and temporarily store the following chemical in 
> the lab  Methane Sulfonic Acid.  The details of this chemical can be 
> found at
>
>  
>
> http://www.sigmaaldrich.com/cgi-bin/hsrun/Suite7/Suite/Suite.hjx;start=Suite.HsViewHierarchy.run?Detail=Product&ProductNumber=ALDRICH-471356&VersionSequence=1 
> <http://www.sigmaaldrich.com/cgi-bin/hsrun/Suite7/Suite/Suite.hjx;start=Suite.HsViewHierarchy.run?Detail=Product&ProductNumber=ALDRICH-471356&VersionSequence=1>
>
>  
>
>  
>
> Please let me know the next step to get the chemical in the lab.
>
>  
>
> Thanks,
>
>             Alan
>


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From rissman at stanford.edu  Tue Jan 18 13:37:27 2005
From: rissman at stanford.edu (Paul Rissman)
Date: Tue, 18 Jan 2005 13:37:27 -0800
Subject: specmat meeting 1/18/05
Message-ID: <5.1.1.5.2.20050118132847.0181e788@rissman.pobox.stanford.edu>

Attending - Mike, Ed, Mahnaz, Mary, Paul
Absent - Jim, John

1. Gloria Wong - niobium (class semiclean b) - deposition has been 
approved, RTP has been approved, etch requires approval of Jim.
2. Peter Griffin - GaAs RTP - RTP to be limited to hooded/exhausted RTP 
system.  That system to be limited to maximum temperature of 800 C.  No 
GaAs in system which is not hooded/exhausted.  (Dick's group is presently 
providing forming gas to the system.)
3. HBr/gold etchant/methane sulfonic acid - is there an issue with storage 
with oxidizing acids? - Mary to check with Mary Dougherty.
4. Hongjie Dai - cobalt/manganese sputtering - issue open

notes: John - Ed needs to be added to specmat list.



From gary.yama at rtc.bosch.com  Tue Jan 18 17:37:05 2005
From: gary.yama at rtc.bosch.com (Gary Yama (RTC))
Date: Tue, 18 Jan 2005 17:37:05 -0800
Subject: Thin film sputtered aluminum nitride wafer processing
Message-ID: <41EDB9C1.2060607@rtc.bosch.com>

I'm interested in processing sputtered piezoelectric aluminum nitride.  
Film would be deposited at a vendor, photolith, dry etching, wet 
cleaning, and other processing in CMOS clean equipment.  Assuming the 
aluminum nitride sputtering tool is CMOS clean, are there any other 
restrictions on which CMOS clean tool I can use at Stanford?

Are these compatible:

wbdiff
wbnonmetal
tylan oxidation
thermco
svgcoat, svgdev
ultratech
evalign
drytek2
p5000
lampoly
stsetch
epi
gasonics

Thanks - Gary


From mcvittie at cis.Stanford.EDU  Wed Jan 19 13:43:31 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Wed, 19 Jan 2005 13:43:31 -0800 (PST)
Subject: Addition of Pd to Semiclean B material List
Message-ID: <Pine.LNX.4.44.0501191335450.25141-100000@cis.Stanford.EDU>

I would to add palladium, Pd, to the Semiclean B material List.

Pd is very similar to Pt. Its safety ratings are all 0s. Its vapor
pressure curve is next to gold. It has a deep level of 0.34 eV which is
the same as Mo. It is relatively expense material with the Lesker price 
for a 2" target being $1400. 

	Thanks,  Jim



From mdeal at stanford.edu  Wed Jan 19 13:51:01 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Wed, 19 Jan 2005 13:51:01 -0800
Subject: Addition of Pd to Semiclean B material List
In-Reply-To: <Pine.LNX.4.44.0501191335450.25141-100000@cis.Stanford.EDU>
References: <Pine.LNX.4.44.0501191335450.25141-100000@cis.Stanford.EDU>
Message-ID: <6.1.1.1.2.20050119135050.01f858f8@mdeal.pobox.stanford.edu>


Jim,
     Who is going to pay for this?    -mike

At 01:43 PM 1/19/2005, Jim McVittie wrote:
>I would to add palladium, Pd, to the Semiclean B material List.
>
>Pd is very similar to Pt. Its safety ratings are all 0s. Its vapor
>pressure curve is next to gold. It has a deep level of 0.34 eV which is
>the same as Mo. It is relatively expense material with the Lesker price
>for a 2" target being $1400.
>
>         Thanks,  Jim



From mtang at snf.stanford.edu  Wed Jan 19 14:14:53 2005
From: mtang at snf.stanford.edu (Mary Tang)
Date: Wed, 19 Jan 2005 14:14:53 -0800
Subject: [Fwd: thin film vendors]
Message-ID: <41EEDBDD.9000804@snf.stanford.edu>

Hi all --

I'm not sure this is a SpecMat request yet, but just wanted to get your 
thinking on this...  Can we consider Process Specialties as being 
"clean", like the way we do IBM and Intel?

M

-------- Original Message --------
Subject: 	thin film vendors
Date: 	Wed, 19 Jan 2005 13:58:20 -0800 (PST)
From: 	Richard Yeh <richyeh at sbcglobal.net>
To: 	Mary Tang <mtang at snf.stanford.edu>



Hi Mary,

I'm thinking of having some thin-films deposited
(thermal oxide and lpcvd poly) on 4" wafers and
then doing patterning on those wafers at SNF.
Is there a list of approved vendors whose wafers
are allowed into SNF?  Right now, I'm considering
using Process Specialties, Inc.

Thanks,
Richard Yeh
yeh at snf

=====


-- 
Mary X. Tang, Ph.D.
Stanford Nanofabrication Facility
CIS Room 136, Mail Code 4070
Stanford, CA  94305
(650)723-9980
mtang at stanford.edu
http://snf.stanford.edu



From mcvittie at cis.Stanford.EDU  Wed Jan 19 15:20:18 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Wed, 19 Jan 2005 15:20:18 -0800 (PST)
Subject: Addition of Pd to Semiclean B material List
In-Reply-To: <6.1.1.1.2.20050119135050.01f858f8@mdeal.pobox.stanford.edu>
Message-ID: <Pine.LNX.4.44.0501191516580.25141-100000@cis.Stanford.EDU>

Mike,

I was not proposing that we buy a Pd target. I am working with a user, who 
be using Pd deposited outside.  I just wanted to get Pd on the B list as a 
first step to its use. 

	Jim  

On Wed, 19 Jan 2005, Michael Deal wrote:

> 
> Jim,
>      Who is going to pay for this?    -mike
> 
> At 01:43 PM 1/19/2005, Jim McVittie wrote:
> >I would to add palladium, Pd, to the Semiclean B material List.
> >
> >Pd is very similar to Pt. Its safety ratings are all 0s. Its vapor
> >pressure curve is next to gold. It has a deep level of 0.34 eV which is
> >the same as Mo. It is relatively expense material with the Lesker price
> >for a 2" target being $1400.
> >
> >         Thanks,  Jim
> 
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640




From latta at snf.stanford.edu  Thu Jan 20 11:33:01 2005
From: latta at snf.stanford.edu (Nancy Latta)
Date: Thu, 20 Jan 2005 11:33:01 -0800
Subject: [Fwd: Semi-clean glassware and beakers]
Message-ID: <41F0076D.3080007@snf.stanford.edu>

Here is a message about cleaning glassware for the new A and B semiclean.

I have a couple of questions relating to this email;

1) Pyrex beaker?  Should this be quartz?  And if so, do we provide it?

2) The HF dips, can they be done at wbsilicide? Do we have dedicated 
cassettes for this work, or are the silicide cassettes ok to use?  Signage?

 I am pretty clear on how to clean the poly/plastic baths and cassettes.

-Nancy
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Subject: Semi-clean glassware and beakers
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From rissman at stanford.edu  Fri Jan 21 08:24:19 2005
From: rissman at stanford.edu (Paul Rissman)
Date: Fri, 21 Jan 2005 08:24:19 -0800
Subject: Fwd: 2/1 meeting room
Message-ID: <5.1.1.5.2.20050121082408.01827a60@rissman.pobox.stanford.edu>


>X-Sieve: CMU Sieve 2.2
>Date: Fri, 21 Jan 2005 08:23:14 -0800 (PST)
>From: Ann Guerra <guerra at par.stanford.edu>
>To: <rissman at stanford.edu>, Jane Edwards <Jane.Edwards at stanford.edu>
>Subject: 2/1 meeting room
>
>Paul:
>
>Your Tues Feb 1 meeting of Spec Mat 1-2pm has been moved to CISX-338.
>Thanks so much for making the change!
>
>*Ann*




From shott at snf.stanford.edu  Fri Jan 21 15:10:14 2005
From: shott at snf.stanford.edu (John Shott)
Date: Fri, 21 Jan 2005 15:10:14 -0800
Subject: Implants into GaAs wafers ....
Message-ID: <41F18BD6.4090300@snf.stanford.edu>

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From mdeal at stanford.edu  Fri Jan 21 15:51:58 2005
From: mdeal at stanford.edu (Michael Deal)
Date: Fri, 21 Jan 2005 15:51:58 -0800
Subject: Implants into GaAs wafers ....
In-Reply-To: <41F18BD6.4090300@snf.stanford.edu>
References: <41F18BD6.4090300@snf.stanford.edu>
Message-ID: <6.1.1.1.2.20050121155038.01ed56a0@mdeal.pobox.stanford.edu>


Sounds okay to me (we used to do implants to GaAs wafers here before.  No 
problems.)  -mike

At 03:10 PM 1/21/2005, you wrote:
>Specmat committee:
>
>Mike Weimer would like to do a moderate dose H+ implant into a GaAs 
>partial wafer ... my inclination is that this should be just fine as the 
>potential heating due to the implant beam should be virtually non-existant.
>
>Does anyone have any other concerns related to this?
>
>Thanks,
>
>John



From shott at snf.stanford.edu  Fri Jan 21 15:56:29 2005
From: shott at snf.stanford.edu (John Shott)
Date: Fri, 21 Jan 2005 15:56:29 -0800
Subject: Implants into GaAs wafers ....
In-Reply-To: <6.1.1.1.2.20050121155038.01ed56a0@mdeal.pobox.stanford.edu>
References: <41F18BD6.4090300@snf.stanford.edu> <6.1.1.1.2.20050121155038.01ed56a0@mdeal.pobox.stanford.edu>
Message-ID: <41F196AD.7070404@snf.stanford.edu>

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From mcvittie at cis.Stanford.EDU  Mon Jan 24 13:20:45 2005
From: mcvittie at cis.Stanford.EDU (Jim McVittie)
Date: Mon, 24 Jan 2005 13:20:45 -0800 (PST)
Subject: Nb use in Drytek 2
In-Reply-To: <00f901c4fdb7$9a829c70$0100000a@Laptopsally>
Message-ID: <Pine.LNX.4.44.0501241259130.16866-100000@cis.Stanford.EDU>

Gloria.

>From my experience with etching other materials, I feel etching Nb in
Drytek2 will most likely contaminate the tool with Nb. This means
subsequent wafers processed in the tool will likely pick up some Nb. I
suspect this will not be a big problem for several reasons. First, Nb has
been etched in Drytek1 many times over the yeras and no Nb related
problems have ever been reported. Second, Nb is not a known bad actor in
Si. Finally, Nb from the etcher is likely to be removed during the
diff-clean.  It would be best if we could verify this last point with an
TXRF test.

	Jim 



On Tue, 18 Jan 2005, Gloria Wong wrote:

> Hi,
> 
> I would like to obtain approval for use of Nb in Drytek 2, which currently allows standard metals.  It is the last step in my process flow that has to be approved.
> 
> Much thanks,
> Gloria
> 

-- 
--------------------------------------------------------------
Jim McVittie, Ph.D.    			Senior Research Scientist 
Allen Center for Integrated Systems     Electrical Engineering
Stanford University             	jmcvittie at stanford.edu
Rm. 336, 330 Serra Mall			Fax: (650) 723-4659
Stanford, CA 94305-4075			Tel: (650) 725-3640




From Yiching_Liang at MolDev.com  Wed Jan 26 13:44:00 2005
From: Yiching_Liang at MolDev.com (Yiching Liang)
Date: Wed, 26 Jan 2005 13:44:00 -0800
Subject: special materials request
Message-ID: <s1f79eae.084@mdgw3.moldev.com>

Hi-

I have request and obtained approval for bringing in a polyimide
(PI-5878G) to SNF last year. At the time of the request, I was planning
to dry etch the polyimide in drytek2, and had been approved to use it in
drytek2. I would now like to try wet etching the polyimide film instead.
So I need to get approval to use this material in additional SNF
equipment.

According to the manufacturer's spec, this polyimide material can be
wet etched using any TMAH-based photoresist developer, including the
standard photoresist developer used in SNF. The etching is actually
usually done simultaneously with the development of the photoresist used
for patterning it. 

My question is, can this etching/developing step be done in svgdev? If
so, I'd like to get approval to use this polyimide in svgdev. If this
material is not allowed in svgdev, I'd like to get approval to use it at
the wbmisres bench.

Please let me know which way is acceptable. Thanks!


Yiching
Coral name: yiching 

--
Yiching Liang
R&D Engineer, IonWorks
Molecular Devices
3280 Whipple Road
Union City,  CA  94587
Direct: 510-675-6242
Fax: 510-675-6439
yiching_liang at moldev.com


From wangz at stanford.edu  Thu Jan 27 09:41:22 2005
From: wangz at stanford.edu (Zheng Wang)
Date: Thu, 27 Jan 2005 09:41:22 -0800
Subject: Please schedule a test run of ZnCdS sputtering
Message-ID: <000c01c50497$6af4d450$b36b40ab@zwang01>

Dear All,

According to our discussions on ZnCdS RF sputtering, I need to run a test  together with you to check the contamination.

I wish we could schedule it next week. Please let me know how I should proceed. 

Thank you. 
-zheng
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From edmyers at stanford.edu  Fri Jan 28 16:29:24 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Fri, 28 Jan 2005 16:29:24 -0800
Subject: Fwd: Tystar1 replacemnet
Message-ID: <6.0.1.1.2.20050128162917.01c49220@edmyers.pobox.stanford.edu>


>X-Sieve: CMU Sieve 2.2
>Delivered-To: emyers at snf.stanford.edu
>From: "Abhijit Pethe" <pethe at stanford.edu>
>To: "'Mary Tang'" <mtang at snf.stanford.edu>
>Cc: <emyers at snf.stanford.edu>, "'Jim McVittie'" <mcvittie at cis.Stanford.EDU>,
>         "'Michael Deal'" <mdeal at stanford.edu>
>Subject: Tystar1 replacemnet
>Date: Thu, 27 Jan 2005 17:47:06 -0800
>X-Mailer: Microsoft Outlook, Build 10.0.4510
>Importance: Normal
>
>Hi,
>
>I have been using the tystar1 for doing my low-temperature doped poly 
>processes on my clean Ge (silicide and semiclean B process) wafers. I 
>nominally do an n+poly deposition of about 3000A at 580C followed by 2x 
>deposition of undoped poly at 620C (~1um). Will there be an alternative 
>tube where I could do this processing?
>
>Please let me know,
>Abhijit
>
>Abhijit Jayant Pethe
>PhD Candidate
>Department of Electrical Engineering
>Stanford University, CA
>Phone :(O)(650)-725-3608; (C) (650)-387-6435
>e-mail: <mailto:pethe at stanford.edu>pethe at stanford.edu
>




From edmyers at stanford.edu  Mon Jan 31 11:14:03 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 31 Jan 2005 11:14:03 -0800
Subject: SpecMat Logsheet
Message-ID: <6.0.1.1.2.20050131111142.01c565b8@edmyers.pobox.stanford.edu>

All,

I've put the outstanding SpecMat request I could find in to an excel log 
sheet.  Please review for completeness so we can address the open items at 
the next meeting.

Regards,
Ed
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From acremann at slac.stanford.edu  Mon Jan 31 14:38:47 2005
From: acremann at slac.stanford.edu (Yves Acremann)
Date: Mon, 31 Jan 2005 14:38:47 -0800
Subject: I would like to use silicone rubber in the lab
Message-ID: <41FEB377.3000101@slac.stanford.edu>

One of the tricky processing steps is KOH backside etching of wafers 
with metal structures on the frontside. The main problem is
the protection of the front side during the etch process. We currently 
use black wax for that purpose. We had some problems with
this in the past where the black wax layer failed during very long 
etches (up to 40 hours for 1.2mm thick Si wafers).

We would like to try to put two wafers front to front and use silicone 
rubber to seal the edge. In addition, we plan to have black wax on the
front side.
We did some tests with silicone rubber and its ability to withstand KOH 
in our lab at SLAC and this method looks promising.
We used the following product for our tests (copied from the home depot 
catalog :-)) ):

"GE 2.8 oz. Clear Silicone Household Glue
Model GE280 3TG

100% silicone. Permanently flexible. Adheres to tile, porcelain, glass, 
fiberglass, marble, wood, steel, aluminum, brick, mortar, concrete, and 
most plastics. Lifetime satisfaction guarantee. Won't dry out, crack, 
chip or peel. Easy to use squeeze tube. Can be used as glue, sealant, 
caulk or gasketing, and for many patch and repair applications around 
the house and shop."

For our real wafers, we would like to test this method in the cleanroom. 
As similar materials are likely used during construction of the wet 
benches, I hope it will be possible to get approval for
this material. Of corse we only deal with gold contaminated wafers and 
this is our last processing step (followed by solvent cleaning and 
sawing the wafer). We also will NOT heat the
wafer to a temperature higher than 75C (in KOH) and if necessary, we can 
do the KOH etch in our lab at SLAC.

I did not find the MSDS that corresponds directly to this product, but 
there is a link containing more information about it:
http://householdproducts.nlm.nih.gov/cgi-bin/household/brands?tbl=brands&id=7011007

Sincerely
Yves Acremann




From rhett.t.brewer at intel.com  Mon Jan 31 16:46:47 2005
From: rhett.t.brewer at intel.com (Brewer, Rhett T)
Date: Mon, 31 Jan 2005 16:46:47 -0800
Subject: Request for Process approval
Message-ID: <7F740D512C7C1046AB53446D37200173032718CF@scsmsx402.amr.corp.intel.com>

I would like to request formal approval to process a non-standard film
in Semi-clean equipment at SNF or determine experiments I need to run to
gain approval or find alternative processing solutions.  I would like to
begin processing in the next two weeks if at all possible.

 

The film in question is composed of silicon, oxygen, and palladium (Pd)
on a standard 4 inch silicon wafer.  In this film, there is no more than
4 to 5 monolayers worth of Pd and it may exist as silicide, metal, or
oxide.  This wafer will also have an Al2O3 film on it.

 

I would like to process this film stack in the following tools at the
specified temperatures when applicable:

 

P5000 - Poly etch chamber, Al etch chamber

Tylan tube furnace for annealing (whichever is appropriate - I assume
tylanfga) at 400C and 600 - 800 C (this temp not yet determined, but
will be in that range).

Tylanpsg for LTO deposition.  400C.

AMT 8110

Drytek 100

Gryphon or STC (Do I have that correct?  The new machine run by Ed
Myers) for metal deposition.

AG4108 Rapid Thermal Annealer
<http://snf.stanford.edu/Equipment/ag4108/ag4108.html>  (Semi-Clean
Mode) 600-800C

 

Additionally, I would like to request the ability to clean the wafers in
an appropriate wet bench (wbsilicide?)  The wafers will have to be
cleaned at several steps to strip resist and prepare them for entry into
these "semi-clean" tools.

 

Finally, I would like to coat this wafer with poly.  The tystar is the
perfect tool (I believe it is both semi-clean and can deposit doped
poly), but I understand it is going away.  I would like the ability to
put down either n-doped or undoped poly at up to 600C (I expect it will
be 580C).  I will say that during this process, the silicon, oxygen,
palladium film will be completely covered with Al2O3 (>10 nm).  The
Al2O3 will either be grown at SNF (new ALD chamber) or by an outside
vendor.  In either case, before a wafer is introduced into the poly
chamber from either the ALD or an outside vendor, I will check a test
wafer with TXRF for contaminants.  

 

Eventually, the Al2O3 may be replaced by another high-k (HfO2 maybe).  I
just wanted to make you aware of that, but it is not urgent.

 

I would appreciate a timely response.  I would be happy to meet to
answer questions to clarify process and give any information that is
appropriate to ensure the compatibility of my process with the needs of
the lab.

 

Thank you.

 

Rhett Brewer

Intel Corporation

work: 408-765-8254

cell: 408-655-3448

rhett.t.brewer at intel.com <mailto:rhett.t.brewer at intel.com> 

 

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From edmyers at stanford.edu  Mon Jan 31 17:16:34 2005
From: edmyers at stanford.edu (Ed Myers)
Date: Mon, 31 Jan 2005 17:16:34 -0800
Subject: 1/31/05 Latest SpecMat Logsheet
Message-ID: <6.0.1.1.2.20050131171532.01c50530@edmyers.pobox.stanford.edu>

We are up to over 20 items.

Ed
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From ratiug at stanford.edu  Mon Jan 31 21:54:57 2005
From: ratiug at stanford.edu (Ching-Huang Lu)
Date: Mon, 31 Jan 2005 21:54:57 -0800
Subject: Process
Message-ID: <00e801c50822$8fc21a20$35a20c80@ratiug>

Hi, 

Here is the process flow for use of the metal from SCT. Basically, all the process is clean before SCT metal deposition and semi-clean after SCT metal deposition.

Please let me know if there is anything needed to modified.

thanks.

Ching-Huang

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